Jan Chroboczek - Academia.edu (original) (raw)

Papers by Jan Chroboczek

Thesis Purdue University 1968 Source Dissertation Abstracts International Volume 29 10 Section B Page 3881, 1968

Electron Devices, …, 1999

Abstract— A 200-mm 0.35-m silicon–germanium hetero-junction bipolar transistor (SiGe HBT) technol... more Abstract— A 200-mm 0.35-m silicon–germanium hetero-junction bipolar transistor (SiGe HBT) technology involving epitaxially-aligned polysilicon emitters is described. The devices are shown to combine the high speed performances typical for poly-Si emitter SiGe base ...

Journal of Magnetism and Magnetic Materials, 1992

ABSTRACT

Noise in Devices and Circuits II, 2004

Low frequency noise, LFN, was studied in three sets of n-MOSFETs, with silicon nano-crystals, Si-... more Low frequency noise, LFN, was studied in three sets of n-MOSFETs, with silicon nano-crystals, Si-nc's, imbedded in the gate oxide, in planar layers placed at distances tnc=1.2, 1.5, and 2nm from the Si/SiO2 interface. The power spectral density of the drain current, Id, fluctuations, SId(f), was measured on the devices with the Si-nc's and without (reference samples). SId(f) measured on

Journal of Applied Physics, 1997

ABSTRACT The effects of electrical stress on static characteristics and power spectral density, S... more ABSTRACT The effects of electrical stress on static characteristics and power spectral density, SIb, of base current, Ib, fluctuations at low frequencies, f<1 kHz, have been studied in quasiself-aligned bipolar n-p-n junction. In as-fabricated devices SIb∝1/AE, where AE is the transistor emitter area, whereas in strongly degraded transistors Sib∝1/PE, where PE is the transistor perimeter. The latter demonstrates directly that hot carrier-induced noise sources are generated at the periphery of the transistors, in agreement with former work on hot electron-induced aging of bipolar junction transistors. © 1997 American Institute of Physics.

Journal of Physics E: Scientific Instruments, 1985

Physical Review, 1968

ABSTRACT Separata de: Physical Review.169, pp. 593-602,1968

Solid State Communications, 1976

Physics Letters A, 1967

ABSTRACT The magnetoresistance varrho/varrhoo of phonon-assisted hop conduction in n-type Ge is f... more ABSTRACT The magnetoresistance varrho/varrhoo of phonon-assisted hop conduction in n-type Ge is found to have an appreciable temperature dependence at high magnetic fields. Reversal of spins of electrons while they make interdonor transitions is shown to be responsible.

Journal of Physics C: Solid State Physics, 1980

Approximate wavefunctions and energies of the ground state of the shallow acceptor in Ge were obt... more Approximate wavefunctions and energies of the ground state of the shallow acceptor in Ge were obtained by solving the effective mass equation possessing terms proportional to the deformation tensor components. The variational approach was used involving trial wavefunctions similar to those of D Schechter, but possessing transformation properties required by the symmetry of the uniaxially deformed crystal. Results were obtained

Journal of Physics C: Solid State Physics, 1983

Surfaces representing the loci of points of which psi *(r) psi (r) = psi *(O) psi (O)exp(-2r/a), ... more Surfaces representing the loci of points of which psi *(r) psi (r) = psi *(O) psi (O)exp(-2r/a), where psi (r) are the wavefunctions of the components of the acceptor ground state in Ge, and a is the average Bohr radius of the acceptor ground state, are presented for several values of the uniaxial stress applied in the (001) orientation. The value of r/a was selected to be equal to 5 and consequently the surfaces give the location in space of points where the tunnelling probability to the point at the origin is equal and sufficiently small to represent the phonon-assisted hopping transitions. The authors demonstrate that the surface of constant tunnelling probability are deformed by the stress in a manner consistent with the assumptions involved in the model of piezoresistance of hopping conduction in p-type germanium formerly proposed by Chroboczek et al. (1981).

Journal of Physics C: Solid State Physics, 1979

ABSTRACT A strong line was observed in the far-infrared absorption spectrum of linearly polarized... more ABSTRACT A strong line was observed in the far-infrared absorption spectrum of linearly polarized light with E perpendicular to B and E//B in n-type HgTe in the Voigt configuration. Since the selection rules exclude plasma-shifted cyclotron resonance absorption for E//B, it is postulated that the transition involves a resonant acceptor state and a Landau level of the continuum.

Philosophical Magazine Letters, 1987

Physical Review Letters, 1991

... 11 FEBRUARY 1991 Magnetic and Magnetotransport Properties of Erbium SilicideEpitaxial Films J... more ... 11 FEBRUARY 1991 Magnetic and Magnetotransport Properties of Erbium SilicideEpitaxial Films J. A. Chroboczek, ' A. Briggs, W. Joss, S. AufI'ret, and J.Pierre " Centre 1Vational d'Etudes des Telecommunications, ... p p to h' for the ma e parameters have b are given in ...

Physica B: Condensed Matter, 1990

Neutron diffraction experiments have been performed on Er3Si5 silicide. The crystallographic stru... more Neutron diffraction experiments have been performed on Er3Si5 silicide. The crystallographic structure of this compound is orthorhombic, the magnetic structure is non-collinear. Magnetic measurements on a single crystal and a thin epitaxial layer give very similar results, in agreement with neutron data.

