Elayaraja Muthuswamy - Academia.edu (original) (raw)
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Papers by Elayaraja Muthuswamy
Applied Physics Letters, 2013
Spun cast TiO 2 -Ge quantum dot (QD) heterojunction type photodetectors have been fabricated and ... more Spun cast TiO 2 -Ge quantum dot (QD) heterojunction type photodetectors have been fabricated and characterized, with interest paid to photocurrent enhancements related to device design. Performance as a function of absorber layer thickness, QD size, and back contact is investigated. We have achieved ultra-thin ($200 nm) devices with photocurrents at 0.5 V of 10 À4 A cm À2 while the thickest devices have photocurrents at 0.5 V of 10 À2 A cm À2 with on-off ratios >100, which represents 5 orders of magnitude increase in photocurrents over previously fabricated Ge QD devices. At 0.5 V bias, the currents in our devices are competitive with thin-film Ge photovoltaics. V C 2013 AIP Publishing LLC. [http://dx.
Applied Physics Letters, 2013
Spun cast TiO 2 -Ge quantum dot (QD) heterojunction type photodetectors have been fabricated and ... more Spun cast TiO 2 -Ge quantum dot (QD) heterojunction type photodetectors have been fabricated and characterized, with interest paid to photocurrent enhancements related to device design. Performance as a function of absorber layer thickness, QD size, and back contact is investigated. We have achieved ultra-thin ($200 nm) devices with photocurrents at 0.5 V of 10 À4 A cm À2 while the thickest devices have photocurrents at 0.5 V of 10 À2 A cm À2 with on-off ratios >100, which represents 5 orders of magnitude increase in photocurrents over previously fabricated Ge QD devices. At 0.5 V bias, the currents in our devices are competitive with thin-film Ge photovoltaics. V C 2013 AIP Publishing LLC. [http://dx.