Jin-seong Park - Academia.edu (original) (raw)
Papers by Jin-seong Park
Microelectronic Engineering, 2006
... CMP processing time was 30 s. The conditioning pressure was fixed by 2 kg/cm 2 for 60 s. Rode... more ... CMP processing time was 30 s. The conditioning pressure was fixed by 2 kg/cm 2 for 60 s. Rodel IC-1300 and Suba-IV were adhered by a bonding agent of PSA-II to make a double pad, which was used as a polishing pad. ...
Materials Research Bulletin, 2012
Solid State Phenomena, 2007
Ceramics International, 2015
Journal of the Society for Information Display, 2009
A full-color 12.1-in. WXGA active-matrix organic-light-emitting-diode (AMOLED) display was, for t... more A full-color 12.1-in. WXGA active-matrix organic-light-emitting-diode (AMOLED) display was, for the first time, demonstrated using indium-gallium-zinc oxide (IGZO) thin-film transistors (TFTs) as an active-matrix backplane. It was found that the fabricated AMOLED display did not suffer from the well-known pixel non-uniformity in luminance, even though the simple structure consisting of two transistors and one capacitor was adopted as the unit pixel circuit, which was attributed to the amorphous nature of IGZO semiconductors. The n-channel a-IGZO TFTs exhibited a field-effect mobility of 17 cm 2 /V-sec, threshold voltage of 1.1 V, on/off ratio >10 9 , and subthreshold gate swing of 0.28 V/dec. The AMOLED display with a-IGZO TFT array is promising for large-sized applications such as notebook PCs and HDTVs because the a-IGZO semiconductor can be deposited on large glass substrates (larger than Gen 7) using the conventional sputtering system.
SID Symposium Digest of Technical Papers, 2006
SID Symposium Digest of Technical Papers, 2008
The full color 12.1‐inch WXGA active‐matrix organic light emitting diode (AMOLED) display was, fo... more The full color 12.1‐inch WXGA active‐matrix organic light emitting diode (AMOLED) display was, for the first time, demonstrated using indium‐gallium‐zinc oxide (IGZO) thin‐film transistors (TFTs) as an active‐matrix back plane. It was found that the fabricated AMOLED display ...
Thin Solid Films, 2011
The strong correlation between the microstructural characteristics of ZnO channel layers grown at... more The strong correlation between the microstructural characteristics of ZnO channel layers grown at various temperatures by radio-frequency magnetron sputtering and the electrical performances of resulting bottom-gate thin film transistors (TFTs) was reported. Transmission electron microscopy revealed that increasing growth temperature enhanced degree of c-axis preferred orientation and enlarged width of columns in the ZnO films. The ZnO channel layers grown at 250 and 350°C exhibited TFT saturation behavior. However, growing them at ≥350°C produced small grains in the junctions of ZnO/SiO 2 interface and grain boundaries, which led to hump behavior in TFT transfer curve caused by formation of additional boundaries.
Sensors and Actuators B: Chemical, 2003
Fine powder of ZnO was synthesized by the sol-gel method, which was then calcined followed by spi... more Fine powder of ZnO was synthesized by the sol-gel method, which was then calcined followed by spin coating on an alumina substrate and tested for CO gas sensing. With variation in the calcination temperature, the shape of gel powder changed into various morphologies: sheet, needle, and sphere. The grain growth rate increased above 700 • C and the larger grains showed higher degree of crystallization. The organic element in gel powders evaporated below 300 • C. The temperature dependence of the electrical conductance showed the sigmoidal shape, but the temperature range of the constant conductance narrowed with the decrease in the calcination temperature. The optimum sensing properties were observed for the specimen calcined at 500 • C, and it degraded with the increase in calcination temperature because of the larger grain size that limits the surface area for gas-solid reaction.
Protein & Peptide Letters, 2008
An efficient asymmetric synthesis of 6-aminobicyclo[2.2.1]heptane-2-carboxylic acid as a novel ga... more An efficient asymmetric synthesis of 6-aminobicyclo[2.2.1]heptane-2-carboxylic acid as a novel gamma-turn mimic has been achieved. Structural analysis of the gamma-amino acid derivative was carried out using (1)H NMR spectroscopy and intramolecular hydrogen bonding between side chain amides confirmed the turn structure, which had been predicted by Ab initio computational study.
