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Papers by Gottfried Strasser

Research paper thumbnail of Polarization dependence of photocurrent in quantum-dot infrared photodetectors

AIP Conference Proceedings, 2007

Research paper thumbnail of Mid-Infrared Ring Interband Cascade Laser: Operation at the Standard Quantum Limit

arXiv (Cornell University), Jun 20, 2023

Research paper thumbnail of Magnetic modulation of THz quantum cascade lasers

Infrared and Millimeter Waves, Conference Digest of the 2004 Joint 29th International Conference on 2004 and 12th International Conference on Terahertz Electronics, 2004.

We report on the influence of a quantizing magnetic field on a THz quantum cascade laser. The mag... more We report on the influence of a quantizing magnetic field on a THz quantum cascade laser. The magnetic field splits the subbands into sets of discrete Landau levels, which reduces the phase space for scattering and relaxation. A dramatic enhancement of the laser performance is achieved.

Research paper thumbnail of Photonic crystals with a complete bandgap for TM-modes used as resonators for terahertz quantum-cascade lasers

2007 European Conference on Lasers and Electro-Optics and the International Quantum Electronics Conference, 2007

The integration of photonic crystals (PC) and quantum-cascade lasers (QCL) can lead to a powerful... more The integration of photonic crystals (PC) and quantum-cascade lasers (QCL) can lead to a powerful set of new devices for various applications, such as multi-wavelength laser, detector arrays, on-chip integration and spectroscopy. The PCs are artificial crystals that have allowed and forbidden bands for the propagation of light. Typically PCs are built up by a regular pattern of air holes

Research paper thumbnail of THz emission of coherent plasmons in semiconductor superlattices

Technical Digest. Summaries of Papers Presented at the Quantum Electronics and Laser Science Conference

Summary form only given. Ultrafast excitation of n-doped GaAs layers leads to THz emission from c... more Summary form only given. Ultrafast excitation of n-doped GaAs layers leads to THz emission from coherent plasma oscillations. The emission frequency of this THz source is given by the simple plasma frequency formula ωp=(ne2/m*ε)1/2 where n is the number of extrinsic electrons which are confined between the surface depletion field and the GaAs substrate. The desired frequency can be controlled

Research paper thumbnail of Surface emission of intracavity frequency-doubled light from quantum cascade lasers

2006 Conference on Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference, 2006

We report second-harmonic generation in GaAs-based quantum cascade lasers due to intersubband non... more We report second-harmonic generation in GaAs-based quantum cascade lasers due to intersubband nonlinearities. Using a distributed feedback grating we obtain single-mode second-harmonic surface emission, where no fundamental light is emitted via the surface.

Research paper thumbnail of Comparison of MOS and Schottky-barrier structure in AlGaN/GaN HEMTs

Research paper thumbnail of Broadband single-mode emission from two-dimensional ring cavity surface emitting quantum cascade laser arrays

Research paper thumbnail of Ring resonator-based surface emitting quantum cascade lasers

Proceedings of the SPIE - The International Society for Optical Engineering, 2010

We describe the design, simulation, fabrication and operation of ring cavity surface emitting las... more We describe the design, simulation, fabrication and operation of ring cavity surface emitting lasers (RCSEL) based on quantum cascade structures for the midinfrared (MIR) and terahertz (THz) spectral range. MIR RCSELs facilitate an enhancement of optical power and a reduction in threshold current density, as compared to Fabry-Perot (FP) lasers. In continuous wave operation the maximum temperature of ring based

Research paper thumbnail of Gating of Light- Matter Interaction in Quantum Cascade Lasers with 10 fs Time Resolution

2010 Ieee Photonics Society Winter Topicals Meeting Series, 2010

Research paper thumbnail of Ballistic electron mean free path of titanylphthalocyanine films grown on GaAs

physica status solidi c, 2008

In this article, Au/titanylphthalocyanine/n‐GaAs diodes incorporating ultrathin films of the arch... more In this article, Au/titanylphthalocyanine/n‐GaAs diodes incorporating ultrathin films of the archetypal organic semiconductor titanylphthalocyanine were investigated by ballistic electron emission microscopy/spectroscopy (BEEM/S). BEEM/S measurements were used to determine the transmission of ballistic electrons through titanylphthalocyanine as a function of energy and temperature. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

Research paper thumbnail of GaAs/AlGaAs microresonator quantum cascade lasers

Physica E: Low-dimensional Systems and Nanostructures, 2000

Research paper thumbnail of Ballistic Electron Emission Microscopy on buried GaAsAlGaAs superlattices

Microelectronic Engineering, 1999

Research paper thumbnail of Insulator, semiclassical oscillations and quantum Hall liquids at low magnetic fields

