Hideki Horii - Academia.edu (original) (raw)
Papers by Hideki Horii
We first present a parallel multi-confined (PMC) cell structure on single contact was successfull... more We first present a parallel multi-confined (PMC) cell structure on single contact was successfully integrated by using CVD PCM process. PMC cell shows the discrete four resistance levels with increasing applied current, and its middle resistances (D01, D10) have the low drift coefficient under 0.007. The four resistance levels were maintained up to 2E5 cycles. From simulation results, PMC cell structure is applicable to MLC PRAM device below 25nm design rule.
PURPOSE: A phase change memory device manufacturing method is provided to minimize the volume of ... more PURPOSE: A phase change memory device manufacturing method is provided to minimize the volume of a phase change film, thereby improving an endurance characteristic. CONSTITUTION: A plurality of lower electrodes(155) is arranged on a substrate. A first mold film is arranged on the substrate and extended to a first direction which exposes the multiple lower electrodes. A second mold film exposes a part of the multiple lower electrodes while being extended to a second direction crossing with the first direction. A phase change material film is connected to a part of the multiple lower electrodes on the first and second mold films. A plurality of phase change films respectively connects the phase change material films to a part of the multiple lower electrodes. A plurality of upper electrodes(180) is arranged on the multiple phase change films.
2012 IEEE International Solid-State Circuits Conference, 2012
... Jaeyun Lee, Yongjin Kwon, Soehee Kim, Jaehwan Kim, Yong-Jun Lee, Qi Wang, Sooho Cha, Sujin Ah... more ... Jaeyun Lee, Yongjin Kwon, Soehee Kim, Jaehwan Kim, Yong-Jun Lee, Qi Wang, Sooho Cha, Sujin Ahn, Hideki Horii, Jaewook Lee, Kisung Kim, Hansung Joo, Kwangjin Lee, Yeong-Taek Lee, Jeihwan Yoo, Gitae Jeong ... Figure 2.5.3 shows the dual-LY and multi-WL schemes. ...
International Electron Devices Meeting 1998. Technical Digest (Cat. No.98CH36217)
A new two-step post-annealing process to prevent degradation of integrated BST capacitors was dev... more A new two-step post-annealing process to prevent degradation of integrated BST capacitors was developed. By this process, the increment of capacitance and the reduction of leakage current were obtained without barrier oxidation. A concave-type capacitor structure with buried barrier using Pt electrodes and MOCVD BST films was demonstrated in order to solve the integration problems such as Pt etching and
2005 International Conference on Integrated Circuit Design and Technology, 2005. ICICDT 2005., 2005
Phase change RAM (PRAM) is a promising memory that can solve the problems of conventional memory ... more Phase change RAM (PRAM) is a promising memory that can solve the problems of conventional memory - scalability, write/read speed and reliability. The process technologies for the integration of high density PRAM are reviewed. The most important challenge of PRAM is the reduction of writing current. Various approaches to reduce the writing current are reviewed and other key factors for the high density PRAM are discussed.
![Research paper thumbnail of Prevention of degradation of (Ba,Sr)TiO[sub 3] during forming gas anneal by a SiO[sub 2] capped (Ba,Sr)RuO[sub 3] electrode](https://attachments.academia-assets.com/87148281/thumbnails/1.jpg)
](Journal of Applied Physics, 2003
Degradation of (Ba,Sr)TiO 3 during a forming gas anneal was examined and the effect of a SiO 2 ca... more Degradation of (Ba,Sr)TiO 3 during a forming gas anneal was examined and the effect of a SiO 2 capped (Ba,Sr)RuO 3 electrode was studied. All the samples were prepared by a rf magnetron sputtering technique and the forming gas (10% H 2 ϩ90% N 2) anneal was carried out at 400°C for 30 min. The (Ba,Sr)RuO 3 film directly exposed to H 2 ambient was damaged severely, which resulted in the reduction and phase separation into BaO and Ru. On the other hand, the SiO 2 capped (Ba,Sr)RuO 3 film was not damaged during H 2 annealing. By adopting the SiO 2 capped (Ba,Sr)RuO 3 as an electrode of (Ba,Sr)TiO 3 , the degradation of (Ba,Sr)TiO 3 could be inhibited. SiO 2 capping also decreased the extent of the reduction of a Pt/͑Ba,Sr͒TiO 3 /Pt structured capacitor, which is known to degrade dramatically. It is believed that the major cause of the tolerance to the forming gas anneal is the blocking capability of SiO 2 against the diffusion of reaction products such as H 2 O.
