E. Dumiszewska - Academia.edu (original) (raw)

Papers by E. Dumiszewska

Materials Science in Semiconductor Processing

Photonics Applications in Astronomy, Communications, Industry, and High-Energy Physics Experiments 2019, 2019

The growth process of molybdenum disulfide (MoS2) films on SiO2, Al2O3 and BN substrates is prese... more The growth process of molybdenum disulfide (MoS2) films on SiO2, Al2O3 and BN substrates is presented. Samples were measured by Raman spectroscopy and Secondary Ion Mass Spectrometry to investigate mechanism of increase lateral dimensions and quality of growth material. Size of obtained layers is crucial for further processing and application into current microelectronic devices. Considering all the substrates used in sulfurization process of molybdenum layers, hexagon Boron Nitride (hBN) is the most promising material. It is the result of its high crystalline quality and lack of oxygen atoms, which diffuse to surface during production process in 750°C and disallow to increase dimensions of MoS2. Described method of sulfurization creates possibility of production of that material on large area substrates and easy integration with other two dimensional compounds like graphene, WS2, SiC, hBN for new types of electronic applications.

Przegląd Elektrotechniczny, 2014

, tel.: +48 261 839 374 Streszczenie: W pracy zaprezentowano technologię wytwarzania nanodrutów I... more , tel.: +48 261 839 374 Streszczenie: W pracy zaprezentowano technologię wytwarzania nanodrutów InP na podłożach InP o orientacji (100) oraz (111)B oraz nanodrutów GaAs na podłożach GaAs o orientacji (100) i (111). Nanodruty zostały wykonane za pomocą metody Epitaksji z Fazy Gazowej z Użyciem Związków Metaloorganicznych (MOVPE). Jako katalizator wzrostu wykorzystano nanocząstki złota o średnicy ~ 30 nm. Wszystkie prace zostały wykonane w zakładzie Epitaksji i Charakteryzacji Związków Półprzewodnikowych ITME.

W pracy omowiono typowe problemy pojawiające sie podczas epitaksji związkow azotowych. Wykonano w... more W pracy omowiono typowe problemy pojawiające sie podczas epitaksji związkow azotowych. Wykonano warstwy GaN na warstwach nukleacyjnych GaN oraz AIN. Otrzymano warstwy domieszkowane krzemem o koncentracji elektronow 10" cm ' oraz domieszkowane magnezem o koncentracji dziur 10" cm \ odpowiednio. Zoptymalizowano parametry wzrostu warstw Al^Gaj N. Otrzymano warstwe o wysokim skladzie Al oraz grubości potrzebnej do wykonania struktury detektorow. Obnizenie temperatury wzrostu do 700°C oraz zastosowanie dodatkowego źrodla Ga (TEGa) pozwolilo na uzyskanie warstw emitujących promieniowanie fotoluminescencyjne do dlugości fali od 350 do 500 nm, a co za tym idzie wykonanie struktur dla diod emitujących światlo niebieskie i zielone.

SPIE Proceedings, 2016

Epitaxial lift-off (ELO) is a process which enables the removal of solar cell structures (one jun... more Epitaxial lift-off (ELO) is a process which enables the removal of solar cell structures (one junction GaAs, two junction GaAs/InGaP or three junction GaAs/InGaAs/InGaP) from the substrate on which they are grown and their transfer onto lightweight carriers such as metal or polymeric insulator films. The said solar cells exhibit superior power conversion efficiency compared with alternative single-junction photovoltaic cell designs such as those based on crystalline Si, copper indium gallium sulfide (CIGS) or CdTe. The major advantage of ELO solar cells is the potential for wafer reuse, which can enable significant manufacturing cost reduction by minimizing the consumption of expensive wafers. Here in this work we have grown one junction GaAs solar cells on GaAs (100) substrates. A 10 nm thick AlAs layer has been used as a release layer, which has been selectively etched in HF solution. We have investigated different methods of transferring thin films onto polymer and copper foils, including the usage of temporary mounting adhesives and electro-conductive pastes. Lift-off has been demonstrated to be a very promising technique for producing affordable solar cells with a very high efficiency of up to 30%.

Materials Science-Poland, 2016

Three different types of samples of InP nanowires, i.e. undoped, doped with Si and doped with Te,... more Three different types of samples of InP nanowires, i.e. undoped, doped with Si and doped with Te, were grown and measured using SEM and Raman spectroscopy. Scanning Electron Microscope (SEM) images showed differences in the length, homogeneity and curvature of the nanowires. The most homogenous wires, grown most perpendicular to the surface, were those Si doped. They were also the shortest. Raman spectroscopy showed that the nanowires doped with Si had the lowest Full Width at Half Maximum (FWHM) TO band, which suggests the highest crystal quality of these wires. For the wires doped with Te, which were the most inhomogeneous, a low energy acoustic band was also observed, which suggests the lowest crystal quality of these structures.

