Eleftherios Ioannidis - Academia.edu (original) (raw)
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Papers by Eleftherios Ioannidis
IEEE Transactions on Electron Devices, 2015
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A new full gate voltage range methodology using a Lambert W function based inversion charge model... more A new full gate voltage range methodology using a Lambert W function based inversion charge model, for extracting the electrical parameters in FDSOI nano-MOSFET devices, has been developed. Split capacitance–voltage measurements carried out on 14 nm technology FDSOI devices show that the inversion charge variation with gate voltage can be well described by a Lambert W function. Based on the drain current equation in the linear region including the inversion charge described by the Lambert function of gate voltage and the standard mobility equation enables five electrical MOSFET parameters to be extracted from experimental Id–Vg measurements (ideality factor, threshold voltage, low field mobility, first and second order mobility attenuation factors). The extracted parameters were compared with those extracted by the well-known Y-function in strong inversion region. The present methodology for extracting the electrical MOSFET parameters was verified over a wide range of channel length...
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In this paper, we present a thorough investigation of low frequency noise (LFN) and statistical n... more In this paper, we present a thorough investigation of low frequency noise (LFN) and statistical noise variability through CMOS bulk technologies manufactured in STMicroelectronics along the past 12 years. The experimental results are well interpreted by the carrier number (CNF) with correlated mobility (CMF) fluctuation model. This enabled us to plot the evolution with time and technology generation of the oxide trap density N t as a function of equivalent oxide thickness EOT. It appears that, with the device miniaturization, N t has increased from 2x10 16 /eV/cm 3 up to 5-7x10 17 /eV/cm 3 when passing from EOT=12nm for 250nm node to EOT=1.4nm for 28nm node for n-MOS. Despite this increase of the mean trap density N t , the LFN statistical variability has surprisingly been well controlled and even improved in 28nm node, emphasizing the progress in process control in such advanced technologies.
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Solid-State Electronics, 2012
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Solid-State Electronics, 2015
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IEEE Electron Device Letters
In this letter, we demonstrate the existence of the source–drain series resistance mismatch and i... more In this letter, we demonstrate the existence of the source–drain series resistance mismatch and its impact on drain current variability with regard to the other mismatch parameters. To this end, we propose a new methodology for the drain current mismatch study based on YYY -function, enabling a precise determination of the various variability sources in advanced fully depleted silicon on insulator (SOI) MOS devices.
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Low-frequency (LF) noise was studied on 28 nm CMOS technology FDSOI devices with ultra-thin silic... more Low-frequency (LF) noise was studied on 28 nm CMOS technology FDSOI devices with ultra-thin silicon film (7 nm) and thin buried oxide (25 nm). The noise level was observed to be strongly dependent on the combination of the front and back gate biasing voltages. This was explained by the coupling effect of both Si/High-K dielectric and Si/SiO2 interface noise sources (channel/front oxide and channel/buried oxide), in combination with the variation of the Remote Coulomb scattering coefficient α. From comparison of the experimental and simulation results, it is illustrated that the main reason of this dependence is the distance between the charge distribution centroid and the interfaces, which is also controlled by both front and back-gate bias voltages, and the way this distance affects the Remote Coulomb scattering coefficient α. A new LF noise model approach is suggested to include the impact of all these parameters, and also allows us to extract the oxide trap density values for bot...
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2015 IEEE International Reliability Physics Symposium, 2015
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IEEE Transactions on Electron Devices, 2015
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Electronics Letters
The impact on the extracted low-frequency noise (LFN) parameter values due to LFN variability in ... more The impact on the extracted low-frequency noise (LFN) parameter values due to LFN variability in CMOS devices is investigated. First, it is demonstrated that the noise level dispersion follows a log normal statistical distribution. Then, based on this feature, it is explained why the mean values from the linear data are different from the mean values (or median values) calculated from the log noise data. Finally, the consequence of this finding in terms of LFN characterisation issues and Monte Carlo LFN variability circuit simulation is discussed.
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2012 Proceedings of the European Solid-State Device Research Conference (ESSDERC), 2012
ABSTRACT Low-frequency (LF) noise has been studied on 28 nm FDSOI devices with ultra-thin silicon... more ABSTRACT Low-frequency (LF) noise has been studied on 28 nm FDSOI devices with ultra-thin silicon film (7 nm) and thin buried oxide (25 nm). A strong dependence of the noise level on the combination of the front and back biasing voltages was observed, and justified by the coupling effect of both Si/High-K dielectric and Si/SiO2 interface noise sources (channel/front oxide and channel/buried oxide), combined with the change of the Remote Coulomb scattering. From comparisons of the experimental and simulation results, it is shown that the main reason of this dependence is the distance of the charge distribution centroid from the interfaces, which is controlled by both front and back-gate bias voltages, and the way this distance affects the Remote Coulomb scattering coefficient a. A new LF noise model approach is proposed to include all these effects. This also allows us to assess the oxide trap density values for both interfaces.
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2013 22nd International Conference on Noise and Fluctuations (ICNF), 2013
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Solid-State Electronics, 2014
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Solid-State Electronics, 2013
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Journal of Applied Physics, 2010
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Journal of Applied Physics, 2010
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IEEE Transactions on Electron Devices, 2000
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IEEE Transactions on Electron Devices, 2000
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Electronics Letters, 2013
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IEEE Transactions on Electron Devices, 2015
Bookmarks Related papers MentionsView impact
A new full gate voltage range methodology using a Lambert W function based inversion charge model... more A new full gate voltage range methodology using a Lambert W function based inversion charge model, for extracting the electrical parameters in FDSOI nano-MOSFET devices, has been developed. Split capacitance–voltage measurements carried out on 14 nm technology FDSOI devices show that the inversion charge variation with gate voltage can be well described by a Lambert W function. Based on the drain current equation in the linear region including the inversion charge described by the Lambert function of gate voltage and the standard mobility equation enables five electrical MOSFET parameters to be extracted from experimental Id–Vg measurements (ideality factor, threshold voltage, low field mobility, first and second order mobility attenuation factors). The extracted parameters were compared with those extracted by the well-known Y-function in strong inversion region. The present methodology for extracting the electrical MOSFET parameters was verified over a wide range of channel length...
