Kurt Linden - Academia.edu (original) (raw)
Papers by Kurt Linden
Proceedings of SPIE, Feb 7, 2008
The papers included in this volume were part of the technical conference cited on the cover and t... more The papers included in this volume were part of the technical conference cited on the cover and title page. Papers were selected and subject to review by the editors and conference program committee. Some conference presentations may not be available for publication. The papers published in these proceedings reflect the work and thoughts of the authors and are published herein as submitted. The publisher is not responsible for the validity of the information or for any outcomes resulting from reliance thereon.
Proceedings of SPIE, Feb 12, 2009
Proceedings of SPIE, Feb 8, 2007
The papers included in this volume were part of the technical conference cited on the cover and t... more The papers included in this volume were part of the technical conference cited on the cover and title page. Papers were selected and subject to review by the editors and conference program committee. Some conference presentations may not be available for publication. The papers published in these proceedings reflect the work and thoughts of the authors and are published herein as submitted. The publisher is not responsible for the validity of the information or for any outcomes resulting from reliance thereon.
This paper describes recent developments i n the technology of Pb-salt d i o d e l a s e r s whic... more This paper describes recent developments i n the technology of Pb-salt d i o d e l a s e r s which have l e d t o s i g n i f i c a n t improvements i n r e l i a b i l i t y and l i f e t i m e , and t o improved operation at very long wavelengths. A combination of packaging and contacting-metallurgy improvements h a s l e d t o d i o d e l a s e r s t h a t a r e s t a b l e b o t h i n terms of temperature cycling and shelf-storage time. Lasers cycled over 500 times between 7 7 K and 3 0 0 K have exhibited no measurable
I 2.1 LIST OF TABLES Summary of crystals grown during the early part of the contract period. 2.2 ... more I 2.1 LIST OF TABLES Summary of crystals grown during the early part of the contract period. 2.2 Calibration data for thermal probe voltages obtained from Van der Pauw.
A new annealing technique, compositional interdiffusion (CID), has been used to fabricate high pe... more A new annealing technique, compositional interdiffusion (CID), has been used to fabricate high performance, single heterostructure diode lasers of Pb1-xSnxSe and PbS1-xSex. These alloy semiconductors cover the infrared region from 3 to 30 µm The improved tunable diode lasers exhibit CW operating temperatures as high as 130K with bias currents limited to 2 Amps. Using temperature variation single lasers have been tuned as much as 400 cm-1, with some lasers having been tuned over the entire 9-12 µm atmospheric window region. Single-ended, CW power outputs as high as 38 mW at a bias current of 2 Amps have been observed from PbS1-xSexlasers fabricated by the new technique. It is shown that the CID effect should occur in other Pb-salt type alloy semiconductors as well.
Optical Engineering, Oct 1, 1984
We have fabricated monolithic four-element diode laser arrays of PbS09Se01, emitting 100 mW of cw... more We have fabricated monolithic four-element diode laser arrays of PbS09Se01, emitting 100 mW of cw power per array end at 4 A in the 4 to 5µm spectral region. Corresponding to an external quantum efficiency of 20%, these arrays demonstrate the feasibility of upscaling output power levels by the parallelization of stripe-geometry diode lasers on a single crystal wafer. Such high power arrays are useful in applications that require high illumination levels in very narrow spectral ranges. By varying the material type and composition, any emitting region between approximately 4 and 8µm can be obtained with this material system.
Solid-state Electronics, Oct 1, 1976
Abstract GaAs/tungsten Schottky barrier mixer diodes have been fabricated in a self-passivated, g... more Abstract GaAs/tungsten Schottky barrier mixer diodes have been fabricated in a self-passivated, grown guard layer configuration. These devices have exhibited 0.64 eV barrier voltages together with the ability to withstand nanosecond RF pulses in excess of 8 ergs with no resulting deterioration in noise figure performance. Such high burnout resistance properties are attributed to the absence of any significant metallurgical interaction between the GaAs and tungsten at temperatures as high as 600°C. The somewhat high noise figures exhibited by these devices are attributed to interface states, possibly arising from strain.
Journal of Applied Physics, May 1, 1969
The phase diagram of the ternary system Pb–Sn–Te has been investigated by experimentally determin... more The phase diagram of the ternary system Pb–Sn–Te has been investigated by experimentally determining the liquidus surface and verifying that certain solidus compositions fall on the pseudobinary PbxSn1-xTe line. This information is useful for growing the pseudobinary compound lead-tin telluride from nonstoichiometric melt compositions.
Proceedings of SPIE - The International Society for Optical Engineering, Dec 1, 1998
This paper describes a family of tunable diode lasers which emit in the 3-30 μm spectral region. ... more This paper describes a family of tunable diode lasers which emit in the 3-30 μm spectral region. The general region of operation of a diode laser is determined by the composition of the crystal from which it is made. Three types of crystals are used to obtain coverage over the entire 3-30 μm region: Pb1−xCdxS (covering from below 3 μm to 4.4 μm) PbS1−xSex (covering from 4.4 to 8.6 μm) and Pb1−xSnxSe (covering from 8.6 μm to 30 μm). The variation of laser emission frequency with crystal composition is illustrated in figure 1.This paper describes a family of tunable diode lasers which emit in the 3-30 μm spectral region. The general region of operation of a diode laser is determined by the composition of the crystal from which it is made. Three types of crystals are used to obtain coverage over the entire 3-30 μm region: Pb1−xCdxS (covering from below 3 μm to 4.4 μm) PbS1−xSex (covering from 4.4 to 8.6 μm) and Pb1−xSnxSe (covering from 8.6 μm to 30 μm). The variation of laser emission frequency with crystal composition is illustrated in figure 1.
