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Papers by Johannes Poetschke

Research paper thumbnail of Influence and effectivity of VC and Cr3C2 grain growth inhibitors on sintering of binderless tungsten carbide

International Journal of Refractory Metals and Hard Materials, 2012

ABSTRACT

Research paper thumbnail of Low-Temperature Spark Plasma Sintering of Pure Nano WC Powder

Journal of the American Ceramic Society, 2013

For the first time we have demonstrated the densification of high-purity nanostructured (d avg % ... more For the first time we have demonstrated the densification of high-purity nanostructured (d avg % 60 nm) tungsten carbide by High Pressure Spark Plasma Sintering (HPSPS) in the unusually low temperature range of 1200°C-1400°C. The high-pressure sintering (i.e., 300 MPa) produced dense material at a temperature as low as 1400°C. In comparison with more conventional sintering techniques, such as SPS (80 MPa) or hot isostatic pressing, HPSPS lowered the temperature required for full densification by 400°C-500°C. High Pressure Spark Plasma Sintering, even in absence of any sintering aid or grain growth inhibitor, retained a very fine microstructure resulting in a significant improvement in both hardness (2721 HV 10 ) and fracture toughness (7.2 MPa m 1/2 ). †

Research paper thumbnail of Influence and effectivity of VC and Cr3C2 grain growth inhibitors on sintering of binderless tungsten carbide

International Journal of Refractory Metals and Hard Materials, 2012

ABSTRACT

Research paper thumbnail of Low-Temperature Spark Plasma Sintering of Pure Nano WC Powder

Journal of the American Ceramic Society, 2013

For the first time we have demonstrated the densification of high-purity nanostructured (d avg % ... more For the first time we have demonstrated the densification of high-purity nanostructured (d avg % 60 nm) tungsten carbide by High Pressure Spark Plasma Sintering (HPSPS) in the unusually low temperature range of 1200°C-1400°C. The high-pressure sintering (i.e., 300 MPa) produced dense material at a temperature as low as 1400°C. In comparison with more conventional sintering techniques, such as SPS (80 MPa) or hot isostatic pressing, HPSPS lowered the temperature required for full densification by 400°C-500°C. High Pressure Spark Plasma Sintering, even in absence of any sintering aid or grain growth inhibitor, retained a very fine microstructure resulting in a significant improvement in both hardness (2721 HV 10 ) and fracture toughness (7.2 MPa m 1/2 ). †

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