Abdul Faheem Khan - Academia.edu (original) (raw)

Uploads

Papers by Abdul Faheem Khan

Research paper thumbnail of Precipitation Hardening in (α+ߩ and Lead-Tin Brasses

Journal of Applied Sciences, 2001

Abstract: Commercially available two different compositions of(a+β) and lead-tin-brasses were sol... more Abstract: Commercially available two different compositions of(a+β) and lead-tin-brasses were solution treated at 815°C for ½ hr and aged at 400 and 500°C for ½ and 1 hr. The tensile test data were analyzed to find the UTS (ultimate tensile strength), elastic modulus, ...

Bookmarks Related papers MentionsView impact

Research paper thumbnail of Effect of annealing on structural, optical and electrical properties of nanostructured Ge thin films

Applied Surface Science, 2010

Bookmarks Related papers MentionsView impact

Research paper thumbnail of Effect of annealing on structural, optical and electrical properties of nanostructured Ge thin films

Applied Surface Science, 2010

Bookmarks Related papers MentionsView impact

Research paper thumbnail of Quenched-in Lattice Defects in Pure Aluminium

Rana etal.: Quenched-in Lattice Defects in Pure Aluminium and T(K) respectively and a is the temp... more Rana etal.: Quenched-in Lattice Defects in Pure Aluminium and T(K) respectively and a is the temperature coefficient of the resistance. This increase in resistivity of metals is due to more thermal agitation of atoms and structural disorder to diffract and scatter the electrons at high ...

Bookmarks Related papers MentionsView impact

Research paper thumbnail of Heat Treatment Effects on Mechanical Properties of (α+ߩ and Lead-tin Brasses

Journal of Applied Sciences, 2001

Bookmarks Related papers MentionsView impact

Research paper thumbnail of Characteristics of electron beam evaporated nanocrystalline SnO 2 thin films annealed in air

Applied Surface Science, 2010

Bookmarks Related papers MentionsView impact

Research paper thumbnail of Characterization of rf-sputtered indium tin oxide thin films

Materials Chemistry and Physics, 2004

Bookmarks Related papers MentionsView impact

Research paper thumbnail of Nanostructured multilayer TiO 2–Ge films with quantum confinement effects for photovoltaic applications

Journal of Colloid and Interface Science, 2010

Multilayer TiO(2)-Ge thin films have been deposited using electron beam evaporation and resistive... more Multilayer TiO(2)-Ge thin films have been deposited using electron beam evaporation and resistive heating. The thickness of the TiO(2) layers is 20 nm, while the thickness of the Ge layers varies from 2 to 20 nm with a step of 2 nm away from the substrate. These films were characterized by studying their optical, electrical, and structural properties. The films were annealed at various temperatures up to 500 degrees C for 2 h. The films are amorphous up to an annealing temperature of 400 degrees C, although Raman spectra suggest short-range ordering (and adjustments). The films annealed at 450 and 500 degrees C exhibit X-ray reflections of Ge and anatase TiO(2). Illumination in sunlight increases the conductivity of the as-deposited and annealed films. The band gap of the amorphous films changes from 1.27 to 1.41 eV up to 400 degrees C; the major contribution is possibly through direct transition. Two band gap regimes are clearly seen after 450 and 500 degrees C, which have been assigned to an indirect band gap at about 1.2 eV and a direct band gap at about 1.8 eV. Conductivity of the multilayer films has been higher than that of pure Ge film. The conductivity increases with annealing temperature with abrupt increase at about 380 degrees C. The results imply that the TiO(2)-Ge multilayer films may be employed as heterojunctions with tunable band gap energy as related to quantum confinement effects.

Bookmarks Related papers MentionsView impact

Research paper thumbnail of Heat Treatment Effects on Mechanical Properties of (alpha+ß) and Lead-tin Brasses

Bookmarks Related papers MentionsView impact

Research paper thumbnail of Quenched-in lattice defects in pure aluminium (99.999

Materials & Design, 2003

Bookmarks Related papers MentionsView impact

Research paper thumbnail of Effect of substrate on processing of multigun sputter deposited, near-stoichiometric Ni 2MnGa thin films

Thin Solid Films, 2010

Near-stoichiometric Ni2MnGa thin films were sputter deposited with a multi-gun sputter deposition... more Near-stoichiometric Ni2MnGa thin films were sputter deposited with a multi-gun sputter deposition system onto sapphire, silicon dioxide and silicon substrates and exposed to heat treatments in vacuum. The multi-gun setup was proven to be feasible for switching compositions quickly and reliably. Using chemical, morphological, magnetic and structural characterisation methods the effects of the different substrates on the Ni2MnGa film properties

