Igor Brouk - Academia.edu (original) (raw)

Papers by Igor Brouk

Research paper thumbnail of Study of a Voltage-Mode Readout Configuration for Micromachined CMOS Transistors for Uncooled IR Sensing

2021 IEEE 12th Latin America Symposium on Circuits and System (LASCAS)

Micromachined CMOS transistors, dubbed as “TMOS”, have been developed in recent years as a novel ... more Micromachined CMOS transistors, dubbed as “TMOS”, have been developed in recent years as a novel type of uncooled thermal sensors. The TMOS consists of a thermally isolated suspended transistor, fabricated in a 130-nm process and released by dry etching, which absorbs thermal radiation, inducing an increase of the transistor temperature and, therefore, generating a signal by changing the transistor I-V characteristics. With respect to conventional thermal sensors, as the TMOS is an active sensing element, it features advantages in terms of internal gain, resulting in high temperature sensitivity, which makes the TMOS particularly appealing. The TMOS sensing performance depends on the transistor operating region and on its configuration. In this paper, different configurations are investigated by means of Cadence simulations, in order to identify the voltage-mode readout configuration which maximizes the sensor performance. Voltage-mode, and not current-mode, readout is considered in order to be able to directly compare the TMOS performance with the one of an integrated micromachined thermopile sensor, which, given its characteristics, only supports voltage-mode readout.

Research paper thumbnail of CMOS SOI image sensor

Proceedings of the 2004 11th IEEE International Conference on Electronics, Circuits and Systems, 2004. ICECS 2004., 2004

Design, operation and measurement results of a CMOS camera implemented within a SOI wafer are pre... more Design, operation and measurement results of a CMOS camera implemented within a SOI wafer are presented. The peak of photodiode quantum efficiency is obtained for the wavelengths of 400-500 nm. In addition, noise measurements of the 1/f noise in P-MOS and N-MOS transistors for analog applications are reported under wide bias conditions ranging from subthreshold to saturation. Two implementations (in regular and SOI wafers) of 0.35 /spl mu/m CMOS analog process are compared and it is found that they exhibit similar 1/f noise. The results of this study are useful to the design and modeling of 1/f noise of CMOS analog circuits.

Research paper thumbnail of Novel Miniature and Selective Combustion-Type CMOS Gas Sensor for Gas-Mixture Analysis—Part 1: Emphasis on Chemical Aspects

Micromachines

There is an ongoing effort to fabricate miniature, low cost, sensitive, and selective gas sensors... more There is an ongoing effort to fabricate miniature, low cost, sensitive, and selective gas sensors for domestic and industrial uses. This paper presents a miniature combustion-type gas sensor (GMOS) based on a thermal sensor, where a micromachined CMOS–SOI transistor integrated with a catalytic reaction plate acts as a sensing element. This study emphasizes GMOS performance modeling, technological aspects, and sensing-selectivity issues. Two deposition techniques of a Pt catalytic layer suitable for wafer-level processing were compared, magnetron sputtering and nanoparticle inkjet printing. Both techniques have been useful for the fabrication of GMOS sensor, with good sensitivity to ethanol and acetone in the air. However, a printed Pt nanoparticle catalyst provides almost twice as much sensitivity as compared to that of the sputtered catalyst. Moreover, sensing selectivity in the ethanol/acetone gas mixture was demonstrated for the GMOS with a Pt nanoparticle catalyst. These advanta...

Research paper thumbnail of Study of CMOS-SOI Integrated Temperature Sensing Circuits for On-Chip Temperature Monitoring

Research paper thumbnail of Modeling the Performance of Mosaic Uncooled Passive IR Sensors in CMOS–SOI Technology

IEEE Transactions on Electron Devices

Research paper thumbnail of Modeling the Performance of Nano Machined CMOS Transistors for Uncooled IR Sensing

IEEE Transactions on Electron Devices

Research paper thumbnail of A New Pellistor-Like Gas Sensor Based on Micromachined CMOS Transistor

