Jin Young Jang - Academia.edu (original) (raw)
Papers by Jin Young Jang
Journal of Information Display, 2011
Journal of Information Display Vol. 12, No. 1, March 2011, 4750 ... Highly stable amorphous indi... more Journal of Information Display Vol. 12, No. 1, March 2011, 4750 ... Highly stable amorphous indiumgalliumzinc-oxide thin-film transistor using an etch-stopper and a via-hole structure ... M. Mativenga, JW Choi, JH Hur, HJ Kim and Jin Jang ... Advanced Display Research ...
ECS Transactions
Owing to their unique device structures, amorphous oxide semiconductor (AOS)-based thin-film tran... more Owing to their unique device structures, amorphous oxide semiconductor (AOS)-based thin-film transistors (TFTs) often exhibit non-ideal dependencies on channel width (W) and channel length (L) variations. In particular, two abnormalities are common; 1) the TFT threshold-voltage (V-TH) shifts to the negative gate voltage (V-GS) direction as L decreases for fixed W; and 2) the TFT field-effect mobility (mu(FE)) dramatically increases as W decreases for fixed L. This paper therefore seeks to explain the origin of these non-ideal behaviors and present device topologies that can be utilized to minimize them. The abnormal negative V-TH shift (Delta V-TH) is attributed to unintentional doping of the intrinsic channel region from n(+) doped source/drain regions, whereas the large increase in mu(FE) is due to spreading current, which effectively increases W. It is found that the former can be minimized by reducing the source/drain to active layer contact area, whereas the latter is solved by...
Revue Du Rhumatisme, 1999
In this paper, we suggest an FED packaging technology using the anodic bonding method. Amorphous ... more In this paper, we suggest an FED packaging technology using the anodic bonding method. Amorphous silicon film deposited on glass was contacted with glass substrate followed by bonding. The glass-glass bonding is based on conventional silicon-glass bonding mechanism and was achieved successfully. The FED panel having an opened exhausting hole was formed by the glass frit process and sealed by
We have developed a selective growth technique of carbon nanotubes (CNTs) on stainless steel (SS)... more We have developed a selective growth technique of carbon nanotubes (CNTs) on stainless steel (SS) using a patterned amorphous silicon (a-Si) buffer layer by inductively coupled plasma enhanced chemical vapor deposition (ICP-CVD). The deposition of a 30 nm thick a-Si on SS gives a uniform growth of multi-walled CNTs, aligned vertically to the substrate with an average diameter of 70 ∼ 200 nm and a length of ∼1 μm. The CNTs exhibited a turn-on field of 0.9 V/μm, a current density of 1 mA/cm2 at 3.5 V/μm and uniform electron emission
Journal of gastrointestinal surgery : official journal of the Society for Surgery of the Alimentary Tract, Jan 4, 2015
Current nodal staging system for extrahepatic bile duct (EHBD) cancer is controversial. The numbe... more Current nodal staging system for extrahepatic bile duct (EHBD) cancer is controversial. The number of metastatic lymph nodes (mLN) and lymph node ratio (LNR) has been studied for the assessment of the nodal status in many other gastrointestinal cancers, but there are few studies on assessing the prognostic impact of these parameters in EHBD cancer. We retrospectively reviewed 239 consecutive patients who underwent curative resection followed by adjuvant chemoradiotherapy for adenocarcinoma of EHBD from 1995 to 2009 in our institution. The prognostic value of the number of mLN and LNR was evaluated by adjusting for other known factors. Optimal cutoff points were determined using maximally selected chi-square test. Lymph node metastasis was found in 77 (32 %) patients. Univariate analysis for overall survival (OS) revealed both the number of mLN (0 vs. 1-3 vs. ≥4; p < 0.001) and LNR (<0.2 vs. ≥0.2; p < 0.001) as significant prognosticators. Multivariate analysis demonstrated ...
SID Symposium Digest of Technical Papers, 2003
SID Symposium Digest of Technical Papers, 2004
Springer Proceedings in Physics, 2008
ABSTRACT
SID Symposium Digest of Technical Papers, 2007
We have studied the effect of self-assembled monolayer (SAM) on the performance of printed TFT fo... more We have studied the effect of self-assembled monolayer (SAM) on the performance of printed TFT for a bottom contact, bottom gate TFT. A 6,13-bis(triisopropylsilylethynyl) pentacene (TIPS pentacene) was inkjet printed on the Ag source and drain electrodes. To reduce the energy barrier (1.6 eV) between the pristine Ag and TIPS pentacene, the Ag layer was treated by pentafluorothiophenol. And we controlled the physical interactions at the semiconductor/gate dielectric(photoacryl) interface by inserting a hydrophobic SAM of organoalkyl-Silanes with octyltrichlorosilane or β-phenethyltrichlorosilane. The results show that the TIPS pentacene TFT with PFBT/PTS treatment has field-effect mobility of 0.18 cm2/Vs, subthreshold slope of 0.6 V/decade, and on/off current ratio of 107.