Thesis Purdue University 1968 Source Dissertation Abstracts International Volume 29 10 Section B Page 3881, 1968

Electron Devices, …, 1999

Abstract— A 200-mm 0.35-m silicon–germanium hetero-junction bipolar transistor (SiGe HBT) technol... more Abstract— A 200-mm 0.35-m silicon–germanium hetero-junction bipolar transistor (SiGe HBT) technology involving epitaxially-aligned polysilicon emitters is described. The devices are shown to combine the high speed performances typical for poly-Si emitter SiGe base ...

Journal of Magnetism and Magnetic Materials, 1992

ABSTRACT

Noise in Devices and Circuits II, 2004

Low frequency noise, LFN, was studied in three sets of n-MOSFETs, with silicon nano-crystals, Si-... more Low frequency noise, LFN, was studied in three sets of n-MOSFETs, with silicon nano-crystals, Si-nc's, imbedded in the gate oxide, in planar layers placed at distances tnc=1.2, 1.5, and 2nm from the Si/SiO2 interface. The power spectral density of the drain current, Id, fluctuations, SId(f), was measured on the devices with the Si-nc's and without (reference samples). SId(f) measured on

Journal of Applied Physics, 1997

ABSTRACT The effects of electrical stress on static characteristics and power spectral density, S... more ABSTRACT The effects of electrical stress on static characteristics and power spectral density, SIb, of base current, Ib, fluctuations at low frequencies, f<1 kHz, have been studied in quasiself-aligned bipolar n-p-n junction. In as-fabricated devices SIb∝1/AE, where AE is the transistor emitter area, whereas in strongly degraded transistors Sib∝1/PE, where PE is the transistor perimeter. The latter demonstrates directly that hot carrier-induced noise sources are generated at the periphery of the transistors, in agreement with former work on hot electron-induced aging of bipolar junction transistors. © 1997 American Institute of Physics.

Journal of Physics E: Scientific Instruments, 1985

Physical Review, 1968

ABSTRACT Separata de: Physical Review.169, pp. 593-602,1968

Solid State Communications, 1976

Physics Letters A, 1967

ABSTRACT The magnetoresistance varrho/varrhoo of phonon-assisted hop conduction in n-type Ge is f... more ABSTRACT The magnetoresistance varrho/varrhoo of phonon-assisted hop conduction in n-type Ge is found to have an appreciable temperature dependence at high magnetic fields. Reversal of spins of electrons while they make interdonor transitions is shown to be responsible.

Journal of Physics C: Solid State Physics, 1980

Approximate wavefunctions and energies of the ground state of the shallow acceptor in Ge were obt... more Approximate wavefunctions and energies of the ground state of the shallow acceptor in Ge were obtained by solving the effective mass equation possessing terms proportional to the deformation tensor components. The variational approach was used involving trial wavefunctions similar to those of D Schechter, but possessing transformation properties required by the symmetry of the uniaxially deformed crystal. Results were obtained

Journal of Physics C: Solid State Physics, 1983

Surfaces representing the loci of points of which psi *(r) psi (r) = psi *(O) psi (O)exp(-2r/a), ... more Surfaces representing the loci of points of which psi *(r) psi (r) = psi *(O) psi (O)exp(-2r/a), where psi (r) are the wavefunctions of the components of the acceptor ground state in Ge, and a is the average Bohr radius of the acceptor ground state, are presented for several values of the uniaxial stress applied in the (001) orientation. The value of r/a was selected to be equal to 5 and consequently the surfaces give the location in space of points where the tunnelling probability to the point at the origin is equal and sufficiently small to represent the phonon-assisted hopping transitions. The authors demonstrate that the surface of constant tunnelling probability are deformed by the stress in a manner consistent with the assumptions involved in the model of piezoresistance of hopping conduction in p-type germanium formerly proposed by Chroboczek et al. (1981).

Journal of Physics C: Solid State Physics, 1979

ABSTRACT A strong line was observed in the far-infrared absorption spectrum of linearly polarized... more ABSTRACT A strong line was observed in the far-infrared absorption spectrum of linearly polarized light with E perpendicular to B and E//B in n-type HgTe in the Voigt configuration. Since the selection rules exclude plasma-shifted cyclotron resonance absorption for E//B, it is postulated that the transition involves a resonant acceptor state and a Landau level of the continuum.

Philosophical Magazine Letters, 1987

Physical Review Letters, 1991

... 11 FEBRUARY 1991 Magnetic and Magnetotransport Properties of Erbium SilicideEpitaxial Films J... more ... 11 FEBRUARY 1991 Magnetic and Magnetotransport Properties of Erbium SilicideEpitaxial Films J. A. Chroboczek, ' A. Briggs, W. Joss, S. AufI'ret, and J.Pierre " Centre 1Vational d'Etudes des Telecommunications, ... p p to h' for the ma e parameters have b are given in ...

Physica B: Condensed Matter, 1990

Neutron diffraction experiments have been performed on Er3Si5 silicide. The crystallographic stru... more Neutron diffraction experiments have been performed on Er3Si5 silicide. The crystallographic structure of this compound is orthorhombic, the magnetic structure is non-collinear. Magnetic measurements on a single crystal and a thin epitaxial layer give very similar results, in agreement with neutron data.