Hans-Christian Petzold - Academia.edu (original) (raw)
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Papers by Hans-Christian Petzold
Microelectronic Engineering, 1985
Abstract Laser radiation pulses with energies between .4 and 3 joules produced by a Nd:YAG/glass ... more Abstract Laser radiation pulses with energies between .4 and 3 joules produced by a Nd:YAG/glass system at 1064 nm and 532 nm have been focussed onto steel targets to produce intense soft x-ray radiation pulses and expose an FBM 120 resist coated wafer behind a gold patterned 2 μm silicon mask. The sensitivity of the resist was determined by an exposure to a known dose of synchrotron radiation. A conversion efficiency of 3.4 % at 1064 nm and 3 joules and 5.0 % at 532 nm and 1.2 joules has been found.
Electron-Beam, X-Ray, and Ion-Beam Technology: Submicrometer Lithographies VIII, 1989
To investigate the repair of clear defects on X-ray masks by ion-induced metal deposition, a phot... more To investigate the repair of clear defects on X-ray masks by ion-induced metal deposition, a photomask repair system was modified to allow for the localized deposition of tungsten from a gas jet of W(CO)6 vapor. With this system, dense W layers could be deposited at rates of up to 4 nm/s; the X-ray opacity of layers having a thickness of down to 200 nm was demonstrated by X-ray lithographic resist exposures using synchrotron radiation.
SPIE Proceedings, 1999
European R&D policy in microsystems technology (MST) basically aims at the strategic goal... more European R&D policy in microsystems technology (MST) basically aims at the strategic goal of promoting MST uptake by European industries, in order to strengthen and secure Europe's competitiveness world-wide. Towards that common goal, both a supporting ...
Electron-Beam, X-Ray, and Ion-Beam Technology: Submicrometer Lithographies IX, 1990
For repairing opaque defects on x-ray masks by focused gallium ion beams (Ga-FIB), it is importan... more For repairing opaque defects on x-ray masks by focused gallium ion beams (Ga-FIB), it is important to achieve nearly vertical slopes in the remaining absorber material and to avoid the redeposition of sputtered particles. The sputter yield depends on the angle of incidence. Since this angular dependence influences the slope angle, th sputter yield of a 100 keV focused Ga ion beam on polycrystalline gold, as used on x-ray masks, was measured at five different angles of incidence (8 =0 , 30 , 45 , 60 , 80 ). At normal incidence (9 =0 ) the yield is 32. It increases with increasing angle of incidence and becomes 128 at e = 80 By means of computer simulations it could be shown, that the sputter yield at great angles of incidence plays the predominant role for the evolution of the slope, even if the repair process is carried out with nominally vertical incidence. A high sputter yield at a great angle of incidence leads to a precipitous slope (a =85 ). An even better slope angle was achieved when the beam was scanned in an appropriate manner: If the center of the beam, where the ion current density is maximum (Gaussian beam shape), is directed onto the lower parts of the slope, there, an increased sputter erosion takes place. The reason is not only the increased ion current density, but the higher sputter yield at great angles of incidence as well. Experimentally and in a computer simulation it could be shown that a slope angle of a =88 can be achieved in forward direction (direction of scanning). Since redeposition affects the microstructuring of gold substantially, the redeposition characteristics (spatial distributions of sputtered particles) were measured for two angles of incidence (=0 , 45°). In both cases an area of 500 zm x 10 mm of a polycrystalline gold layer was bombarded with a 100 keV Ga+ focused ion beam. The sputtered particles were collected on semi-cylindrical glass screens. The redeposited gold layers on the inner surface of the glass screens were measurable after 40 hours of sputtering each specimen. The maximum thickness was 1.4 nm for the normal incident beam and 2.2 nm for a beam inclination of 45 . The redeposited layers were evaluated locally resolved by an optical transmission measurement system. These measurements show that the spatial distribution of the sputtered gold particles can be approximated by a cos2-function for both, normal and inclined incidence. Taking this distribution, the simulations were carried out.