We report the high performance, 6,13-bis(triisopropyl silylethynyl) pentacene (TIPS-pentacene) or... more We report the high performance, 6,13-bis(triisopropyl silylethynyl) pentacene (TIPS-pentacene) organic thin-film transistors (OTFTs) by ink-jet printing on a thin polymer layer. The OTFT with polymer/TIPS-pentacene exhibited the saturation field-effect mobility (μsat) of 1.11 cm2/Vs and threshold voltage (Vth) of −0.41 V. In contrast, the ink-jet printed TIPS-pentacene TFT without PS layer shows the μsat of 0.36 cm2/Vs and Vth of −0.62 V. The improved performance of polymer blended OTFT appears to be due to the improved crystallinity of the polymer blended TIPS-pentacene layer.
Organic Electronics, 2009
AIP Advances, 2015
We investigated the effects of top gate voltage (VTG) and temperature (in the range of 25 to 70 o... more We investigated the effects of top gate voltage (VTG) and temperature (in the range of 25 to 70 oC) on dual-gate (DG) back-channel-etched (BCE) amorphous-indium-gallium-zinc-oxide (a-IGZO) thin film transistors (TFTs) characteristics. The increment of VTG from -20V to +20V, decreases the threshold voltage (VTH) from 19.6V to 3.8V and increases the electron density to 8.8 x 1018cm−3. Temperature dependent field-effect mobility in saturation regime, extracted from bottom gate sweep, show a critical dependency on VTG. At VTG of 20V, the mobility decreases from 19.1to 15.4 cm2/V·s with increasing temperature, showing a metallic conduction. On the other hand, at VTG of - 20V, the mobility increases from 6.4 to 7.5cm2/V·s with increasing temperature. Since the top gate bias controls the position of Fermi level, the temperature dependent mobility shows metallic conduction when the Fermi level is above the conduction band edge, by applying high positive bias to the top gate.
Journal of hepato-biliary-pancreatic sciences, Jan 14, 2015
Little is known about the prognostic significance of serum carbohydrate antigen (CA) 19-9 and car... more Little is known about the prognostic significance of serum carbohydrate antigen (CA) 19-9 and carcinoembryonic antigen (CEA) concentrations for predicting malignancy in patients with intraductal papillary mucinous neoplasm (IPMN) of pancreas. The study cohort consisted of 367 patients with surgical biopsy proven IPMN at Seoul National University Hospital. Preoperative serum tumor markers were evaluated and compared with other clinical variables. Malignant pathology (high grade dysplasia [HGD] and invasive IPMN) was identified in 117 (31.9%) patients. Elevated serum CA19-9 was more frequent in patients with malignant (34.2%, P < 0.001; invasive IPMN vs. HGD 47.9% vs. 11.4%, P < 0.001) and main duct type (40.0%, P = 0.003) IPMN. Multivariate analysis showed main pancreatic duct (MPD) >5 mm…
2005 IEEE LEOS Annual Meeting Conference Proceedings, 2005
ABSTRACT
SID Symposium Digest of Technical Papers, 2011
ABSTRACT
Journal of Materials Chemistry C, 2013
ABSTRACT
SID Symposium Digest of Technical Papers, 2005
We developed an 80 DPI, bottom emission AMOLED (2 inch) on transparent plastic (PES). Hydrogenate... more We developed an 80 DPI, bottom emission AMOLED (2 inch) on transparent plastic (PES). Hydrogenated amorphous silicon (a‐Si: H) on plastic using a PVP (Poly‐4‐vinylphenol) gate insulator was used for switching and driving TFTs. The low temperature process (< 150° C ...
Journal of the Society for Information Display, 2010
ABSTRACT — A low-cost active-matrix backplane using non-laser polycrystalline silicon (poly-Si) h... more ABSTRACT — A low-cost active-matrix backplane using non-laser polycrystalline silicon (poly-Si) having inverse-staggered TFTs with amorphous-silicon (a-Si) n+ contacts has been developed. The thin-film transistors (TFTs) have a center-offset gated structure to reduce the leakage current without scarifying the ON-currents. The leakage current of the center-offset TFTs at Vg = −10 V is two orders of magnitude lower than those of the non-offset TFTs. The center-offset length of the TFTs was 3 μm for both the switching and driving TFTs. A 2.2-in. QQVGA (1 60 × 1 20) active-matrix organic light-emitting-diode (AMOLED) display was demonstrated using conventional 2T + 1C pixel circuits.