Journal of Physics: Condensed Matter, 2012

Research paper thumbnail of Observations of interaction-assisted hopping transport in GaAs/Ga1−xAlxAs quantum wells

Journal of Luminescence, 2000

Research paper thumbnail of Improving size distribution of InAs quantum dots for intersubband devices

Journal of Crystal Growth, 2009

We present the growth and characterization of InAs quantum dots on AlxGa1−xAs surfaces for inters... more We present the growth and characterization of InAs quantum dots on AlxGa1−xAs surfaces for intersubband devices. This requires the quantum dot energy levels in the AlxGa1−xAs matrix to be above the GaAs bandedge. Using standard As4 fluxes (beam equivalent pressure 8e−6Torr), inhomogeneous broadening of the quantum dot size distribution increases with increasing Al content in the AlxGa1−xAs matrix. Reducing the

Research paper thumbnail of THz quantum Hall conductivity in a two dimensional electron gas

Research paper thumbnail of K??=0 Filtering Effects in Ballistic Electron Transport Through Sub-Surface Resonant Tunneling Diodes

Physica B: Condensed Matter, 1999

Research paper thumbnail of Transition between coherent to incoherent superlattices transport

International Conference on Advanced Semiconductor Devices and Microsystems, 1998

Ballistic electron transport is used to study the transmittance of GaAs/GaAlAs superlattice. In a... more Ballistic electron transport is used to study the transmittance of GaAs/GaAlAs superlattice. In a three terminal transistor type devices an energy tunable electron beam is injected via a tunneling barrier into an undoped superlattice. The transmitted current is measured as function of the injector energy. Resonance in the collector current are observed due to miniband conduction in the GaAs/AlGaAs superlattice.

Research paper thumbnail of Terahertz quantum cascade laser in the InGaAs/GaAsSb material system

35th International Conference on Infrared, Millimeter, and Terahertz Waves, 2010

ABSTRACT We demonstrate a terahertz quantum cascade laser based on the aluminum-free In0.53Ga0.47... more ABSTRACT We demonstrate a terahertz quantum cascade laser based on the aluminum-free In0.53Ga0.47As/GaAs0.51Sb0.49 material system. Processed in a double metal waveguide configuration, disk devices reach operating temperatures up to 105 K and the spectral emission lies between 3.6 and 4.1 THz.

Research paper thumbnail of Polarization dependence of photocurrent in quantum-dot infrared photodetectors

AIP Conference Proceedings, 2007

Research paper thumbnail of Mid-Infrared Ring Interband Cascade Laser: Operation at the Standard Quantum Limit

arXiv (Cornell University), Jun 20, 2023

Research paper thumbnail of Magnetic modulation of THz quantum cascade lasers

Infrared and Millimeter Waves, Conference Digest of the 2004 Joint 29th International Conference on 2004 and 12th International Conference on Terahertz Electronics, 2004.

We report on the influence of a quantizing magnetic field on a THz quantum cascade laser. The mag... more We report on the influence of a quantizing magnetic field on a THz quantum cascade laser. The magnetic field splits the subbands into sets of discrete Landau levels, which reduces the phase space for scattering and relaxation. A dramatic enhancement of the laser performance is achieved.

Research paper thumbnail of Photonic crystals with a complete bandgap for TM-modes used as resonators for terahertz quantum-cascade lasers

2007 European Conference on Lasers and Electro-Optics and the International Quantum Electronics Conference, 2007

The integration of photonic crystals (PC) and quantum-cascade lasers (QCL) can lead to a powerful... more The integration of photonic crystals (PC) and quantum-cascade lasers (QCL) can lead to a powerful set of new devices for various applications, such as multi-wavelength laser, detector arrays, on-chip integration and spectroscopy. The PCs are artificial crystals that have allowed and forbidden bands for the propagation of light. Typically PCs are built up by a regular pattern of air holes

Research paper thumbnail of THz emission of coherent plasmons in semiconductor superlattices

Technical Digest. Summaries of Papers Presented at the Quantum Electronics and Laser Science Conference

Summary form only given. Ultrafast excitation of n-doped GaAs layers leads to THz emission from c... more Summary form only given. Ultrafast excitation of n-doped GaAs layers leads to THz emission from coherent plasma oscillations. The emission frequency of this THz source is given by the simple plasma frequency formula ωp=(ne2/m*ε)1/2 where n is the number of extrinsic electrons which are confined between the surface depletion field and the GaAs substrate. The desired frequency can be controlled

Research paper thumbnail of Surface emission of intracavity frequency-doubled light from quantum cascade lasers

2006 Conference on Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference, 2006

We report second-harmonic generation in GaAs-based quantum cascade lasers due to intersubband non... more We report second-harmonic generation in GaAs-based quantum cascade lasers due to intersubband nonlinearities. Using a distributed feedback grating we obtain single-mode second-harmonic surface emission, where no fundamental light is emitted via the surface.

