Kevin Motto - Academia.edu (original) (raw)
Papers by Kevin Motto
APEC 2000. Fifteenth Annual IEEE Applied Power Electronics Conference and Exposition (Cat. No.00CH37058), 2000
Page 1. Comparison of the State-of-the-art High Power IGBTs, GCTs and ETOs Kevin Motto, Yuxin Li,... more Page 1. Comparison of the State-of-the-art High Power IGBTs, GCTs and ETOs Kevin Motto, Yuxin Li, and Alex Q. Huang Center for Power Electronics Systems The Bradley Department of Electrical and Computer Engineering ...
APEC 2001. Sixteenth Annual IEEE Applied Power Electronics Conference and Exposition (Cat. No.01CH37181), 2001
Page 1. High Frequency Operation of a Megawatt Voltage Source Inverter Equipped with ETOs Kevin M... more Page 1. High Frequency Operation of a Megawatt Voltage Source Inverter Equipped with ETOs Kevin Motto #1 , Yuxin Li #2 , Zhenxue Xu, Bin Zhang and Alex Q. Huang Center for Power Electronics System The Bradley Department ...
International Journal of Mass Spectrometry, 2001
This paper characterizes the integrated gate commutated thyristor (IGCT) device under the zero-cu... more This paper characterizes the integrated gate commutated thyristor (IGCT) device under the zero-current-transition (ZCT) soft switching condition for the first time. The test results show that ZCT soft switching can dramatically reduce the turn-off loss, turn-on loss of the IGCT switch and also alleviate the reverse recovery stress of the diode. The ZCT circuit is therefore suitable for increasing the
Applied Power Electronics Conference and Exposition Annual IEEE Conference, 2000
A new family of snubberless turn-off GTO, the resonant gate commutated thyristor (RGCT) is propos... more A new family of snubberless turn-off GTO, the resonant gate commutated thyristor (RGCT) is proposed and investigated. By using a transient high commutation voltage, the RGCT can achieve unity turn-off gain and snubberless turn-off capability-even with a relatively high gate loop stray inductance. Therefore, conventional GTOs with flexible gate lead can be used to achieve state-of-the-art performance similar to that
This paper proposes a new configuration to help a GTO to achieve unity turn-off gain and snubberl... more This paper proposes a new configuration to help a GTO to achieve unity turn-off gain and snubberless turn-off capability by utilizing a series connected discrete diode. The maximum turn-off gate voltage, which is crucial for realizing a high commutation di/dt in the GTO gate loop, can be increased from about 20 V of a GTO's gate-cathode breakdown to a voltage
The emitter turn-off thyristor (ETO) is a novel hybrid MOS-bipolar high power semiconductor devic... more The emitter turn-off thyristor (ETO) is a novel hybrid MOS-bipolar high power semiconductor device with the advantages of gate turn-off thyristor's (GTO) high voltage and high current capabilities, and the ease of control of a MOS gate. The introduction of the emitter turn-off technology in the ETO also results in a significantly improved speed and reverse biased safe operating area (RBSOA). Other promising features of the ETO include the high-voltage current saturation capability and on-device current sensing capability. These technological advancements are achieved through the change of fundamental device physics that govern the operation of high power GTO devices through a low cost and efficient packaging technology. Numerical analysis and experimental demonstration of the ETO's unity turn-off gain capability are presented in this this paper
Legal Medicine - LEG MED, 1999
The MOS turn-off (MTOTM) thyristor is a novel hybrid MOS-bipolar high power semiconductor device ... more The MOS turn-off (MTOTM) thyristor is a novel hybrid MOS-bipolar high power semiconductor device with the advantages of the gate turn-off thyristor's (GTO) high voltage and high current capabilities, and the ease of control of a MOS gate. Voltage controlled turn-off of the GTO is realized by turning on the MOSFET. Significant simplification in the drive circuit is therefore expected for the MTO TM. Reduction or elimination of the dV/dt snubber is also demonstrated for the MTO. This paper analyzes the performance of the MTO TM and compares that with the conventional GTO
Power Electronics and Motion …, 2000
In this paper a comparison of three types of semiconductor devices suitable for high power applic... more In this paper a comparison of three types of semiconductor devices suitable for high power applications is presented. All of these devices feature high switching speed and snubberless turn-off capability. The devices compared include two high voltage insulated ...
IEEE Transactions on Power Electronics, 2003
Page 1. 30 IEEE TRANSACTIONS ON POWER ELECTRONICS, VOL. 18, NO. 1, JANUARY 2003 Analysis of the S... more Page 1. 30 IEEE TRANSACTIONS ON POWER ELECTRONICS, VOL. 18, NO. 1, JANUARY 2003 Analysis of the Snubberless Operation of the Emitter Turn-Off Thyristor (ETO) Yuxin Li, Member, IEEE, Alex Q. Huang, Senior Member, IEEE, and Kevin Motto ...
IEEE Transactions on Power Electronics, 2000
Page 1. IEEE TRANSACTIONS ON POWER ELECTRONICS, VOL. 15, NO. 3, MAY 2000 561 Experimental and Num... more Page 1. IEEE TRANSACTIONS ON POWER ELECTRONICS, VOL. 15, NO. 3, MAY 2000 561 Experimental and Numerical Study of the Emitter Turn-Off Thyristor (ETO) Yuxin Li, Student Member, IEEE, Alex Q. Huang, Senior Member, IEEE, and Kevin Motto ...
