Kyösti Väkeväinen - Academia.edu (original) (raw)
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Papers by Kyösti Väkeväinen
Heat Transfer: Volume 4, 2005
ABSTRACT
Journal of Applied Physics, 1998
Defect formation has been studied in nitrogen-implanted III-V compound semiconductor material InP... more Defect formation has been studied in nitrogen-implanted III-V compound semiconductor material InP. Sulphur-doped n-type (100) InP samples were implanted at room temperature with 30 keV 15N+ion doses of 1014-1016 N atoms cm-2. The implanted samples were subjected to isochronal vacuum annealing in the temperature range of 450-650 °C. The annealing behavior of nitrogen atom distributions, implantation-induced displacements of indium atoms,
2009 16th Asia-Pacific Software Engineering Conference, 2009
Requirements engineering and testing offer two complementary views of system development, and can... more Requirements engineering and testing offer two complementary views of system development, and can, therefore, benefit from each other. This paper describes the lessons Metso learned from jointly improving requirements and testing processes. The goal of the process improvement was to increase the quality of R&D work. The new requirements and testing processes were piloted in an R&D project. The usage of the new processes removed the risk of doing double work, improved the visibility of the project status and the effectiveness of the project. The experiences of the pilot project suggest that the good results were mainly due to linking requirements and testing concurrently at process, people, and practice levels. It was essential that the new requirements and testing processes were integrated throughout the entire R&D project. In order to integrate the requirements and testing activities, critical roles and responsibilities were defined. Furthermore, we identified a set of good practices that helped perform the new processes. Software engineering; requirements engineering; software testing; process improvement; case study I. 2009 16th Asia-Pacific Software Engineering Conference
Heat Transfer: Volume 4, 2005
ABSTRACT
Journal of Applied Physics, 1998
Defect formation has been studied in nitrogen-implanted III-V compound semiconductor material InP... more Defect formation has been studied in nitrogen-implanted III-V compound semiconductor material InP. Sulphur-doped n-type (100) InP samples were implanted at room temperature with 30 keV 15N+ion doses of 1014-1016 N atoms cm-2. The implanted samples were subjected to isochronal vacuum annealing in the temperature range of 450-650 °C. The annealing behavior of nitrogen atom distributions, implantation-induced displacements of indium atoms,
2009 16th Asia-Pacific Software Engineering Conference, 2009
Requirements engineering and testing offer two complementary views of system development, and can... more Requirements engineering and testing offer two complementary views of system development, and can, therefore, benefit from each other. This paper describes the lessons Metso learned from jointly improving requirements and testing processes. The goal of the process improvement was to increase the quality of R&D work. The new requirements and testing processes were piloted in an R&D project. The usage of the new processes removed the risk of doing double work, improved the visibility of the project status and the effectiveness of the project. The experiences of the pilot project suggest that the good results were mainly due to linking requirements and testing concurrently at process, people, and practice levels. It was essential that the new requirements and testing processes were integrated throughout the entire R&D project. In order to integrate the requirements and testing activities, critical roles and responsibilities were defined. Furthermore, we identified a set of good practices that helped perform the new processes. Software engineering; requirements engineering; software testing; process improvement; case study I. 2009 16th Asia-Pacific Software Engineering Conference