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Papers by Fernando Flores

Research paper thumbnail of Elastic postbuckling analysis via finite element and perturbation techniques. Part 1: Formulation

International Journal for Numerical Methods in Engineering, 1992

The main equations for the equilibrium, stability and critical state analysis of discrete elastic... more The main equations for the equilibrium, stability and critical state analysis of discrete elastic systems are presented following the works of Thompson, but in such a way that the original set of generalized coordinates and loads are preserved in the Total Potential Energy. This introduces differences in the resulting equations in bifurcation analysis but does not introduce any new feature regarding the physics of the problem. The new formulation is approximated by means of a standard finite element approach based on interpolation of displacements, in which the derivatives of the potential energy are approximated. The terms retained are those of moderately large rotation theory. The energy analysis is finally related to the more conventional finite element notation in terms of stiffness matrices, and it is shown how in such a way it can be included in present day codes.Part 2 of the paper deals with applications to the analysis of shells of revolution using a semi-analytical approximation. Two cases are presented in detail: bifurcation in axisymmetric and in asymmetric modes, and the results show good correlation with those of other authors. The influence of load and geometric imperfections is evaluated.

Research paper thumbnail of Barrier formation at metal–organic interfaces: dipole formation and the charge neutrality level

Applied Surface Science, 2004

The barrier formation for metal/organic semiconductor interfaces is analyzed within the Induced D... more The barrier formation for metal/organic semiconductor interfaces is analyzed within the Induced Density of Interface States (IDIS) model. Using weak chemisorption theory, we calculate the induced density of states in the organic energy gap and show that it is high enough to control the barrier formation. We calculate the Charge Neutrality Levels of several organic molecules (PTCDA, PTCBI and CBP) and the interface Fermi level for their contact with a Au(111) surface. We find an excellent agreement with the experimental evidence and conclude that the barrier formation is due to the charge transfer between the metal and the states induced in the organic energy gap.

Research paper thumbnail of Barrier formation at metal–organic interfaces: dipole formation and the charge neutrality level

Applied Surface Science, 2004

The barrier formation for metal/organic semiconductor interfaces is analyzed within the Induced D... more The barrier formation for metal/organic semiconductor interfaces is analyzed within the Induced Density of Interface States (IDIS) model. Using weak chemisorption theory, we calculate the induced density of states in the organic energy gap and show that it is high enough to control the barrier formation. We calculate the Charge Neutrality Levels of several organic molecules (PTCDA, PTCBI and CBP) and the interface Fermi level for their contact with a Au(111) surface. We find an excellent agreement with the experimental evidence and conclude that the barrier formation is due to the charge transfer between the metal and the states induced in the organic energy gap.

Research paper thumbnail of Barrier formation at metal–organic interfaces: dipole formation and the charge neutrality level

Applied Surface Science, 2004

The barrier formation for metal/organic semiconductor interfaces is analyzed within the Induced D... more The barrier formation for metal/organic semiconductor interfaces is analyzed within the Induced Density of Interface States (IDIS) model. Using weak chemisorption theory, we calculate the induced density of states in the organic energy gap and show that it is high enough to control the barrier formation. We calculate the Charge Neutrality Levels of several organic molecules (PTCDA, PTCBI and CBP) and the interface Fermi level for their contact with a Au(111) surface. We find an excellent agreement with the experimental evidence and conclude that the barrier formation is due to the charge transfer between the metal and the states induced in the organic energy gap.

Research paper thumbnail of Barrier formation at metal–organic interfaces: dipole formation and the charge neutrality level

Applied Surface Science, 2004

The barrier formation for metal/organic semiconductor interfaces is analyzed within the Induced D... more The barrier formation for metal/organic semiconductor interfaces is analyzed within the Induced Density of Interface States (IDIS) model. Using weak chemisorption theory, we calculate the induced density of states in the organic energy gap and show that it is high enough to control the barrier formation. We calculate the Charge Neutrality Levels of several organic molecules (PTCDA, PTCBI and CBP) and the interface Fermi level for their contact with a Au(111) surface. We find an excellent agreement with the experimental evidence and conclude that the barrier formation is due to the charge transfer between the metal and the states induced in the organic energy gap.