Journal of Information Display, 2011
Journal of Information Display Vol. 12, No. 1, March 2011, 4750 ... Highly stable amorphous indi... more Journal of Information Display Vol. 12, No. 1, March 2011, 4750 ... Highly stable amorphous indiumgalliumzinc-oxide thin-film transistor using an etch-stopper and a via-hole structure ... M. Mativenga, JW Choi, JH Hur, HJ Kim and Jin Jang ... Advanced Display Research ...
ECS Transactions
Owing to their unique device structures, amorphous oxide semiconductor (AOS)-based thin-film tran... more Owing to their unique device structures, amorphous oxide semiconductor (AOS)-based thin-film transistors (TFTs) often exhibit non-ideal dependencies on channel width (W) and channel length (L) variations. In particular, two abnormalities are common; 1) the TFT threshold-voltage (V-TH) shifts to the negative gate voltage (V-GS) direction as L decreases for fixed W; and 2) the TFT field-effect mobility (mu(FE)) dramatically increases as W decreases for fixed L. This paper therefore seeks to explain the origin of these non-ideal behaviors and present device topologies that can be utilized to minimize them. The abnormal negative V-TH shift (Delta V-TH) is attributed to unintentional doping of the intrinsic channel region from n(+) doped source/drain regions, whereas the large increase in mu(FE) is due to spreading current, which effectively increases W. It is found that the former can be minimized by reducing the source/drain to active layer contact area, whereas the latter is solved by...
Revue Du Rhumatisme, 1999
In this paper, we suggest an FED packaging technology using the anodic bonding method. Amorphous ... more In this paper, we suggest an FED packaging technology using the anodic bonding method. Amorphous silicon film deposited on glass was contacted with glass substrate followed by bonding. The glass-glass bonding is based on conventional silicon-glass bonding mechanism and was achieved successfully. The FED panel having an opened exhausting hole was formed by the glass frit process and sealed by
We have developed a selective growth technique of carbon nanotubes (CNTs) on stainless steel (SS)... more We have developed a selective growth technique of carbon nanotubes (CNTs) on stainless steel (SS) using a patterned amorphous silicon (a-Si) buffer layer by inductively coupled plasma enhanced chemical vapor deposition (ICP-CVD). The deposition of a 30 nm thick a-Si on SS gives a uniform growth of multi-walled CNTs, aligned vertically to the substrate with an average diameter of 70 ∼ 200 nm and a length of ∼1 μm. The CNTs exhibited a turn-on field of 0.9 V/μm, a current density of 1 mA/cm2 at 3.5 V/μm and uniform electron emission
Journal of gastrointestinal surgery : official journal of the Society for Surgery of the Alimentary Tract, Jan 4, 2015
Current nodal staging system for extrahepatic bile duct (EHBD) cancer is controversial. The numbe... more Current nodal staging system for extrahepatic bile duct (EHBD) cancer is controversial. The number of metastatic lymph nodes (mLN) and lymph node ratio (LNR) has been studied for the assessment of the nodal status in many other gastrointestinal cancers, but there are few studies on assessing the prognostic impact of these parameters in EHBD cancer. We retrospectively reviewed 239 consecutive patients who underwent curative resection followed by adjuvant chemoradiotherapy for adenocarcinoma of EHBD from 1995 to 2009 in our institution. The prognostic value of the number of mLN and LNR was evaluated by adjusting for other known factors. Optimal cutoff points were determined using maximally selected chi-square test. Lymph node metastasis was found in 77 (32 %) patients. Univariate analysis for overall survival (OS) revealed both the number of mLN (0 vs. 1-3 vs. ≥4; p < 0.001) and LNR (<0.2 vs. ≥0.2; p < 0.001) as significant prognosticators. Multivariate analysis demonstrated ...
SID Symposium Digest of Technical Papers, 2003
SID Symposium Digest of Technical Papers, 2004
Springer Proceedings in Physics, 2008
ABSTRACT
SID Symposium Digest of Technical Papers, 2007
We have studied the effect of self-assembled monolayer (SAM) on the performance of printed TFT fo... more We have studied the effect of self-assembled monolayer (SAM) on the performance of printed TFT for a bottom contact, bottom gate TFT. A 6,13-bis(triisopropylsilylethynyl) pentacene (TIPS pentacene) was inkjet printed on the Ag source and drain electrodes. To reduce the energy barrier (1.6 eV) between the pristine Ag and TIPS pentacene, the Ag layer was treated by pentafluorothiophenol. And we controlled the physical interactions at the semiconductor/gate dielectric(photoacryl) interface by inserting a hydrophobic SAM of organoalkyl-Silanes with octyltrichlorosilane or β-phenethyltrichlorosilane. The results show that the TIPS pentacene TFT with PFBT/PTS treatment has field-effect mobility of 0.18 cm2/Vs, subthreshold slope of 0.6 V/decade, and on/off current ratio of 107.
