Khalil Safari-Anzabi - Academia.edu (original) (raw)
Uploads
Papers by Khalil Safari-Anzabi
Optics & Laser Technology
Abstract The feasibility of implementing an All-Optical (AO) XOR gate for 320 Gb/s data pulses us... more Abstract The feasibility of implementing an All-Optical (AO) XOR gate for 320 Gb/s data pulses using Quantum Dot (QD) based Reflective Semiconductor Optical Amplifiers (RSOAs) in a Folded Mach–Zehnder Interferometer (FMZI) is investigated using detailed numerical models. Detailed performance comparisons are made between the conventional QD-SOA based MZI XOR and the specific scheme. The influence of various parameters such as SOA length, input optical powers, rear-facet reflectivity, and bias current on the XOR gates output quality are investigated. The results indicate that the gain recovery time in the QD-RSOA can be reduced to approximately 50% of its value in the QD-SOA, which can help avoid restoring sophisticated gain recovery acceleration techniques. It is shown that at low input powers and high bit rates the MZI XOR fails to perform the logic operation, while the FMZI XOR can deliver a good performance at data rates as high as 320 Gb/s with reducing the power consumption of the structure. The simulations demonstrate an about 5 dB (1 dB) improvement on the XOR output extinction ratio (amplitude modulation) for 320 Gb/s input bit sequence. The combination of the ultrafast gain dynamics of QD materials with the inherent advantages of RSOA devices and using the former in the latter inside the high-performance FMZI can be utilized to realize power-efficient ultrafast signal processing and switching functions while being cascadable and scalable for constructing more complex AO circuits.
Journal of Lightwave Technology
The feasibility of implementing an All-Optical (AO) XOR gate for 320 Gb/s data pulses using Quant... more The feasibility of implementing an All-Optical (AO) XOR gate for 320 Gb/s data pulses using Quantum Dot (QD) based Reflective Semiconductor Optical Amplifiers (RSOAs) in a Folded Mach-Zehnder Interferometer (FMZI) is investigated using detailed numerical models. Detailed performance comparisons are made between the conventional QD-SOA based MZI XOR and the specific scheme. The influence of various parameters such as SOA length, input optical powers, rear-facet reflectivity, and bias current on the XOR gates output quality are investigated. The results indicate that the gain recovery time in the QD-RSOA can be reduced to approximately 50% of its value in the QD-SOA, which can help avoid restoring sophisticated gain recovery acceleration techniques. It is shown that at low input powers and high bit rates the MZI XOR fails to perform the logic operation, while the FMZI XOR can deliver a good performance at data rates as high as 320 Gb/s with reducing the power consumption of the structure. The simulations demonstrate an about 5 dB (1 dB) improvement on the XOR output extinction ratio (amplitude modulation) for 320 Gb/s input bit sequence. The combination of the ultrafast gain dynamics of QD materials with the inherent advantages of RSOA devices and using the former in the latter inside the high-performance FMZI can be utilized to realize power-efficient ultrafast signal processing and switching functions while being cascadable and scalable for constructing more complex AO circuits.
Journal of Lightwave Technology, 2019
A new time-domain wideband numerical model for simulation of quantum dot-reflective semiconductor... more A new time-domain wideband numerical model for simulation of quantum dot-reflective semiconductor optical amplifier (QD-RSOA) steady-state and dynamic behavior, is described. The model is used to investigate 1 ps full-width at half-maximum input Gaussian pulse amplification and also modulation cancellation. A large modulation-cancellation dynamic range of about 35 dB, is predicted for high input powers, which is not attainable in bulk and QW RSOAs. The model can be applied to traveling-wave and reflective QD-SOAs. The combination of the unique features of quantum dots and a reflective structure can be used to realize a colorless modulator for wavelength-division multiplexed passive optical networks (WDM PONs).
Optics & Laser Technology
Abstract The feasibility of implementing an All-Optical (AO) XOR gate for 320 Gb/s data pulses us... more Abstract The feasibility of implementing an All-Optical (AO) XOR gate for 320 Gb/s data pulses using Quantum Dot (QD) based Reflective Semiconductor Optical Amplifiers (RSOAs) in a Folded Mach–Zehnder Interferometer (FMZI) is investigated using detailed numerical models. Detailed performance comparisons are made between the conventional QD-SOA based MZI XOR and the specific scheme. The influence of various parameters such as SOA length, input optical powers, rear-facet reflectivity, and bias current on the XOR gates output quality are investigated. The results indicate that the gain recovery time in the QD-RSOA can be reduced to approximately 50% of its value in the QD-SOA, which can help avoid restoring sophisticated gain recovery acceleration techniques. It is shown that at low input powers and high bit rates the MZI XOR fails to perform the logic operation, while the FMZI XOR can deliver a good performance at data rates as high as 320 Gb/s with reducing the power consumption of the structure. The simulations demonstrate an about 5 dB (1 dB) improvement on the XOR output extinction ratio (amplitude modulation) for 320 Gb/s input bit sequence. The combination of the ultrafast gain dynamics of QD materials with the inherent advantages of RSOA devices and using the former in the latter inside the high-performance FMZI can be utilized to realize power-efficient ultrafast signal processing and switching functions while being cascadable and scalable for constructing more complex AO circuits.
Journal of Lightwave Technology
The feasibility of implementing an All-Optical (AO) XOR gate for 320 Gb/s data pulses using Quant... more The feasibility of implementing an All-Optical (AO) XOR gate for 320 Gb/s data pulses using Quantum Dot (QD) based Reflective Semiconductor Optical Amplifiers (RSOAs) in a Folded Mach-Zehnder Interferometer (FMZI) is investigated using detailed numerical models. Detailed performance comparisons are made between the conventional QD-SOA based MZI XOR and the specific scheme. The influence of various parameters such as SOA length, input optical powers, rear-facet reflectivity, and bias current on the XOR gates output quality are investigated. The results indicate that the gain recovery time in the QD-RSOA can be reduced to approximately 50% of its value in the QD-SOA, which can help avoid restoring sophisticated gain recovery acceleration techniques. It is shown that at low input powers and high bit rates the MZI XOR fails to perform the logic operation, while the FMZI XOR can deliver a good performance at data rates as high as 320 Gb/s with reducing the power consumption of the structure. The simulations demonstrate an about 5 dB (1 dB) improvement on the XOR output extinction ratio (amplitude modulation) for 320 Gb/s input bit sequence. The combination of the ultrafast gain dynamics of QD materials with the inherent advantages of RSOA devices and using the former in the latter inside the high-performance FMZI can be utilized to realize power-efficient ultrafast signal processing and switching functions while being cascadable and scalable for constructing more complex AO circuits.
Journal of Lightwave Technology, 2019
A new time-domain wideband numerical model for simulation of quantum dot-reflective semiconductor... more A new time-domain wideband numerical model for simulation of quantum dot-reflective semiconductor optical amplifier (QD-RSOA) steady-state and dynamic behavior, is described. The model is used to investigate 1 ps full-width at half-maximum input Gaussian pulse amplification and also modulation cancellation. A large modulation-cancellation dynamic range of about 35 dB, is predicted for high input powers, which is not attainable in bulk and QW RSOAs. The model can be applied to traveling-wave and reflective QD-SOAs. The combination of the unique features of quantum dots and a reflective structure can be used to realize a colorless modulator for wavelength-division multiplexed passive optical networks (WDM PONs).