Research paper thumbnail of 1

Research paper thumbnail of Elastic postbuckling analysis via finite element and perturbation techniques. Part 1: Formulation

International Journal for Numerical Methods in Engineering, 1992

The main equations for the equilibrium, stability and critical state analysis of discrete elastic... more The main equations for the equilibrium, stability and critical state analysis of discrete elastic systems are presented following the works of Thompson, but in such a way that the original set of generalized coordinates and loads are preserved in the Total Potential Energy. This introduces differences in the resulting equations in bifurcation analysis but does not introduce any new feature regarding the physics of the problem. The new formulation is approximated by means of a standard finite element approach based on interpolation of displacements, in which the derivatives of the potential energy are approximated. The terms retained are those of moderately large rotation theory. The energy analysis is finally related to the more conventional finite element notation in terms of stiffness matrices, and it is shown how in such a way it can be included in present day codes.Part 2 of the paper deals with applications to the analysis of shells of revolution using a semi-analytical approximation. Two cases are presented in detail: bifurcation in axisymmetric and in asymmetric modes, and the results show good correlation with those of other authors. The influence of load and geometric imperfections is evaluated.

Research paper thumbnail of Barrier formation at metal–organic interfaces: dipole formation and the charge neutrality level

Applied Surface Science, 2004

The barrier formation for metal/organic semiconductor interfaces is analyzed within the Induced D... more The barrier formation for metal/organic semiconductor interfaces is analyzed within the Induced Density of Interface States (IDIS) model. Using weak chemisorption theory, we calculate the induced density of states in the organic energy gap and show that it is high enough to control the barrier formation. We calculate the Charge Neutrality Levels of several organic molecules (PTCDA, PTCBI and CBP) and the interface Fermi level for their contact with a Au(111) surface. We find an excellent agreement with the experimental evidence and conclude that the barrier formation is due to the charge transfer between the metal and the states induced in the organic energy gap.

Research paper thumbnail of Barrier formation at metal–organic interfaces: dipole formation and the charge neutrality level

Applied Surface Science, 2004

The barrier formation for metal/organic semiconductor interfaces is analyzed within the Induced D... more The barrier formation for metal/organic semiconductor interfaces is analyzed within the Induced Density of Interface States (IDIS) model. Using weak chemisorption theory, we calculate the induced density of states in the organic energy gap and show that it is high enough to control the barrier formation. We calculate the Charge Neutrality Levels of several organic molecules (PTCDA, PTCBI and CBP) and the interface Fermi level for their contact with a Au(111) surface. We find an excellent agreement with the experimental evidence and conclude that the barrier formation is due to the charge transfer between the metal and the states induced in the organic energy gap.

Research paper thumbnail of Barrier formation at metal–organic interfaces: dipole formation and the charge neutrality level

Applied Surface Science, 2004

The barrier formation for metal/organic semiconductor interfaces is analyzed within the Induced D... more The barrier formation for metal/organic semiconductor interfaces is analyzed within the Induced Density of Interface States (IDIS) model. Using weak chemisorption theory, we calculate the induced density of states in the organic energy gap and show that it is high enough to control the barrier formation. We calculate the Charge Neutrality Levels of several organic molecules (PTCDA, PTCBI and CBP) and the interface Fermi level for their contact with a Au(111) surface. We find an excellent agreement with the experimental evidence and conclude that the barrier formation is due to the charge transfer between the metal and the states induced in the organic energy gap.

Research paper thumbnail of Barrier formation at metal–organic interfaces: dipole formation and the charge neutrality level

Applied Surface Science, 2004

The barrier formation for metal/organic semiconductor interfaces is analyzed within the Induced D... more The barrier formation for metal/organic semiconductor interfaces is analyzed within the Induced Density of Interface States (IDIS) model. Using weak chemisorption theory, we calculate the induced density of states in the organic energy gap and show that it is high enough to control the barrier formation. We calculate the Charge Neutrality Levels of several organic molecules (PTCDA, PTCBI and CBP) and the interface Fermi level for their contact with a Au(111) surface. We find an excellent agreement with the experimental evidence and conclude that the barrier formation is due to the charge transfer between the metal and the states induced in the organic energy gap.

Research paper thumbnail of 1