Jagmohan Bajaj - Academia.edu (original) (raw)

Papers by Jagmohan Bajaj

Research paper thumbnail of Disorder-Induced Degradation of Vertical Carrier Transport in Strain-Balanced Antimony-Based Superlattices

Physical review applied, Nov 15, 2021

Research paper thumbnail of Understanding Fundamental Material Limitations to Enable Advanced Detector Design

This work presents the activities of the Center for Semiconductor Modelling in the area of infrar... more This work presents the activities of the Center for Semiconductor Modelling in the area of infrared imaging devices. We outline a methodology that enables the study of large scale infrared detector arrays to quantify their optical and electrical performance. Furthermore, we present an approach to investigate the quantum mechanical transport properties of superlattice based detectors that are an emerging technology with potential applications both in commercial and defense system.

Research paper thumbnail of Study of temperature dependent carrier transport in Ga free T2SL photodetectors and its impact on performance

Research paper thumbnail of Center for Semiconductor Modeling (CSM) – Accelerating Technology Development through Understanding Fundamental and Technology Limitations in Materials and Devices

2022 IEEE Research and Applications of Photonics in Defense Conference (RAPID)

Research paper thumbnail of HgCdTe Growth and Detector Technology

II-VI Semiconductor Materials and Their Applications, 2018

Research paper thumbnail of Quantized Hall effect and weak localization effects in two‐dimensional HgTe–CdTe superlattices

Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 1987

Electronic transport in the two‐dimensional gas formed in superlattices of HgTe–CdTe has been inv... more Electronic transport in the two‐dimensional gas formed in superlattices of HgTe–CdTe has been investigated in both the weak‐field (B<4 mT) and the intense‐field regime (up to 29 T). We find that in high‐mobility samples (53 000 cm2/V s) coherent backscattering effects (weak localization) are easily observable in the first regime while in the second regime quantized Hall steps are obtained in the same sample. The weak localization results have been exploited to obtain the temperature dependence of the electron dephasing rate and the spin–orbit scattering rate. Unlike AlGaAs–GaAs and Si–metal–oxide semiconductor field‐effect transistor systems the spin–orbit scattering rate is very large (0.6 times the elastic scattering rate.) The quantized Hall‐effect data are complicated by three factors which we discuss. These complications prevent an unambiguous interpretation at present, although differences from the AlGaAs–GaAs superlattice results are observed.

Research paper thumbnail of Molecular beam epitaxy HgCdTe growth-induced void defects and their effect on infrared photodiodes

Journal of Electronic Materials, 1995

... and 5. The LWIR HgCdTe heterostructures used to fabricate devices in this studywere grownonne... more ... and 5. The LWIR HgCdTe heterostructures used to fabricate devices in this studywere grownonnear lattice-matched ... 125 and 500 x 500 pm2) diodes were made with HgCdTe material with lowand high void defect concentrations to test their effect on device performance. ...

Research paper thumbnail of Experimental Evidence for Phase Separation of a Two-Component Electron-Hole Liquid in 〈 111 〉 -Stressed Ge

Physical Review Letters, 1981

Experimental Evidence for Phase Separation of a Two-Component Electron-Hole Liquid in 〈111〉-Stres... more Experimental Evidence for Phase Separation of a Two-Component Electron-Hole Liquid in 〈111〉-Stressed Ge. J. Bajaj, Fei-Ming Tong * , and George K. Wong Department of Physics and Astronomy and Materials Research ...

Research paper thumbnail of Spatially resolved characterization of HgCdTe materials and devices by scanning laser microscopy

Semiconductor Science and Technology, 1993

... I HgCdTe materials and devices by I scanning laser microscopy J Bajaj, WE Tennant, R Zucca an... more ... I HgCdTe materials and devices by I scanning laser microscopy J Bajaj, WE Tennant, R Zucca and SJC lrvine Rockweii international Science Center, Thousand Oaks, CA 91360, USA Abstract. ... bine, either non-radiatively (usually involving deep defect ...

