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Research paper thumbnail of Observation of Large, Anomalous Pyroelectric Response in AlN Thin Films

MRS Proceedings, 2011

ABSTRACTWe have observed a pyroelectric effect (PE) in reactively sputtered aluminum nitride (AlN... more ABSTRACTWe have observed a pyroelectric effect (PE) in reactively sputtered aluminum nitride (AlN) thin films that is typically a factor of twenty greater than commercial pyroelectric materials such as triglycine sulfate (TGS). This is most likely due to an extrinsic effect since the known crystalline structures of AlN are too symmetric to allow such high values for the PE response. Preliminary annealing studies support the assumption that residual strains remaining from the AlN thin film deposition are the most likely source of the anomalously high PE response. The results of these studies are presented along with some measurements that indicate a still higher PE response might be obtainable.

Research paper thumbnail of Observation of Large, Anomalous Pyroelectric Response in AlN Thin Films

MRS Proceedings, 2011

ABSTRACTWe have observed a pyroelectric effect (PE) in reactively sputtered aluminum nitride (AlN... more ABSTRACTWe have observed a pyroelectric effect (PE) in reactively sputtered aluminum nitride (AlN) thin films that is typically a factor of twenty greater than commercial pyroelectric materials such as triglycine sulfate (TGS). This is most likely due to an extrinsic effect since the known crystalline structures of AlN are too symmetric to allow such high values for the PE response. Preliminary annealing studies support the assumption that residual strains remaining from the AlN thin film deposition are the most likely source of the anomalously high PE response. The results of these studies are presented along with some measurements that indicate a still higher PE response might be obtainable.

Research paper thumbnail of The Oxidation of Germanium Surfaces at Pressures Much Greater Than One Atmosphere

Journal of The Electrochemical Society, 1982

Research paper thumbnail of The eye wink control interface: using the computer to provide the severely disabled with increased flexibility and comfort

IEEE Symposium on Computer-Based Medical Systems, 1990

The eye wink control interface was designed to enable severely handicapped individuals to control... more The eye wink control interface was designed to enable severely handicapped individuals to control mechanical devices by using eye winks of varying duration without having their head motion or speech restricted. The advantages of this computer-based system are (1) an unobtrusive and inexpensive control device, (2) increased comfort for the user, and (3) an increase in the number and complexity

Research paper thumbnail of Semiconductor Selection and Optimization for use in a Laser Induced Pulsed Pico-Second Electromagnetic Source

The use of optically induced, d.c. accelerated, semiconductor carriers as a source of picosecond ... more The use of optically induced, d.c. accelerated, semiconductor carriers as a source of picosecond microwave pulses is examined. The purpose of this study was to determine whether 1) phase shifted, multiple (optical) pulses could be generate on a single semiconductor element and 2) whether multiple inline elements could be stimulated with a single optical pulse. Both of the configurations have potential for simultaneously providing the source and phase control necessary for a steerable target recognition array. The efficiency of both techniques are demonstrated in this preliminary study and the gain which could be realized from cooling the semiconductor sources was evaluated for one specimen. Phase differences for multiple pulses were observed and directly related to the special position of the optical pulses with respect to the detector. The cascades sources showed enhanced forward microwave intensity and also an angular dependence consistent with the two sources and detector geometr...

Research paper thumbnail of Plasmon Behavior in Gold Nano-dot Media

ABSTRACT We present correlations between the plasmon resonance of a gold nano-dots medium suspend... more ABSTRACT We present correlations between the plasmon resonance of a gold nano-dots medium suspended in Al2O3 and the plasmon resonance of a single layer film of solid gold. We also present the effective medium properties of multi-layered, dot-film media. The gold dots were fabricated on Al2O3 substrates by sputter-depositing the gold and then annealing the resultant films. The median dot size ranged from 70 to 250 nm depending on the processing. Successive Au-dot layers were made by depositing Al2O3 over the previous dot pattern followed by depositing another gold film, followed by re-annealing. We used attenuated-total-reflection to couple transverse-magnetic optical waves to the plasmon resonance and controlled the degree of coupling by varying the spacing between the dot medium and the coupling prism. The plasmon resonances for the dot media had asymmetric line shapes compared to that for the continuous gold film. We were able to show correlations between that asymmetry and the spatial parameters of the dot/Al2O3 media construction. Effective media parameters and the dispersion characteristics for nano-dot/Al2O3 bi-layer were determined.

