L. Hrubčín - Academia.edu (original) (raw)
Papers by L. Hrubčín
APPLIED PHYSICS OF CONDENSED MATTER (APCOM 2021), 2021
We fabricated and studied 4H-SiC Schottky diodes based on high quality epitaxial layer. We used t... more We fabricated and studied 4H-SiC Schottky diodes based on high quality epitaxial layer. We used two different thicknesses of the epitaxial layer, 25 m and 50 m. Detectors have Ni Schottky contacts with 3 mm of diameter. The current voltage characteristics in forward and reverse direction were measured at room temperature and detectors show current density about 10-10 A/cm-2. Both detectors were connected to the spectrometric chain and the energy calibration was realized utilizing 226 Ra-particle radioisotope source. Following, detectors were used for detection of Xe ions with energy from 30 MeV up to 165 MeV. The pulse height defect in detectors was observed up to 40% at maximum ion energy.
Journal of Electrical Engineering, 2015
The contribution is focused on the diagnostics of structures with a heterojunction between amorph... more The contribution is focused on the diagnostics of structures with a heterojunction between amorphous and crystalline silicon prepared by HIT (Heterojunction with an Intrinsic Thin layer) technology. The samples were irradiated by Xe ions with energy 167 MeV and doses from 5 × 108 cm−2 to 5 × 1010 cm−2. Radiation defects induced in the bulk of Si and at the hydrogenated amorphous silicon and crystalline silicon (a-Si:H/c-Si) interface were identified by Deep Level Transient Spectroscopy (DLTS). Radiation induced A-centre traps, boron vacancy traps and different types of divacancies with a high value of activation energy were observed. With an increased fluence of heavy ions the nature and density of the radiation induced defects was changed.
Bezpecnost Jaderne Energie, 2014
Applied Surface Science, 2021
Abstract Schottky barrier detectors based on a high-quality 4H-SiC epitaxial layer with varied th... more Abstract Schottky barrier detectors based on a high-quality 4H-SiC epitaxial layer with varied thickness up to 70 μm were studied. The detectors had front-side circular Ni/Au Schottky contacts and a back-side full-area Ti/Pt/Au ohmic contact. Current-voltage characteristics in the reverse and forward directions of prepared detector structures were measured. The typical reverse current of the detector structure was below 50 pA at room temperature. The Schottky barrier height, series resistance and ideality factor were evaluated from the forward part of the current-voltage characteristics, and they were 1.3 eV, 1.33, and 638 Ω, respectively. Capacitance-voltage measurement of the detectors up to 600 V was also realized. This provided data to calculate the depletion width, concentration profile and barrier height. The lowest doping concentration of about 7 × 1013 cm−3 was determined. The spectrometric performance of the Schottky barrier detector structures was analyzed using an α-particle radioisotope source. The detector structures demonstrated a high energy resolution below 20 keV in the full width at half maximum for 5.5 MeV α-particles.
Materials Science in Semiconductor Processing
2016 11th International Conference on Advanced Semiconductor Devices & Microsystems (ASDAM), 2016
We fabricated and characterized 4H-SiC Schottky diodes as a spectrometric detector of a-particles... more We fabricated and characterized 4H-SiC Schottky diodes as a spectrometric detector of a-particles. A Schottky contact of Ni/Au of 1.4 mm in diameter was used. Current-voltage characteristics of the detector were measured and a current density lower than 25 nAcm<sup>−2</sup> was observed at room temperature. A <sup>226</sup>Ra used as a source of a-particles within the energy range between 4.6 MeV and 7.7 MeVfor detector testing. The energy resolution below 48 keV was measured for 7.7 MeV a-particles. The detector was irradiated by <sup>132</sup> Xe<sup>23+</sup> ions with energy of 165 MeV and fluencies of 5×10<sup>9</sup> cm <sup>2</sup> and 1.5× 10<sup>10</sup> cm<sup>2</sup>. Spectra of α-particles were measured after irradiation and significant degradation of energy resolution was observed.
