Edward Hakim - Academia.edu (original) (raw)

Papers by Edward Hakim

Influence of Tempemture on Microelectronics and System Reliability, 2020

: Burn-out of power transistors is a continuing problem that we are all aware of. The problem is ... more : Burn-out of power transistors is a continuing problem that we are all aware of. The problem is not only unique with audio devices but is also prevalent with devices for HF, VHF, and UHF operations. Limited technical information is available as to the conditions leading to the failure of RF power devices under operating conditions. By applying infrared scanning techniques, insight has been obtained on the mechanisms leading to failure. The infrared scanning results have proved, by means of operational amplifier results, that failures formerly noted can be eliminated, thus leading to trouble-free operations. The infrared radiometer used is commercially available. It has the potential of resolving a hot spot of 0.3 mils in diameter. RF hot-spot temperature measurements were made on several devices having different design parameters. Evaluation of devices was made by analysis of 'hot-spot' thermal resistance plots. Included are data of experiments made on devices under pulsed ...

NOTICE: When government or other drawings, specifications or other data are used for any purpose ... more NOTICE: When government or other drawings, specifications or other data are used for any purpose other than in connection with a definitely related government procurement operation, the U. S. Government thereby incurs no responsibility, nor any obligation whatsoever; and the fact that the Government may have formulated, furnished, or in any way supplied the said drawings, specifications, or other data is not to be regarded by implication or otherwise as in any manner licensing the holder or any other person or corporation, or conveying any rights or permission to manufacture, use or sell any patented invention that may in any way be related thereto.

Influence of Tempemture on Microelectronics and System Reliability, 2020

10th Reliability Physics Symposium, 1972

This paper describes results of tests performed under field conditions and compares these results... more This paper describes results of tests performed under field conditions and compares these results with data obtained from accelerated laboratory testing. A model is developed for plastic encapsulated semiconductors relating failure rate and the sum of temperature and relative humidity. With this relationship, accelerated temperature-humidity tests can be applied to predict field failure rates of plastic encapsulated transistors and integrated

12th International Reliability Physics Symposium, 1974

Gallium Arsenide Gunn diodes have been investigated for long-term reliability prediction and veri... more Gallium Arsenide Gunn diodes have been investigated for long-term reliability prediction and verification of failure mechanisms. Data are presented concerning burn-out distribution in time, change in DC and RF parameters after DC high temperature burn-in, and step-stress testing. Alloying of the contact metalization into the active region above a critical temperature hampered interpretation of the step-stress results. Accordingly, constant stress testing was initiated. An improved thermal resistance measurement technique is presented for Gunn diodes. Results are verified using an IR radiometer.

Abstract : The current state-of-the-art of pulsed thermal resistance measurements is reviewed. So... more Abstract : The current state-of-the-art of pulsed thermal resistance measurements is reviewed. Some of the reasons are presented for the apparent lack of correlation in thermal measurements when these techniques are used. Two techniques of continuous thermal resistance measurements are presented and possible sources of error indicated. Some preliminary data is presented which indicates that thermal resistance measurements made by the continuous hFE technique is the most sensitive method currently known. (Author)

Thermal Management of Electronic Systems II, 1997

Many reliability engineers and system designers consider temperature to be a major factor affecti... more Many reliability engineers and system designers consider temperature to be a major factor affecting the reliability of electronic equipment. Unfortunately, in an effort to improve reliability, design teams have often lowered temperature without fully understanding the impact on cooling system reliability, in dollars, weight, and size, and the extent of any actual reliability improvement.

