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Papers by Gaurav Shrivastav

Research paper thumbnail of Performance optimization of 60 nm channel length vertical MOSFETs using channel engineering

VLSI Design 2001. Fourteenth International Conference on VLSI Design, 2001

A comprehensive study has been performed to optimize the electrical characteristics of delta dope... more A comprehensive study has been performed to optimize the electrical characteristics of delta doped channel MOSFETs (D'FETs) having channel length of 60 nm. Extensive 2D device simulations have been employed to show that D2FETs exhibit higher drain current drive and reduced short channel and hot carrier effects compared to MOSFETs having uniform channel doping. The improvement has been found significant when the delta peak is shifted near the source end of the channel. Device simulations show acceptable short channel effects for 60 nm D2FETs when the gate oxide thickness is reduced to the 2.5-3 nm regime.

Research paper thumbnail of A Computationally Efficient Model for Three-dimensional Monte Carlo Simulation of Ion Implantation into Complex Structures

Simulation of Semiconductor Processes and Devices 2001, 2001

A new three-dimensional Monte Carlo simulator has been developed based on UT-MARLOWE. Unbalanced ... more A new three-dimensional Monte Carlo simulator has been developed based on UT-MARLOWE. Unbalanced Octree algorithm was used for spatial decomposition. A new trajectory replication scheme was developed and implemented to enhance computational efficiency. More than two orders of magnitude savings on CPU time have been achieved.

Research paper thumbnail of erformance Optimization Of 60 Nm Channel Length Vertical Mosfets Using Channel Engineering

A comprehensive study has been performed to optimize the electrical characteristics of delta dope... more A comprehensive study has been performed to optimize the electrical characteristics of delta doped channel MOSFETs (D2FETs) having channel length of 60 nm. Extensive 2D device simulations have been employed to show that D2FETs exhibit higher drain current drive and reduced short channel and hot carrier effects compared to MOSFETs having uniform channel doping. The improvement has been found significant when the delta peak is shifted near the source end of the channel. Device simulations show acceptable short channel effects for 60 nm D2FETs when the gate oxide thickness is reduced to the 2.5-3 nm regime

Research paper thumbnail of A computationally efficient simulator for three-dimensional Monte Carlo simulation of ion implantation into complex structures

Nuclear Instruments & Methods in Physics Research Section B-beam Interactions With Materials and Atoms, 2001

A physically-based three-dimensional Monte Carlo simulator has been developed within UT-MARLOWE, ... more A physically-based three-dimensional Monte Carlo simulator has been developed within UT-MARLOWE, which is capable of simulating ion implantation into multi-material systems and arbitrary topography. Introducing the third dimension can result in a severe CPU time penalty. In order to minimize this penalty, a three-dimensional trajectory replication algorithm has been developed, implemented and verified. More than two orders of magnitude savings of CPU time have been observed. An unbalanced Octree structure was used to decompose three-dimensional structures. It effectively simplifies the structure, offers a good balance between modeling accuracy and computational efficiency, and allows arbitrary precision of mapping the Octree onto desired structure. Using the well-established and validated physical models in UT-MARLOWE 5.0, this simulator has been extensively verified by comparing the integrated one-dimensional simulation results with secondary ion mass spectroscopy (SIMS). Two options, the typical case and the worst scenario, have been selected to simulate ion implantation into poly-silicon under various scenarios using this simulator: implantation into a random, amorphous network, and implantation into the worst-case channeling condition, into (110) orientated wafers.

Research paper thumbnail of A Computationally Efficient Simulator for Three-Dimensional Monte Carlo Simulation of Ion Implantation into Complex Structures

Journal of Computational Electronics, 2002

A physically-based 3-dimensional Monte-Carlo simulator has been developed based on the program UT... more A physically-based 3-dimensional Monte-Carlo simulator has been developed based on the program UT-MARLOWE which is capable of simulating ion implantation into multi-material systems and arbitrary topography. Introducing the third dimension can result in a severe CPU time penalty. In order to minimize this penalty, a three-dimensional trajectory replication algorithm has been developed, implemented and verified. More than two orders of magnitude savings of CPU time have been observed. An unbalanced Octree structure was used to decompose three-dimensional structures. It effectively simplifies the structure, offers a good balance between modeling accuracy and computational efficiency, and allows arbitrary precision of mapping the Octree onto desired structures. Using the well-established and validated physical models in UT-MARLOWE, this simulator has been extensively verified by comparing the integrated one-dimensional simulation results with Secondary Ion Mass Spectroscopy (SIMS). Two options, the typical case and the worst scenario, have been selected to simulate ion implantation into poly-silicon under various scenarios using this simulator: implantation into a random, amorphous network, and implantation into the worst-case channeling condition, into (110) orientated wafers.

Research paper thumbnail of An Analytical 1-D Model for Ion Implantation of Any Species into Single-Crystal Silicon Based on Legendre Polynomials

Journal of Computational Electronics, 2002

A computationally-efficient 1-D analytical model for ion implantation of any species into single ... more A computationally-efficient 1-D analytical model for ion implantation of any species into single crystal silicon is presented. By interpolating between a few species, the model can predict as-implanted profiles for all the other species. The model uses Legendre polynomials as basis functions. The results of the model are in good agreement with UT-MARLOWE, which is a physically-based and experimentally verified Monte Carlo simulator.