Bookmarks Related papers MentionsView impact

Research paper thumbnail of Microstructural Changes in Hadfield Steel

Journal of Applied Sciences, 2001

Bookmarks Related papers MentionsView impact

Research paper thumbnail of Effect of annealing on electrical resistivity of rf-magnetron sputtered nanostructured SnO 2 thin films

Applied Surface Science, 2009

Bookmarks Related papers MentionsView impact

Research paper thumbnail of Electrical resistivity behavior in Ni–25 at.% Cr alloy

Materials Chemistry and Physics, 2003

Bookmarks Related papers MentionsView impact

Research paper thumbnail of Quenched-in Lattice Defects in Pure Aluminium

Journal of Applied Sciences, 2001

Rana etal.: Quenched-in Lattice Defects in Pure Aluminium and T(K) respectively and a is the temp... more Rana etal.: Quenched-in Lattice Defects in Pure Aluminium and T(K) respectively and a is the temperature coefficient of the resistance. This increase in resistivity of metals is due to more thermal agitation of atoms and structural disorder to diffract and scatter the electrons at high ...

Bookmarks Related papers MentionsView impact

Research paper thumbnail of Effect of annealing on electrical resistivity of rf-magnetron sputtered nanostructured SnO2 thin films

Applied Surface Science, 2009

Bookmarks Related papers MentionsView impact

Research paper thumbnail of Optical Characterization of rf-Magnetron Sputtered Nanostructured SnO 2 Thin Films

Chinese Physics Letters, 2009

Page 1. Optical Characterization of rf-Magnetron Sputtered Nanostructured SnO2 Thin Films This ar... more Page 1. Optical Characterization of rf-Magnetron Sputtered Nanostructured SnO2 Thin Films This article has been downloaded from IOPscience. Please scroll down to see the full text article. 2009 Chinese Phys. Lett. 26 077803 (http://iopscience.iop.org/0256-307X/26/7/077803) ...

Bookmarks Related papers MentionsView impact

Research paper thumbnail of Precipitation Hardening in (alpha+ß) and Lead-Tin Brasses

Bookmarks Related papers MentionsView impact

Research paper thumbnail of Precipitation Hardening in (α+ߩ and Lead-Tin Brasses

Journal of Applied Sciences, 2001

Abstract: Commercially available two different compositions of(a+β) and lead-tin-brasses were sol... more Abstract: Commercially available two different compositions of(a+β) and lead-tin-brasses were solution treated at 815°C for ½ hr and aged at 400 and 500°C for ½ and 1 hr. The tensile test data were analyzed to find the UTS (ultimate tensile strength), elastic modulus, ...

Bookmarks Related papers MentionsView impact

Research paper thumbnail of Effect of annealing on structural, optical and electrical properties of nanostructured Ge thin films

Applied Surface Science, 2010

Bookmarks Related papers MentionsView impact

Research paper thumbnail of Effect of annealing on structural, optical and electrical properties of nanostructured Ge thin films

Applied Surface Science, 2010

Bookmarks Related papers MentionsView impact

Research paper thumbnail of Quenched-in Lattice Defects in Pure Aluminium

Rana etal.: Quenched-in Lattice Defects in Pure Aluminium and T(K) respectively and a is the temp... more Rana etal.: Quenched-in Lattice Defects in Pure Aluminium and T(K) respectively and a is the temperature coefficient of the resistance. This increase in resistivity of metals is due to more thermal agitation of atoms and structural disorder to diffract and scatter the electrons at high ...

Bookmarks Related papers MentionsView impact

Research paper thumbnail of Heat Treatment Effects on Mechanical Properties of (α+ߩ and Lead-tin Brasses

Journal of Applied Sciences, 2001

Bookmarks Related papers MentionsView impact

Research paper thumbnail of Characteristics of electron beam evaporated nanocrystalline SnO 2 thin films annealed in air

Applied Surface Science, 2010

Bookmarks Related papers MentionsView impact

Research paper thumbnail of Characterization of rf-sputtered indium tin oxide thin films

Materials Chemistry and Physics, 2004

Bookmarks Related papers MentionsView impact

Research paper thumbnail of Nanostructured multilayer TiO 2–Ge films with quantum confinement effects for photovoltaic applications

