J. Gleize - Academia.edu (original) (raw)

Papers by J. Gleize

Research paper thumbnail of Microscopic Description of Nanostructures Grown on (N11) Surfaces

Journal of Computational Electronics, 2003

We report on a theoretical study of GaAs/InGaAs based nanostructures grown along the [N11] direct... more We report on a theoretical study of GaAs/InGaAs based nanostructures grown along the [N11] direction. The elastic deformations of the structures were calculated by means of the continuum elasticity theory, taking into account commensurability constraints at the interfaces. The strained atomic positions were derived, as well as the strain induced piezoelectric polarizations and electric fields. These data were used as an input for the calculation of the fundamental electronic transitions of our systems within the empirical tight-binding approach. These results are compared with the envelope function methods. We applied our approach to a (211) oriented InAs quantum dot embedded in a GaAs matrix, and to a (311) oriented InGaAs quantum wire, embedded in AlGaAs barriers. In both cases, we obtained a non-symmetric elastic deformation due to the lower symmetry of (N11)-oriented structures. Moreover, the atomic displacements and the strain induced piezoelectric potential induce a separation of the hole and electron wave functions, which are shifted from the dot center.

Research paper thumbnail of Non-linear optical properties of InGaAs/AlGaAs nanostructures grown on (N11) surfaces

Semiconductor Science and Technology, 2004

We report on experimental and theoretical study of GaA/InGaAs quantum systems grown along the [N1... more We report on experimental and theoretical study of GaA/InGaAs quantum systems grown along the [N11] direction. Time-resolved photoluminescence measurements have revealed a strong non-linear optical response from a sidewall quantum wire. The experimental results were reproduced by theoretical calculations taking into account strain, piezo-charge and excitonic effect. Also we theoretically investigated the effect of strain and piezo-charge on the properties of a quantum dot.

Research paper thumbnail of Tight-Binding Simulation of an InGaN/GaN Quantum Well with indium Concentration Fluctuation

physica status solidi (c), 2003

Research paper thumbnail of Indium Distribution within InxGa1?xN Epitaxial Layers: A Combined Resonant Raman Scattering and Rutherford Backscattering Study

physica status solidi (b), 2001

We report a Raman spectroscopy study performed at room temperature on In x Ga 1--x N epitaxial la... more We report a Raman spectroscopy study performed at room temperature on In x Ga 1--x N epitaxial layers grown by metalorganic chemical vapour deposition on top of GaN/sapphire (0001) substrates. Resonant Raman measurements have been performed using excitation energies of 2.34, 2.54 and 3.02 eV. A shift of the A 1 (LO) phonon mode frequency was observed under different excitation energies. This is interpreted with respect to the composition and strain variations within the sample. The A 1 (LO) phonon line shape is analysed using a Spatial Correlation Model (SC). The structural parameters were determined by Rutherford backscattering spectrometry (RBS).

Research paper thumbnail of Effect of oxygen annealing on the Mn2+ properties in ZnMnO Films

Journal of Magnetism and Magnetic Materials, 2007

We studied the influence of thermal annealing in oxygen on the physical properties of MOCVD grown... more We studied the influence of thermal annealing in oxygen on the physical properties of MOCVD grown Zn 1Àx Mn x O thin layers. Annealing in the 300-1000 1C temperature range modifies both lattice parameters and magnetic properties of the layers. Correlation of the results from X-ray diffraction, EPR studies and Raman spectroscopy indicate a modification of the Mn +2 -related features in the ZnO matrix. r

Research paper thumbnail of Optical investigation of micrometer and nanometer-size individual GaN pillars fabricated by reactive ion etching

Journal of Applied Physics, 2002

We present an optical investigation of GaN pillars using both micro-Raman ͑-Raman͒ and microphoto... more We present an optical investigation of GaN pillars using both micro-Raman ͑-Raman͒ and microphotoluminescence ͑-PL͒ spectroscopy. GaN pillars of diameter ranging from 100 nm to 5 m were fabricated by electron beam lithography and reactive ion etching ͑RIE͒ with SiCl 4 plasma. Optical measurements of both -Raman and -PL on individual pillars show consistent variations in the properties of the fabricated GaN structures as a function of GaN pillar size. -PL mapping gives strong evidence for defect-induced donors and/or acceptors near the facets of the RIE etched pillars. RIE for the nanostructuration of GaN could be used in the future to allow spectroscopic studies of a few or single quantum objects such as GaN quantum dots.