Research paper thumbnail of Semiconductor Selection and Optimization for use in a Laser Induced Pulsed Pico-Second Electromagnetic Source

The use of optically induced, d.c. accelerated, semiconductor carriers as a source of picosecond ... more The use of optically induced, d.c. accelerated, semiconductor carriers as a source of picosecond microwave pulses is examined. The purpose of this study was to determine whether 1) phase shifted, multiple (optical) pulses could be generatec on a single semiconductor element and 2) whether multiple inline elements could be stimulated with a single optical pulse. Both of the configurations have potential for simultaneously providing the source and phase control necessary for a steerable target recognition array. The efficiency of both technique s are demonstrated in tins preliminary study and the gain which could be realized from cooling the semiconductor sources was evaluated for one specimen. Phase differences for multiple pulses were observed and directly related to the special position of the optical pulses with respect to the detector. The cascades sources showed enhanced forward microwave intensity and also an angular dependence consistent with the two sources and detector geometry. Cooling from room temperature to 100K resulted in approximately a three fold improvemerjt in microwave strength (from a single element).

Research paper thumbnail of Optical strain gage compatible with fiber optic systems

Research paper thumbnail of Investigation of the effects of sub-threshold high-energy electrons on the properties of silicon photovoltaic cells. Midway report, Feb 3-Aug 3, 1969

ABSTRACT Subthreshold electron irradiation effects on semiconductor surfaces

Research paper thumbnail of Antenna radiation collimator structure

Research paper thumbnail of System and method for detecting and discriminating between water and ice formation on objects

Research paper thumbnail of Photovoltaic device having polycrystalline base

Research paper thumbnail of Use of room temperature diodes in monitoring specific gases in air, particularly methane and carbon monoxide. Final report, Jul 1970Jul 1974

Research paper thumbnail of Theoretical and experimental investigation of 'grating' type photovoltaic cells

Research paper thumbnail of Rapid liquid phase epitaxy of III-V semiconductors

A technique for liquid phase epitaxy (LPE) of III-V semiconductors is currently under development... more A technique for liquid phase epitaxy (LPE) of III-V semiconductors is currently under development. This method utilizes a saturated solution in laminar flow across the substrate surface to achieve time-independent growth rates that are calcualted to be on the order of 50 times higher than in conventional LPE methods. This growth technique is expected to have applications in reducing the production cost of simple epitaxial structures such as photovoltaic devices. The method is briefly described. Plans for the near future include extension of this method to growth of GaAs at 600 C. The advantage of the lower growth temperature, while maintaining reasonable growth rate, is that unwanted impurity incorporatin and thermal stress induced dislocation density are expected to be lower than if the layers were grown at higher temperatures.

Research paper thumbnail of Electromagnetic Component Research

This report documents basic research in electromagnetic components performed by members of the An... more This report documents basic research in electromagnetic components performed by members of the Antenna Technology Branch of the Air Force Research Laboratory in collaboration with on-site contractors. The work includes modeling and measurement of III-V compound semiconductor devices for microwave and millimeter-wave transmit and receive applications, investigations of the factors that limit lifetime of radio frequency micro-electro-mechanical switches, creation of new micro-electro-mechanical and micromachined electromagnetic components, and investigation of the potential of emerging material systems for application to components. The research was supported by the Air Force Office of Scientific Research under Laboratory Tasks 92SN04COR and 07RY06COR.

Research paper thumbnail of Surface etching of YBCO films by xenon difluoride

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2005

... Benjamin L. Crossley, Alvin J. Drehman, James R. Reid, John S. Derov, Alfredo A. Corrales,Eve... more ... Benjamin L. Crossley, Alvin J. Drehman, James R. Reid, John S. Derov, Alfredo A. Corrales,Everett E. Crisman. Abstract. We have demonstrated that xenon difluoride etches thin films of , the superconducting form of yttrium–barium–copper–oxide (YBCO), during dry etch ...