Microelectronic Engineering, 2005
Polishing pad plays a key role in chemical mechanical polishing (CMP), which has been recognized ... more Polishing pad plays a key role in chemical mechanical polishing (CMP), which has been recognized as a critical step to improve the morphology of wafers for semiconductor chip fabrication. The performance of oxide CMP process is investigated using commercial silica slurry as the temperature of pad conditioning is increased. This study also shows the change of the pore and groove geometries on the polishing pad with the different temperatures in pad conditioning. The pad conditioning with the high temperature achieved the improved removal rate of oxide film by the reason of larger transport of slurry and the better surface morphology without defect by somewhat softer characteristic of polishing pad.
Microelectronic Engineering, 2006
Surface roughness by peaks, bumps, large particles, and pin-holes on the surface of indium tin ox... more Surface roughness by peaks, bumps, large particles, and pin-holes on the surface of indium tin oxide (ITO) thin film, which is widely used for a transparent electrode of optoelectronic devices, caused the destruction of color quality and the reduction of device life time. Chemical mechanical polishing (CMP) process was selected to smooth the surface roughness in this study. Some process parameters including polishing time, slurry flow rate, table speed, and slurry temperature were varied to optimize the ITO-CMP process. The removal rate and the non-uniformity were 60.45 nm/min and 5.17% at the condition of appropriate process parameters as follows: head speed, slurry temperature, down force, slurry flow rate, polishing time, and table speed were 60 rpm, 30°C, 300 gf/cm 2 , 40 ml/min, 60 s, and 60 rpm, respectively. However, the sufficient non-uniformity below 5.0% was not obtained in all process parameter conditions due to the unequal polishing by the silica slurry. Optical transmittance of ITO thin film was improved from 83.3% to 85.0% after CMP process.
Journal of the Korean Physical Society, 2007
Journal of the American Chemical Society, 2003
Amino acid oligomers composed exclusively of homochiral trans-2-aminocyclopentanecarboxylic acid ... more Amino acid oligomers composed exclusively of homochiral trans-2-aminocyclopentanecarboxylic acid (ACPC) residues and/or related pyrrolidine-based residues are known to favor a specific helical secondary structure that is defined by 12-membered ring CdO(i)--H-N(i+3) hydrogen bonds ("12-helix"). The 12-helix is structurally similar to the familiar R-helix and therefore represents a source of potential R-helix-mimics. The 12-helix will be most useful in this regard if this conformational scaffold can be employed to arrange specific sets of protein-like side chains in space. Here we examine whether the 12-helix tolerates insertion of acyclic -amino acid residues bearing a substituent in the R-position (" 2 -residues"). Seventeen homologous -peptide heptamers have been prepared in which one to four 2 -residues reside among ACPC and/or pyrrolidine residues. Circular dichroism comparisons suggest that 2 -residues have a lower 12helical propensity than do residues preorganized by a five-membered ring, as expected, but that -peptides containing 2 -residues at one or two of the seven positions retain a significant preference for 12-helix formation. These results indicate that a limited number of 2 -residues can be used to introduce side chains at specific positions along the surface of a 12-helix.
Journal of Physics D: Applied Physics, 2014
ABSTRACT We report a novel GeInSnOx (GeITO) thin-film transistor (TFT) synthesized by a solution ... more ABSTRACT We report a novel GeInSnOx (GeITO) thin-film transistor (TFT) synthesized by a solution process, utilizing Ge as a charge carrier suppressor and amorphization-promoter, and the dependence of its microstructure, electronic structure and electrical properties on sintering temperature. The amorphous structure was maintained regardless of the sintering temperature. As the sintering temperature increased, the amount of oxygen vacancies increased and GeO2 bonds transformed into GeO bonds near the film surface above 400 °C. In addition, the In 5sp/Sn 5sp states appeared to act as the dominant electron source in the GeITO channel layers with increasing sintering temperature. These behaviours influenced TFT performances: the saturation mobility was increased from 0.004 to 6.4 cm2 V-1 s-1, while the threshold voltage was shifted in the negative direction by increasing the sintering temperature, which demonstrates the high sensitivity of the solution-deposited GeITO to the processing temperature.
