H. Eusebe - Academia.edu (original) (raw)
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Papers by H. Eusebe
Proceedings of the IEEE International Symposium on Industrial Electronics, 2005. ISIE 2005., 2005
We present experimental characterization and numerical simulation of metal-semiconductor-metal ty... more We present experimental characterization and numerical simulation of metal-semiconductor-metal type ultrafast photoswitches made from low temperature grown GaAs doped with beryllium (LT-GaAs:Be). Generation and detection of electrical pulses are performed using a femtosecond laser source and a photoconductive sampling set up that involves nonlinear effect in the structure. Following the expected picosecond electrical response a longer relaxation tail is clearly
Journal of Applied Physics, 2004
Terahertz radiation from CdxHg1-xTe samples excited by femtosecond Ti:sapphire laser pulses were ... more Terahertz radiation from CdxHg1-xTe samples excited by femtosecond Ti:sapphire laser pulses were measured by using an ultrafast photoconductive antenna manufactured from low-temperature grown GaAs. Terahertz fields radiated by the samples of all three investigated alloy compositions with x=0, 0.2, and 0.3 were of the same order of magnitude. No azimuthal angle dependence of the radiated signal was detected, which evidences
IEEE Transactions on Microwave Theory and Techniques, 2000
Journal of Applied Physics, 2005
The dynamical electrical properties of annealed low-temperature-grown GaAs layers moderately dope... more The dynamical electrical properties of annealed low-temperature-grown GaAs layers moderately doped with beryllium are studied using photoconductive sampling. Picosecond electrical pulses are sampled using an interdigitated metal-semiconductor-metal structure. These time-resolved experiments supported by numerical simulation allow us to determine electron and hole mobilities of, respectively, 540 and 90 cm2∕V∕s. We also demonstrate that the free-electron trapping process is saturating under
Proceedings of the IEEE International Symposium on Industrial Electronics, 2005. ISIE 2005., 2005
We present experimental characterization and numerical simulation of metal-semiconductor-metal ty... more We present experimental characterization and numerical simulation of metal-semiconductor-metal type ultrafast photoswitches made from low temperature grown GaAs doped with beryllium (LT-GaAs:Be). Generation and detection of electrical pulses are performed using a femtosecond laser source and a photoconductive sampling set up that involves nonlinear effect in the structure. Following the expected picosecond electrical response a longer relaxation tail is clearly
Journal of Applied Physics, 2004
Terahertz radiation from CdxHg1-xTe samples excited by femtosecond Ti:sapphire laser pulses were ... more Terahertz radiation from CdxHg1-xTe samples excited by femtosecond Ti:sapphire laser pulses were measured by using an ultrafast photoconductive antenna manufactured from low-temperature grown GaAs. Terahertz fields radiated by the samples of all three investigated alloy compositions with x=0, 0.2, and 0.3 were of the same order of magnitude. No azimuthal angle dependence of the radiated signal was detected, which evidences
IEEE Transactions on Microwave Theory and Techniques, 2000
Journal of Applied Physics, 2005
The dynamical electrical properties of annealed low-temperature-grown GaAs layers moderately dope... more The dynamical electrical properties of annealed low-temperature-grown GaAs layers moderately doped with beryllium are studied using photoconductive sampling. Picosecond electrical pulses are sampled using an interdigitated metal-semiconductor-metal structure. These time-resolved experiments supported by numerical simulation allow us to determine electron and hole mobilities of, respectively, 540 and 90 cm2∕V∕s. We also demonstrate that the free-electron trapping process is saturating under