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Papers by Guillaume Hubert

Research paper thumbnail of A generic platform for remote accelerated tests and high altitude SEU experiments on advanced ICs: Correlation with MUSCA SEP3 calculations

2009 15th IEEE International On-Line Testing Symposium, 2009

The goal of this work is to confront SER predictions done with MUSCA SEP3 to measures performed a... more The goal of this work is to confront SER predictions done with MUSCA SEP3 to measures performed at high altitude (in commercial planes) by means a generic and flexible experimental testboard developed by TIMA. In this case the testboard was a memory architecture of 1 Gigabit made from SRAMs issued from two successive generations, 130 nm and 90 nm, respectively

Research paper thumbnail of Layout-aware laser fault injection simulation and modeling: From physical level to gate level

2014 9th IEEE International Conference on Design & Technology of Integrated Systems in Nanoscale Era (DTIS), 2014

ABSTRACT Fault injection is a technique used by hackers to retrieve secret information in circuit... more ABSTRACT Fault injection is a technique used by hackers to retrieve secret information in circuits implementing cryptographic algorithms. In particular, laser illuminations have been proven to be a very efficient mean to perform such attacks. In this paper, we present a complete laser-induced fault simulation flow geared towards the evaluation of the resistance of devices against such illuminations at design stage. For that, an accurate physical level modeling of the interaction between lasers and silicon is proposed taking into account both laser spot parameters and position and layout information. The models are abstracted at electrical and temporal/logic levels and included in a multi-level simulator.

Research paper thumbnail of Single-Event Latchup Modeling Based on Coupled Physical and Electrical Transient Simulations in CMOS Technology

IEEE Transactions on Nuclear Science, 2014

Research paper thumbnail of Modeling of radiation-induced single event transients in SOI FinFETS

2013 IEEE International Reliability Physics Symposium (IRPS), 2013

Research paper thumbnail of A Semi-empirical Approach for Heavy Ion SEU Cross Section Calculations

IEEE Transactions on Nuclear Science, 2000

The main goal of this paper is to propose an approach to calculate heavy ion SEU cross sections. ... more The main goal of this paper is to propose an approach to calculate heavy ion SEU cross sections. The starting point is the diffusion model theory, which allows the charges diffusion but does not account for electrical field in the device. This electrical field is not necessary known in the device and is difficult to be introduced simply in the

Research paper thumbnail of Operational Impact of Statistical Properties of Single Event Phenomena for On-Orbit Measurements and Predictions Improvement

IEEE Transactions on Nuclear Science, 2000

Research paper thumbnail of SEU Prediction From SET Modeling Using Multi-Node Collection in Bulk Transistors and SRAMs Down to the 65 nm Technology Node

IEEE Transactions on Nuclear Science, 2000

Research paper thumbnail of Impact of the Radial Ionization Profile on SEE Prediction for SOI Transistors and SRAMs Beyond the 32-nm Technological Node

IEEE Transactions on Nuclear Science, 2000

Research paper thumbnail of Operational SER Calculations on the SAC-C Orbit Using the Multi-Scales Single Event Phenomena Predictive Platform (MUSCA <formula formulatype="inline"><tex Notation="TeX">${\rm SEP}^{3}$</tex></formula>)

IEEE Transactions on Nuclear Science, 2000

In this paper, the Multi-Scales Single Event Phenomena Predictive Platform (MUSCA SEP3) is presen... more In this paper, the Multi-Scales Single Event Phenomena Predictive Platform (MUSCA SEP3) is presented. This platform is dedicated to predicting SEE cross sections or rates and evaluated thanks to on-board operational results on memories from the ICARE experiment (SAC-C mission). It allows for investigating the single and multiple events thus, MUSCA SEP3 helps at estimating sensitivity trend for nano-metric technology

Research paper thumbnail of Implementing Realistic Heavy Ion Tracks in a SEE Prediction Tool: Comparison Between Different Approaches

IEEE Transactions on Nuclear Science, 2000

ABSTRACT Different radial ionization profiles modeling approaches are compared for the energy dep... more ABSTRACT Different radial ionization profiles modeling approaches are compared for the energy deposition representation in a single event effects (SEE) prediction tool. The total SEU cross-section calculated with the different approaches is compared for different SOI and bulk technologies, along with the multiple bit upset (MBU) prediction. A “refined average” approach is identified as a good trade-off for implementation in an engineer SEE prediction tool, taking into account sufficiently detailed physics, without asking for too much computer resources.

Research paper thumbnail of Monte Carlo Prediction of Heavy Ion Induced MBU Sensitivity for SOI SRAMs Using Radial Ionization Profile

IEEE Transactions on Nuclear Science, 2000

Research paper thumbnail of Single-Event Transient Modeling in a 65-nm Bulk CMOS Technology Based on Multi-Physical Approach and Electrical Simulations

IEEE Transactions on Nuclear Science, 2000

Research paper thumbnail of In Flight SEU/MCU Sensitivity of Commercial Nanometric SRAMs: Operational Estimations

IEEE Transactions on Nuclear Science, 2000

... W. Mansour, and F. Pancher are with TIMA Labs, 38031 Grenoble, France (e-mail: raoul.velazco@... more ... W. Mansour, and F. Pancher are with TIMA Labs, 38031 Grenoble, France (e-mail: raoul.velazco@imag.fr; wassim.mansour@imag.fr ... Besides, in comparison with previous esti-mations [6] (dark yellow bar), the presented methodology using MUSCA leads to propose a better ...