Society of Photo- …, 1989
Society of Photo- …, 1989
Microelectronic Engineering, 1985
Abstract Laser radiation pulses with energies between .4 and 3 joules produced by a Nd:YAG/glass ... more Abstract Laser radiation pulses with energies between .4 and 3 joules produced by a Nd:YAG/glass system at 1064 nm and 532 nm have been focussed onto steel targets to produce intense soft x-ray radiation pulses and expose an FBM 120 resist coated wafer behind a gold patterned 2 μm silicon mask. The sensitivity of the resist was determined by an exposure to a known dose of synchrotron radiation. A conversion efficiency of 3.4 % at 1064 nm and 3 joules and 5.0 % at 532 nm and 1.2 joules has been found.
Electron-Beam, X-Ray, and Ion-Beam Technology: Submicrometer Lithographies VIII, 1989
To investigate the repair of clear defects on X-ray masks by ion-induced metal deposition, a phot... more To investigate the repair of clear defects on X-ray masks by ion-induced metal deposition, a photomask repair system was modified to allow for the localized deposition of tungsten from a gas jet of W(CO)6 vapor. With this system, dense W layers could be deposited at rates of up to 4 nm/s; the X-ray opacity of layers having a thickness of down to 200 nm was demonstrated by X-ray lithographic resist exposures using synchrotron radiation.
SPIE Proceedings, 1999
European R&D policy in microsystems technology (MST) basically aims at the strategic goal... more European R&D policy in microsystems technology (MST) basically aims at the strategic goal of promoting MST uptake by European industries, in order to strengthen and secure Europe's competitiveness world-wide. Towards that common goal, both a supporting ...
Electron-Beam, X-Ray, and Ion-Beam Technology: Submicrometer Lithographies IX, 1990
For repairing opaque defects on x-ray masks by focused gallium ion beams (Ga-FIB), it is importan... more For repairing opaque defects on x-ray masks by focused gallium ion beams (Ga-FIB), it is important to achieve nearly vertical slopes in the remaining absorber material and to avoid the redeposition of sputtered particles. The sputter yield depends on the angle of incidence. Since this angular dependence influences the slope angle, th sputter yield of a 100 keV focused Ga ion beam on polycrystalline gold, as used on x-ray masks, was measured at five different angles of incidence (8 =0 , 30 , 45 , 60 , 80 ). At normal incidence (9 =0 ) the yield is 32. It increases with increasing angle of incidence and becomes 128 at e = 80 By means of computer simulations it could be shown, that the sputter yield at great angles of incidence plays the predominant role for the evolution of the slope, even if the repair process is carried out with nominally vertical incidence. A high sputter yield at a great angle of incidence leads to a precipitous slope (a =85 ). An even better slope angle was achieved when the beam was scanned in an appropriate manner: If the center of the beam, where the ion current density is maximum (Gaussian beam shape), is directed onto the lower parts of the slope, there, an increased sputter erosion takes place. The reason is not only the increased ion current density, but the higher sputter yield at great angles of incidence as well. Experimentally and in a computer simulation it could be shown that a slope angle of a =88 can be achieved in forward direction (direction of scanning). Since redeposition affects the microstructuring of gold substantially, the redeposition characteristics (spatial distributions of sputtered particles) were measured for two angles of incidence (=0 , 45°). In both cases an area of 500 zm x 10 mm of a polycrystalline gold layer was bombarded with a 100 keV Ga+ focused ion beam. The sputtered particles were collected on semi-cylindrical glass screens. The redeposited gold layers on the inner surface of the glass screens were measurable after 40 hours of sputtering each specimen. The maximum thickness was 1.4 nm for the normal incident beam and 2.2 nm for a beam inclination of 45 . The redeposited layers were evaluated locally resolved by an optical transmission measurement system. These measurements show that the spatial distribution of the sputtered gold particles can be approximated by a cos2-function for both, normal and inclined incidence. Taking this distribution, the simulations were carried out.
Society of Photo- …, 1989
Society of Photo- …, 1989