Research paper thumbnail of <title>Recent progress of hybrid CMOS visible focal plane array technology</title>

Focal Plane Arrays for Space Telescopes II, 2005

Silicon-based hybrid CMOS visible focal plane array technology is emerging as a viable high perfo... more Silicon-based hybrid CMOS visible focal plane array technology is emerging as a viable high performance alternative to scientific CCDs. The progress is attributed to the rapid advances in CMOS technology, mature precision flip-chip hybridization of large size and fine pixel arrays, and detector array performance improvements. Its technology readiness level (TRL) for space applications is being enhanced by relevant environmental tests and in-depth characterization of sensor performance. In this paper, we present recent results of Rockwell Scientific's hybrid CMOS silicon focal plane array technology, including large format arrays up to 2048x2048, broadband QE, sensor noise improvement, high radiation hardness, and the higher degree of system integration through on-chip ADCs and companion ASICs.

Research paper thumbnail of Origin of void defects in Hg1−xCdxTe grown by molecular beam epitaxy

Journal of Electronic Materials, 1995

Characterization of defects in Hg1−xCdxTe compound semiconductor is essential to reduce intrinsic... more Characterization of defects in Hg1−xCdxTe compound semiconductor is essential to reduce intrinsic and the growth-induced extended defects which adversely affect the performance of devices fabricated in this material system. It is shown here that particulates at the substrate surface act as sites where void defects nucleate during Hg1−xCdxTe epitaxial growth by molecular beam epitaxy. In this study, we have investigated

Research paper thumbnail of Characterization of CdTe for HgCdTe surface passivation

Journal of Electronic Materials, 1995

The objectives of this work are to study the physical and chemical structure of CdTe films using ... more The objectives of this work are to study the physical and chemical structure of CdTe films using secondary ion mass spectrometry (SIMS) and atomic force miroscopy (AFM) and to demonstrate the usefulness of these analytical techniques in determining the characteristics of CdTe-passivation films deposited by different techniques on HgCdTe material. Three key aspects of CdTe passivation of HgCdTe are addressed

Research paper thumbnail of Molecular beam epitaxy grown long wavelength infrared HgCdTe on Si detector performance

Journal of Electronic Materials, 2005

The use of silicon as a substrate alternative to bulk CdZnTe for epitaxial growth of HgCdTe for i... more The use of silicon as a substrate alternative to bulk CdZnTe for epitaxial growth of HgCdTe for infrared (IR) detector applications is attractive because of potential cost savings as a result of the large available sizes and the relatively low cost of silicon substrates. However, the potential benefits of silicon as a substrate have been difficult to realize because of the technical challenges of growing low defect density HgCdTe on silicon where the lattice mismatch is ϳ19%. This is especially true for LWIR HgCdTe detectors where the performance can be limited by the high (ϳ5 ϫ 10 6 cm Ϫ2) dislocation density typically found in HgCdTe grown on silicon. We have fabricated a series of long wavelength infrared (LWIR) HgCdTe diodes and several LWIR focal plane arrays (FPAs) with HgCdTe grown on silicon substrates using MBE grown CdTe and CdSeTe buffer layers. The detector arrays were fabricated using Rockwell Scientific's planar diode architecture. The diode and FPA and results at 78 K will be discussed in terms of the high dislocation density (ϳ5 ϫ 10 6 cm 2) typically measured when HgCdTe is grown on silicon substrates.

Research paper thumbnail of MBE HgCdTe infrared focal plane array (IRFPA) flexible manufacturing

Proceedings of SPIE - The International Society for Optical Engineering

Extensive material and device statistics of performance and reproducibility are presented to show... more Extensive material and device statistics of performance and reproducibility are presented to show the maturity of this technology. The demonstration vehicles to monitor yields during this demonstration were long-wavelength infrared (LWIR) HgCdTe multilayer wafers with 128 X 128 detector arrays. The heterostructure photodetectors were of the p-on-n planar configuration. Device data show that MBE LWIR diode test structures have performance that equals that of p-on-n double heterostructure photodiodes made by LPE. Due to the special attention given to understanding and reducing epilayer growth-induced defects, we have achieved improvements in FPA operability values from 92% to 98%. These improvements have resulted in the demonstration of a 128 X 128 FPA hybrid that had detectivity (D*) background limited performance when operating at 80 K in a tactical background environment. Mean D* was 1.28 X 10(superscript 11) cmHz(superscript 1/2)/W. The corresponding mean NE(Delta) T was an excell...

