James Clarkson - Academia.edu (original) (raw)

Papers by James Clarkson

Microscopy and Microanalysis, 2018

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Nature communications, Sep 21, 2018

Electric-field control of magnetism requires deterministic control of the magnetic order and unde... more Electric-field control of magnetism requires deterministic control of the magnetic order and understanding of the magnetoelectric coupling in multiferroics like BiFeO and EuTiO. Despite this critical need, there are few studies on the strain evolution of magnetic order in BiFeO films. Here, in (110)-oriented BiFeO films, we reveal that while the polarization structure remains relatively unaffected, strain can continuously tune the orientation of the antiferromagnetic-spin axis across a wide angular space, resulting in an unexpected deviation of the classical perpendicular relationship between the antiferromagnetic axis and the polarization. Calculations suggest that this evolution arises from a competition between the Dzyaloshinskii-Moriya interaction and single-ion anisotropy wherein the former dominates at small strains and the two are comparable at large strains. Finally, strong coupling between the BiFeO and the ferromagnet CoFe exists such that the magnetic anisotropy of the fe...

Scientific reports, Jan 13, 2017

The ability to control a magnetic phase with an electric field is of great current interest for a... more The ability to control a magnetic phase with an electric field is of great current interest for a variety of low power electronics in which the magnetic state is used either for information storage or logic operations. Over the past several years, there has been a considerable amount of research on pathways to control the direction of magnetization with an electric field. More recently, an alternative pathway involving the change of the magnetic state (ferromagnet to antiferromagnet) has been proposed. In this paper, we demonstrate electric field control of the Anomalous Hall Transport in a metamagnetic FeRh thin film, accompanying an antiferromagnet (AFM) to ferromagnet (FM) phase transition. This approach provides us with a pathway to "hide" or "reveal" a given ferromagnetic region at zero magnetic field. By converting the AFM phase into the FM phase, the stray field, and hence sensitivity to external fields, is decreased or eliminated. Using detailed structura...

Nature, Sep 21, 2016

Materials that exhibit simultaneous order in their electric and magnetic ground states hold promi... more Materials that exhibit simultaneous order in their electric and magnetic ground states hold promise for use in next-generation memory devices in which electric fields control magnetism. Such materials are exceedingly rare, however, owing to competing requirements for displacive ferroelectricity and magnetism. Despite the recent identification of several new multiferroic materials and magnetoelectric coupling mechanisms, known single-phase multiferroics remain limited by antiferromagnetic or weak ferromagnetic alignments, by a lack of coupling between the order parameters, or by having properties that emerge only well below room temperature, precluding device applications. Here we present a methodology for constructing single-phase multiferroic materials in which ferroelectricity and strong magnetic ordering are coupled near room temperature. Starting with hexagonal LuFeO3-the geometric ferroelectric with the greatest known planar rumpling-we introduce individual monolayers of FeO du...

Advanced materials (Deerfield Beach, Fla.), Jan 19, 2016

Ferroelectrically driven nonvolatile memory is demonstrated by interfacing 2D semiconductors and ... more Ferroelectrically driven nonvolatile memory is demonstrated by interfacing 2D semiconductors and ferroelectric thin films, exhibiting superior memory performance comparable to existing thin-film ferroelectric field-effect transistors. An optical memory effect is also observed with large modulation of photoluminescence tuned by the ferroelectric gating, potentially finding applications in optoelectronics and valleytronics.

Nature communications, Jan 8, 2016

Single-crystalline thin films of complex oxides show a rich variety of functional properties such... more Single-crystalline thin films of complex oxides show a rich variety of functional properties such as ferroelectricity, piezoelectricity, ferro and antiferromagnetism and so on that have the potential for completely new electronic applications. Direct synthesis of such oxides on silicon remains challenging because of the fundamental crystal chemistry and mechanical incompatibility of dissimilar interfaces. Here we report integration of thin (down to one unit cell) single crystalline, complex oxide films onto silicon substrates, by epitaxial transfer at room temperature. In a field-effect transistor using a transferred lead zirconate titanate layer as the gate insulator, we demonstrate direct reversible control of the semiconductor channel charge with polarization state. These results represent the realization of long pursued but yet to be demonstrated single-crystal functional oxides on-demand on silicon.

Physical Review Letters, 2015

Biophysical Journal, 2014

[18F]fluoro-deoxyglucose (FDG) in single cells, which was found consistent with fluorescence imag... more [18F]fluoro-deoxyglucose (FDG) in single cells, which was found consistent with fluorescence imaging of a glucose analog. We also verified that dynamic uptake of FDG in single cells followed the standard two-tissue compartmental model. A difference in FDG uptake rates using single-cell analysis versus bulk cell analysis revealed that radioluminescence microscopy is an important tool to investigate single-cell biology. Biological studies at the single-cell level aim at elucidating the effect of the cell cycle on the FDG uptake in breast cancer cell populations. These experiments can also find metabolic differences to determine subpopulations in clonal cell populations.

Nano letters, Jan 11, 2017

A wealth of fascinating phenomena have been discovered at the BiFeO3 domain walls, examples such ... more A wealth of fascinating phenomena have been discovered at the BiFeO3 domain walls, examples such as domain wall conductivity, photovoltaic effects, and magnetoelectric coupling. Thus, the ability to precisely control the domain structures and accurately study their switching behaviors is critical to realize the next generation of novel devices based on domain wall functionalities. In this work, the introduction of a dielectric layer leads to the tunability of the depolarization field both in the multilayers and superlattices, which provides a novel approach to control the domain patterns of BiFeO3 films. Moreover, we are able to study the switching behavior of the first time obtained periodic 109° stripe domains with a thick bottom electrode. Besides, the precise controlling of pure 71° and 109° periodic stripe domain walls enable us to make a clear demonstration that the exchange bias in the ferromagnet/BiFeO3 system originates from 109° domain walls. Our findings provide future di...

Proceedings of the National Academy of Sciences of the United States of America, Jan 19, 2016

Magnetic anisotropy (MA) is one of the most important material properties for modern spintronic d... more Magnetic anisotropy (MA) is one of the most important material properties for modern spintronic devices. Conventional manipulation of the intrinsic MA, i.e., magnetocrystalline anisotropy (MCA), typically depends upon crystal symmetry. Extrinsic control over the MA is usually achieved by introducing shape anisotropy or exchange bias from another magnetically ordered material. Here we demonstrate a pathway to manipulate MA of 3d transition-metal oxides (TMOs) by digitally inserting nonmagnetic 5d TMOs with pronounced spin-orbit coupling (SOC). High-quality superlattices comprising ferromagnetic La2/3Sr1/3MnO3 (LSMO) and paramagnetic SrIrO3 (SIO) are synthesized with the precise control of thickness at the atomic scale. Magnetic easy-axis reorientation is observed by controlling the dimensionality of SIO, mediated through the emergence of a novel spin-orbit state within the nominally paramagnetic SIO.