Research paper thumbnail of Monte Carlo simulation of ion implantation (3-dimensional) and defect modeling during implantation process

Abstract In this paper, we report a new computationally efficient three-dimensional Monte Carlo s... more Abstract In this paper, we report a new computationally efficient three-dimensional Monte Carlo simulator for ion implantation into topographically complex structures. Significant improvement of CPU time over previous simulators has been achieved. Both the Kinchin-...

Research paper thumbnail of A universal ion implantation model for all species into single-crystal silicon

IEEE Transactions on Electron Devices, 2002

A physically based model for ion implantation of any species into single crystal silicon has been... more A physically based model for ion implantation of any species into single crystal silicon has been developed, tested and implemented in the ion implant simulator, UT-MARLOWE. In this model, an interpolation scheme, based on mathematical properties of ion-target interatomic potential, was employed and implemented to calculate the scattering process. Using this scheme, the resulting energy, direction and momentum of the ion and target can be derived from the existing scattering tables of UT-MARLOWE without calculating the entire scattering process. The method has advantages in terms of both accuracy and computational efficiency, as well as significantly reduced cost of code development. The impurity profiles and damage profiles predicted by the model simulations have been compared with secondary ion mass spectroscopy (SIMS) and Rutherford backscattering spectrometry (RBS), and excellent agreement with experimental data has been achieved.

Research paper thumbnail of Quantum Mechanical Model of Electronic Stopping Power for Ions in a Free Electron Gas

Journal of Computational Electronics, 2002

The electronic stopping power of a free electron gas on a moving charged particle (ion) in a soli... more The electronic stopping power of a free electron gas on a moving charged particle (ion) in a solid is analyzed in the coordinate system moving with the charged particle. By quantum mechanically treating the momentum transfer between the charged particle and the electron gas, explicit analytic expressions for electronic stopping have been derived for ions of all energies in the nonrelativistic regime. The explicit result reduces to well-known results at both high and low ion energies.

Research paper thumbnail of Accurate and computationally efficient analytical 1-D and 2-D ion implantation models based on Legendre polynomials

IEEE Transactions on Electron Devices, 2002

Abstract Computationally efficient ion implantation modeling has become the essential tool for ef... more Abstract Computationally efficient ion implantation modeling has become the essential tool for efficient and accurate CMOS design as aggressive scaling of devices continues. Specifically, computationally efficient two-dimensional (2-D) analytical models are often ...

Research paper thumbnail of Performance optimization of 60 nm channel length vertical MOSFETs using channel engineering

VLSI Design 2001. Fourteenth International Conference on VLSI Design, 2001

A comprehensive study has been performed to optimize the electrical characteristics of delta dope... more A comprehensive study has been performed to optimize the electrical characteristics of delta doped channel MOSFETs (D'FETs) having channel length of 60 nm. Extensive 2D device simulations have been employed to show that D2FETs exhibit higher drain current drive and reduced short channel and hot carrier effects compared to MOSFETs having uniform channel doping. The improvement has been found significant when the delta peak is shifted near the source end of the channel. Device simulations show acceptable short channel effects for 60 nm D2FETs when the gate oxide thickness is reduced to the 2.5-3 nm regime.

Research paper thumbnail of A Computationally Efficient Model for Three-dimensional Monte Carlo Simulation of Ion Implantation into Complex Structures

Simulation of Semiconductor Processes and Devices 2001, 2001

A new three-dimensional Monte Carlo simulator has been developed based on UT-MARLOWE. Unbalanced ... more A new three-dimensional Monte Carlo simulator has been developed based on UT-MARLOWE. Unbalanced Octree algorithm was used for spatial decomposition. A new trajectory replication scheme was developed and implemented to enhance computational efficiency. More than two orders of magnitude savings on CPU time have been achieved.

Research paper thumbnail of erformance Optimization Of 60 Nm Channel Length Vertical Mosfets Using Channel Engineering

A comprehensive study has been performed to optimize the electrical characteristics of delta dope... more A comprehensive study has been performed to optimize the electrical characteristics of delta doped channel MOSFETs (D2FETs) having channel length of 60 nm. Extensive 2D device simulations have been employed to show that D2FETs exhibit higher drain current drive and reduced short channel and hot carrier effects compared to MOSFETs having uniform channel doping. The improvement has been found significant when the delta peak is shifted near the source end of the channel. Device simulations show acceptable short channel effects for 60 nm D2FETs when the gate oxide thickness is reduced to the 2.5-3 nm regime

Research paper thumbnail of A computationally efficient simulator for three-dimensional Monte Carlo simulation of ion implantation into complex structures

Nuclear Instruments & Methods in Physics Research Section B-beam Interactions With Materials and Atoms, 2001