Quality and Reliability Engineering, 1992

Temperature is generally considered to be a key parameter in the design of electronic equipment, ... more Temperature is generally considered to be a key parameter in the design of electronic equipment, and cautions concerning temperature and its relationship to reliability are widely documented. While some studies suggest that temperature is the most critical stress influence on microelectronic device failures, the actual failure mechanisms have generally not been quantified in terms of whether a steady state temperature, temperature change, rate of temperature change, or spatial temperature gradient induced failure. In this paper, the influence of temperature on major integrated circuit failure mechanisms is discussed, with emphasis placed on those failure mechanisms which occur in the temperature range of-55°C to 125°C. This paper shows that no simple expression can adequately describe temperature as a failure accelerator for all integrated circuit failure mechanisms. In fact, a generic statement that can be attributed to temperature is lacking. This suggests that a much deeper level of insight into temperature dependencies is necessary to achieve reliable equipment and avoid unnecessary thermal design complexities. Thermal management in electronic equipment can involve additional costs and system complexities that can be of consequential importance, and temperature control should not be routinely employed without close study and justification. KEY WORDS Steady state temperature Temperature cycle magnitude Temperature gradient Time dependent temperature change Reliability Performance

Quality and Reliability Engineering International, 1990

The U.S. Department of Defence (DoD) has undertaken the task of modernizing the procedure for qua... more The U.S. Department of Defence (DoD) has undertaken the task of modernizing the procedure for qualification of military high-quality/high-reliability microcircuits. This new approach, known as generic qualification, will develop a qualified manufacturers list (QML) which will permit certification of design, fabrication, assembly and packaging using an innovative approach. The objective is to have a single process flow on which both commercial and military product will be indistinguishable and only at qualification testing (which is revolutionary) will the differences be evident. The realization of this change is implementation of statistical process control (SPC) methodologies and total quality management (TQM).

Quality and Reliability Engineering International, 1991

It is shown that microelectronic failures which occur within equipment operating temperature extr... more It is shown that microelectronic failures which occur within equipment operating temperature extremes are not dependent on absolute temperature! Therefore, tremendous equipment reductions can be made in size, weight and cost, and there will be an improvement in reliability by elimination of failures due to unreliable complex cooling systems.

Quality and Reliability Engineering International, 1985

Microelectronics Reliability, 1973

Page 1. w0o wANTS RELIABLE PLASTIC SEDICONDuCTo¶Rs? by E. B. Hakim G. Malinowski R. Holevinski Se... more Page 1. w0o wANTS RELIABLE PLASTIC SEDICONDuCTo¶Rs? by E. B. Hakim G. Malinowski R. Holevinski Semiconductor Devices & Integrated Electronics Techni-dal Area US Army Electronics Technology and Devices Laboratory (ECOM) Fort Monmouth, NJ 07703 ...

Microelectronics Reliability, 1970

Abstract : By the application of an infrared radiometer as the sensor, hot-spot formation is dete... more Abstract : By the application of an infrared radiometer as the sensor, hot-spot formation is detected and a hot-spot thermal resistance is calculated. Hot-spot formation for both forward and reverse biased second breakdown is analyzed. Pulsed DC techniques are used in the investigation which allows for a wide range of possible operating biases to be applied. (Author)

Microelectronics Reliability, 1978

Over 175 million device hours have been accumulated on 5688 transistors and 1316 bipolar microcir... more Over 175 million device hours have been accumulated on 5688 transistors and 1316 bipolar microcircuits in seven years of testing in the Panama Canal Zone. Failure rates and failure modes of biased and stored plastic encapsulated devices are detailed. The data indicate that certain plastic packaged microcircuits have performed as well as hermetic ceramic units on this test. Preliminary CMOS reliability information is also presented.

Microelectronics Reliability, 1998

Abstract Since the early 1980s, with significant improvement in plastic packaging of microcircuit... more Abstract Since the early 1980s, with significant improvement in plastic packaging of microcircuits, accelerated environmental testing has indicated continuous reliability improvements. These data have been generated by independent researchers, Universities, users and suppliers. The question which still remains concerns their use in high reliability applications for extended periods in harsh environments. Such applications would be in the military, automotive, and commercial airline markets. This report is the result of responses to a survey directed at military equipment developers. Its goal was to determine advantages and disadvantages in the use of commercial plastic encapsulated microcircuits (PEMs) versus the use of MIL approved microcircuits as received by the equipment manufacturer. Responses, however, impacted all three markets, not only military.

