Hideki Horii - Profile on Academia.edu (original) (raw)

Papers by Hideki Horii

Variable resistance memory device and method of manufacturing the same

Semiconductor Device Having Heating Structure and Method of Forming the Same

Methods of forming integrated circuit capacitors having protected diffusion barrier metal layers therein

Manufacturing method for capacitor having electrode formed by electroplating

Non-volatile memory device including phase-change material

Methods for forming phase changeable memory devices

Integrated circuit memory devices having memory cells therein that utilize phase-change materials to support non-volatile data retention

Phase change memory devices including carbon-containing adhesive pattern

Capacitor Having Electrode Formed by Electroplating and Manufacturing Method Thereof

Method of forming conductive line for semiconductor device using carbon nanotube and semiconductor device manufactured using the method

Phase changable memory device structures and related methods

Method of fabricating self-aligning stacked capacitor using electroplating method

Phase Change Memory Devices Including Carbon-Containing Adhesive Pattern, and Methods of Fabricating the Same

Conductive line for a semiconductor device using a carbon nanotube including a memory thin film and semiconductor device manufactured

Method for forming capacitor of semiconductor memory device using electrolplating method

Variable Resistance Memory Device and Methods of Forming the Same

Structural and Electrical Properties of Ba_ Sr_ TiO_3 Films on Ir and IrO_2 Electrodes

Japanese Journal of Applied Physics, 1997

physica status solidi (a), 2019

Recently, phase change memory is one of highly developed memory products; however, further resear... more Recently, phase change memory is one of highly developed memory products; however, further research is needed to manage intrinsic variations in switching voltage and resistance drift, which is crucial for high density memory development. Current–voltage characteristics, their temperature dependence, and voltage‐dependent resistance switching characteristics at various programming times are investigated. These data provide an indirect characterization of microstructural phase distribution in the phase change material during memory operations. Subthreshold current–voltage symmetry in phase change memory cells can be used for identifying filamentary or non‐filamentary conducting paths, both of which are controllably formed by adjusting the programming time. This work may contribute to an improved operation method to mitigate intrinsic variations in phase change memories.

Methods of forming semiconductor devices using di-block polymer layers

Method of manufacturing variable resistance memory device

Variable resistance memory device and method of manufacturing the same

Semiconductor Device Having Heating Structure and Method of Forming the Same

Methods of forming integrated circuit capacitors having protected diffusion barrier metal layers therein

Manufacturing method for capacitor having electrode formed by electroplating

Non-volatile memory device including phase-change material

Methods for forming phase changeable memory devices

Integrated circuit memory devices having memory cells therein that utilize phase-change materials to support non-volatile data retention

Phase change memory devices including carbon-containing adhesive pattern

Capacitor Having Electrode Formed by Electroplating and Manufacturing Method Thereof

Method of forming conductive line for semiconductor device using carbon nanotube and semiconductor device manufactured using the method

Phase changable memory device structures and related methods

Method of fabricating self-aligning stacked capacitor using electroplating method

Phase Change Memory Devices Including Carbon-Containing Adhesive Pattern, and Methods of Fabricating the Same

Conductive line for a semiconductor device using a carbon nanotube including a memory thin film and semiconductor device manufactured

Method for forming capacitor of semiconductor memory device using electrolplating method

Variable Resistance Memory Device and Methods of Forming the Same

Structural and Electrical Properties of Ba_ Sr_ TiO_3 Films on Ir and IrO_2 Electrodes

Japanese Journal of Applied Physics, 1997

physica status solidi (a), 2019

Recently, phase change memory is one of highly developed memory products; however, further resear... more Recently, phase change memory is one of highly developed memory products; however, further research is needed to manage intrinsic variations in switching voltage and resistance drift, which is crucial for high density memory development. Current–voltage characteristics, their temperature dependence, and voltage‐dependent resistance switching characteristics at various programming times are investigated. These data provide an indirect characterization of microstructural phase distribution in the phase change material during memory operations. Subthreshold current–voltage symmetry in phase change memory cells can be used for identifying filamentary or non‐filamentary conducting paths, both of which are controllably formed by adjusting the programming time. This work may contribute to an improved operation method to mitigate intrinsic variations in phase change memories.

Methods of forming semiconductor devices using di-block polymer layers

Method of manufacturing variable resistance memory device