Research paper thumbnail of Electrical Characterization of Some Native Insulators on Germanium

MRS Proceedings, 1986

ABSTRACTPreliminary characterization of two native insulators on germanium is reported. A techniq... more ABSTRACTPreliminary characterization of two native insulators on germanium is reported. A technique for preparing oxide by a room temperature chemical technique (wet chemical oxidation) is described. Compositional data based on IR transmission and ellipsometry, as well as characteristics of MOS capacitors based on this film are given. Also, compositional and electrical characterization of nitrided atmospheric pressure oxides are reported here. These films have very low fixed charge and interface state densities, and show excellent potential for use as gate insulators in a germanium MOS technology.

Research paper thumbnail of Strain and temperature effects in indium–tin-oxide sensors

ABSTRACT Indium–tin-oxide (ITO) thin films strain gages were prepared by reactive sputtering onto... more ABSTRACT Indium–tin-oxide (ITO) thin films strain gages were prepared by reactive sputtering onto both high purity alumina and lanthanum stabilized zirconia substrates. We report the piezoresistive response of these ITO gages in the temperature range 350–1500°C up to 1000 microstrain (με). Strain response and gage factors are reported for ITO in both tension and compression. The data suggest that not only is there an annealing component but also a strain component of the piezoresistive change with time at temperature. The effects in both tension and compression are reported.

Research paper thumbnail of Free space measured loss comparison of single and double Ring resonators for negative index media

2007 IEEE Antennas and Propagation International Symposium, 2007

Public reporting burden for this collection of information is estimated to average 1 hour per res... more Public reporting burden for this collection of information is estimated to average 1 hour per response, including the time for reviewing instructions, searching existing data sources, gathering and maintaining the data needed, and completing and reviewing this collection of information. Send comments regarding this burden estimate or any other aspect of this collection of information, including suggestions for reducing this burden to Department of Defense, Washington Headquarters Services, Directorate for Information Operations and Reports (0704-0188), 1215 Jefferson Davis Highway, Suite 1204, Arlington, VA 22202-4302. Respondents should be aware that notwithstanding any other provision of law, no person shall be subject to any penalty for failing to comply with a collection of information if it does not display a currently valid OMB control number.

Research paper thumbnail of Observation of Large, Anomalous Pyroelectric Response in AlN Thin Films

MRS Proceedings, 2011

ABSTRACTWe have observed a pyroelectric effect (PE) in reactively sputtered aluminum nitride (AlN... more ABSTRACTWe have observed a pyroelectric effect (PE) in reactively sputtered aluminum nitride (AlN) thin films that is typically a factor of twenty greater than commercial pyroelectric materials such as triglycine sulfate (TGS). This is most likely due to an extrinsic effect since the known crystalline structures of AlN are too symmetric to allow such high values for the PE response. Preliminary annealing studies support the assumption that residual strains remaining from the AlN thin film deposition are the most likely source of the anomalously high PE response. The results of these studies are presented along with some measurements that indicate a still higher PE response might be obtainable.

Research paper thumbnail of Observation of Large, Anomalous Pyroelectric Response in AlN Thin Films

MRS Proceedings, 2011

ABSTRACTWe have observed a pyroelectric effect (PE) in reactively sputtered aluminum nitride (AlN... more ABSTRACTWe have observed a pyroelectric effect (PE) in reactively sputtered aluminum nitride (AlN) thin films that is typically a factor of twenty greater than commercial pyroelectric materials such as triglycine sulfate (TGS). This is most likely due to an extrinsic effect since the known crystalline structures of AlN are too symmetric to allow such high values for the PE response. Preliminary annealing studies support the assumption that residual strains remaining from the AlN thin film deposition are the most likely source of the anomalously high PE response. The results of these studies are presented along with some measurements that indicate a still higher PE response might be obtainable.