Journal of Applied Physics, 1998
Page 1. A comparative study on the electrical conduction mechanisms of Ba0.5Sr0.5 TiO3 thin film... more Page 1. A comparative study on the electrical conduction mechanisms of Ba0.5Sr0.5 TiO3 thin films on Pt and IrO2 electrodes Cheol Seong Hwang,a) Byoung Taek Lee, Chang Seok Kang, Jin Won Kim, Ki Hoon Lee, Hag ...
Journal of Applied Physics, 2013
Liquid and amorphous structures of Ge 2 Sb 2 Te 5 are theoretically studied with various exchange... more Liquid and amorphous structures of Ge 2 Sb 2 Te 5 are theoretically studied with various exchange-correlation functionals. It is found that the balance of competing local orders around Ge atoms is substantially affected by the functional type, and the hybrid functional leads to structures that are in best agreement with experiment. The delocalization error inherent in semilocal functionals results in overpopulation of octahedral Ge configurations, which is compounded by the limitation of melt-quench processes in identifying the most stable amorphous structure. The present work underscores the importance of functional choice when competing local orders present in disordered systems. V
PURPOSE: A phase change memory device manufacturing method is provided to minimize the volume of ... more PURPOSE: A phase change memory device manufacturing method is provided to minimize the volume of a phase change film, thereby improving an endurance characteristic. CONSTITUTION: A plurality of lower electrodes(155) is arranged on a substrate. A first mold film is arranged on the substrate and extended to a first direction which exposes the multiple lower electrodes. A second mold film exposes a part of the multiple lower electrodes while being extended to a second direction crossing with the first direction. A phase change material film is connected to a part of the multiple lower electrodes on the first and second mold films. A plurality of phase change films respectively connects the phase change material films to a part of the multiple lower electrodes. A plurality of upper electrodes(180) is arranged on the multiple phase change films.
2012 IEEE International Solid-State Circuits Conference, 2012
... Jaeyun Lee, Yongjin Kwon, Soehee Kim, Jaehwan Kim, Yong-Jun Lee, Qi Wang, Sooho Cha, Sujin Ah... more ... Jaeyun Lee, Yongjin Kwon, Soehee Kim, Jaehwan Kim, Yong-Jun Lee, Qi Wang, Sooho Cha, Sujin Ahn, Hideki Horii, Jaewook Lee, Kisung Kim, Hansung Joo, Kwangjin Lee, Yeong-Taek Lee, Jeihwan Yoo, Gitae Jeong ... Figure 2.5.3 shows the dual-LY and multi-WL schemes. ...
Japanese Journal of Applied Physics, 1996
We propose a three-parametric extension of integrable non-uniform spin lattices in 1D. In our mod... more We propose a three-parametric extension of integrable non-uniform spin lattices in 1D. In our model, the spins are located at the equilibrium positions of particles interacting via the potential (sinh(r)) −2 , the particles being confined by some external field. The Lax representation, conserved current and special set of eigenvectors are presented in explicit form.