Research paper thumbnail of <title>Molecular beam epitaxy (MBE) HgCdTe flexible growth technology for the manufacturing of infrared photovoltaic detectors</title>

Producibility of II-VI Materials and Devices, 1994

ABSTRACT In this paper we present p-on-n heterostructure HgCdTe photovoltaic device data that ill... more ABSTRACT In this paper we present p-on-n heterostructure HgCdTe photovoltaic device data that illustrates the high performance and flexibility in band gap control of the molecular beam epitaxy (MBE) technology. This flexibility demonstration was carried out by growing material for operation in the following cut-off wavelength ((lambda) co) ranges of interest: LWIR [(lambda) co(77 K) equals 9-11 micrometers ], MLWIR [(lambda) co(77 K) equals 6-7 micrometers ], and VLWIR [(lambda) co(40 K) equals 20 micrometers ]. Detailed analyses of the current-voltage characteristics of these diodes as a function of temperature show that their dark currents are diffusion-limited down to 80 K, 50 K, and 30 K for the MLWIR, LWIR, and VLWIR photodiodes, respectively. In general, the RoA device values were uniform for the three band gap ranges when operating under diffusion limited conditions. The planar MBE HgCdTe technology has been further validated with the successful fabrication and operation of 64 X 64 hybrid FPAs.

Research paper thumbnail of Movpe Growth of MCT for LWIR Detectors

MRS Proceedings, 1994

Recent progress in the growth of Hg1−xCdxTe (MCT) by metal organic vapor phase epitaxy (MOVPE) is... more Recent progress in the growth of Hg1−xCdxTe (MCT) by metal organic vapor phase epitaxy (MOVPE) is reviewed. The preferred diode structure for LWIR detectors is the p/n heterostructure, which requires extrinsic doping of both n and p-type layers and good compositional control of the base and cap layers. Uniform n-type doping has been demonstrated using a new precursor, TIPIn, with Auger-limited lifetime down to a doping concentration of 1 × 1015 cm−3. p-type doping has been more difficult to control because Group V dopants can occupy either Group II or Group VI sites, leading to autodoping. Some encouraging progress has been made by doping under metal rich conditions. An alternative approach to p-type doping during growth is the Rockwell-developed process of As implantation, diffusion and activation annealing, which has been used to demonstrate near diffusion-limited LWIR diodes at 77K. Major strides in the reproducibility of the MOVPE process have been achieved by in situ monitoring...

Research paper thumbnail of Uniform low defect density molecular beam epitaxial HgCdTe

Journal of Electronic Materials, 1996

This paper describes recent advances in MBE HgCdTe technology. A new 3 inch production molecular ... more This paper describes recent advances in MBE HgCdTe technology. A new 3 inch production molecular beam epitaxy (MBE) system, Riber Model 32P, was installed at Rockwell in 1994. The growth technology developed over the years at Rockwell using the Riber 2300 R&amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;D system was transferred to the 32P system in less than six months. This short period of technology transfer

Research paper thumbnail of Junction depth measurement in HgCdTe using laser beam induced current (LBIC)

Journal of Electronic Materials, 1999

Research paper thumbnail of Understanding fundamental limitations of materials to enable advanced design

Future and advanced sensor technologies needed for DoD applications will require more efficient s... more Future and advanced sensor technologies needed for DoD applications will require more efficient semiconductor materials and devices. Pushing sensor device performance beyond present levels requires a deep understanding of the fundamental limiters. Therefore fundamental research is needed to assure transition of technology from demonstration to system deployment. To address this problem, the Army Research Laboratory (ARL) and Boston University (BU) have come together to create a BU led Consortium for semiconductor Modeling of Materials and Devices (CSM). The Consortium brings together government, academia, and industry in a collaborative fashion to continuously push semiconductor research forward to meet DoD needs. The leveraged attributes of the Consortium include combined broad knowledge base in semiconductor modeling, materials growth and device expertise; sharing of computational resources; project continuity; and extension of the bench. Details regarding the Consortium’s first r...

Research paper thumbnail of FPAs and thin film binary optic microlens integration

Proceedings of …, 1996

FPAs and thin film binary optic microlens integration. [Proceedings of SPIE 2687, 70 (1996)]. M. ... more FPAs and thin film binary optic microlens integration. [Proceedings of SPIE 2687, 70 (1996)]. M. Edward Motamedi, William E. Tennant, Robert Melendes, Natalie S. Gluck, Sangtae Park, Jose M. Arias, Jagmohan Bajaj, John ...