Influence of Tempemture on Microelectronics and System Reliability, 2020

: Burn-out of power transistors is a continuing problem that we are all aware of. The problem is ... more : Burn-out of power transistors is a continuing problem that we are all aware of. The problem is not only unique with audio devices but is also prevalent with devices for HF, VHF, and UHF operations. Limited technical information is available as to the conditions leading to the failure of RF power devices under operating conditions. By applying infrared scanning techniques, insight has been obtained on the mechanisms leading to failure. The infrared scanning results have proved, by means of operational amplifier results, that failures formerly noted can be eliminated, thus leading to trouble-free operations. The infrared radiometer used is commercially available. It has the potential of resolving a hot spot of 0.3 mils in diameter. RF hot-spot temperature measurements were made on several devices having different design parameters. Evaluation of devices was made by analysis of 'hot-spot' thermal resistance plots. Included are data of experiments made on devices under pulsed ...

NOTICE: When government or other drawings, specifications or other data are used for any purpose ... more NOTICE: When government or other drawings, specifications or other data are used for any purpose other than in connection with a definitely related government procurement operation, the U. S. Government thereby incurs no responsibility, nor any obligation whatsoever; and the fact that the Government may have formulated, furnished, or in any way supplied the said drawings, specifications, or other data is not to be regarded by implication or otherwise as in any manner licensing the holder or any other person or corporation, or conveying any rights or permission to manufacture, use or sell any patented invention that may in any way be related thereto.

Influence of Tempemture on Microelectronics and System Reliability, 2020

10th Reliability Physics Symposium, 1972

This paper describes results of tests performed under field conditions and compares these results... more This paper describes results of tests performed under field conditions and compares these results with data obtained from accelerated laboratory testing. A model is developed for plastic encapsulated semiconductors relating failure rate and the sum of temperature and relative humidity. With this relationship, accelerated temperature-humidity tests can be applied to predict field failure rates of plastic encapsulated transistors and integrated

12th International Reliability Physics Symposium, 1974

Gallium Arsenide Gunn diodes have been investigated for long-term reliability prediction and veri... more Gallium Arsenide Gunn diodes have been investigated for long-term reliability prediction and verification of failure mechanisms. Data are presented concerning burn-out distribution in time, change in DC and RF parameters after DC high temperature burn-in, and step-stress testing. Alloying of the contact metalization into the active region above a critical temperature hampered interpretation of the step-stress results. Accordingly, constant stress testing was initiated. An improved thermal resistance measurement technique is presented for Gunn diodes. Results are verified using an IR radiometer.

Abstract : The current state-of-the-art of pulsed thermal resistance measurements is reviewed. So... more Abstract : The current state-of-the-art of pulsed thermal resistance measurements is reviewed. Some of the reasons are presented for the apparent lack of correlation in thermal measurements when these techniques are used. Two techniques of continuous thermal resistance measurements are presented and possible sources of error indicated. Some preliminary data is presented which indicates that thermal resistance measurements made by the continuous hFE technique is the most sensitive method currently known. (Author)

Thermal Management of Electronic Systems II, 1997

Many reliability engineers and system designers consider temperature to be a major factor affecti... more Many reliability engineers and system designers consider temperature to be a major factor affecting the reliability of electronic equipment. Unfortunately, in an effort to improve reliability, design teams have often lowered temperature without fully understanding the impact on cooling system reliability, in dollars, weight, and size, and the extent of any actual reliability improvement.