Journal of Colloid and Interface Science, 2010

Multilayer TiO(2)-Ge thin films have been deposited using electron beam evaporation and resistive... more Multilayer TiO(2)-Ge thin films have been deposited using electron beam evaporation and resistive heating. The thickness of the TiO(2) layers is 20 nm, while the thickness of the Ge layers varies from 2 to 20 nm with a step of 2 nm away from the substrate. These films were characterized by studying their optical, electrical, and structural properties. The films were annealed at various temperatures up to 500 degrees C for 2 h. The films are amorphous up to an annealing temperature of 400 degrees C, although Raman spectra suggest short-range ordering (and adjustments). The films annealed at 450 and 500 degrees C exhibit X-ray reflections of Ge and anatase TiO(2). Illumination in sunlight increases the conductivity of the as-deposited and annealed films. The band gap of the amorphous films changes from 1.27 to 1.41 eV up to 400 degrees C; the major contribution is possibly through direct transition. Two band gap regimes are clearly seen after 450 and 500 degrees C, which have been assigned to an indirect band gap at about 1.2 eV and a direct band gap at about 1.8 eV. Conductivity of the multilayer films has been higher than that of pure Ge film. The conductivity increases with annealing temperature with abrupt increase at about 380 degrees C. The results imply that the TiO(2)-Ge multilayer films may be employed as heterojunctions with tunable band gap energy as related to quantum confinement effects.

Bookmarks Related papers MentionsView impact

Research paper thumbnail of Heat Treatment Effects on Mechanical Properties of (alpha+ß) and Lead-tin Brasses

Bookmarks Related papers MentionsView impact

Research paper thumbnail of Quenched-in lattice defects in pure aluminium (99.999

Materials & Design, 2003

Bookmarks Related papers MentionsView impact

Research paper thumbnail of Effect of substrate on processing of multigun sputter deposited, near-stoichiometric Ni 2MnGa thin films

Thin Solid Films, 2010

Near-stoichiometric Ni2MnGa thin films were sputter deposited with a multi-gun sputter deposition... more Near-stoichiometric Ni2MnGa thin films were sputter deposited with a multi-gun sputter deposition system onto sapphire, silicon dioxide and silicon substrates and exposed to heat treatments in vacuum. The multi-gun setup was proven to be feasible for switching compositions quickly and reliably. Using chemical, morphological, magnetic and structural characterisation methods the effects of the different substrates on the Ni2MnGa film properties

Bookmarks Related papers MentionsView impact

Research paper thumbnail of Microstructural Changes in Hadfield Steel

Journal of Applied Sciences, 2001

Bookmarks Related papers MentionsView impact

Research paper thumbnail of Effect of annealing on electrical resistivity of rf-magnetron sputtered nanostructured SnO 2 thin films

Applied Surface Science, 2009

Bookmarks Related papers MentionsView impact

Research paper thumbnail of Electrical resistivity behavior in Ni–25 at.% Cr alloy

Materials Chemistry and Physics, 2003

Bookmarks Related papers MentionsView impact

Research paper thumbnail of Quenched-in Lattice Defects in Pure Aluminium

Journal of Applied Sciences, 2001

Rana etal.: Quenched-in Lattice Defects in Pure Aluminium and T(K) respectively and a is the temp... more Rana etal.: Quenched-in Lattice Defects in Pure Aluminium and T(K) respectively and a is the temperature coefficient of the resistance. This increase in resistivity of metals is due to more thermal agitation of atoms and structural disorder to diffract and scatter the electrons at high ...

Bookmarks Related papers MentionsView impact

Research paper thumbnail of Effect of annealing on electrical resistivity of rf-magnetron sputtered nanostructured SnO2 thin films

Applied Surface Science, 2009

Bookmarks Related papers MentionsView impact

Research paper thumbnail of Optical Characterization of rf-Magnetron Sputtered Nanostructured SnO 2 Thin Films

Chinese Physics Letters, 2009

Page 1. Optical Characterization of rf-Magnetron Sputtered Nanostructured SnO2 Thin Films This ar... more Page 1. Optical Characterization of rf-Magnetron Sputtered Nanostructured SnO2 Thin Films This article has been downloaded from IOPscience. Please scroll down to see the full text article. 2009 Chinese Phys. Lett. 26 077803 (http://iopscience.iop.org/0256-307X/26/7/077803) ...

Bookmarks Related papers MentionsView impact

Research paper thumbnail of Precipitation Hardening in (alpha+ß) and Lead-Tin Brasses

Bookmarks Related papers MentionsView impact