Research paper thumbnail of Disorder-Induced Degradation of Vertical Carrier Transport in Strain-Balanced Antimony-Based Superlattices

Physical review applied, Nov 15, 2021

Research paper thumbnail of Understanding Fundamental Material Limitations to Enable Advanced Detector Design

This work presents the activities of the Center for Semiconductor Modelling in the area of infrar... more This work presents the activities of the Center for Semiconductor Modelling in the area of infrared imaging devices. We outline a methodology that enables the study of large scale infrared detector arrays to quantify their optical and electrical performance. Furthermore, we present an approach to investigate the quantum mechanical transport properties of superlattice based detectors that are an emerging technology with potential applications both in commercial and defense system.

Research paper thumbnail of Study of temperature dependent carrier transport in Ga free T2SL photodetectors and its impact on performance

Research paper thumbnail of Center for Semiconductor Modeling (CSM) – Accelerating Technology Development through Understanding Fundamental and Technology Limitations in Materials and Devices

2022 IEEE Research and Applications of Photonics in Defense Conference (RAPID)

Research paper thumbnail of HgCdTe Growth and Detector Technology

II-VI Semiconductor Materials and Their Applications, 2018

Research paper thumbnail of Quantized Hall effect and weak localization effects in two‐dimensional HgTe–CdTe superlattices

Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 1987

Electronic transport in the two‐dimensional gas formed in superlattices of HgTe–CdTe has been inv... more Electronic transport in the two‐dimensional gas formed in superlattices of HgTe–CdTe has been investigated in both the weak‐field (B<4 mT) and the intense‐field regime (up to 29 T). We find that in high‐mobility samples (53 000 cm2/V s) coherent backscattering effects (weak localization) are easily observable in the first regime while in the second regime quantized Hall steps are obtained in the same sample. The weak localization results have been exploited to obtain the temperature dependence of the electron dephasing rate and the spin–orbit scattering rate. Unlike AlGaAs–GaAs and Si–metal–oxide semiconductor field‐effect transistor systems the spin–orbit scattering rate is very large (0.6 times the elastic scattering rate.) The quantized Hall‐effect data are complicated by three factors which we discuss. These complications prevent an unambiguous interpretation at present, although differences from the AlGaAs–GaAs superlattice results are observed.

Research paper thumbnail of Molecular beam epitaxy HgCdTe growth-induced void defects and their effect on infrared photodiodes

Journal of Electronic Materials, 1995

... and 5. The LWIR HgCdTe heterostructures used to fabricate devices in this studywere grownonne... more ... and 5. The LWIR HgCdTe heterostructures used to fabricate devices in this studywere grownonnear lattice-matched ... 125 and 500 x 500 pm2) diodes were made with HgCdTe material with lowand high void defect concentrations to test their effect on device performance. ...

Research paper thumbnail of Experimental Evidence for Phase Separation of a Two-Component Electron-Hole Liquid in 〈 111 〉 -Stressed Ge

Physical Review Letters, 1981

Experimental Evidence for Phase Separation of a Two-Component Electron-Hole Liquid in 〈111〉-Stres... more Experimental Evidence for Phase Separation of a Two-Component Electron-Hole Liquid in 〈111〉-Stressed Ge. J. Bajaj, Fei-Ming Tong * , and George K. Wong Department of Physics and Astronomy and Materials Research ...

Research paper thumbnail of Spatially resolved characterization of HgCdTe materials and devices by scanning laser microscopy

Semiconductor Science and Technology, 1993

... I HgCdTe materials and devices by I scanning laser microscopy J Bajaj, WE Tennant, R Zucca an... more ... I HgCdTe materials and devices by I scanning laser microscopy J Bajaj, WE Tennant, R Zucca and SJC lrvine Rockweii international Science Center, Thousand Oaks, CA 91360, USA Abstract. ... bine, either non-radiatively (usually involving deep defect ...