In this paper we have focused on characteristics of detectors based on 4H-SiC semiconductor. The ... more In this paper we have focused on characteristics of detectors based on 4H-SiC semiconductor. The typical thickness of the active layer was between 25 ×m and 100 ×m. Circular Schottky contacts with diameters of 2.0 mm and 3.0 mm were prepared by evaporation of Au/Ni double layer. The reverse and forward current-voltage and also capacitance-voltage characteristics were measured at room temperature up to 600 V. The doping concentration profile was calculated. The obtained concentration of doping was below 1times1014cm−31 \times 10^{14} cm^{-3}1times1014cm−3. The detection properties of 4H-SiC particle detector were tested using two radioisotopes: 241Am and 238Pu.
APPLIED PHYSICS OF CONDENSED MATTER (APCOM 2019)
We fabricated and electrically characterized 4H-SiC Schottky diodes based on high quality epitaxi... more We fabricated and electrically characterized 4H-SiC Schottky diodes based on high quality epitaxial layer. Current-voltage characteristic in forward and reverse direction was measured and calculation of Schottky barrier height, ideality factor and series resistance were performed. From the capacitance-voltage measurement we determined thickness of the space charge region vs. reverse bias and calculated doping concentration profile of 4H-SiC diode.
RAD Association Journal, 2016
Приборы и техника эксперимента, 2015
Описана методика изготовления и приведены результаты исследования параметров детекторов (диаметро... more Описана методика изготовления и приведены результаты исследования параметров детекторов (диаметром 1 мм, толщиной 0.1 мм) на основе высокочистых эпитаксиальных слоев политипа 4H-SiC. Разработанные детекторы обладают хорошими спектрометрическими характеристиками при регистрации -частиц в широком диапазоне энергий. Приводится также результат измерения спектра -квантов 241Am.
Vacuum, 1996
Amorphous SiC was prepared by plasma enhanced chemical vapour deposition of SiH4 and CH4. The pro... more Amorphous SiC was prepared by plasma enhanced chemical vapour deposition of SiH4 and CH4. The properties of the SiC deposits were studied using a combination of infrared (IR), RBS, ERD (electron recoiling detection) and AES measurement. Infra red spectra showed the presence of SiC, SiH and CH bonds. The compositions of the silicon, carbon and hydrogen in the films were
Instruments and Experimental Techniques
APPLIED PHYSICS OF CONDENSED MATTER (APCOM 2021), 2021
We fabricated and studied 4H-SiC Schottky diodes based on high quality epitaxial layer. We used t... more We fabricated and studied 4H-SiC Schottky diodes based on high quality epitaxial layer. We used two different thicknesses of the epitaxial layer, 25 m and 50 m. Detectors have Ni Schottky contacts with 3 mm of diameter. The current voltage characteristics in forward and reverse direction were measured at room temperature and detectors show current density about 10-10 A/cm-2. Both detectors were connected to the spectrometric chain and the energy calibration was realized utilizing 226 Ra-particle radioisotope source. Following, detectors were used for detection of Xe ions with energy from 30 MeV up to 165 MeV. The pulse height defect in detectors was observed up to 40% at maximum ion energy.
Journal of Electrical Engineering, 2015
The contribution is focused on the diagnostics of structures with a heterojunction between amorph... more The contribution is focused on the diagnostics of structures with a heterojunction between amorphous and crystalline silicon prepared by HIT (Heterojunction with an Intrinsic Thin layer) technology. The samples were irradiated by Xe ions with energy 167 MeV and doses from 5 × 108 cm−2 to 5 × 1010 cm−2. Radiation defects induced in the bulk of Si and at the hydrogenated amorphous silicon and crystalline silicon (a-Si:H/c-Si) interface were identified by Deep Level Transient Spectroscopy (DLTS). Radiation induced A-centre traps, boron vacancy traps and different types of divacancies with a high value of activation energy were observed. With an increased fluence of heavy ions the nature and density of the radiation induced defects was changed.