A physically-based three-dimensional Monte Carlo simulator has been developed within UT-MARLOWE, ... more A physically-based three-dimensional Monte Carlo simulator has been developed within UT-MARLOWE, which is capable of simulating ion implantation into multi-material systems and arbitrary topography. Introducing the third dimension can result in a severe CPU time penalty. In order to minimize this penalty, a three-dimensional trajectory replication algorithm has been developed, implemented and verified. More than two orders of magnitude savings of CPU time have been observed. An unbalanced Octree structure was used to decompose three-dimensional structures. It effectively simplifies the structure, offers a good balance between modeling accuracy and computational efficiency, and allows arbitrary precision of mapping the Octree onto desired structure. Using the well-established and validated physical models in UT-MARLOWE 5.0, this simulator has been extensively verified by comparing the integrated one-dimensional simulation results with secondary ion mass spectroscopy (SIMS). Two options, the typical case and the worst scenario, have been selected to simulate ion implantation into poly-silicon under various scenarios using this simulator: implantation into a random, amorphous network, and implantation into the worst-case channeling condition, into (110) orientated wafers.

Research paper thumbnail of A Computationally Efficient Simulator for Three-Dimensional Monte Carlo Simulation of Ion Implantation into Complex Structures

Journal of Computational Electronics, 2002

A physically-based 3-dimensional Monte-Carlo simulator has been developed based on the program UT... more A physically-based 3-dimensional Monte-Carlo simulator has been developed based on the program UT-MARLOWE which is capable of simulating ion implantation into multi-material systems and arbitrary topography. Introducing the third dimension can result in a severe CPU time penalty. In order to minimize this penalty, a three-dimensional trajectory replication algorithm has been developed, implemented and verified. More than two orders of magnitude savings of CPU time have been observed. An unbalanced Octree structure was used to decompose three-dimensional structures. It effectively simplifies the structure, offers a good balance between modeling accuracy and computational efficiency, and allows arbitrary precision of mapping the Octree onto desired structures. Using the well-established and validated physical models in UT-MARLOWE, this simulator has been extensively verified by comparing the integrated one-dimensional simulation results with Secondary Ion Mass Spectroscopy (SIMS). Two options, the typical case and the worst scenario, have been selected to simulate ion implantation into poly-silicon under various scenarios using this simulator: implantation into a random, amorphous network, and implantation into the worst-case channeling condition, into (110) orientated wafers.

Research paper thumbnail of An Analytical 1-D Model for Ion Implantation of Any Species into Single-Crystal Silicon Based on Legendre Polynomials

Journal of Computational Electronics, 2002

A computationally-efficient 1-D analytical model for ion implantation of any species into single ... more A computationally-efficient 1-D analytical model for ion implantation of any species into single crystal silicon is presented. By interpolating between a few species, the model can predict as-implanted profiles for all the other species. The model uses Legendre polynomials as basis functions. The results of the model are in good agreement with UT-MARLOWE, which is a physically-based and experimentally verified Monte Carlo simulator.

Research paper thumbnail of Monte Carlo simulation of ion implantation (3-dimensional) and defect modeling during implantation process

Abstract In this paper, we report a new computationally efficient three-dimensional Monte Carlo s... more Abstract In this paper, we report a new computationally efficient three-dimensional Monte Carlo simulator for ion implantation into topographically complex structures. Significant improvement of CPU time over previous simulators has been achieved. Both the Kinchin-...

Research paper thumbnail of A universal ion implantation model for all species into single-crystal silicon

IEEE Transactions on Electron Devices, 2002

A physically based model for ion implantation of any species into single crystal silicon has been... more A physically based model for ion implantation of any species into single crystal silicon has been developed, tested and implemented in the ion implant simulator, UT-MARLOWE. In this model, an interpolation scheme, based on mathematical properties of ion-target interatomic potential, was employed and implemented to calculate the scattering process. Using this scheme, the resulting energy, direction and momentum of the ion and target can be derived from the existing scattering tables of UT-MARLOWE without calculating the entire scattering process. The method has advantages in terms of both accuracy and computational efficiency, as well as significantly reduced cost of code development. The impurity profiles and damage profiles predicted by the model simulations have been compared with secondary ion mass spectroscopy (SIMS) and Rutherford backscattering spectrometry (RBS), and excellent agreement with experimental data has been achieved.

Research paper thumbnail of Quantum Mechanical Model of Electronic Stopping Power for Ions in a Free Electron Gas

Journal of Computational Electronics, 2002

The electronic stopping power of a free electron gas on a moving charged particle (ion) in a soli... more The electronic stopping power of a free electron gas on a moving charged particle (ion) in a solid is analyzed in the coordinate system moving with the charged particle. By quantum mechanically treating the momentum transfer between the charged particle and the electron gas, explicit analytic expressions for electronic stopping have been derived for ions of all energies in the nonrelativistic regime. The explicit result reduces to well-known results at both high and low ion energies.

Research paper thumbnail of Accurate and computationally efficient analytical 1-D and 2-D ion implantation models based on Legendre polynomials

IEEE Transactions on Electron Devices, 2002

Abstract Computationally efficient ion implantation modeling has become the essential tool for ef... more Abstract Computationally efficient ion implantation modeling has become the essential tool for efficient and accurate CMOS design as aggressive scaling of devices continues. Specifically, computationally efficient two-dimensional (2-D) analytical models are often ...