International Electron Devices Meeting 1998. Technical Digest (Cat. No.98CH36217)
A new two-step post-annealing process to prevent degradation of integrated BST capacitors was dev... more A new two-step post-annealing process to prevent degradation of integrated BST capacitors was developed. By this process, the increment of capacitance and the reduction of leakage current were obtained without barrier oxidation. A concave-type capacitor structure with buried barrier using Pt electrodes and MOCVD BST films was demonstrated in order to solve the integration problems such as Pt etching and
We first present a parallel multi-confined (PMC) cell structure on single contact was successfull... more We first present a parallel multi-confined (PMC) cell structure on single contact was successfully integrated by using CVD PCM process. PMC cell shows the discrete four resistance levels with increasing applied current, and its middle resistances (D01, D10) have the low drift coefficient under 0.007. The four resistance levels were maintained up to 2E5 cycles. From simulation results, PMC cell structure is applicable to MLC PRAM device below 25nm design rule.
PURPOSE: A phase change memory device manufacturing method is provided to minimize the volume of ... more PURPOSE: A phase change memory device manufacturing method is provided to minimize the volume of a phase change film, thereby improving an endurance characteristic. CONSTITUTION: A plurality of lower electrodes(155) is arranged on a substrate. A first mold film is arranged on the substrate and extended to a first direction which exposes the multiple lower electrodes. A second mold film exposes a part of the multiple lower electrodes while being extended to a second direction crossing with the first direction. A phase change material film is connected to a part of the multiple lower electrodes on the first and second mold films. A plurality of phase change films respectively connects the phase change material films to a part of the multiple lower electrodes. A plurality of upper electrodes(180) is arranged on the multiple phase change films.
2012 IEEE International Solid-State Circuits Conference, 2012
... Jaeyun Lee, Yongjin Kwon, Soehee Kim, Jaehwan Kim, Yong-Jun Lee, Qi Wang, Sooho Cha, Sujin Ah... more ... Jaeyun Lee, Yongjin Kwon, Soehee Kim, Jaehwan Kim, Yong-Jun Lee, Qi Wang, Sooho Cha, Sujin Ahn, Hideki Horii, Jaewook Lee, Kisung Kim, Hansung Joo, Kwangjin Lee, Yeong-Taek Lee, Jeihwan Yoo, Gitae Jeong ... Figure 2.5.3 shows the dual-LY and multi-WL schemes. ...
International Electron Devices Meeting 1998. Technical Digest (Cat. No.98CH36217)
A new two-step post-annealing process to prevent degradation of integrated BST capacitors was dev... more A new two-step post-annealing process to prevent degradation of integrated BST capacitors was developed. By this process, the increment of capacitance and the reduction of leakage current were obtained without barrier oxidation. A concave-type capacitor structure with buried barrier using Pt electrodes and MOCVD BST films was demonstrated in order to solve the integration problems such as Pt etching and
2005 International Conference on Integrated Circuit Design and Technology, 2005. ICICDT 2005., 2005
Phase change RAM (PRAM) is a promising memory that can solve the problems of conventional memory ... more Phase change RAM (PRAM) is a promising memory that can solve the problems of conventional memory - scalability, write/read speed and reliability. The process technologies for the integration of high density PRAM are reviewed. The most important challenge of PRAM is the reduction of writing current. Various approaches to reduce the writing current are reviewed and other key factors for the high density PRAM are discussed.
Journal of Applied Physics, 2003
Degradation of (Ba,Sr)TiO 3 during a forming gas anneal was examined and the effect of a SiO 2 ca... more Degradation of (Ba,Sr)TiO 3 during a forming gas anneal was examined and the effect of a SiO 2 capped (Ba,Sr)RuO 3 electrode was studied. All the samples were prepared by a rf magnetron sputtering technique and the forming gas (10% H 2 ϩ90% N 2) anneal was carried out at 400°C for 30 min. The (Ba,Sr)RuO 3 film directly exposed to H 2 ambient was damaged severely, which resulted in the reduction and phase separation into BaO and Ru. On the other hand, the SiO 2 capped (Ba,Sr)RuO 3 film was not damaged during H 2 annealing. By adopting the SiO 2 capped (Ba,Sr)RuO 3 as an electrode of (Ba,Sr)TiO 3 , the degradation of (Ba,Sr)TiO 3 could be inhibited. SiO 2 capping also decreased the extent of the reduction of a Pt/͑Ba,Sr͒TiO 3 /Pt structured capacitor, which is known to degrade dramatically. It is believed that the major cause of the tolerance to the forming gas anneal is the blocking capability of SiO 2 against the diffusion of reaction products such as H 2 O.