IEEE Transactions on Electron Devices

Research paper thumbnail of CMOS-SOI-NEMS uncooled infrared presence sensor

2016 IEEE International Conference on the Science of Electrical Engineering (ICSEE), 2016

Research paper thumbnail of CMOS-SOI-MEMS Uncooled Infrared Security Sensor With Integrated Readout

IEEE Journal of the Electron Devices Society, 2016

Research paper thumbnail of CMOS-SOI-MEMS Thermal Antenna and Sensor for Uncooled THz Imaging

IEEE Transactions on Electron Devices, 2016

Research paper thumbnail of Analysis of noise in CMOS image sensor based on a unified time-dependent approach

Solid State Electronics, 2010

A detailed time-domain analysis of noise due to thermal, 1/f and shot noise sources in CMOS activ... more A detailed time-domain analysis of noise due to thermal, 1/f and shot noise sources in CMOS active pixel sensors (APS) based on 3T and 4T pixel design is performed. We suggest that the conventional noise analysis based on the frequency domain, usually used for noise calculations of APS’s cannot be strictly applied, because the switched APS circuitry under study cannot

Research paper thumbnail of Self- heating effects in CMOS-SOI-NEMS transistors for uncooled passive IR sensors

2015 IEEE International Conference on Microwaves, Communications, Antennas and Electronic Systems (COMCAS), 2015

Research paper thumbnail of Device Having an Avalanche Photo Diode and a Method for Sensing Photons

Research paper thumbnail of Ion Sensitive Detector

Research paper thumbnail of Modeling of CMOS-SOI-MEMS thermal antenna for monolithic passive uncooled THz imagers

2015 International Conference on Optical MEMS and Nanophotonics (OMN), 2015

Research paper thumbnail of Gun muzzle flash detection using a single photon avalanche diode array in 0.18µm CMOS technology

Advanced Photon Counting Techniques IX, 2015

Research paper thumbnail of The TeraMOS sensor for monolithic passive THz imagers

2011 IEEE International Conference on Microwaves, Communications, Antennas and Electronic Systems (COMCAS 2011), 2011

We report of a new sensor, which is based on several leading technologies: THz photonics, CMOS-SO... more We report of a new sensor, which is based on several leading technologies: THz photonics, CMOS-SOI (Silicon-on-Insulator) and MEMS/NEMS (Micro/Nano Electro Mechanical Systems). By introducing the TeraMOS sensor, which may be directly integrated with the CMOS-SOI readout circuitry, we expect to achieve a breakthrough in Terahertz passive imaging (0.5–1.5 THz) both in performance and cost. NEP (Noise Equivalent Power) of

Research paper thumbnail of Voltage and current integrated readout for uncooled passive IR sensors based on CMOS-SOI-NEMS technology

2014 IEEE 28th Convention of Electrical & Electronics Engineers in Israel (IEEEI), 2014

Research paper thumbnail of Noise characterization of the 0.35 μm CMOS analog process implemented in regular and SOI wafers

Proceedings of the 2004 11th IEEE International Conference on Electronics, Circuits and Systems, 2004. ICECS 2004., 2004

Noise measurements of the /f noise in p-MOS and n-MOS transistors for analog applications are rep... more Noise measurements of the /f noise in p-MOS and n-MOS transistors for analog applications are reported under wide bias conditions ranging from subthreshold to saturation. Two implementations (in "regular" and SOI wafers) of the 0.35 μm CMOS process are compared and it is found that they exhibit similar 1/f noise. The results of this characterization of the 0.35 μm process are compared with the similar characterization results of the 0.5 μm CMOS process. The results of this study are useful in the design and modeling of /f noise of CMOS analog circuits.

Research paper thumbnail of The TeraMOS sensing pixel for monolithic passive uncooled THz imagers

2012 International Conference on Optical MEMS and Nanophotonics, 2012

ABSTRACT We report a novel THz sensor, based on several leading technologies: THz photonics, CMOS... more ABSTRACT We report a novel THz sensor, based on several leading technologies: THz photonics, CMOS-SOI and NEMS. By integrating the TeraMOS sensor with “thermal antenna”, we expect to achieve a breakthrough in uncooled Terahertz passive imaging.