Research paper thumbnail of Signature of GaN–AlN quantum dots by nonresonant Raman scattering

Applied Physics Letters, 2000

Negative photoconductivity due to intraband transitions in GaN/AlN quantum dots Polarized emissio... more Negative photoconductivity due to intraband transitions in GaN/AlN quantum dots Polarized emission from GaN/AlN quantum dots subject to uniaxial thermal interfacial stresses J. Vac. Sci. Technol. B 28, C5E25 (2010); 10.1116/1.3435325 Effects of stacking on the structural and optical properties of self-organized GaN/AlN quantum dots

Research paper thumbnail of Microscopic Description of Nanostructures Grown on (N11) Surfaces

Journal of Computational Electronics, 2003

We report on a theoretical study of GaAs/InGaAs based nanostructures grown along the [N11] direct... more We report on a theoretical study of GaAs/InGaAs based nanostructures grown along the [N11] direction. The elastic deformations of the structures were calculated by means of the continuum elasticity theory, taking into account commensurability constraints at the interfaces. The strained atomic positions were derived, as well as the strain induced piezoelectric polarizations and electric fields. These data were used as an input for the calculation of the fundamental electronic transitions of our systems within the empirical tight-binding approach. These results are compared with the envelope function methods. We applied our approach to a (211) oriented InAs quantum dot embedded in a GaAs matrix, and to a (311) oriented InGaAs quantum wire, embedded in AlGaAs barriers. In both cases, we obtained a non-symmetric elastic deformation due to the lower symmetry of (N11)-oriented structures. Moreover, the atomic displacements and the strain induced piezoelectric potential induce a separation of the hole and electron wave functions, which are shifted from the dot center.

Research paper thumbnail of Non-linear optical properties of InGaAs/AlGaAs nanostructures grown on (N11) surfaces

Semiconductor Science and Technology, 2004

We report on experimental and theoretical study of GaA/InGaAs quantum systems grown along the [N1... more We report on experimental and theoretical study of GaA/InGaAs quantum systems grown along the [N11] direction. Time-resolved photoluminescence measurements have revealed a strong non-linear optical response from a sidewall quantum wire. The experimental results were reproduced by theoretical calculations taking into account strain, piezo-charge and excitonic effect. Also we theoretically investigated the effect of strain and piezo-charge on the properties of a quantum dot.

Research paper thumbnail of Tight-Binding Simulation of an InGaN/GaN Quantum Well with indium Concentration Fluctuation

physica status solidi (c), 2003

Research paper thumbnail of Indium Distribution within InxGa1?xN Epitaxial Layers: A Combined Resonant Raman Scattering and Rutherford Backscattering Study

physica status solidi (b), 2001

We report a Raman spectroscopy study performed at room temperature on In x Ga 1--x N epitaxial la... more We report a Raman spectroscopy study performed at room temperature on In x Ga 1--x N epitaxial layers grown by metalorganic chemical vapour deposition on top of GaN/sapphire (0001) substrates. Resonant Raman measurements have been performed using excitation energies of 2.34, 2.54 and 3.02 eV. A shift of the A 1 (LO) phonon mode frequency was observed under different excitation energies. This is interpreted with respect to the composition and strain variations within the sample. The A 1 (LO) phonon line shape is analysed using a Spatial Correlation Model (SC). The structural parameters were determined by Rutherford backscattering spectrometry (RBS).

Research paper thumbnail of Effect of oxygen annealing on the Mn2+ properties in ZnMnO Films

Journal of Magnetism and Magnetic Materials, 2007

We studied the influence of thermal annealing in oxygen on the physical properties of MOCVD grown... more We studied the influence of thermal annealing in oxygen on the physical properties of MOCVD grown Zn 1Àx Mn x O thin layers. Annealing in the 300-1000 1C temperature range modifies both lattice parameters and magnetic properties of the layers. Correlation of the results from X-ray diffraction, EPR studies and Raman spectroscopy indicate a modification of the Mn +2 -related features in the ZnO matrix. r

Research paper thumbnail of Optical investigation of micrometer and nanometer-size individual GaN pillars fabricated by reactive ion etching

Journal of Applied Physics, 2002

We present an optical investigation of GaN pillars using both micro-Raman ͑-Raman͒ and microphoto... more We present an optical investigation of GaN pillars using both micro-Raman ͑-Raman͒ and microphotoluminescence ͑-PL͒ spectroscopy. GaN pillars of diameter ranging from 100 nm to 5 m were fabricated by electron beam lithography and reactive ion etching ͑RIE͒ with SiCl 4 plasma. Optical measurements of both -Raman and -PL on individual pillars show consistent variations in the properties of the fabricated GaN structures as a function of GaN pillar size. -PL mapping gives strong evidence for defect-induced donors and/or acceptors near the facets of the RIE etched pillars. RIE for the nanostructuration of GaN could be used in the future to allow spectroscopic studies of a few or single quantum objects such as GaN quantum dots.

Research paper thumbnail of Signature of GaN–AlN quantum dots by nonresonant Raman scattering

Applied Physics Letters, 2000

Negative photoconductivity due to intraband transitions in GaN/AlN quantum dots Polarized emissio... more Negative photoconductivity due to intraband transitions in GaN/AlN quantum dots Polarized emission from GaN/AlN quantum dots subject to uniaxial thermal interfacial stresses J. Vac. Sci. Technol. B 28, C5E25 (2010); 10.1116/1.3435325 Effects of stacking on the structural and optical properties of self-organized GaN/AlN quantum dots