Research paper thumbnail of The Oxidation of Germanium Surfaces at Pressures Much Greater Than One Atmosphere

Journal of The Electrochemical Society, 1982

Research paper thumbnail of The eye wink control interface: using the computer to provide the severely disabled with increased flexibility and comfort

IEEE Symposium on Computer-Based Medical Systems, 1990

The eye wink control interface was designed to enable severely handicapped individuals to control... more The eye wink control interface was designed to enable severely handicapped individuals to control mechanical devices by using eye winks of varying duration without having their head motion or speech restricted. The advantages of this computer-based system are (1) an unobtrusive and inexpensive control device, (2) increased comfort for the user, and (3) an increase in the number and complexity

Research paper thumbnail of Semiconductor Selection and Optimization for use in a Laser Induced Pulsed Pico-Second Electromagnetic Source

The use of optically induced, d.c. accelerated, semiconductor carriers as a source of picosecond ... more The use of optically induced, d.c. accelerated, semiconductor carriers as a source of picosecond microwave pulses is examined. The purpose of this study was to determine whether 1) phase shifted, multiple (optical) pulses could be generate on a single semiconductor element and 2) whether multiple inline elements could be stimulated with a single optical pulse. Both of the configurations have potential for simultaneously providing the source and phase control necessary for a steerable target recognition array. The efficiency of both techniques are demonstrated in this preliminary study and the gain which could be realized from cooling the semiconductor sources was evaluated for one specimen. Phase differences for multiple pulses were observed and directly related to the special position of the optical pulses with respect to the detector. The cascades sources showed enhanced forward microwave intensity and also an angular dependence consistent with the two sources and detector geometr...

Research paper thumbnail of Plasmon Behavior in Gold Nano-dot Media

ABSTRACT We present correlations between the plasmon resonance of a gold nano-dots medium suspend... more ABSTRACT We present correlations between the plasmon resonance of a gold nano-dots medium suspended in Al2O3 and the plasmon resonance of a single layer film of solid gold. We also present the effective medium properties of multi-layered, dot-film media. The gold dots were fabricated on Al2O3 substrates by sputter-depositing the gold and then annealing the resultant films. The median dot size ranged from 70 to 250 nm depending on the processing. Successive Au-dot layers were made by depositing Al2O3 over the previous dot pattern followed by depositing another gold film, followed by re-annealing. We used attenuated-total-reflection to couple transverse-magnetic optical waves to the plasmon resonance and controlled the degree of coupling by varying the spacing between the dot medium and the coupling prism. The plasmon resonances for the dot media had asymmetric line shapes compared to that for the continuous gold film. We were able to show correlations between that asymmetry and the spatial parameters of the dot/Al2O3 media construction. Effective media parameters and the dispersion characteristics for nano-dot/Al2O3 bi-layer were determined.

Research paper thumbnail of Semiconductor Selection and Optimization for use in a Laser Induced Pulsed Pico-Second Electromagnetic Source

The use of optically induced, d.c. accelerated, semiconductor carriers as a source of picosecond ... more The use of optically induced, d.c. accelerated, semiconductor carriers as a source of picosecond microwave pulses is examined. The purpose of this study was to determine whether 1) phase shifted, multiple (optical) pulses could be generatec on a single semiconductor element and 2) whether multiple inline elements could be stimulated with a single optical pulse. Both of the configurations have potential for simultaneously providing the source and phase control necessary for a steerable target recognition array. The efficiency of both technique s are demonstrated in tins preliminary study and the gain which could be realized from cooling the semiconductor sources was evaluated for one specimen. Phase differences for multiple pulses were observed and directly related to the special position of the optical pulses with respect to the detector. The cascades sources showed enhanced forward microwave intensity and also an angular dependence consistent with the two sources and detector geometry. Cooling from room temperature to 100K resulted in approximately a three fold improvemerjt in microwave strength (from a single element).

Research paper thumbnail of Optical strain gage compatible with fiber optic systems

Research paper thumbnail of Investigation of the effects of sub-threshold high-energy electrons on the properties of silicon photovoltaic cells. Midway report, Feb 3-Aug 3, 1969

ABSTRACT Subthreshold electron irradiation effects on semiconductor surfaces

Research paper thumbnail of Antenna radiation collimator structure

Research paper thumbnail of System and method for detecting and discriminating between water and ice formation on objects

Research paper thumbnail of Photovoltaic device having polycrystalline base

Research paper thumbnail of Use of room temperature diodes in monitoring specific gases in air, particularly methane and carbon monoxide. Final report, Jul 1970Jul 1974

Research paper thumbnail of Theoretical and experimental investigation of 'grating' type photovoltaic cells