Bezpecnost Jaderne Energie, 2014
Applied Surface Science, 2021
Abstract Schottky barrier detectors based on a high-quality 4H-SiC epitaxial layer with varied th... more Abstract Schottky barrier detectors based on a high-quality 4H-SiC epitaxial layer with varied thickness up to 70 μm were studied. The detectors had front-side circular Ni/Au Schottky contacts and a back-side full-area Ti/Pt/Au ohmic contact. Current-voltage characteristics in the reverse and forward directions of prepared detector structures were measured. The typical reverse current of the detector structure was below 50 pA at room temperature. The Schottky barrier height, series resistance and ideality factor were evaluated from the forward part of the current-voltage characteristics, and they were 1.3 eV, 1.33, and 638 Ω, respectively. Capacitance-voltage measurement of the detectors up to 600 V was also realized. This provided data to calculate the depletion width, concentration profile and barrier height. The lowest doping concentration of about 7 × 1013 cm−3 was determined. The spectrometric performance of the Schottky barrier detector structures was analyzed using an α-particle radioisotope source. The detector structures demonstrated a high energy resolution below 20 keV in the full width at half maximum for 5.5 MeV α-particles.
Materials Science in Semiconductor Processing
2016 11th International Conference on Advanced Semiconductor Devices & Microsystems (ASDAM), 2016
We fabricated and characterized 4H-SiC Schottky diodes as a spectrometric detector of a-particles... more We fabricated and characterized 4H-SiC Schottky diodes as a spectrometric detector of a-particles. A Schottky contact of Ni/Au of 1.4 mm in diameter was used. Current-voltage characteristics of the detector were measured and a current density lower than 25 nAcm<sup>−2</sup> was observed at room temperature. A <sup>226</sup>Ra used as a source of a-particles within the energy range between 4.6 MeV and 7.7 MeVfor detector testing. The energy resolution below 48 keV was measured for 7.7 MeV a-particles. The detector was irradiated by <sup>132</sup> Xe<sup>23+</sup> ions with energy of 165 MeV and fluencies of 5×10<sup>9</sup> cm <sup>2</sup> and 1.5× 10<sup>10</sup> cm<sup>2</sup>. Spectra of α-particles were measured after irradiation and significant degradation of energy resolution was observed.
In this paper we have focused on characteristics of detectors based on 4H-SiC semiconductor. The ... more In this paper we have focused on characteristics of detectors based on 4H-SiC semiconductor. The typical thickness of the active layer was between 25 ×m and 100 ×m. Circular Schottky contacts with diameters of 2.0 mm and 3.0 mm were prepared by evaporation of Au/Ni double layer. The reverse and forward current-voltage and also capacitance-voltage characteristics were measured at room temperature up to 600 V. The doping concentration profile was calculated. The obtained concentration of doping was below 1times1014cm−31 \times 10^{14} cm^{-3}1times1014cm−3. The detection properties of 4H-SiC particle detector were tested using two radioisotopes: 241Am and 238Pu.
APPLIED PHYSICS OF CONDENSED MATTER (APCOM 2019)
We fabricated and electrically characterized 4H-SiC Schottky diodes based on high quality epitaxi... more We fabricated and electrically characterized 4H-SiC Schottky diodes based on high quality epitaxial layer. Current-voltage characteristic in forward and reverse direction was measured and calculation of Schottky barrier height, ideality factor and series resistance were performed. From the capacitance-voltage measurement we determined thickness of the space charge region vs. reverse bias and calculated doping concentration profile of 4H-SiC diode.
RAD Association Journal, 2016
Приборы и техника эксперимента, 2015
Описана методика изготовления и приведены результаты исследования параметров детекторов (диаметро... more Описана методика изготовления и приведены результаты исследования параметров детекторов (диаметром 1 мм, толщиной 0.1 мм) на основе высокочистых эпитаксиальных слоев политипа 4H-SiC. Разработанные детекторы обладают хорошими спектрометрическими характеристиками при регистрации -частиц в широком диапазоне энергий. Приводится также результат измерения спектра -квантов 241Am.
Vacuum, 1996
Amorphous SiC was prepared by plasma enhanced chemical vapour deposition of SiH4 and CH4. The pro... more Amorphous SiC was prepared by plasma enhanced chemical vapour deposition of SiH4 and CH4. The properties of the SiC deposits were studied using a combination of infrared (IR), RBS, ERD (electron recoiling detection) and AES measurement. Infra red spectra showed the presence of SiC, SiH and CH bonds. The compositions of the silicon, carbon and hydrogen in the films were
Instruments and Experimental Techniques