Journal of The Electrochemical Society, 2011
ABSTRACT
Journal of The Electrochemical Society, 2010
The electrical properties of atomic layer deposition (ALD) nitrogen-doped ZnO (ZnO: N) thin films... more The electrical properties of atomic layer deposition (ALD) nitrogen-doped ZnO (ZnO: N) thin films were investigated as a function of incorporated nitrogen concentration. The nitrogen concentrations in the films were controlled by using different concentrations of solution, ...
Journal of Electroceramics, 2013
Ru-AlN thin films were suggested as a novel multifunctional heating resistor film for non-passiva... more Ru-AlN thin films were suggested as a novel multifunctional heating resistor film for non-passivated type thermal inkjet printer devices. Ru-AlN thin films were prepared by plasma-enhanced atomic layer deposition in order to intermix Ru and AlN precisely. When the Ru intermixing ratios were optimized, Ru-AlN films showed a favorable electrical resistivity (from 490.9 to 75.3 μΩcm) and minimized temperature coefficient of resistance (TCR) values (from 335 to 360 ppm/K). Moreover, the Ru-AlN films showed a strong oxidation resistant as compared with commercially used TaN 0.8 films because the prepared Ru-AlN thin films had a typical nanocomposite structure. By applying electrical pulses to the heater device using Ru-AlN thin films for a Joule heating, a reliable operation was also proven. Keywords Thermal inkjet printer . Platinum group metals . Plasma-enhanced atomic layer deposition . Multifunctional thin films PACS 65.80.-g . 73.61.-r . 72.80.Ng Abbreviations TCR Temperature coefficient of resistance TIJ Thermal inkjet PGM Platinum group metal PEALD Plasma-enhanced atomic layer deposition TMA Trimethylaluminum Ru(EtCp) 2 Bis(ethylcyclopentadienyl)ruthenium Woo-Chang Choi and Zhixin Wan contributed equally to this work.
Journal of Electroceramics, 2013
Microelectronic Engineering, 2006
... CMP processing time was 30 s. The conditioning pressure was fixed by 2 kg/cm 2 for 60 s. Rode... more ... CMP processing time was 30 s. The conditioning pressure was fixed by 2 kg/cm 2 for 60 s. Rodel IC-1300 and Suba-IV were adhered by a bonding agent of PSA-II to make a double pad, which was used as a polishing pad. ...
Materials Research Bulletin, 2012
Solid State Phenomena, 2007
Ceramics International, 2015
Journal of the Society for Information Display, 2009
A full-color 12.1-in. WXGA active-matrix organic-light-emitting-diode (AMOLED) display was, for t... more A full-color 12.1-in. WXGA active-matrix organic-light-emitting-diode (AMOLED) display was, for the first time, demonstrated using indium-gallium-zinc oxide (IGZO) thin-film transistors (TFTs) as an active-matrix backplane. It was found that the fabricated AMOLED display did not suffer from the well-known pixel non-uniformity in luminance, even though the simple structure consisting of two transistors and one capacitor was adopted as the unit pixel circuit, which was attributed to the amorphous nature of IGZO semiconductors. The n-channel a-IGZO TFTs exhibited a field-effect mobility of 17 cm 2 /V-sec, threshold voltage of 1.1 V, on/off ratio >10 9 , and subthreshold gate swing of 0.28 V/dec. The AMOLED display with a-IGZO TFT array is promising for large-sized applications such as notebook PCs and HDTVs because the a-IGZO semiconductor can be deposited on large glass substrates (larger than Gen 7) using the conventional sputtering system.
SID Symposium Digest of Technical Papers, 2006
SID Symposium Digest of Technical Papers, 2008
The full color 12.1‐inch WXGA active‐matrix organic light emitting diode (AMOLED) display was, fo... more The full color 12.1‐inch WXGA active‐matrix organic light emitting diode (AMOLED) display was, for the first time, demonstrated using indium‐gallium‐zinc oxide (IGZO) thin‐film transistors (TFTs) as an active‐matrix back plane. It was found that the fabricated AMOLED display ...
