Jean-Pierre LANDESMAN - Academia.edu (original) (raw)
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Papers by Jean-Pierre LANDESMAN
Materials Science and Engineering: B, 2001
The microphotoluminescence (m-PL) technique is proposed for mapping local stress distribution in ... more The microphotoluminescence (m-PL) technique is proposed for mapping local stress distribution in GaAs/AlGaAs high power laser diode arrays (LDAs). This technique will be used to monitor the stresses that can be induced on the bars during the packaging process. We show herein that also a detailed study of the stress profiles that could exist in the bars before mounting and after aging can be achieved with this technique.
Applied Physics Letters, 1999
ABSTRACT Spatially resolved photoluminescence line scans were performed to determine the local st... more ABSTRACT Spatially resolved photoluminescence line scans were performed to determine the local stresses in AlGaAs laser diodes designed for high-power operation at 808 nm. In this approach, the sign and magnitude of the local stress are deduced from the spectral shift of the peak associated with band-to-band transitions in the n-type GaAs substrate. The sensitivity of the technique (minimal equivalent hydrostatic stress that can be detected) can reach 10 MPa or better. Correlations between solder-induced stress distribution in the devices and estimated lifetimes are demonstrated.
Materials Science and Engineering: B, 2001
The microphotoluminescence (m-PL) technique is proposed for mapping local stress distribution in ... more The microphotoluminescence (m-PL) technique is proposed for mapping local stress distribution in GaAs/AlGaAs high power laser diode arrays (LDAs). This technique will be used to monitor the stresses that can be induced on the bars during the packaging process. We show herein that also a detailed study of the stress profiles that could exist in the bars before mounting and after aging can be achieved with this technique.
Applied Physics Letters, 1999
ABSTRACT Spatially resolved photoluminescence line scans were performed to determine the local st... more ABSTRACT Spatially resolved photoluminescence line scans were performed to determine the local stresses in AlGaAs laser diodes designed for high-power operation at 808 nm. In this approach, the sign and magnitude of the local stress are deduced from the spectral shift of the peak associated with band-to-band transitions in the n-type GaAs substrate. The sensitivity of the technique (minimal equivalent hydrostatic stress that can be detected) can reach 10 MPa or better. Correlations between solder-induced stress distribution in the devices and estimated lifetimes are demonstrated.