Research paper thumbnail of <title>Recent progress of hybrid CMOS visible focal plane array technology</title>

Focal Plane Arrays for Space Telescopes II, 2005

Silicon-based hybrid CMOS visible focal plane array technology is emerging as a viable high perfo... more Silicon-based hybrid CMOS visible focal plane array technology is emerging as a viable high performance alternative to scientific CCDs. The progress is attributed to the rapid advances in CMOS technology, mature precision flip-chip hybridization of large size and fine pixel arrays, and detector array performance improvements. Its technology readiness level (TRL) for space applications is being enhanced by relevant environmental tests and in-depth characterization of sensor performance. In this paper, we present recent results of Rockwell Scientific's hybrid CMOS silicon focal plane array technology, including large format arrays up to 2048x2048, broadband QE, sensor noise improvement, high radiation hardness, and the higher degree of system integration through on-chip ADCs and companion ASICs.

Research paper thumbnail of Origin of void defects in Hg1−xCdxTe grown by molecular beam epitaxy

Journal of Electronic Materials, 1995

Characterization of defects in Hg1−xCdxTe compound semiconductor is essential to reduce intrinsic... more Characterization of defects in Hg1−xCdxTe compound semiconductor is essential to reduce intrinsic and the growth-induced extended defects which adversely affect the performance of devices fabricated in this material system. It is shown here that particulates at the substrate surface act as sites where void defects nucleate during Hg1−xCdxTe epitaxial growth by molecular beam epitaxy. In this study, we have investigated

Research paper thumbnail of Characterization of CdTe for HgCdTe surface passivation

Journal of Electronic Materials, 1995

The objectives of this work are to study the physical and chemical structure of CdTe films using ... more The objectives of this work are to study the physical and chemical structure of CdTe films using secondary ion mass spectrometry (SIMS) and atomic force miroscopy (AFM) and to demonstrate the usefulness of these analytical techniques in determining the characteristics of CdTe-passivation films deposited by different techniques on HgCdTe material. Three key aspects of CdTe passivation of HgCdTe are addressed

Research paper thumbnail of Molecular beam epitaxy grown long wavelength infrared HgCdTe on Si detector performance

Journal of Electronic Materials, 2005

The use of silicon as a substrate alternative to bulk CdZnTe for epitaxial growth of HgCdTe for i... more The use of silicon as a substrate alternative to bulk CdZnTe for epitaxial growth of HgCdTe for infrared (IR) detector applications is attractive because of potential cost savings as a result of the large available sizes and the relatively low cost of silicon substrates. However, the potential benefits of silicon as a substrate have been difficult to realize because of the technical challenges of growing low defect density HgCdTe on silicon where the lattice mismatch is ϳ19%. This is especially true for LWIR HgCdTe detectors where the performance can be limited by the high (ϳ5 ϫ 10 6 cm Ϫ2) dislocation density typically found in HgCdTe grown on silicon. We have fabricated a series of long wavelength infrared (LWIR) HgCdTe diodes and several LWIR focal plane arrays (FPAs) with HgCdTe grown on silicon substrates using MBE grown CdTe and CdSeTe buffer layers. The detector arrays were fabricated using Rockwell Scientific's planar diode architecture. The diode and FPA and results at 78 K will be discussed in terms of the high dislocation density (ϳ5 ϫ 10 6 cm 2) typically measured when HgCdTe is grown on silicon substrates.

Research paper thumbnail of MBE HgCdTe infrared focal plane array (IRFPA) flexible manufacturing

Proceedings of SPIE - The International Society for Optical Engineering

Extensive material and device statistics of performance and reproducibility are presented to show... more Extensive material and device statistics of performance and reproducibility are presented to show the maturity of this technology. The demonstration vehicles to monitor yields during this demonstration were long-wavelength infrared (LWIR) HgCdTe multilayer wafers with 128 X 128 detector arrays. The heterostructure photodetectors were of the p-on-n planar configuration. Device data show that MBE LWIR diode test structures have performance that equals that of p-on-n double heterostructure photodiodes made by LPE. Due to the special attention given to understanding and reducing epilayer growth-induced defects, we have achieved improvements in FPA operability values from 92% to 98%. These improvements have resulted in the demonstration of a 128 X 128 FPA hybrid that had detectivity (D*) background limited performance when operating at 80 K in a tactical background environment. Mean D* was 1.28 X 10(superscript 11) cmHz(superscript 1/2)/W. The corresponding mean NE(Delta) T was an excell...