Research paper thumbnail of Evaluation of Recent Technologies of Nonvolatile RAM

IEEE Transactions on Nuclear Science, 2000

Research paper thumbnail of A generic platform for remote accelerated tests and high altitude SEU experiments on advanced ICs: Correlation with MUSCA SEP3 calculations

2009 15th IEEE International On-Line Testing Symposium, 2009

The goal of this work is to confront SER predictions done with MUSCA SEP3 to measures performed a... more The goal of this work is to confront SER predictions done with MUSCA SEP3 to measures performed at high altitude (in commercial planes) by means a generic and flexible experimental testboard developed by TIMA. In this case the testboard was a memory architecture of 1 Gigabit made from SRAMs issued from two successive generations, 130 nm and 90 nm, respectively

Research paper thumbnail of Layout-aware laser fault injection simulation and modeling: From physical level to gate level

2014 9th IEEE International Conference on Design & Technology of Integrated Systems in Nanoscale Era (DTIS), 2014

ABSTRACT Fault injection is a technique used by hackers to retrieve secret information in circuit... more ABSTRACT Fault injection is a technique used by hackers to retrieve secret information in circuits implementing cryptographic algorithms. In particular, laser illuminations have been proven to be a very efficient mean to perform such attacks. In this paper, we present a complete laser-induced fault simulation flow geared towards the evaluation of the resistance of devices against such illuminations at design stage. For that, an accurate physical level modeling of the interaction between lasers and silicon is proposed taking into account both laser spot parameters and position and layout information. The models are abstracted at electrical and temporal/logic levels and included in a multi-level simulator.

Research paper thumbnail of Single-Event Latchup Modeling Based on Coupled Physical and Electrical Transient Simulations in CMOS Technology

IEEE Transactions on Nuclear Science, 2014

Research paper thumbnail of Modeling of radiation-induced single event transients in SOI FinFETS

2013 IEEE International Reliability Physics Symposium (IRPS), 2013

Research paper thumbnail of A Semi-empirical Approach for Heavy Ion SEU Cross Section Calculations

IEEE Transactions on Nuclear Science, 2000

The main goal of this paper is to propose an approach to calculate heavy ion SEU cross sections. ... more The main goal of this paper is to propose an approach to calculate heavy ion SEU cross sections. The starting point is the diffusion model theory, which allows the charges diffusion but does not account for electrical field in the device. This electrical field is not necessary known in the device and is difficult to be introduced simply in the

Research paper thumbnail of Operational Impact of Statistical Properties of Single Event Phenomena for On-Orbit Measurements and Predictions Improvement

IEEE Transactions on Nuclear Science, 2000

Research paper thumbnail of SEU Prediction From SET Modeling Using Multi-Node Collection in Bulk Transistors and SRAMs Down to the 65 nm Technology Node

IEEE Transactions on Nuclear Science, 2000

Research paper thumbnail of Impact of the Radial Ionization Profile on SEE Prediction for SOI Transistors and SRAMs Beyond the 32-nm Technological Node

IEEE Transactions on Nuclear Science, 2000

Research paper thumbnail of Operational SER Calculations on the SAC-C Orbit Using the Multi-Scales Single Event Phenomena Predictive Platform (MUSCA <formula formulatype="inline"><tex Notation="TeX">${\rm SEP}^{3}$</tex></formula>)

IEEE Transactions on Nuclear Science, 2000

In this paper, the Multi-Scales Single Event Phenomena Predictive Platform (MUSCA SEP3) is presen... more In this paper, the Multi-Scales Single Event Phenomena Predictive Platform (MUSCA SEP3) is presented. This platform is dedicated to predicting SEE cross sections or rates and evaluated thanks to on-board operational results on memories from the ICARE experiment (SAC-C mission). It allows for investigating the single and multiple events thus, MUSCA SEP3 helps at estimating sensitivity trend for nano-metric technology

Research paper thumbnail of Implementing Realistic Heavy Ion Tracks in a SEE Prediction Tool: Comparison Between Different Approaches

IEEE Transactions on Nuclear Science, 2000

ABSTRACT Different radial ionization profiles modeling approaches are compared for the energy dep... more ABSTRACT Different radial ionization profiles modeling approaches are compared for the energy deposition representation in a single event effects (SEE) prediction tool. The total SEU cross-section calculated with the different approaches is compared for different SOI and bulk technologies, along with the multiple bit upset (MBU) prediction. A “refined average” approach is identified as a good trade-off for implementation in an engineer SEE prediction tool, taking into account sufficiently detailed physics, without asking for too much computer resources.

Research paper thumbnail of Monte Carlo Prediction of Heavy Ion Induced MBU Sensitivity for SOI SRAMs Using Radial Ionization Profile

IEEE Transactions on Nuclear Science, 2000

Research paper thumbnail of Single-Event Transient Modeling in a 65-nm Bulk CMOS Technology Based on Multi-Physical Approach and Electrical Simulations

IEEE Transactions on Nuclear Science, 2000

Research paper thumbnail of In Flight SEU/MCU Sensitivity of Commercial Nanometric SRAMs: Operational Estimations

IEEE Transactions on Nuclear Science, 2000

... W. Mansour, and F. Pancher are with TIMA Labs, 38031 Grenoble, France (e-mail: raoul.velazco@... more ... W. Mansour, and F. Pancher are with TIMA Labs, 38031 Grenoble, France (e-mail: raoul.velazco@imag.fr; wassim.mansour@imag.fr ... Besides, in comparison with previous esti-mations [6] (dark yellow bar), the presented methodology using MUSCA leads to propose a better ...

Research paper thumbnail of Evaluation of Recent Technologies of Nonvolatile RAM

IEEE Transactions on Nuclear Science, 2000