Journal of The Electrochemical Society, 1973
Proceedings of SPIE, Feb 7, 2008
The papers included in this volume were part of the technical conference cited on the cover and t... more The papers included in this volume were part of the technical conference cited on the cover and title page. Papers were selected and subject to review by the editors and conference program committee. Some conference presentations may not be available for publication. The papers published in these proceedings reflect the work and thoughts of the authors and are published herein as submitted. The publisher is not responsible for the validity of the information or for any outcomes resulting from reliance thereon.
Proceedings of SPIE, Feb 12, 2009
Proceedings of SPIE, Feb 8, 2007
The papers included in this volume were part of the technical conference cited on the cover and t... more The papers included in this volume were part of the technical conference cited on the cover and title page. Papers were selected and subject to review by the editors and conference program committee. Some conference presentations may not be available for publication. The papers published in these proceedings reflect the work and thoughts of the authors and are published herein as submitted. The publisher is not responsible for the validity of the information or for any outcomes resulting from reliance thereon.
This paper describes recent developments i n the technology of Pb-salt d i o d e l a s e r s whic... more This paper describes recent developments i n the technology of Pb-salt d i o d e l a s e r s which have l e d t o s i g n i f i c a n t improvements i n r e l i a b i l i t y and l i f e t i m e , and t o improved operation at very long wavelengths. A combination of packaging and contacting-metallurgy improvements h a s l e d t o d i o d e l a s e r s t h a t a r e s t a b l e b o t h i n terms of temperature cycling and shelf-storage time. Lasers cycled over 500 times between 7 7 K and 3 0 0 K have exhibited no measurable
I 2.1 LIST OF TABLES Summary of crystals grown during the early part of the contract period. 2.2 ... more I 2.1 LIST OF TABLES Summary of crystals grown during the early part of the contract period. 2.2 Calibration data for thermal probe voltages obtained from Van der Pauw.
A new annealing technique, compositional interdiffusion (CID), has been used to fabricate high pe... more A new annealing technique, compositional interdiffusion (CID), has been used to fabricate high performance, single heterostructure diode lasers of Pb1-xSnxSe and PbS1-xSex. These alloy semiconductors cover the infrared region from 3 to 30 µm The improved tunable diode lasers exhibit CW operating temperatures as high as 130K with bias currents limited to 2 Amps. Using temperature variation single lasers have been tuned as much as 400 cm-1, with some lasers having been tuned over the entire 9-12 µm atmospheric window region. Single-ended, CW power outputs as high as 38 mW at a bias current of 2 Amps have been observed from PbS1-xSexlasers fabricated by the new technique. It is shown that the CID effect should occur in other Pb-salt type alloy semiconductors as well.
Optical Engineering, Oct 1, 1984
We have fabricated monolithic four-element diode laser arrays of PbS09Se01, emitting 100 mW of cw... more We have fabricated monolithic four-element diode laser arrays of PbS09Se01, emitting 100 mW of cw power per array end at 4 A in the 4 to 5µm spectral region. Corresponding to an external quantum efficiency of 20%, these arrays demonstrate the feasibility of upscaling output power levels by the parallelization of stripe-geometry diode lasers on a single crystal wafer. Such high power arrays are useful in applications that require high illumination levels in very narrow spectral ranges. By varying the material type and composition, any emitting region between approximately 4 and 8µm can be obtained with this material system.
Solid-state Electronics, Oct 1, 1976
Abstract GaAs/tungsten Schottky barrier mixer diodes have been fabricated in a self-passivated, g... more Abstract GaAs/tungsten Schottky barrier mixer diodes have been fabricated in a self-passivated, grown guard layer configuration. These devices have exhibited 0.64 eV barrier voltages together with the ability to withstand nanosecond RF pulses in excess of 8 ergs with no resulting deterioration in noise figure performance. Such high burnout resistance properties are attributed to the absence of any significant metallurgical interaction between the GaAs and tungsten at temperatures as high as 600°C. The somewhat high noise figures exhibited by these devices are attributed to interface states, possibly arising from strain.
Journal of Applied Physics, May 1, 1969
The phase diagram of the ternary system Pb–Sn–Te has been investigated by experimentally determin... more The phase diagram of the ternary system Pb–Sn–Te has been investigated by experimentally determining the liquidus surface and verifying that certain solidus compositions fall on the pseudobinary PbxSn1-xTe line. This information is useful for growing the pseudobinary compound lead-tin telluride from nonstoichiometric melt compositions.
Proceedings of SPIE - The International Society for Optical Engineering, Dec 1, 1998
This paper describes a family of tunable diode lasers which emit in the 3-30 μm spectral region. ... more This paper describes a family of tunable diode lasers which emit in the 3-30 μm spectral region. The general region of operation of a diode laser is determined by the composition of the crystal from which it is made. Three types of crystals are used to obtain coverage over the entire 3-30 μm region: Pb1−xCdxS (covering from below 3 μm to 4.4 μm) PbS1−xSex (covering from 4.4 to 8.6 μm) and Pb1−xSnxSe (covering from 8.6 μm to 30 μm). The variation of laser emission frequency with crystal composition is illustrated in figure 1.This paper describes a family of tunable diode lasers which emit in the 3-30 μm spectral region. The general region of operation of a diode laser is determined by the composition of the crystal from which it is made. Three types of crystals are used to obtain coverage over the entire 3-30 μm region: Pb1−xCdxS (covering from below 3 μm to 4.4 μm) PbS1−xSex (covering from 4.4 to 8.6 μm) and Pb1−xSnxSe (covering from 8.6 μm to 30 μm). The variation of laser emission frequency with crystal composition is illustrated in figure 1.
Journal of The Electrochemical Society, 1973