physica status solidi c, 2011

Thermal diffusion and incorporation of oxygen in gallium nitride during MOVPE growth process was ... more Thermal diffusion and incorporation of oxygen in gallium nitride during MOVPE growth process was investigated using secondary ion mass spectroscopy. The source of oxygen were (18O) implanted into GaN or Al2O3 substrate. Experiment shows no oxygen diffusion from Ar‐implanted sapphire or O‐implanted GaN and extremely deep diffusion from O‐implanted sapphire. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

physica status solidi c, 2006

The aim of this work is to determine diffusion coefficient of silicon in gallium nitride under di... more The aim of this work is to determine diffusion coefficient of silicon in gallium nitride under different annealing conditions. Silicon was implanted into 3 µm thick GaN layer deposited on sapphire substrate with MOVPE (Metalorganic Vapour Phase Epitaxy) method. Implantation was performed at room temperature to a dose of 6×10 15 /cm 2 at energy of 100 keV. The samples were annealed under 1 atm nitrogen pressure at 900-1200 °C with or without an AlN protective layer. The extent of diffusion of the implanted species was characterized using the SIMS (Secondary Ion Mass Spectrometry) technique. The resultant concentration profiles are characterized with two diffusion fronts: slow diffused Si atoms at high concentration and fast diffused Si atoms at low concentration. We ascribe the first mechanism as to originate from diffusion in the crystal bulk (substitutional migration), while the second one-from diffusion via grain boundaries/dislocations. Si diffusion coefficient in a crystal was found to be dependent on annealing conditions, in contrast to diffusion via grain boundary. Calculated diffusion coefficient parameters for annealing with and without AlN layer amount respectively to: D O = 6.5×10-11 cm 2 /s, E a = 0.89 eV and D O = 9.1×10-8 cm 2 /s, E a = 1.55 eV.

Opto-Electronics Review, 2011

The antimonide laser heterostructures growth technology using MBE epitaxy is currently well-devel... more The antimonide laser heterostructures growth technology using MBE epitaxy is currently well-developed, while MOVPE method is still being improved. It is known that the principal problem for MOVPE is the oxygen and carbon contamination of aluminium containing waveguides and claddings. The solution would be to apply a proper aluminium precursor. In this study we present the results of metal-organic epitaxy of In- and Al-containing layers and quantum well structures composing antimonide lasers devices. Special emphasis was put on the aluminium precursor and its relation to AlGaSb and AlGaAsSb materials properties. The crystalline quality of the layers grown with two different Al precursors was compared, very good structural quality films were obtained. The results suggested a substantial influence of precursors pre-reactions on the epitaxial process. The oxygen contamination was measured by SIMS, which confirmed its dependence on the precursor choice. We also optimised the GaSb substra...

Crystal Research and Technology, 2005

ABSTRACT The crystallographic structures of the various Metalorganic Vapour Phase Epitaxy (MOVPE)... more ABSTRACT The crystallographic structures of the various Metalorganic Vapour Phase Epitaxy (MOVPE) thin GaN epitaxial layers deposited on (00.1) sapphire substrates are described and compared with the structural properties of the thick gallium nitride layers deposited by Hydride Vapour Phase Epitaxy (HVPE) on the top of them. The crystallographic structure and the quality of epitaxial GaN layers obtained in this way are determined. Additionally thick HVPE GaN layers deposited on these composite substrates (MOVPE-GaN/sapphire) are compared with the thick HVPE GaN layers grown directly on sapphire substrates. It was found that HVPE thick GaN epilayers on sapphire are comparable with the HVPE thick GaN layers deposited on composite substrates. (© 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

Crystal Research and Technology, 2007

Thick GaN layers deposited in HVPE system on composite substrates made on sapphire substrates in ... more Thick GaN layers deposited in HVPE system on composite substrates made on sapphire substrates in Metalorganic Vapour Phase Epitaxy (MOVPE) system have been investigated. The following substrates were used: (00.1) sapphire substrates with AlN, AlN/GaN and GaN thin layers. The crystallographic structure and the quality of the epitaxial thick GaN layers were determined. Comparison of the three types of thick layers was performed. Significant differences were observed. It was found that thick GaN deposited on the simplest MOVPE-GaN/sapphire composite substrate has comparable structure's properties as the other, more complicated.

Acta Physica Polonica A, 2011

Journal of Superhard Materials, 2007

We investigated the problem of oxygen dislocations interaction and its influence on carrier conce... more We investigated the problem of oxygen dislocations interaction and its influence on carrier concentration in GaN layers. We achieved the samples with various dislocation density. Then we checked carrier concentration by means of Hall measurements. The samples with a higher EPD were characterized by a higher electron concentration. We assumed that oxygen diffuses along the threading dislocation lines, acts as a shallow donor and influences unintentional doping. Hence, the more dislocations present in GaN layers, the higher carrier concentration.