Hongmei Li - Profile on Academia.edu (original) (raw)
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Daegu Gyeongbuk Institute of Science and Technology
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Papers by Hongmei Li
The substrate resistance of 45 nm CMOS devices shows a strong dependence on the distance between ... more The substrate resistance of 45 nm CMOS devices shows a strong dependence on the distance between the device edge and the substrate ring; as well as on the number of sides that the device is surrounded by the contact ring. We find that the unilateral gain is impacted by the substrate resistance (R sx) through the gate-body capacitance feedback path at low to medium frequencies (< 20GHz). At mm wave frequencies, the unilateral gain is affected by the R sx through the drain-body capacitance pole, and deviates from the ideal-20dB/dec slope. The impact of substrate resistance on f T , maximum available gain, high frequency noise and power characteristics of the devices is minimal.
IEEE Transactions on Electron Devices, 2005
MOSFET breakdown voltage is strongly affected by the measurement conditions and the device layout... more MOSFET breakdown voltage is strongly affected by the measurement conditions and the device layout. DB GD sub , and gate must be extracted in order to predict the device trigger voltage under subthreshold, non-dc conditions. Substrate resistance is modeled with a simple, semi-empirical equation.
Capacitance investigation of diode and GGNMOS for ESD protection of high frequency circuits in 45nm SOI CMOS technologies
... ESD Protection of High Frequency Circuits in 45nm SOI CMOS Technologies Junjun Li, Souvick Mi... more ... ESD Protection of High Frequency Circuits in 45nm SOI CMOS Technologies Junjun Li, Souvick Mitra, Hongmei Li, Michel J. Abou-Khalil, Kiran Chatty, Robert Gauthier ... EOS/ESD Symposium, pp. 250-256, 2007. [4] K. Chatty, R. Gauthier, C. Putnam, M. Muhammad, M. Woo, J. Li ...
The substrate resistance of 45 nm CMOS devices shows a strong dependence on the distance between ... more The substrate resistance of 45 nm CMOS devices shows a strong dependence on the distance between the device edge and the substrate ring; as well as on the number of sides that the device is surrounded by the contact ring. We find that the unilateral gain is impacted by the substrate resistance (R sx) through the gate-body capacitance feedback path at low to medium frequencies (< 20GHz). At mm wave frequencies, the unilateral gain is affected by the R sx through the drain-body capacitance pole, and deviates from the ideal-20dB/dec slope. The impact of substrate resistance on f T , maximum available gain, high frequency noise and power characteristics of the devices is minimal.
IEEE Transactions on Electron Devices, 2005
MOSFET breakdown voltage is strongly affected by the measurement conditions and the device layout... more MOSFET breakdown voltage is strongly affected by the measurement conditions and the device layout. DB GD sub , and gate must be extracted in order to predict the device trigger voltage under subthreshold, non-dc conditions. Substrate resistance is modeled with a simple, semi-empirical equation.
Capacitance investigation of diode and GGNMOS for ESD protection of high frequency circuits in 45nm SOI CMOS technologies
... ESD Protection of High Frequency Circuits in 45nm SOI CMOS Technologies Junjun Li, Souvick Mi... more ... ESD Protection of High Frequency Circuits in 45nm SOI CMOS Technologies Junjun Li, Souvick Mitra, Hongmei Li, Michel J. Abou-Khalil, Kiran Chatty, Robert Gauthier ... EOS/ESD Symposium, pp. 250-256, 2007. [4] K. Chatty, R. Gauthier, C. Putnam, M. Muhammad, M. Woo, J. Li ...