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Papers by FARZANEH JALALIBIDGOLI

IEEE Embedded Systems Letters, Mar 1, 2016

In this letter, an ultra-sensitive compact portable microwave life-detection device is introduced... more In this letter, an ultra-sensitive compact portable microwave life-detection device is introduced and implemented with promising results. By utilizing Doppler effect-based systems, vital signs such as heartbeats and breathing can be detected and can be used for finding survivors under earthquake rubble, injured soldiers on battlefields and as lie detection device. This device is tested in both simulated and realistic situations, and it can accurately detect crucial signs of life through highly dense construction materials of about 1.5 m thick and standard density materials of about 10 m while operating at 1.15 GHz center frequency.

Circuits Systems and Signal Processing, Mar 9, 2022

Canadian journal of electrical and computer engineering, 2016

This paper discusses design methodologies for terahertz (THz) and millimeter-wave integrated circ... more This paper discusses design methodologies for terahertz (THz) and millimeter-wave integrated circuits using carbon nanotube field-effect transistors (CNFETs) for the first time. Two systematic approaches have been introduced throughout this paper. Pros and cons of the methods and improvements upon them are explored through both theory and simulation. The first approach is a modified g m /I D technique, which is used for designing the CNFET analog integrated circuits. The characteristics of CNFETs are set using a novel ratio method in order to achieve optimal conditions. The second approach is a microwave method that is used for designing THz integrated circuits. This approach finds the optimal conditions by investigating activity conditions in order to achieve maximum accessible power gain of the device. This paper investigates CNFETs from a noise perspective and introduces promising results. Finally, a 1-THz high-power amplifier using microwave approach with a gain of 21.4 dB is presented for the first time. Résumé-Ce document examine les méthodologies de conception pour les circuits intégrés térahertz (THz) et à ondes millimétriques utilisant des transistors en nanotubes en carbone à effet de champ (CNFETs) pour la première fois. Deux approches systématiques ont été introduites dans le présent document. Les avantages et inconvénients des méthodes ainsi que des améliorations sont explorés à travers la théorie et la simulation. La première approche est une technique gm/ID modifiée qui est utilisée pour la conception de circuits intégrés analogues CNFET. Les caractéristiques des CNFETs sont fixées au moyen d'un nouveau procédé de rapport afin d'obtenir des conditions optimales. La seconde approche est un procédé de micro-ondes qui est utilisé pour la conception de circuits intégrés THz. Cette approche trouve les conditions optimales en explorant les conditions d'activité afin d'atteindre un gain de puissance accessible maximale de l'appareil. Cet article étudie les CNFETs dans une perspective de bruit et présente des résultats prometteurs. Enfin, un amplificateur à haute puissance à 1 THz utilisant l'approche de micro-ondes avec un gain de 21.4 dB est présenté pour la première fois. Index Terms-Amplifier, analog, carbon nanotube field-effect transistor (CNFET), field-effect transistor (FET), g m /I D , high power, integrated circuits, microwave, millimeter-wave, nanoelectronic, nanotube, terahertz (THz).

Circuits, Systems, and Signal Processing, 2022

2018 IEEE Custom Integrated Circuits Conference (CICC), 2018

Recent advances of devices and circuits have made CMOS (Complementary Metal Oxide Semiconductor) ... more Recent advances of devices and circuits have made CMOS (Complementary Metal Oxide Semiconductor) integrated circuits technology an alternative for realizing capable and affordable THz systems. Coherent detection up to 410 GHz and incoherent detection up to 10 THz as well as an almost fully integrated receiver working from 225–280 GHz have been demonstrated using CMOS. Despite the fact that fmax of NMOS transistors has peaked around 320 GHz, it should be possible to coherently detect signals at frequencies beyond 1 THz and with some straightforward modification of processes, to incoherently detect signals at 40 THz in CMOS.

2013 IEEE International RF and Microwave Conference (RFM), 2013

This paper presents two fully integrated cross coupled low phase noise K and Ku bands LC Voltage ... more This paper presents two fully integrated cross coupled low phase noise K and Ku bands LC Voltage Controlled Oscillators (VCO) using symmetric spiral inductors that have been designed and simulated using commercial 0.18μm CMOS technology. The simulated phase noises are around -136.2 dBc/Hz and -129.3 dBc/Hz (PMOS and NMOS respectively) at the offset frequency of 1MHz from the 16.1 GHz and 18.8 GHz center frequencies. The Power consumptions of both VCO circuits are about 10 mW. These designs are one of the best phase noises (by means of increasing tank quality factor) reported till now. Also, two phase noise approaches (Time and frequency domain) have been discussed.