Thin Solid Films, 2011
The strong correlation between the microstructural characteristics of ZnO channel layers grown at... more The strong correlation between the microstructural characteristics of ZnO channel layers grown at various temperatures by radio-frequency magnetron sputtering and the electrical performances of resulting bottom-gate thin film transistors (TFTs) was reported. Transmission electron microscopy revealed that increasing growth temperature enhanced degree of c-axis preferred orientation and enlarged width of columns in the ZnO films. The ZnO channel layers grown at 250 and 350°C exhibited TFT saturation behavior. However, growing them at ≥350°C produced small grains in the junctions of ZnO/SiO 2 interface and grain boundaries, which led to hump behavior in TFT transfer curve caused by formation of additional boundaries.
Sensors and Actuators B: Chemical, 2003
Fine powder of ZnO was synthesized by the sol-gel method, which was then calcined followed by spi... more Fine powder of ZnO was synthesized by the sol-gel method, which was then calcined followed by spin coating on an alumina substrate and tested for CO gas sensing. With variation in the calcination temperature, the shape of gel powder changed into various morphologies: sheet, needle, and sphere. The grain growth rate increased above 700 • C and the larger grains showed higher degree of crystallization. The organic element in gel powders evaporated below 300 • C. The temperature dependence of the electrical conductance showed the sigmoidal shape, but the temperature range of the constant conductance narrowed with the decrease in the calcination temperature. The optimum sensing properties were observed for the specimen calcined at 500 • C, and it degraded with the increase in calcination temperature because of the larger grain size that limits the surface area for gas-solid reaction.
Protein & Peptide Letters, 2008
An efficient asymmetric synthesis of 6-aminobicyclo[2.2.1]heptane-2-carboxylic acid as a novel ga... more An efficient asymmetric synthesis of 6-aminobicyclo[2.2.1]heptane-2-carboxylic acid as a novel gamma-turn mimic has been achieved. Structural analysis of the gamma-amino acid derivative was carried out using (1)H NMR spectroscopy and intramolecular hydrogen bonding between side chain amides confirmed the turn structure, which had been predicted by Ab initio computational study.
Microelectronic Engineering, 2005
Polishing pad plays a key role in chemical mechanical polishing (CMP), which has been recognized ... more Polishing pad plays a key role in chemical mechanical polishing (CMP), which has been recognized as a critical step to improve the morphology of wafers for semiconductor chip fabrication. The performance of oxide CMP process is investigated using commercial silica slurry as the temperature of pad conditioning is increased. This study also shows the change of the pore and groove geometries on the polishing pad with the different temperatures in pad conditioning. The pad conditioning with the high temperature achieved the improved removal rate of oxide film by the reason of larger transport of slurry and the better surface morphology without defect by somewhat softer characteristic of polishing pad.
Microelectronic Engineering, 2006
Surface roughness by peaks, bumps, large particles, and pin-holes on the surface of indium tin ox... more Surface roughness by peaks, bumps, large particles, and pin-holes on the surface of indium tin oxide (ITO) thin film, which is widely used for a transparent electrode of optoelectronic devices, caused the destruction of color quality and the reduction of device life time. Chemical mechanical polishing (CMP) process was selected to smooth the surface roughness in this study. Some process parameters including polishing time, slurry flow rate, table speed, and slurry temperature were varied to optimize the ITO-CMP process. The removal rate and the non-uniformity were 60.45 nm/min and 5.17% at the condition of appropriate process parameters as follows: head speed, slurry temperature, down force, slurry flow rate, polishing time, and table speed were 60 rpm, 30°C, 300 gf/cm 2 , 40 ml/min, 60 s, and 60 rpm, respectively. However, the sufficient non-uniformity below 5.0% was not obtained in all process parameter conditions due to the unequal polishing by the silica slurry. Optical transmittance of ITO thin film was improved from 83.3% to 85.0% after CMP process.
