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Papers by Erwann Fourmond
HAL (Le Centre pour la Communication Scientifique Directe), Dec 4, 2018
HAL (Le Centre pour la Communication Scientifique Directe), Dec 5, 2017
HAL (Le Centre pour la Communication Scientifique Directe), Nov 30, 2022
HAL is a multidisciplinary open access archive for the deposit and dissemination of scientific re... more HAL is a multidisciplinary open access archive for the deposit and dissemination of scientific research documents, whether they are published or not. The documents may come from teaching and research institutions in France or abroad, or from public or private research centers. L'archive ouverte pluridisciplinaire HAL, est destinée au dépôt et à la diffusion de documents scientifiques de niveau recherche, publiés ou non, émanant des établissements d'enseignement et de recherche français ou étrangers, des laboratoires publics ou privés.
HAL (Le Centre pour la Communication Scientifique Directe), Sep 20, 2021
HAL (Le Centre pour la Communication Scientifique Directe), Sep 9, 2019
The fabrication process of silicon heterojunction (SHJ) solar cells can induce locally depassivat... more The fabrication process of silicon heterojunction (SHJ) solar cells can induce locally depassivated regions (so-called defectivity) because of transportation steps (contact with belts, trays, etc) or simply the environment (presence of particles embedded within surface thin films). This surface passivation spatial heterogeneity is gaining interest as it may hinder the SHJ efficiency improvements allowed by incremental process steps optimizations. An experimentally-supported simulation study is proposed and applied on full size M2 SHJ cells in order to understand how the local a-Si:H/c-Si interface passivation loss impacts the overall cell performance. A simulation framework (developed on ATLAS Silvaco) was first validated through comparisons with experimental results. This step allowed then to use simulations results further to explore and understand the physics behind the defectivity-induced efficiency loss. The cell performance drop due to depassivated regions was attributed to a bias-dependent minority carrier recombination current flow towards the depassivated region, which is shown to affect mainly the Fill Factor.
HAL (Le Centre pour la Communication Scientifique Directe), Mar 9, 2018
HAL is a multidisciplinary open access archive for the deposit and dissemination of scientific re... more HAL is a multidisciplinary open access archive for the deposit and dissemination of scientific research documents, whether they are published or not. The documents may come from teaching and research institutions in France or abroad, or from public or private research centers. L'archive ouverte pluridisciplinaire HAL, est destinée au dépôt et à la diffusion de documents scientifiques de niveau recherche, publiés ou non, émanant des établissements d'enseignement et de recherche français ou étrangers, des laboratoires publics ou privés.
Energy Procedia, Aug 1, 2015
Thermal Atomic Layer Deposition was used to deposit Al 2 O 3 layers with thickness ranging from 2... more Thermal Atomic Layer Deposition was used to deposit Al 2 O 3 layers with thickness ranging from 2 to 100 nm for surface passivation of silicon solar cells. Various characterization techniques were used to evaluate the chemical, physical and optical properties of the layers and interfaces. Minority carrier lifetime around 2 ms was measured for an optimal thickness of 15 nm for as-deposited layers on high resistivity n-type silicon substrate. An annealing step at 400°C increases lifetime up to 5.7ms for the same structure.
HAL (Le Centre pour la Communication Scientifique Directe), Nov 29, 2022
arXiv (Cornell University), Mar 25, 2022
Light Management (LM) is essential for metal-halide perovskite solar cells in their race for reco... more Light Management (LM) is essential for metal-halide perovskite solar cells in their race for record performance. In this review, criteria on materials, processes and photonic engineering are established such as to enhance mainly the short circuit current density, towards high energy yields. These criteria are used to analyse a large panel of solutions envisaged in the literature for single junction cells. Moreover, a perspective based on rigorous electromagnetic simulations performed on various comparable structures is proposed in order to clarify the conclusions, and to pave the way to further performance enhancement in the case of all-perovskite, two-terminal tandem cells.
HAL (Le Centre pour la Communication Scientifique Directe), Sep 9, 2019
HAL (Le Centre pour la Communication Scientifique Directe), Jan 19, 2012
Physics and Simulation of Optoelectronic Devices XXXI
Microcrystalline Silicon-Germanium (µc-SiGe:H) is a low bandgap material whose optical and electr... more Microcrystalline Silicon-Germanium (µc-SiGe:H) is a low bandgap material whose optical and electrical properties strongly depend on deposition conditions. In this work, an above integrated circuit (above-IC) [1]-[3] compatible, near infrared (NIR) sensor based on microcrystalline Silicon-Germanium is produced and characterized. The N-I-P photodiode is obtained by radio frequency plasma enhanced chemical vapor deposition (RF-PECVD) from a SiH4 + GeH4 + H2 gas mixture. Quantum efficiency measurements reveals a 60 at.% Ge fraction is optimal for a 200 nm thick µc-SiGe:H intrinsic absorber layer. Above this threshold, the degradation in electrical properties prevails on the gain in absorption.
Journées nationales du photovoltaïque 2018, Dec 4, 2018
Solar cells can be made better and less expensively by creating them on a sacrificial silicon lay... more Solar cells can be made better and less expensively by creating them on a sacrificial silicon layer and then transferring them to a low-cost substrate.