Research paper thumbnail of Study of a Voltage-Mode Readout Configuration for Micromachined CMOS Transistors for Uncooled IR Sensing

2021 IEEE 12th Latin America Symposium on Circuits and System (LASCAS)

Micromachined CMOS transistors, dubbed as “TMOS”, have been developed in recent years as a novel ... more Micromachined CMOS transistors, dubbed as “TMOS”, have been developed in recent years as a novel type of uncooled thermal sensors. The TMOS consists of a thermally isolated suspended transistor, fabricated in a 130-nm process and released by dry etching, which absorbs thermal radiation, inducing an increase of the transistor temperature and, therefore, generating a signal by changing the transistor I-V characteristics. With respect to conventional thermal sensors, as the TMOS is an active sensing element, it features advantages in terms of internal gain, resulting in high temperature sensitivity, which makes the TMOS particularly appealing. The TMOS sensing performance depends on the transistor operating region and on its configuration. In this paper, different configurations are investigated by means of Cadence simulations, in order to identify the voltage-mode readout configuration which maximizes the sensor performance. Voltage-mode, and not current-mode, readout is considered in order to be able to directly compare the TMOS performance with the one of an integrated micromachined thermopile sensor, which, given its characteristics, only supports voltage-mode readout.

Research paper thumbnail of CMOS SOI image sensor

Proceedings of the 2004 11th IEEE International Conference on Electronics, Circuits and Systems, 2004. ICECS 2004., 2004

Design, operation and measurement results of a CMOS camera implemented within a SOI wafer are pre... more Design, operation and measurement results of a CMOS camera implemented within a SOI wafer are presented. The peak of photodiode quantum efficiency is obtained for the wavelengths of 400-500 nm. In addition, noise measurements of the 1/f noise in P-MOS and N-MOS transistors for analog applications are reported under wide bias conditions ranging from subthreshold to saturation. Two implementations (in regular and SOI wafers) of 0.35 /spl mu/m CMOS analog process are compared and it is found that they exhibit similar 1/f noise. The results of this study are useful to the design and modeling of 1/f noise of CMOS analog circuits.

Research paper thumbnail of Novel Miniature and Selective Combustion-Type CMOS Gas Sensor for Gas-Mixture Analysis—Part 1: Emphasis on Chemical Aspects

Micromachines

There is an ongoing effort to fabricate miniature, low cost, sensitive, and selective gas sensors... more There is an ongoing effort to fabricate miniature, low cost, sensitive, and selective gas sensors for domestic and industrial uses. This paper presents a miniature combustion-type gas sensor (GMOS) based on a thermal sensor, where a micromachined CMOS–SOI transistor integrated with a catalytic reaction plate acts as a sensing element. This study emphasizes GMOS performance modeling, technological aspects, and sensing-selectivity issues. Two deposition techniques of a Pt catalytic layer suitable for wafer-level processing were compared, magnetron sputtering and nanoparticle inkjet printing. Both techniques have been useful for the fabrication of GMOS sensor, with good sensitivity to ethanol and acetone in the air. However, a printed Pt nanoparticle catalyst provides almost twice as much sensitivity as compared to that of the sputtered catalyst. Moreover, sensing selectivity in the ethanol/acetone gas mixture was demonstrated for the GMOS with a Pt nanoparticle catalyst. These advanta...

Research paper thumbnail of Study of CMOS-SOI Integrated Temperature Sensing Circuits for On-Chip Temperature Monitoring

Research paper thumbnail of Modeling the Performance of Mosaic Uncooled Passive IR Sensors in CMOS–SOI Technology

IEEE Transactions on Electron Devices

Research paper thumbnail of Modeling the Performance of Nano Machined CMOS Transistors for Uncooled IR Sensing

IEEE Transactions on Electron Devices

Research paper thumbnail of A New Pellistor-Like Gas Sensor Based on Micromachined CMOS Transistor