Quality and Reliability Engineering, 1992

Temperature is generally considered to be a key parameter in the design of electronic equipment, ... more Temperature is generally considered to be a key parameter in the design of electronic equipment, and cautions concerning temperature and its relationship to reliability are widely documented. While some studies suggest that temperature is the most critical stress influence on microelectronic device failures, the actual failure mechanisms have generally not been quantified in terms of whether a steady state temperature, temperature change, rate of temperature change, or spatial temperature gradient induced failure. In this paper, the influence of temperature on major integrated circuit failure mechanisms is discussed, with emphasis placed on those failure mechanisms which occur in the temperature range of-55°C to 125°C. This paper shows that no simple expression can adequately describe temperature as a failure accelerator for all integrated circuit failure mechanisms. In fact, a generic statement that can be attributed to temperature is lacking. This suggests that a much deeper level of insight into temperature dependencies is necessary to achieve reliable equipment and avoid unnecessary thermal design complexities. Thermal management in electronic equipment can involve additional costs and system complexities that can be of consequential importance, and temperature control should not be routinely employed without close study and justification. KEY WORDS Steady state temperature Temperature cycle magnitude Temperature gradient Time dependent temperature change Reliability Performance

Quality and Reliability Engineering International, 1990

The U.S. Department of Defence (DoD) has undertaken the task of modernizing the procedure for qua... more The U.S. Department of Defence (DoD) has undertaken the task of modernizing the procedure for qualification of military high-quality/high-reliability microcircuits. This new approach, known as generic qualification, will develop a qualified manufacturers list (QML) which will permit certification of design, fabrication, assembly and packaging using an innovative approach. The objective is to have a single process flow on which both commercial and military product will be indistinguishable and only at qualification testing (which is revolutionary) will the differences be evident. The realization of this change is implementation of statistical process control (SPC) methodologies and total quality management (TQM).

Quality and Reliability Engineering International, 1991

It is shown that microelectronic failures which occur within equipment operating temperature extr... more It is shown that microelectronic failures which occur within equipment operating temperature extremes are not dependent on absolute temperature! Therefore, tremendous equipment reductions can be made in size, weight and cost, and there will be an improvement in reliability by elimination of failures due to unreliable complex cooling systems.

Quality and Reliability Engineering International, 1985

Microelectronics Reliability, 1973

Page 1. w0o wANTS RELIABLE PLASTIC SEDICONDuCTo¶Rs? by E. B. Hakim G. Malinowski R. Holevinski Se... more Page 1. w0o wANTS RELIABLE PLASTIC SEDICONDuCTo¶Rs? by E. B. Hakim G. Malinowski R. Holevinski Semiconductor Devices & Integrated Electronics Techni-dal Area US Army Electronics Technology and Devices Laboratory (ECOM) Fort Monmouth, NJ 07703 ...

Microelectronics Reliability, 1970

Abstract : By the application of an infrared radiometer as the sensor, hot-spot formation is dete... more Abstract : By the application of an infrared radiometer as the sensor, hot-spot formation is detected and a hot-spot thermal resistance is calculated. Hot-spot formation for both forward and reverse biased second breakdown is analyzed. Pulsed DC techniques are used in the investigation which allows for a wide range of possible operating biases to be applied. (Author)

Microelectronics Reliability, 1978

Over 175 million device hours have been accumulated on 5688 transistors and 1316 bipolar microcir... more Over 175 million device hours have been accumulated on 5688 transistors and 1316 bipolar microcircuits in seven years of testing in the Panama Canal Zone. Failure rates and failure modes of biased and stored plastic encapsulated devices are detailed. The data indicate that certain plastic packaged microcircuits have performed as well as hermetic ceramic units on this test. Preliminary CMOS reliability information is also presented.

Microelectronics Reliability, 1998

Abstract Since the early 1980s, with significant improvement in plastic packaging of microcircuit... more Abstract Since the early 1980s, with significant improvement in plastic packaging of microcircuits, accelerated environmental testing has indicated continuous reliability improvements. These data have been generated by independent researchers, Universities, users and suppliers. The question which still remains concerns their use in high reliability applications for extended periods in harsh environments. Such applications would be in the military, automotive, and commercial airline markets. This report is the result of responses to a survey directed at military equipment developers. Its goal was to determine advantages and disadvantages in the use of commercial plastic encapsulated microcircuits (PEMs) versus the use of MIL approved microcircuits as received by the equipment manufacturer. Responses, however, impacted all three markets, not only military.