Research paper thumbnail of Comparison of MOS and Schottky-barrier structure in AlGaN/GaN HEMTs

Research paper thumbnail of Broadband single-mode emission from two-dimensional ring cavity surface emitting quantum cascade laser arrays

Research paper thumbnail of Ring resonator-based surface emitting quantum cascade lasers

Proceedings of the SPIE - The International Society for Optical Engineering, 2010

We describe the design, simulation, fabrication and operation of ring cavity surface emitting las... more We describe the design, simulation, fabrication and operation of ring cavity surface emitting lasers (RCSEL) based on quantum cascade structures for the midinfrared (MIR) and terahertz (THz) spectral range. MIR RCSELs facilitate an enhancement of optical power and a reduction in threshold current density, as compared to Fabry-Perot (FP) lasers. In continuous wave operation the maximum temperature of ring based

Research paper thumbnail of Gating of Light- Matter Interaction in Quantum Cascade Lasers with 10 fs Time Resolution

2010 Ieee Photonics Society Winter Topicals Meeting Series, 2010

Research paper thumbnail of Ballistic electron mean free path of titanylphthalocyanine films grown on GaAs

physica status solidi c, 2008

In this article, Au/titanylphthalocyanine/n‐GaAs diodes incorporating ultrathin films of the arch... more In this article, Au/titanylphthalocyanine/n‐GaAs diodes incorporating ultrathin films of the archetypal organic semiconductor titanylphthalocyanine were investigated by ballistic electron emission microscopy/spectroscopy (BEEM/S). BEEM/S measurements were used to determine the transmission of ballistic electrons through titanylphthalocyanine as a function of energy and temperature. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

Research paper thumbnail of GaAs/AlGaAs microresonator quantum cascade lasers

Physica E: Low-dimensional Systems and Nanostructures, 2000

Research paper thumbnail of Ballistic Electron Emission Microscopy on buried GaAsAlGaAs superlattices

Microelectronic Engineering, 1999

Research paper thumbnail of Insulator, semiclassical oscillations and quantum Hall liquids at low magnetic fields

Journal of Physics: Condensed Matter, 2012

Research paper thumbnail of Observations of interaction-assisted hopping transport in GaAs/Ga1−xAlxAs quantum wells

Journal of Luminescence, 2000

Research paper thumbnail of Improving size distribution of InAs quantum dots for intersubband devices

Journal of Crystal Growth, 2009

We present the growth and characterization of InAs quantum dots on AlxGa1−xAs surfaces for inters... more We present the growth and characterization of InAs quantum dots on AlxGa1−xAs surfaces for intersubband devices. This requires the quantum dot energy levels in the AlxGa1−xAs matrix to be above the GaAs bandedge. Using standard As4 fluxes (beam equivalent pressure 8e−6Torr), inhomogeneous broadening of the quantum dot size distribution increases with increasing Al content in the AlxGa1−xAs matrix. Reducing the

Research paper thumbnail of THz quantum Hall conductivity in a two dimensional electron gas

Research paper thumbnail of K??=0 Filtering Effects in Ballistic Electron Transport Through Sub-Surface Resonant Tunneling Diodes

Physica B: Condensed Matter, 1999

Research paper thumbnail of Transition between coherent to incoherent superlattices transport

International Conference on Advanced Semiconductor Devices and Microsystems, 1998

Ballistic electron transport is used to study the transmittance of GaAs/GaAlAs superlattice. In a... more Ballistic electron transport is used to study the transmittance of GaAs/GaAlAs superlattice. In a three terminal transistor type devices an energy tunable electron beam is injected via a tunneling barrier into an undoped superlattice. The transmitted current is measured as function of the injector energy. Resonance in the collector current are observed due to miniband conduction in the GaAs/AlGaAs superlattice.

Research paper thumbnail of Terahertz quantum cascade laser in the InGaAs/GaAsSb material system

35th International Conference on Infrared, Millimeter, and Terahertz Waves, 2010

ABSTRACT We demonstrate a terahertz quantum cascade laser based on the aluminum-free In0.53Ga0.47... more ABSTRACT We demonstrate a terahertz quantum cascade laser based on the aluminum-free In0.53Ga0.47As/GaAs0.51Sb0.49 material system. Processed in a double metal waveguide configuration, disk devices reach operating temperatures up to 105 K and the spectral emission lies between 3.6 and 4.1 THz.