Research paper thumbnail of <title>Molecular beam epitaxy (MBE) HgCdTe flexible growth technology for the manufacturing of infrared photovoltaic detectors</title>

Producibility of II-VI Materials and Devices, 1994

ABSTRACT In this paper we present p-on-n heterostructure HgCdTe photovoltaic device data that ill... more ABSTRACT In this paper we present p-on-n heterostructure HgCdTe photovoltaic device data that illustrates the high performance and flexibility in band gap control of the molecular beam epitaxy (MBE) technology. This flexibility demonstration was carried out by growing material for operation in the following cut-off wavelength ((lambda) co) ranges of interest: LWIR [(lambda) co(77 K) equals 9-11 micrometers ], MLWIR [(lambda) co(77 K) equals 6-7 micrometers ], and VLWIR [(lambda) co(40 K) equals 20 micrometers ]. Detailed analyses of the current-voltage characteristics of these diodes as a function of temperature show that their dark currents are diffusion-limited down to 80 K, 50 K, and 30 K for the MLWIR, LWIR, and VLWIR photodiodes, respectively. In general, the RoA device values were uniform for the three band gap ranges when operating under diffusion limited conditions. The planar MBE HgCdTe technology has been further validated with the successful fabrication and operation of 64 X 64 hybrid FPAs.

Research paper thumbnail of Movpe Growth of MCT for LWIR Detectors

MRS Proceedings, 1994

Recent progress in the growth of Hg1−xCdxTe (MCT) by metal organic vapor phase epitaxy (MOVPE) is... more Recent progress in the growth of Hg1−xCdxTe (MCT) by metal organic vapor phase epitaxy (MOVPE) is reviewed. The preferred diode structure for LWIR detectors is the p/n heterostructure, which requires extrinsic doping of both n and p-type layers and good compositional control of the base and cap layers. Uniform n-type doping has been demonstrated using a new precursor, TIPIn, with Auger-limited lifetime down to a doping concentration of 1 × 1015 cm−3. p-type doping has been more difficult to control because Group V dopants can occupy either Group II or Group VI sites, leading to autodoping. Some encouraging progress has been made by doping under metal rich conditions. An alternative approach to p-type doping during growth is the Rockwell-developed process of As implantation, diffusion and activation annealing, which has been used to demonstrate near diffusion-limited LWIR diodes at 77K. Major strides in the reproducibility of the MOVPE process have been achieved by in situ monitoring...

Research paper thumbnail of Uniform low defect density molecular beam epitaxial HgCdTe

Journal of Electronic Materials, 1996

This paper describes recent advances in MBE HgCdTe technology. A new 3 inch production molecular ... more This paper describes recent advances in MBE HgCdTe technology. A new 3 inch production molecular beam epitaxy (MBE) system, Riber Model 32P, was installed at Rockwell in 1994. The growth technology developed over the years at Rockwell using the Riber 2300 R&amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;amp;D system was transferred to the 32P system in less than six months. This short period of technology transfer

Research paper thumbnail of Junction depth measurement in HgCdTe using laser beam induced current (LBIC)

Journal of Electronic Materials, 1999

Research paper thumbnail of Understanding fundamental limitations of materials to enable advanced design

Future and advanced sensor technologies needed for DoD applications will require more efficient s... more Future and advanced sensor technologies needed for DoD applications will require more efficient semiconductor materials and devices. Pushing sensor device performance beyond present levels requires a deep understanding of the fundamental limiters. Therefore fundamental research is needed to assure transition of technology from demonstration to system deployment. To address this problem, the Army Research Laboratory (ARL) and Boston University (BU) have come together to create a BU led Consortium for semiconductor Modeling of Materials and Devices (CSM). The Consortium brings together government, academia, and industry in a collaborative fashion to continuously push semiconductor research forward to meet DoD needs. The leveraged attributes of the Consortium include combined broad knowledge base in semiconductor modeling, materials growth and device expertise; sharing of computational resources; project continuity; and extension of the bench. Details regarding the Consortium’s first r...

Research paper thumbnail of FPAs and thin film binary optic microlens integration

Proceedings of …, 1996

FPAs and thin film binary optic microlens integration. [Proceedings of SPIE 2687, 70 (1996)]. M. ... more FPAs and thin film binary optic microlens integration. [Proceedings of SPIE 2687, 70 (1996)]. M. Edward Motamedi, William E. Tennant, Robert Melendes, Natalie S. Gluck, Sangtae Park, Jose M. Arias, Jagmohan Bajaj, John ...