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ACM Siggraph Computer Graphics, 1985
ABSTRACT We present a new set of lighting models derived from the questions of electromagnetism. ... more ABSTRACT We present a new set of lighting models derived from the questions of electromagnetism. These models describe the reflection and refraction of light from surfaces which exhibit anisotropy---surfaces with preferred directions. The model allows a new mapping ...
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Bookmarks Related papers MentionsView impact
Recombination statistics, based upon a single dominant level, have been used to predict the relat... more Recombination statistics, based upon a single dominant level, have been used to predict the relative characteristics of gold diffused, platinum diffused, and electron irradiated silicon. These calculations indicate that gold diffused devices will have the best trade-off curve between forward voltage drop and reverse recovery time while exhibiting the highest leakage current levels. The leakage currents of platinum diffused devices are comparable to electron irradiated devices but have a better forward drop-reverse recovery trade-off curve. These calculations have been experimentally verified.
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Journal of Applied Physics, 1976
Platinum was diffused into p+nn+ and n+pp+ silicon diodes at temperatures ranging from 860 to 910... more Platinum was diffused into p+nn+ and n+pp+ silicon diodes at temperatures ranging from 860 to 910 °C for approximately 1 h. Using deep-level transient spectroscopy, six levels associated with platinum in these silicon devices were detected. Ev+0.19 eV, Ev+0.28 eV, Ev+0.33 eV, Ev+0.41 eV, Ec-0.34 eV, and Ec-0.23 eV. The concentrations, thermal emission rates, and the capture cross sections for majority carriers at these defects are reported. The Ec-0.34 eV level has not been previously characterized but is probably the dominant recombination center.
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Journal of Applied Physics, 1976
Two electron traps-A2 and A3-produced in n-type silicon by 1.5-MeV-electron irradiation are chara... more Two electron traps-A2 and A3-produced in n-type silicon by 1.5-MeV-electron irradiation are characterized by deep level transient spectroscopy. Activation energies of trapped majority carriers and capture cross sections for majority carriers at these levels are reported. From their production rates and annealing behaviors, they have been identified as different charge states of the same defect. Detailed annealing studies show that their annealing kinetics is first order with an activation energy of 1.47 eV. It is suggested that the defect is the divacancy and that dissociation is the likely process for its removal in these devices.
Bookmarks Related papers MentionsView impact
Bookmarks Related papers MentionsView impact
ACM Siggraph Computer Graphics, 1985
ABSTRACT We present a new set of lighting models derived from the questions of electromagnetism. ... more ABSTRACT We present a new set of lighting models derived from the questions of electromagnetism. These models describe the reflection and refraction of light from surfaces which exhibit anisotropy---surfaces with preferred directions. The model allows a new mapping ...
Bookmarks Related papers MentionsView impact
Bookmarks Related papers MentionsView impact
Recombination statistics, based upon a single dominant level, have been used to predict the relat... more Recombination statistics, based upon a single dominant level, have been used to predict the relative characteristics of gold diffused, platinum diffused, and electron irradiated silicon. These calculations indicate that gold diffused devices will have the best trade-off curve between forward voltage drop and reverse recovery time while exhibiting the highest leakage current levels. The leakage currents of platinum diffused devices are comparable to electron irradiated devices but have a better forward drop-reverse recovery trade-off curve. These calculations have been experimentally verified.
Bookmarks Related papers MentionsView impact
Journal of Applied Physics, 1976
Platinum was diffused into p+nn+ and n+pp+ silicon diodes at temperatures ranging from 860 to 910... more Platinum was diffused into p+nn+ and n+pp+ silicon diodes at temperatures ranging from 860 to 910 °C for approximately 1 h. Using deep-level transient spectroscopy, six levels associated with platinum in these silicon devices were detected. Ev+0.19 eV, Ev+0.28 eV, Ev+0.33 eV, Ev+0.41 eV, Ec-0.34 eV, and Ec-0.23 eV. The concentrations, thermal emission rates, and the capture cross sections for majority carriers at these defects are reported. The Ec-0.34 eV level has not been previously characterized but is probably the dominant recombination center.
Bookmarks Related papers MentionsView impact
Journal of Applied Physics, 1976
Two electron traps-A2 and A3-produced in n-type silicon by 1.5-MeV-electron irradiation are chara... more Two electron traps-A2 and A3-produced in n-type silicon by 1.5-MeV-electron irradiation are characterized by deep level transient spectroscopy. Activation energies of trapped majority carriers and capture cross sections for majority carriers at these levels are reported. From their production rates and annealing behaviors, they have been identified as different charge states of the same defect. Detailed annealing studies show that their annealing kinetics is first order with an activation energy of 1.47 eV. It is suggested that the defect is the divacancy and that dissociation is the likely process for its removal in these devices.
Bookmarks Related papers MentionsView impact