IEEE Transactions on Electron Devices

Research paper thumbnail of CMOS-SOI-NEMS uncooled infrared presence sensor

2016 IEEE International Conference on the Science of Electrical Engineering (ICSEE), 2016

Research paper thumbnail of CMOS-SOI-MEMS Uncooled Infrared Security Sensor With Integrated Readout

IEEE Journal of the Electron Devices Society, 2016

Research paper thumbnail of CMOS-SOI-MEMS Thermal Antenna and Sensor for Uncooled THz Imaging

IEEE Transactions on Electron Devices, 2016

Research paper thumbnail of Analysis of noise in CMOS image sensor based on a unified time-dependent approach

Solid State Electronics, 2010

A detailed time-domain analysis of noise due to thermal, 1/f and shot noise sources in CMOS activ... more A detailed time-domain analysis of noise due to thermal, 1/f and shot noise sources in CMOS active pixel sensors (APS) based on 3T and 4T pixel design is performed. We suggest that the conventional noise analysis based on the frequency domain, usually used for noise calculations of APS’s cannot be strictly applied, because the switched APS circuitry under study cannot

Research paper thumbnail of Self- heating effects in CMOS-SOI-NEMS transistors for uncooled passive IR sensors

2015 IEEE International Conference on Microwaves, Communications, Antennas and Electronic Systems (COMCAS), 2015

Research paper thumbnail of Device Having an Avalanche Photo Diode and a Method for Sensing Photons

Research paper thumbnail of Ion Sensitive Detector

Research paper thumbnail of Modeling of CMOS-SOI-MEMS thermal antenna for monolithic passive uncooled THz imagers

2015 International Conference on Optical MEMS and Nanophotonics (OMN), 2015

Research paper thumbnail of Gun muzzle flash detection using a single photon avalanche diode array in 0.18µm CMOS technology

Advanced Photon Counting Techniques IX, 2015

Research paper thumbnail of The TeraMOS sensor for monolithic passive THz imagers

2011 IEEE International Conference on Microwaves, Communications, Antennas and Electronic Systems (COMCAS 2011), 2011

We report of a new sensor, which is based on several leading technologies: THz photonics, CMOS-SO... more We report of a new sensor, which is based on several leading technologies: THz photonics, CMOS-SOI (Silicon-on-Insulator) and MEMS/NEMS (Micro/Nano Electro Mechanical Systems). By introducing the TeraMOS sensor, which may be directly integrated with the CMOS-SOI readout circuitry, we expect to achieve a breakthrough in Terahertz passive imaging (0.5–1.5 THz) both in performance and cost. NEP (Noise Equivalent Power) of

Research paper thumbnail of Voltage and current integrated readout for uncooled passive IR sensors based on CMOS-SOI-NEMS technology

2014 IEEE 28th Convention of Electrical & Electronics Engineers in Israel (IEEEI), 2014

Research paper thumbnail of Noise characterization of the 0.35 μm CMOS analog process implemented in regular and SOI wafers

Proceedings of the 2004 11th IEEE International Conference on Electronics, Circuits and Systems, 2004. ICECS 2004., 2004

Noise measurements of the /f noise in p-MOS and n-MOS transistors for analog applications are rep... more Noise measurements of the /f noise in p-MOS and n-MOS transistors for analog applications are reported under wide bias conditions ranging from subthreshold to saturation. Two implementations (in "regular" and SOI wafers) of the 0.35 μm CMOS process are compared and it is found that they exhibit similar 1/f noise. The results of this characterization of the 0.35 μm process are compared with the similar characterization results of the 0.5 μm CMOS process. The results of this study are useful in the design and modeling of /f noise of CMOS analog circuits.

Research paper thumbnail of The TeraMOS sensing pixel for monolithic passive uncooled THz imagers

2012 International Conference on Optical MEMS and Nanophotonics, 2012

ABSTRACT We report a novel THz sensor, based on several leading technologies: THz photonics, CMOS... more ABSTRACT We report a novel THz sensor, based on several leading technologies: THz photonics, CMOS-SOI and NEMS. By integrating the TeraMOS sensor with “thermal antenna”, we expect to achieve a breakthrough in uncooled Terahertz passive imaging.