Bookmarks Related papers MentionsView impact
In this paper, we present a thorough investigation of low frequency noise (LFN) and statistical n... more In this paper, we present a thorough investigation of low frequency noise (LFN) and statistical noise variability through CMOS bulk technologies manufactured in STMicroelectronics along the past 12 years. The experimental results are well interpreted by the carrier number (CNF) with correlated mobility (CMF) fluctuation model. This enabled us to plot the evolution with time and technology generation of the oxide trap density N t as a function of equivalent oxide thickness EOT. It appears that, with the device miniaturization, N t has increased from 2x10 16 /eV/cm 3 up to 5-7x10 17 /eV/cm 3 when passing from EOT=12nm for 250nm node to EOT=1.4nm for 28nm node for n-MOS. Despite this increase of the mean trap density N t , the LFN statistical variability has surprisingly been well controlled and even improved in 28nm node, emphasizing the progress in process control in such advanced technologies.
Bookmarks Related papers MentionsView impact
Solid-State Electronics, 2012
Bookmarks Related papers MentionsView impact
Solid-State Electronics, 2015
Bookmarks Related papers MentionsView impact
Bookmarks Related papers MentionsView impact
IEEE Electron Device Letters
In this letter, we demonstrate the existence of the source–drain series resistance mismatch and i... more In this letter, we demonstrate the existence of the source–drain series resistance mismatch and its impact on drain current variability with regard to the other mismatch parameters. To this end, we propose a new methodology for the drain current mismatch study based on YYY -function, enabling a precise determination of the various variability sources in advanced fully depleted silicon on insulator (SOI) MOS devices.
Bookmarks Related papers MentionsView impact
Low-frequency (LF) noise was studied on 28 nm CMOS technology FDSOI devices with ultra-thin silic... more Low-frequency (LF) noise was studied on 28 nm CMOS technology FDSOI devices with ultra-thin silicon film (7 nm) and thin buried oxide (25 nm). The noise level was observed to be strongly dependent on the combination of the front and back gate biasing voltages. This was explained by the coupling effect of both Si/High-K dielectric and Si/SiO2 interface noise sources (channel/front oxide and channel/buried oxide), in combination with the variation of the Remote Coulomb scattering coefficient α. From comparison of the experimental and simulation results, it is illustrated that the main reason of this dependence is the distance between the charge distribution centroid and the interfaces, which is also controlled by both front and back-gate bias voltages, and the way this distance affects the Remote Coulomb scattering coefficient α. A new LF noise model approach is suggested to include the impact of all these parameters, and also allows us to extract the oxide trap density values for bot...
Bookmarks Related papers MentionsView impact
2015 IEEE International Reliability Physics Symposium, 2015
Bookmarks Related papers MentionsView impact
IEEE Transactions on Electron Devices, 2015
Bookmarks Related papers MentionsView impact
Electronics Letters
The impact on the extracted low-frequency noise (LFN) parameter values due to LFN variability in ... more The impact on the extracted low-frequency noise (LFN) parameter values due to LFN variability in CMOS devices is investigated. First, it is demonstrated that the noise level dispersion follows a log normal statistical distribution. Then, based on this feature, it is explained why the mean values from the linear data are different from the mean values (or median values) calculated from the log noise data. Finally, the consequence of this finding in terms of LFN characterisation issues and Monte Carlo LFN variability circuit simulation is discussed.
Bookmarks Related papers MentionsView impact
2012 Proceedings of the European Solid-State Device Research Conference (ESSDERC), 2012
ABSTRACT Low-frequency (LF) noise has been studied on 28 nm FDSOI devices with ultra-thin silicon... more ABSTRACT Low-frequency (LF) noise has been studied on 28 nm FDSOI devices with ultra-thin silicon film (7 nm) and thin buried oxide (25 nm). A strong dependence of the noise level on the combination of the front and back biasing voltages was observed, and justified by the coupling effect of both Si/High-K dielectric and Si/SiO2 interface noise sources (channel/front oxide and channel/buried oxide), combined with the change of the Remote Coulomb scattering. From comparisons of the experimental and simulation results, it is shown that the main reason of this dependence is the distance of the charge distribution centroid from the interfaces, which is controlled by both front and back-gate bias voltages, and the way this distance affects the Remote Coulomb scattering coefficient a. A new LF noise model approach is proposed to include all these effects. This also allows us to assess the oxide trap density values for both interfaces.
Bookmarks Related papers MentionsView impact
2013 22nd International Conference on Noise and Fluctuations (ICNF), 2013
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Solid-State Electronics, 2014
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Solid-State Electronics, 2013
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Journal of Applied Physics, 2010
Bookmarks Related papers MentionsView impact
Journal of Applied Physics, 2010
Bookmarks Related papers MentionsView impact
IEEE Transactions on Electron Devices, 2000
Bookmarks Related papers MentionsView impact
IEEE Transactions on Electron Devices, 2000
Bookmarks Related papers MentionsView impact
Electronics Letters, 2013
Bookmarks Related papers MentionsView impact