Research paper thumbnail of Rapid liquid phase epitaxy of III-V semiconductors

A technique for liquid phase epitaxy (LPE) of III-V semiconductors is currently under development... more A technique for liquid phase epitaxy (LPE) of III-V semiconductors is currently under development. This method utilizes a saturated solution in laminar flow across the substrate surface to achieve time-independent growth rates that are calcualted to be on the order of 50 times higher than in conventional LPE methods. This growth technique is expected to have applications in reducing the production cost of simple epitaxial structures such as photovoltaic devices. The method is briefly described. Plans for the near future include extension of this method to growth of GaAs at 600 C. The advantage of the lower growth temperature, while maintaining reasonable growth rate, is that unwanted impurity incorporatin and thermal stress induced dislocation density are expected to be lower than if the layers were grown at higher temperatures.

Research paper thumbnail of Electromagnetic Component Research

This report documents basic research in electromagnetic components performed by members of the An... more This report documents basic research in electromagnetic components performed by members of the Antenna Technology Branch of the Air Force Research Laboratory in collaboration with on-site contractors. The work includes modeling and measurement of III-V compound semiconductor devices for microwave and millimeter-wave transmit and receive applications, investigations of the factors that limit lifetime of radio frequency micro-electro-mechanical switches, creation of new micro-electro-mechanical and micromachined electromagnetic components, and investigation of the potential of emerging material systems for application to components. The research was supported by the Air Force Office of Scientific Research under Laboratory Tasks 92SN04COR and 07RY06COR.

Research paper thumbnail of Surface etching of YBCO films by xenon difluoride

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2005

... Benjamin L. Crossley, Alvin J. Drehman, James R. Reid, John S. Derov, Alfredo A. Corrales,Eve... more ... Benjamin L. Crossley, Alvin J. Drehman, James R. Reid, John S. Derov, Alfredo A. Corrales,Everett E. Crisman. Abstract. We have demonstrated that xenon difluoride etches thin films of , the superconducting form of yttrium–barium–copper–oxide (YBCO), during dry etch ...

Research paper thumbnail of Electrical Characterization of Some Native Insulators on Germanium

MRS Proceedings, 1986

ABSTRACTPreliminary characterization of two native insulators on germanium is reported. A techniq... more ABSTRACTPreliminary characterization of two native insulators on germanium is reported. A technique for preparing oxide by a room temperature chemical technique (wet chemical oxidation) is described. Compositional data based on IR transmission and ellipsometry, as well as characteristics of MOS capacitors based on this film are given. Also, compositional and electrical characterization of nitrided atmospheric pressure oxides are reported here. These films have very low fixed charge and interface state densities, and show excellent potential for use as gate insulators in a germanium MOS technology.

Research paper thumbnail of Strain and temperature effects in indium–tin-oxide sensors

ABSTRACT Indium–tin-oxide (ITO) thin films strain gages were prepared by reactive sputtering onto... more ABSTRACT Indium–tin-oxide (ITO) thin films strain gages were prepared by reactive sputtering onto both high purity alumina and lanthanum stabilized zirconia substrates. We report the piezoresistive response of these ITO gages in the temperature range 350–1500°C up to 1000 microstrain (με). Strain response and gage factors are reported for ITO in both tension and compression. The data suggest that not only is there an annealing component but also a strain component of the piezoresistive change with time at temperature. The effects in both tension and compression are reported.

Research paper thumbnail of Free space measured loss comparison of single and double Ring resonators for negative index media

2007 IEEE Antennas and Propagation International Symposium, 2007

Public reporting burden for this collection of information is estimated to average 1 hour per res... more Public reporting burden for this collection of information is estimated to average 1 hour per response, including the time for reviewing instructions, searching existing data sources, gathering and maintaining the data needed, and completing and reviewing this collection of information. Send comments regarding this burden estimate or any other aspect of this collection of information, including suggestions for reducing this burden to Department of Defense, Washington Headquarters Services, Directorate for Information Operations and Reports (0704-0188), 1215 Jefferson Davis Highway, Suite 1204, Arlington, VA 22202-4302. Respondents should be aware that notwithstanding any other provision of law, no person shall be subject to any penalty for failing to comply with a collection of information if it does not display a currently valid OMB control number.