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Papers by Karl-Heinz Heinig
MRS Proceedings, 1993
ABSTRACTSingle crystal (100) silicon substrates were implanted at 300 keV with substoichiometric ... more ABSTRACTSingle crystal (100) silicon substrates were implanted at 300 keV with substoichiometric oxygen doses ranging from 1 × 1016 to 1 × 1017 cm-2. Samples were annealed for 2 hours over the temperature range from 1100°C to 1250°C and were subsequently analysed by both cross sectional transmission electron microscopy (XTEM) and scanning electron microscopy (SEM). The nucleation and growth of oxide precipitates within the implanted layer was followed during annealing. The emphasis was placed upon studying the process of Ostwald ripening which is known to play an important role in the formation of the incipient buried layer. Besides, a clear trend of the SiO2 precipitates to arrange in well defined regions was revealed and this was attributed, as distinct from the earlier claims, to an inherent process of self organisation.
Microelectronic Engineering, 2020
This is a PDF file of an article that has undergone enhancements after acceptance, such as the ad... more This is a PDF file of an article that has undergone enhancements after acceptance, such as the addition of a cover page and metadata, and formatting for readability, but it is not yet the definitive version of record. This version will undergo additional copyediting, typesetting and review before it is published in its final form, but we are providing this version to give early visibility of the article. Please note that, during the production process, errors may be discovered which could affect the content, and all legal disclaimers that apply to the journal pertain.
Applied Surface Science, 1989
Applied Surface Science, 1989
Amorphous silicon layers deposited by chemical vapour deposition on monocrystalline silicon subst... more Amorphous silicon layers deposited by chemical vapour deposition on monocrystalline silicon substrates partly covered with silicon dioxide to produce SOl structures were epitaxially recrystallised by ion beam induced epitaxial crystallisation at 400 o C after preamorphisation of the transition region layer/substrate. The implantation with a dose of 5 × 1017 cm : into the wafers with SOl structure resulted in a 1.5 p.m wide overgrown crystalline layer.
Applied Surface Science, 2012
Applied Physics Letters, 1997
Applied Physics Letters, 2007
Applied Physics Letters, 2013
Applied Physics Letters, 2013
Applied Physics Letters, 2009
Light emitting field effect transistors based on narrow layers of silicon nanocrystals ͑NCs͒ in t... more Light emitting field effect transistors based on narrow layers of silicon nanocrystals ͑NCs͒ in the gate oxide were fabricated. Direct quantum mechanical electron and hole tunneling into NCs was achieved by self-alignment of NCs-interface-distances to ϳ2 nm. The direct tunneling reduces oxide degradation, prolongs device lifetime and increases operation speed. Self-alignment occurs during thermal treatment of ion irradiated stacks of 50 nm polycrystalline silicon/15 nm SiO 2 / ͑001͒Si substrate. An alternating voltage ͑ac͒ was applied to the gate to inject charges into the NCs. Due to injection by direct tunneling, electroluminescence extends to higher ac frequencies than reported so far.
Applied Physics Letters, 2004
Applied Physics Letters, 2013
ABSTRACT Sponge-like Si nanostructures embedded in SiO2 were fabricated by spinodal decomposition... more ABSTRACT Sponge-like Si nanostructures embedded in SiO2 were fabricated by spinodal decomposition of sputter-deposited silicon-rich oxide with a stoichiometry close to that of silicon monoxide. After thermal treatment a mean feature size of about 3 nm was found in the phase-separated structure. The structure of the Si-SiO2 nanocomposite was investigated by energy-filtered transmission electron microscopy (EFTEM), EFTEM tomography, and atom probe tomography, which revealed a percolated Si morphology. It was shown that the percolation of the Si network in 3D can also be proven on the basis of 2D EFTEM images by comparison with 3D kinetic Monte Carlo simulations.
Applied Physics Letters, 2013
Applied Physics A: Materials Science & Processing, 2003
We have investigated the synthesis of nanostructures, as well as the control of their size and lo... more We have investigated the synthesis of nanostructures, as well as the control of their size and location by means of ion beams. The phase separation and interface kinetics under ion irradiation give new possibilities for controlling the growth of nanostructures. Additionally, the chemical decomposition of the host matrix by collisional mixing can contribute to the selforganization of nanostructures, especially at interfaces. It is shown how collisional mixing during ion implantation affects nanocrystal (NC) synthesis and how ion irradiation through NCs modifies their size and size distribution. An analytical expression for solute concentration around an ion-irradiated NC was found, which may be written like the well-known Gibbs-Thomson relation. However, parameters have modified meanings, which has a significant impact on the evolution of NC ensembles. "Inverse Ostwald ripening" of NCs, resulting in an unimodal NC size distribution, is predicted, which has been confirmed experimentally for Au NCs in SiO 2 and by kinetic lattice Monte Carlo simulations. At interfaces, the same ionirradiation-induced mechanism may result in self-organization of NCs into a thin δ-layer. Collisional decomposition of SiO 2 may enhance the NC δ-layer formation in SiO 2 at the Si/SiO 2 interface. The distance of the self-organized NC δ-layer from the SiO 2 /Si interface renders the structure interesting for nonvolatile memory applications.