We report the high performance, 6,13-bis(triisopropyl silylethynyl) pentacene (TIPS-pentacene) or... more We report the high performance, 6,13-bis(triisopropyl silylethynyl) pentacene (TIPS-pentacene) organic thin-film transistors (OTFTs) by ink-jet printing on a thin polymer layer. The OTFT with polymer/TIPS-pentacene exhibited the saturation field-effect mobility (μsat) of 1.11 cm2/Vs and threshold voltage (Vth) of −0.41 V. In contrast, the ink-jet printed TIPS-pentacene TFT without PS layer shows the μsat of 0.36 cm2/Vs and Vth of −0.62 V. The improved performance of polymer blended OTFT appears to be due to the improved crystallinity of the polymer blended TIPS-pentacene layer.
Organic Electronics, 2009
AIP Advances, 2015
We investigated the effects of top gate voltage (VTG) and temperature (in the range of 25 to 70 o... more We investigated the effects of top gate voltage (VTG) and temperature (in the range of 25 to 70 oC) on dual-gate (DG) back-channel-etched (BCE) amorphous-indium-gallium-zinc-oxide (a-IGZO) thin film transistors (TFTs) characteristics. The increment of VTG from -20V to +20V, decreases the threshold voltage (VTH) from 19.6V to 3.8V and increases the electron density to 8.8 x 1018cm−3. Temperature dependent field-effect mobility in saturation regime, extracted from bottom gate sweep, show a critical dependency on VTG. At VTG of 20V, the mobility decreases from 19.1to 15.4 cm2/V·s with increasing temperature, showing a metallic conduction. On the other hand, at VTG of - 20V, the mobility increases from 6.4 to 7.5cm2/V·s with increasing temperature. Since the top gate bias controls the position of Fermi level, the temperature dependent mobility shows metallic conduction when the Fermi level is above the conduction band edge, by applying high positive bias to the top gate.
Journal of hepato-biliary-pancreatic sciences, Jan 14, 2015
Little is known about the prognostic significance of serum carbohydrate antigen (CA) 19-9 and car... more Little is known about the prognostic significance of serum carbohydrate antigen (CA) 19-9 and carcinoembryonic antigen (CEA) concentrations for predicting malignancy in patients with intraductal papillary mucinous neoplasm (IPMN) of pancreas. The study cohort consisted of 367 patients with surgical biopsy proven IPMN at Seoul National University Hospital. Preoperative serum tumor markers were evaluated and compared with other clinical variables. Malignant pathology (high grade dysplasia [HGD] and invasive IPMN) was identified in 117 (31.9%) patients. Elevated serum CA19-9 was more frequent in patients with malignant (34.2%, P < 0.001; invasive IPMN vs. HGD 47.9% vs. 11.4%, P < 0.001) and main duct type (40.0%, P = 0.003) IPMN. Multivariate analysis showed main pancreatic duct (MPD) >5 mm…
2005 IEEE LEOS Annual Meeting Conference Proceedings, 2005
ABSTRACT
SID Symposium Digest of Technical Papers, 2011
ABSTRACT
Journal of Materials Chemistry C, 2013
ABSTRACT
SID Symposium Digest of Technical Papers, 2005
We developed an 80 DPI, bottom emission AMOLED (2 inch) on transparent plastic (PES). Hydrogenate... more We developed an 80 DPI, bottom emission AMOLED (2 inch) on transparent plastic (PES). Hydrogenated amorphous silicon (a‐Si: H) on plastic using a PVP (Poly‐4‐vinylphenol) gate insulator was used for switching and driving TFTs. The low temperature process (< 150° C ...
Journal of the Society for Information Display, 2010
ABSTRACT — A low-cost active-matrix backplane using non-laser polycrystalline silicon (poly-Si) h... more ABSTRACT — A low-cost active-matrix backplane using non-laser polycrystalline silicon (poly-Si) having inverse-staggered TFTs with amorphous-silicon (a-Si) n+ contacts has been developed. The thin-film transistors (TFTs) have a center-offset gated structure to reduce the leakage current without scarifying the ON-currents. The leakage current of the center-offset TFTs at Vg = −10 V is two orders of magnitude lower than those of the non-offset TFTs. The center-offset length of the TFTs was 3 μm for both the switching and driving TFTs. A 2.2-in. QQVGA (1 60 × 1 20) active-matrix organic light-emitting-diode (AMOLED) display was demonstrated using conventional 2T + 1C pixel circuits.