Journal of Applied Physics, 1998
Page 1. A comparative study on the electrical conduction mechanisms of Ba0.5Sr0.5 TiO3 thin film... more Page 1. A comparative study on the electrical conduction mechanisms of Ba0.5Sr0.5 TiO3 thin films on Pt and IrO2 electrodes Cheol Seong Hwang,a) Byoung Taek Lee, Chang Seok Kang, Jin Won Kim, Ki Hoon Lee, Hag ...
Journal of Applied Physics, 2013
Liquid and amorphous structures of Ge 2 Sb 2 Te 5 are theoretically studied with various exchange... more Liquid and amorphous structures of Ge 2 Sb 2 Te 5 are theoretically studied with various exchange-correlation functionals. It is found that the balance of competing local orders around Ge atoms is substantially affected by the functional type, and the hybrid functional leads to structures that are in best agreement with experiment. The delocalization error inherent in semilocal functionals results in overpopulation of octahedral Ge configurations, which is compounded by the limitation of melt-quench processes in identifying the most stable amorphous structure. The present work underscores the importance of functional choice when competing local orders present in disordered systems. V
PURPOSE: A phase change memory device manufacturing method is provided to minimize the volume of ... more PURPOSE: A phase change memory device manufacturing method is provided to minimize the volume of a phase change film, thereby improving an endurance characteristic. CONSTITUTION: A plurality of lower electrodes(155) is arranged on a substrate. A first mold film is arranged on the substrate and extended to a first direction which exposes the multiple lower electrodes. A second mold film exposes a part of the multiple lower electrodes while being extended to a second direction crossing with the first direction. A phase change material film is connected to a part of the multiple lower electrodes on the first and second mold films. A plurality of phase change films respectively connects the phase change material films to a part of the multiple lower electrodes. A plurality of upper electrodes(180) is arranged on the multiple phase change films.
2012 IEEE International Solid-State Circuits Conference, 2012
... Jaeyun Lee, Yongjin Kwon, Soehee Kim, Jaehwan Kim, Yong-Jun Lee, Qi Wang, Sooho Cha, Sujin Ah... more ... Jaeyun Lee, Yongjin Kwon, Soehee Kim, Jaehwan Kim, Yong-Jun Lee, Qi Wang, Sooho Cha, Sujin Ahn, Hideki Horii, Jaewook Lee, Kisung Kim, Hansung Joo, Kwangjin Lee, Yeong-Taek Lee, Jeihwan Yoo, Gitae Jeong ... Figure 2.5.3 shows the dual-LY and multi-WL schemes. ...
Japanese Journal of Applied Physics, 1996
We propose a three-parametric extension of integrable non-uniform spin lattices in 1D. In our mod... more We propose a three-parametric extension of integrable non-uniform spin lattices in 1D. In our model, the spins are located at the equilibrium positions of particles interacting via the potential (sinh(r)) −2 , the particles being confined by some external field. The Lax representation, conserved current and special set of eigenvectors are presented in explicit form.
International Electron Devices Meeting 1998. Technical Digest (Cat. No.98CH36217)
A new two-step post-annealing process to prevent degradation of integrated BST capacitors was dev... more A new two-step post-annealing process to prevent degradation of integrated BST capacitors was developed. By this process, the increment of capacitance and the reduction of leakage current were obtained without barrier oxidation. A concave-type capacitor structure with buried barrier using Pt electrodes and MOCVD BST films was demonstrated in order to solve the integration problems such as Pt etching and