MRS Proceedings, 1993
ABSTRACTSingle crystal (100) silicon substrates were implanted at 300 keV with substoichiometric ... more ABSTRACTSingle crystal (100) silicon substrates were implanted at 300 keV with substoichiometric oxygen doses ranging from 1 × 1016 to 1 × 1017 cm-2. Samples were annealed for 2 hours over the temperature range from 1100°C to 1250°C and were subsequently analysed by both cross sectional transmission electron microscopy (XTEM) and scanning electron microscopy (SEM). The nucleation and growth of oxide precipitates within the implanted layer was followed during annealing. The emphasis was placed upon studying the process of Ostwald ripening which is known to play an important role in the formation of the incipient buried layer. Besides, a clear trend of the SiO2 precipitates to arrange in well defined regions was revealed and this was attributed, as distinct from the earlier claims, to an inherent process of self organisation.
Microelectronic Engineering, 2020
This is a PDF file of an article that has undergone enhancements after acceptance, such as the ad... more This is a PDF file of an article that has undergone enhancements after acceptance, such as the addition of a cover page and metadata, and formatting for readability, but it is not yet the definitive version of record. This version will undergo additional copyediting, typesetting and review before it is published in its final form, but we are providing this version to give early visibility of the article. Please note that, during the production process, errors may be discovered which could affect the content, and all legal disclaimers that apply to the journal pertain.
Applied Surface Science, 1989
Applied Surface Science, 1989
Amorphous silicon layers deposited by chemical vapour deposition on monocrystalline silicon subst... more Amorphous silicon layers deposited by chemical vapour deposition on monocrystalline silicon substrates partly covered with silicon dioxide to produce SOl structures were epitaxially recrystallised by ion beam induced epitaxial crystallisation at 400 o C after preamorphisation of the transition region layer/substrate. The implantation with a dose of 5 × 1017 cm : into the wafers with SOl structure resulted in a 1.5 p.m wide overgrown crystalline layer.
Applied Surface Science, 2012
Applied Physics Letters, 1997
Applied Physics Letters, 2007
Applied Physics Letters, 2013
Applied Physics Letters, 2013
Applied Physics Letters, 2009
Light emitting field effect transistors based on narrow layers of silicon nanocrystals ͑NCs͒ in t... more Light emitting field effect transistors based on narrow layers of silicon nanocrystals ͑NCs͒ in the gate oxide were fabricated. Direct quantum mechanical electron and hole tunneling into NCs was achieved by self-alignment of NCs-interface-distances to ϳ2 nm. The direct tunneling reduces oxide degradation, prolongs device lifetime and increases operation speed. Self-alignment occurs during thermal treatment of ion irradiated stacks of 50 nm polycrystalline silicon/15 nm SiO 2 / ͑001͒Si substrate. An alternating voltage ͑ac͒ was applied to the gate to inject charges into the NCs. Due to injection by direct tunneling, electroluminescence extends to higher ac frequencies than reported so far.
Applied Physics Letters, 2004
Applied Physics Letters, 2013
ABSTRACT Sponge-like Si nanostructures embedded in SiO2 were fabricated by spinodal decomposition... more ABSTRACT Sponge-like Si nanostructures embedded in SiO2 were fabricated by spinodal decomposition of sputter-deposited silicon-rich oxide with a stoichiometry close to that of silicon monoxide. After thermal treatment a mean feature size of about 3 nm was found in the phase-separated structure. The structure of the Si-SiO2 nanocomposite was investigated by energy-filtered transmission electron microscopy (EFTEM), EFTEM tomography, and atom probe tomography, which revealed a percolated Si morphology. It was shown that the percolation of the Si network in 3D can also be proven on the basis of 2D EFTEM images by comparison with 3D kinetic Monte Carlo simulations.
Applied Physics Letters, 2013
Applied Physics A: Materials Science & Processing, 2003
We have investigated the synthesis of nanostructures, as well as the control of their size and lo... more We have investigated the synthesis of nanostructures, as well as the control of their size and location by means of ion beams. The phase separation and interface kinetics under ion irradiation give new possibilities for controlling the growth of nanostructures. Additionally, the chemical decomposition of the host matrix by collisional mixing can contribute to the selforganization of nanostructures, especially at interfaces. It is shown how collisional mixing during ion implantation affects nanocrystal (NC) synthesis and how ion irradiation through NCs modifies their size and size distribution. An analytical expression for solute concentration around an ion-irradiated NC was found, which may be written like the well-known Gibbs-Thomson relation. However, parameters have modified meanings, which has a significant impact on the evolution of NC ensembles. "Inverse Ostwald ripening" of NCs, resulting in an unimodal NC size distribution, is predicted, which has been confirmed experimentally for Au NCs in SiO 2 and by kinetic lattice Monte Carlo simulations. At interfaces, the same ionirradiation-induced mechanism may result in self-organization of NCs into a thin δ-layer. Collisional decomposition of SiO 2 may enhance the NC δ-layer formation in SiO 2 at the Si/SiO 2 interface. The distance of the self-organized NC δ-layer from the SiO 2 /Si interface renders the structure interesting for nonvolatile memory applications.