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G Jernigan

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Papers by G Jernigan

Research paper thumbnail of The Formation of Abrupt N+ Doping Profiles Using Atomic Hydrogen and Sb During Si MBE

MRS Proceedings, 1998

Previously, atomic hydrogen has been shown to be effective in reducing the segregation of Sb on S... more Previously, atomic hydrogen has been shown to be effective in reducing the segregation of Sb on Si(100) during solid source molecular beam epitaxy growth. In this work we have investigated the electrical activation of the Sb. Using Hall measurements, spreading resistance profilometry, and secondary ion mass spectrometry, we have demonstrated that the co-deposition of atomic hydrogen during Sb doping of Si at 500°C produced well-defined doping spikes. Comparing the sheet carrier concentration obtained by Hall measurements to the Sb atomic concentration obtained by SIMS, the overall activation of the Sb was greater than 50%.

Research paper thumbnail of Self-aligned graphene-on-SiC and graphene-on-Si MOSFETs on 75 mm wafers

68th Device Research Conference, 2010

In this talk, we present recent progress in epitaxial graphene n-MOSFETs and p-MOSFETs on both Si... more In this talk, we present recent progress in epitaxial graphene n-MOSFETs and p-MOSFETs on both SiC and Si substrates for graphene-on-SiC and graphene-on-Si technologies. Both graphene MOSFETs were fabricated in a self-aligned manner on 75 mm wafers and exhibited gate-controlled ambipolar characteristics. For the graphene MOSFETs on SiC substrates, the graphene was grown by Si-sublimation of Si-face 6H-SiC substrates in

Research paper thumbnail of Atomic Foundation for RHEED Oscillations an STM Study of Si Deposited on Si (100)

Research paper thumbnail of Boron incorporation with and without atomic hydrogen during the growth of doped layers on Si(100)

Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 1998

Solid source molecular beam epitaxy Si growths were done with and without atomic hydrogen (AH) to... more Solid source molecular beam epitaxy Si growths were done with and without atomic hydrogen (AH) to investigate the impact of AH on B segregation and activation. A series of 3 or 50 nm thick B-doped Si layers separated by 200 nm of undoped Si were grown at 0.1 nm/s on Si(100) substrates. In separate experiments, 10−4 Pa of AH was applied after (at 500, 600, and 710 °C) or during (at 710 °C) the 3 nm B-doped layer to determine if AH affected segregation. AH was applied before the 50 nm B-doped layer to observe if AH increased B activation between 600 and 800 °C. It was found that application of AH after the growth of the 3 nm B-doped layer had no effect on B segregation through 600 °C and increased B segregation at 710 °C, as measured by secondary ion mass spectrometry (SIMS). Application of AH during B-doped Si layer growth had no effect on B segregation. Application of 10−3 Pa of AH for 100 s prior to growth of the 50 nm B-doped layer improved surface order, as measured by low energy...

Research paper thumbnail of Epitaxial-Graphene RF Field-Effect Transistors on Si-Face 6H-SiC Substrates

IEEE Electron Device Letters, 2009

Research paper thumbnail of Fluorine functionalization of epitaxial graphene for uniform deposition of thin high-κ dielectrics

Research paper thumbnail of Growth at the Atomic Scale: Si-based RITDs

Research paper thumbnail of Chemical sensing with ultra-thin MoS2

Research paper thumbnail of Atomic hydrogen for the formation of abrupt Sb doping profiles in MBE-grown Si

Thin Solid Films, 1998

Previously, atomic hydrogen has been shown to be effective in reducing the segregation of Ge on S... more Previously, atomic hydrogen has been shown to be effective in reducing the segregation of Ge on Si(100) during solid source molecular beam epitaxy growth. In this work we have investigated atomic hydrogen to determine if it is equally effective in reducing the segregation of Sb on Si(100). Using secondary ion mass spectrometry, we demonstrated that the co-deposition of atomic hydrogen during Sb doping of Si at 500°C reduced the surface segregation ratio by greater than two orders of magnitude. However, if atomic hydrogen was applied for more than 20 nm of growth, extended defects were formed. In addition, the as-grown Sb-doped layers had a low percentage of electrical activation as measured by capacitance-voltage profiling.

