E. Fretwurst - Academia.edu (original) (raw)
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Papers by E. Fretwurst
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Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 2000
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Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 2007
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Shallow defect levels in floating zone (FZ) and diffusion oxygenated FZ (DOFZ) silicon, before an... more Shallow defect levels in floating zone (FZ) and diffusion oxygenated FZ (DOFZ) silicon, before and after irradiation with a 60Co gamma-source up to 300 Mrad, have been studied by thermally stimulated currents (TSC) and deep level transient spectroscopy (DLTS) in the temperature range 4.2-110 K. Besides vacancy oxygen (VO) and interstitial-substitutional carbon (CiCs) emissions, several TSC peaks have been observed. A trap with an activation energy of 11 meV has been observed at 6 K only in irradiated DOFZ. Two hole traps at 80 meV and 95 meV have been observed both in irradiated FZ and DOFZ, while a trap at 100 meV, related to an interstitial-oxygen (IO2) complex, has been revealed only in irradiated DOFZ. A TSC peak close to 24 K has been resolved into two components, whose concentrations are independent of irradiation fluence: a trap at 55 meV and a level which remains charged after emission at 80 meV. Our measurements confirm the formation, only in DOFZ, of a radiation induced do...
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Nuclear Physics A, 1992
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Nuclear Physics A, 1987
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Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 2006
CMOS monolithic pixel sensors have emerged in recent years as a viable option for particle tracki... more CMOS monolithic pixel sensors have emerged in recent years as a viable option for particle tracking applications at high-energy physics experiments. Their capability of integrating the sensing element, the first readout and the processing electronics on the same substrate allows the fabrication of highly segmented sensors which provide an excellent spatial resolution with a minimum material budget. In this study,
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Nuclear Instruments and Methods, 1972
ABSTRACT
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Zeitschrift für Physik C: Particles and Fields, 1996
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Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 2013
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Physics Letters B, 1994
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Physics Letters B, 1989
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Physics Letters B, 1986
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Physics Letters B, 1995
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Physica B: Condensed Matter, 2003
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Nuclear Physics B - Proceedings Supplements, 1998
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Nuclear Physics B - Proceedings Supplements, 1993
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Nuclear Physics B, 1995
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Nuclear Physics B, 1993
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Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 2000
Bookmarks Related papers MentionsView impact
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 2007
Bookmarks Related papers MentionsView impact
Shallow defect levels in floating zone (FZ) and diffusion oxygenated FZ (DOFZ) silicon, before an... more Shallow defect levels in floating zone (FZ) and diffusion oxygenated FZ (DOFZ) silicon, before and after irradiation with a 60Co gamma-source up to 300 Mrad, have been studied by thermally stimulated currents (TSC) and deep level transient spectroscopy (DLTS) in the temperature range 4.2-110 K. Besides vacancy oxygen (VO) and interstitial-substitutional carbon (CiCs) emissions, several TSC peaks have been observed. A trap with an activation energy of 11 meV has been observed at 6 K only in irradiated DOFZ. Two hole traps at 80 meV and 95 meV have been observed both in irradiated FZ and DOFZ, while a trap at 100 meV, related to an interstitial-oxygen (IO2) complex, has been revealed only in irradiated DOFZ. A TSC peak close to 24 K has been resolved into two components, whose concentrations are independent of irradiation fluence: a trap at 55 meV and a level which remains charged after emission at 80 meV. Our measurements confirm the formation, only in DOFZ, of a radiation induced do...
Bookmarks Related papers MentionsView impact
Nuclear Physics A, 1992
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Nuclear Physics A, 1987
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Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 2006
CMOS monolithic pixel sensors have emerged in recent years as a viable option for particle tracki... more CMOS monolithic pixel sensors have emerged in recent years as a viable option for particle tracking applications at high-energy physics experiments. Their capability of integrating the sensing element, the first readout and the processing electronics on the same substrate allows the fabrication of highly segmented sensors which provide an excellent spatial resolution with a minimum material budget. In this study,
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Nuclear Instruments and Methods, 1972
ABSTRACT
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Zeitschrift für Physik C: Particles and Fields, 1996
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Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 2013
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Physics Letters B, 1994
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Physics Letters B, 1989
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Physics Letters B, 1986
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Physics Letters B, 1995
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Physica B: Condensed Matter, 2003
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Nuclear Physics B - Proceedings Supplements, 1998
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Nuclear Physics B - Proceedings Supplements, 1993
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Nuclear Physics B, 1995
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Nuclear Physics B, 1993
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