International audienceno abstrac
HAL (Le Centre pour la Communication Scientifique Directe), Dec 4, 2018
HAL (Le Centre pour la Communication Scientifique Directe), Dec 5, 2017
HAL (Le Centre pour la Communication Scientifique Directe), Nov 30, 2022
HAL is a multidisciplinary open access archive for the deposit and dissemination of scientific re... more HAL is a multidisciplinary open access archive for the deposit and dissemination of scientific research documents, whether they are published or not. The documents may come from teaching and research institutions in France or abroad, or from public or private research centers. L'archive ouverte pluridisciplinaire HAL, est destinée au dépôt et à la diffusion de documents scientifiques de niveau recherche, publiés ou non, émanant des établissements d'enseignement et de recherche français ou étrangers, des laboratoires publics ou privés.
HAL (Le Centre pour la Communication Scientifique Directe), Sep 20, 2021
HAL (Le Centre pour la Communication Scientifique Directe), Sep 9, 2019
The fabrication process of silicon heterojunction (SHJ) solar cells can induce locally depassivat... more The fabrication process of silicon heterojunction (SHJ) solar cells can induce locally depassivated regions (so-called defectivity) because of transportation steps (contact with belts, trays, etc) or simply the environment (presence of particles embedded within surface thin films). This surface passivation spatial heterogeneity is gaining interest as it may hinder the SHJ efficiency improvements allowed by incremental process steps optimizations. An experimentally-supported simulation study is proposed and applied on full size M2 SHJ cells in order to understand how the local a-Si:H/c-Si interface passivation loss impacts the overall cell performance. A simulation framework (developed on ATLAS Silvaco) was first validated through comparisons with experimental results. This step allowed then to use simulations results further to explore and understand the physics behind the defectivity-induced efficiency loss. The cell performance drop due to depassivated regions was attributed to a bias-dependent minority carrier recombination current flow towards the depassivated region, which is shown to affect mainly the Fill Factor.
HAL (Le Centre pour la Communication Scientifique Directe), Mar 9, 2018
HAL is a multidisciplinary open access archive for the deposit and dissemination of scientific re... more HAL is a multidisciplinary open access archive for the deposit and dissemination of scientific research documents, whether they are published or not. The documents may come from teaching and research institutions in France or abroad, or from public or private research centers. L'archive ouverte pluridisciplinaire HAL, est destinée au dépôt et à la diffusion de documents scientifiques de niveau recherche, publiés ou non, émanant des établissements d'enseignement et de recherche français ou étrangers, des laboratoires publics ou privés.
Energy Procedia, Aug 1, 2015
Thermal Atomic Layer Deposition was used to deposit Al 2 O 3 layers with thickness ranging from 2... more Thermal Atomic Layer Deposition was used to deposit Al 2 O 3 layers with thickness ranging from 2 to 100 nm for surface passivation of silicon solar cells. Various characterization techniques were used to evaluate the chemical, physical and optical properties of the layers and interfaces. Minority carrier lifetime around 2 ms was measured for an optimal thickness of 15 nm for as-deposited layers on high resistivity n-type silicon substrate. An annealing step at 400°C increases lifetime up to 5.7ms for the same structure.
HAL (Le Centre pour la Communication Scientifique Directe), Nov 29, 2022
arXiv (Cornell University), Mar 25, 2022
Light Management (LM) is essential for metal-halide perovskite solar cells in their race for reco... more Light Management (LM) is essential for metal-halide perovskite solar cells in their race for record performance. In this review, criteria on materials, processes and photonic engineering are established such as to enhance mainly the short circuit current density, towards high energy yields. These criteria are used to analyse a large panel of solutions envisaged in the literature for single junction cells. Moreover, a perspective based on rigorous electromagnetic simulations performed on various comparable structures is proposed in order to clarify the conclusions, and to pave the way to further performance enhancement in the case of all-perovskite, two-terminal tandem cells.
HAL (Le Centre pour la Communication Scientifique Directe), Sep 9, 2019
HAL (Le Centre pour la Communication Scientifique Directe), Jan 19, 2012
Physics and Simulation of Optoelectronic Devices XXXI
Microcrystalline Silicon-Germanium (µc-SiGe:H) is a low bandgap material whose optical and electr... more Microcrystalline Silicon-Germanium (µc-SiGe:H) is a low bandgap material whose optical and electrical properties strongly depend on deposition conditions. In this work, an above integrated circuit (above-IC) [1]-[3] compatible, near infrared (NIR) sensor based on microcrystalline Silicon-Germanium is produced and characterized. The N-I-P photodiode is obtained by radio frequency plasma enhanced chemical vapor deposition (RF-PECVD) from a SiH4 + GeH4 + H2 gas mixture. Quantum efficiency measurements reveals a 60 at.% Ge fraction is optimal for a 200 nm thick µc-SiGe:H intrinsic absorber layer. Above this threshold, the degradation in electrical properties prevails on the gain in absorption.
Journées nationales du photovoltaïque 2018, Dec 4, 2018
Solar cells can be made better and less expensively by creating them on a sacrificial silicon lay... more Solar cells can be made better and less expensively by creating them on a sacrificial silicon layer and then transferring them to a low-cost substrate.
International audienceno abstrac