Journal of the Korean Physical Society, 2007
Journal of the American Chemical Society, 2003
Amino acid oligomers composed exclusively of homochiral trans-2-aminocyclopentanecarboxylic acid ... more Amino acid oligomers composed exclusively of homochiral trans-2-aminocyclopentanecarboxylic acid (ACPC) residues and/or related pyrrolidine-based residues are known to favor a specific helical secondary structure that is defined by 12-membered ring CdO(i)--H-N(i+3) hydrogen bonds ("12-helix"). The 12-helix is structurally similar to the familiar R-helix and therefore represents a source of potential R-helix-mimics. The 12-helix will be most useful in this regard if this conformational scaffold can be employed to arrange specific sets of protein-like side chains in space. Here we examine whether the 12-helix tolerates insertion of acyclic -amino acid residues bearing a substituent in the R-position (" 2 -residues"). Seventeen homologous -peptide heptamers have been prepared in which one to four 2 -residues reside among ACPC and/or pyrrolidine residues. Circular dichroism comparisons suggest that 2 -residues have a lower 12helical propensity than do residues preorganized by a five-membered ring, as expected, but that -peptides containing 2 -residues at one or two of the seven positions retain a significant preference for 12-helix formation. These results indicate that a limited number of 2 -residues can be used to introduce side chains at specific positions along the surface of a 12-helix.
Journal of Physics D: Applied Physics, 2014
ABSTRACT We report a novel GeInSnOx (GeITO) thin-film transistor (TFT) synthesized by a solution ... more ABSTRACT We report a novel GeInSnOx (GeITO) thin-film transistor (TFT) synthesized by a solution process, utilizing Ge as a charge carrier suppressor and amorphization-promoter, and the dependence of its microstructure, electronic structure and electrical properties on sintering temperature. The amorphous structure was maintained regardless of the sintering temperature. As the sintering temperature increased, the amount of oxygen vacancies increased and GeO2 bonds transformed into GeO bonds near the film surface above 400 °C. In addition, the In 5sp/Sn 5sp states appeared to act as the dominant electron source in the GeITO channel layers with increasing sintering temperature. These behaviours influenced TFT performances: the saturation mobility was increased from 0.004 to 6.4 cm2 V-1 s-1, while the threshold voltage was shifted in the negative direction by increasing the sintering temperature, which demonstrates the high sensitivity of the solution-deposited GeITO to the processing temperature.
Journal of The Electrochemical Society, 2011
ABSTRACT
Journal of The Electrochemical Society, 2010
The electrical properties of atomic layer deposition (ALD) nitrogen-doped ZnO (ZnO: N) thin films... more The electrical properties of atomic layer deposition (ALD) nitrogen-doped ZnO (ZnO: N) thin films were investigated as a function of incorporated nitrogen concentration. The nitrogen concentrations in the films were controlled by using different concentrations of solution, ...
Journal of Electroceramics, 2013
Ru-AlN thin films were suggested as a novel multifunctional heating resistor film for non-passiva... more Ru-AlN thin films were suggested as a novel multifunctional heating resistor film for non-passivated type thermal inkjet printer devices. Ru-AlN thin films were prepared by plasma-enhanced atomic layer deposition in order to intermix Ru and AlN precisely. When the Ru intermixing ratios were optimized, Ru-AlN films showed a favorable electrical resistivity (from 490.9 to 75.3 μΩcm) and minimized temperature coefficient of resistance (TCR) values (from 335 to 360 ppm/K). Moreover, the Ru-AlN films showed a strong oxidation resistant as compared with commercially used TaN 0.8 films because the prepared Ru-AlN thin films had a typical nanocomposite structure. By applying electrical pulses to the heater device using Ru-AlN thin films for a Joule heating, a reliable operation was also proven. Keywords Thermal inkjet printer . Platinum group metals . Plasma-enhanced atomic layer deposition . Multifunctional thin films PACS 65.80.-g . 73.61.-r . 72.80.Ng Abbreviations TCR Temperature coefficient of resistance TIJ Thermal inkjet PGM Platinum group metal PEALD Plasma-enhanced atomic layer deposition TMA Trimethylaluminum Ru(EtCp) 2 Bis(ethylcyclopentadienyl)ruthenium Woo-Chang Choi and Zhixin Wan contributed equally to this work.
Journal of Electroceramics, 2013