Kenneth Dung - Academia.edu (original) (raw)

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Papers by Kenneth Dung

Research paper thumbnail of COM2 SiGe modular BiCMOS technology for digital, mixed-signal, and RF applications

Research paper thumbnail of Very low cost graded SiGe base bipolar transistors for a high performance modular BiCMOS process

We report a new super self-aligned graded SiGe base transistor that uses high energy implantation... more We report a new super self-aligned graded SiGe base transistor that uses high energy implantation, rather than epitaxial growth, to form the sub-collector region. This new inexpensive process yields a device with f/sub T/ of 52 GHz and f/sub max/ of 70 GHz with the addition of only 4 lithography levels over our 0.25 /spl mu/m CMOS technology without any changes to the existing process steps. Also, we demonstrate 4:1 multiplexer and 1:4 demultiplexer circuits using this technology that show excellent performance at 10 Gbit/s.

Research paper thumbnail of COM2 SiGe modular BiCMOS technology for digital, mixed-signal, and RF applications

Research paper thumbnail of Very low cost graded SiGe base bipolar transistors for a high performance modular BiCMOS process

We report a new super self-aligned graded SiGe base transistor that uses high energy implantation... more We report a new super self-aligned graded SiGe base transistor that uses high energy implantation, rather than epitaxial growth, to form the sub-collector region. This new inexpensive process yields a device with f/sub T/ of 52 GHz and f/sub max/ of 70 GHz with the addition of only 4 lithography levels over our 0.25 /spl mu/m CMOS technology without any changes to the existing process steps. Also, we demonstrate 4:1 multiplexer and 1:4 demultiplexer circuits using this technology that show excellent performance at 10 Gbit/s.

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