IEEE Transactions on Industry Applications, 2002
Naval Engineers Journal, 2008
APEC 2000. Fifteenth Annual IEEE Applied Power Electronics Conference and Exposition (Cat. No.00CH37058), 2000
Page 1. Comparison of the State-of-the-art High Power IGBTs, GCTs and ETOs Kevin Motto, Yuxin Li,... more Page 1. Comparison of the State-of-the-art High Power IGBTs, GCTs and ETOs Kevin Motto, Yuxin Li, and Alex Q. Huang Center for Power Electronics Systems The Bradley Department of Electrical and Computer Engineering ...
APEC 2001. Sixteenth Annual IEEE Applied Power Electronics Conference and Exposition (Cat. No.01CH37181), 2001
Page 1. High Frequency Operation of a Megawatt Voltage Source Inverter Equipped with ETOs Kevin M... more Page 1. High Frequency Operation of a Megawatt Voltage Source Inverter Equipped with ETOs Kevin Motto #1 , Yuxin Li #2 , Zhenxue Xu, Bin Zhang and Alex Q. Huang Center for Power Electronics System The Bradley Department ...
International Journal of Mass Spectrometry, 2001
This paper characterizes the integrated gate commutated thyristor (IGCT) device under the zero-cu... more This paper characterizes the integrated gate commutated thyristor (IGCT) device under the zero-current-transition (ZCT) soft switching condition for the first time. The test results show that ZCT soft switching can dramatically reduce the turn-off loss, turn-on loss of the IGCT switch and also alleviate the reverse recovery stress of the diode. The ZCT circuit is therefore suitable for increasing the
Applied Power Electronics Conference and Exposition Annual IEEE Conference, 2000
A new family of snubberless turn-off GTO, the resonant gate commutated thyristor (RGCT) is propos... more A new family of snubberless turn-off GTO, the resonant gate commutated thyristor (RGCT) is proposed and investigated. By using a transient high commutation voltage, the RGCT can achieve unity turn-off gain and snubberless turn-off capability-even with a relatively high gate loop stray inductance. Therefore, conventional GTOs with flexible gate lead can be used to achieve state-of-the-art performance similar to that
This paper proposes a new configuration to help a GTO to achieve unity turn-off gain and snubberl... more This paper proposes a new configuration to help a GTO to achieve unity turn-off gain and snubberless turn-off capability by utilizing a series connected discrete diode. The maximum turn-off gate voltage, which is crucial for realizing a high commutation di/dt in the GTO gate loop, can be increased from about 20 V of a GTO's gate-cathode breakdown to a voltage
The emitter turn-off thyristor (ETO) is a novel hybrid MOS-bipolar high power semiconductor devic... more The emitter turn-off thyristor (ETO) is a novel hybrid MOS-bipolar high power semiconductor device with the advantages of gate turn-off thyristor's (GTO) high voltage and high current capabilities, and the ease of control of a MOS gate. The introduction of the emitter turn-off technology in the ETO also results in a significantly improved speed and reverse biased safe operating area (RBSOA). Other promising features of the ETO include the high-voltage current saturation capability and on-device current sensing capability. These technological advancements are achieved through the change of fundamental device physics that govern the operation of high power GTO devices through a low cost and efficient packaging technology. Numerical analysis and experimental demonstration of the ETO's unity turn-off gain capability are presented in this this paper
Legal Medicine - LEG MED, 1999
The MOS turn-off (MTOTM) thyristor is a novel hybrid MOS-bipolar high power semiconductor device ... more The MOS turn-off (MTOTM) thyristor is a novel hybrid MOS-bipolar high power semiconductor device with the advantages of the gate turn-off thyristor's (GTO) high voltage and high current capabilities, and the ease of control of a MOS gate. Voltage controlled turn-off of the GTO is realized by turning on the MOSFET. Significant simplification in the drive circuit is therefore expected for the MTO TM. Reduction or elimination of the dV/dt snubber is also demonstrated for the MTO. This paper analyzes the performance of the MTO TM and compares that with the conventional GTO
Power Electronics and Motion …, 2000
In this paper a comparison of three types of semiconductor devices suitable for high power applic... more In this paper a comparison of three types of semiconductor devices suitable for high power applications is presented. All of these devices feature high switching speed and snubberless turn-off capability. The devices compared include two high voltage insulated ...
IEEE Transactions on Power Electronics, 2003
Page 1. 30 IEEE TRANSACTIONS ON POWER ELECTRONICS, VOL. 18, NO. 1, JANUARY 2003 Analysis of the S... more Page 1. 30 IEEE TRANSACTIONS ON POWER ELECTRONICS, VOL. 18, NO. 1, JANUARY 2003 Analysis of the Snubberless Operation of the Emitter Turn-Off Thyristor (ETO) Yuxin Li, Member, IEEE, Alex Q. Huang, Senior Member, IEEE, and Kevin Motto ...
IEEE Transactions on Power Electronics, 2000
Page 1. IEEE TRANSACTIONS ON POWER ELECTRONICS, VOL. 15, NO. 3, MAY 2000 561 Experimental and Num... more Page 1. IEEE TRANSACTIONS ON POWER ELECTRONICS, VOL. 15, NO. 3, MAY 2000 561 Experimental and Numerical Study of the Emitter Turn-Off Thyristor (ETO) Yuxin Li, Student Member, IEEE, Alex Q. Huang, Senior Member, IEEE, and Kevin Motto ...
IEEE Transactions on Industry Applications, 2002
Naval Engineers Journal, 2008