Research paper thumbnail of The Formation of Abrupt N+ Doping Profiles Using Atomic Hydrogen and Sb During Si MBE

MRS Proceedings, 1998

Previously, atomic hydrogen has been shown to be effective in reducing the segregation of Sb on S... more Previously, atomic hydrogen has been shown to be effective in reducing the segregation of Sb on Si(100) during solid source molecular beam epitaxy growth. In this work we have investigated the electrical activation of the Sb. Using Hall measurements, spreading resistance profilometry, and secondary ion mass spectrometry, we have demonstrated that the co-deposition of atomic hydrogen during Sb doping of Si at 500°C produced well-defined doping spikes. Comparing the sheet carrier concentration obtained by Hall measurements to the Sb atomic concentration obtained by SIMS, the overall activation of the Sb was greater than 50%.

Research paper thumbnail of Self-aligned graphene-on-SiC and graphene-on-Si MOSFETs on 75 mm wafers

68th Device Research Conference, 2010

In this talk, we present recent progress in epitaxial graphene n-MOSFETs and p-MOSFETs on both Si... more In this talk, we present recent progress in epitaxial graphene n-MOSFETs and p-MOSFETs on both SiC and Si substrates for graphene-on-SiC and graphene-on-Si technologies. Both graphene MOSFETs were fabricated in a self-aligned manner on 75 mm wafers and exhibited gate-controlled ambipolar characteristics. For the graphene MOSFETs on SiC substrates, the graphene was grown by Si-sublimation of Si-face 6H-SiC substrates in

Research paper thumbnail of Atomic Foundation for RHEED Oscillations an STM Study of Si Deposited on Si (100)

Research paper thumbnail of Boron incorporation with and without atomic hydrogen during the growth of doped layers on Si(100)

Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 1998

Solid source molecular beam epitaxy Si growths were done with and without atomic hydrogen (AH) to... more Solid source molecular beam epitaxy Si growths were done with and without atomic hydrogen (AH) to investigate the impact of AH on B segregation and activation. A series of 3 or 50 nm thick B-doped Si layers separated by 200 nm of undoped Si were grown at 0.1 nm/s on Si(100) substrates. In separate experiments, 10−4 Pa of AH was applied after (at 500, 600, and 710 °C) or during (at 710 °C) the 3 nm B-doped layer to determine if AH affected segregation. AH was applied before the 50 nm B-doped layer to observe if AH increased B activation between 600 and 800 °C. It was found that application of AH after the growth of the 3 nm B-doped layer had no effect on B segregation through 600 °C and increased B segregation at 710 °C, as measured by secondary ion mass spectrometry (SIMS). Application of AH during B-doped Si layer growth had no effect on B segregation. Application of 10−3 Pa of AH for 100 s prior to growth of the 50 nm B-doped layer improved surface order, as measured by low energy...

Research paper thumbnail of Epitaxial-Graphene RF Field-Effect Transistors on Si-Face 6H-SiC Substrates

IEEE Electron Device Letters, 2009

Research paper thumbnail of Fluorine functionalization of epitaxial graphene for uniform deposition of thin high-κ dielectrics

Research paper thumbnail of Growth at the Atomic Scale: Si-based RITDs

Research paper thumbnail of Chemical sensing with ultra-thin MoS2

Research paper thumbnail of Atomic hydrogen for the formation of abrupt Sb doping profiles in MBE-grown Si

Thin Solid Films, 1998

Previously, atomic hydrogen has been shown to be effective in reducing the segregation of Ge on S... more Previously, atomic hydrogen has been shown to be effective in reducing the segregation of Ge on Si(100) during solid source molecular beam epitaxy growth. In this work we have investigated atomic hydrogen to determine if it is equally effective in reducing the segregation of Sb on Si(100). Using secondary ion mass spectrometry, we demonstrated that the co-deposition of atomic hydrogen during Sb doping of Si at 500°C reduced the surface segregation ratio by greater than two orders of magnitude. However, if atomic hydrogen was applied for more than 20 nm of growth, extended defects were formed. In addition, the as-grown Sb-doped layers had a low percentage of electrical activation as measured by capacitance-voltage profiling.

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