L. Hrubčín - Profile on Academia.edu (original) (raw)

Papers by L. Hrubčín

Radiation Damage of SiC Detectors Irradiated with Xe Ions and Neutrons

Physics of Atomic Nuclei

APPLIED PHYSICS OF CONDENSED MATTER (APCOM 2021), 2021

We fabricated and studied 4H-SiC Schottky diodes based on high quality epitaxial layer. We used t... more We fabricated and studied 4H-SiC Schottky diodes based on high quality epitaxial layer. We used two different thicknesses of the epitaxial layer, 25 m and 50 m. Detectors have Ni Schottky contacts with 3 mm of diameter. The current voltage characteristics in forward and reverse direction were measured at room temperature and detectors show current density about 10-10 A/cm-2. Both detectors were connected to the spectrometric chain and the energy calibration was realized utilizing 226 Ra-particle radioisotope source. Following, detectors were used for detection of Xe ions with energy from 30 MeV up to 165 MeV. The pulse height defect in detectors was observed up to 40% at maximum ion energy.

Journal of Electrical Engineering, 2015

The contribution is focused on the diagnostics of structures with a heterojunction between amorph... more The contribution is focused on the diagnostics of structures with a heterojunction between amorphous and crystalline silicon prepared by HIT (Heterojunction with an Intrinsic Thin layer) technology. The samples were irradiated by Xe ions with energy 167 MeV and doses from 5 × 108 cm−2 to 5 × 1010 cm−2. Radiation defects induced in the bulk of Si and at the hydrogenated amorphous silicon and crystalline silicon (a-Si:H/c-Si) interface were identified by Deep Level Transient Spectroscopy (DLTS). Radiation induced A-centre traps, boron vacancy traps and different types of divacancies with a high value of activation energy were observed. With an increased fluence of heavy ions the nature and density of the radiation induced defects was changed.

Electrically active defects in the amorphous silicon/crystalline silicon heterojunction solar cell after heavy Xe ions irradiation

Silicon detectors for multilayered spectrometers of charged particles

Bezpecnost Jaderne Energie, 2014

Silicon carbide (SiC) and nitrogen-doped silicon carbide (SiC(N)) films were deposited on p-type ... more Silicon carbide (SiC) and nitrogen-doped silicon carbide (SiC(N)) films were deposited on p-type Si(100) substrates at various deposition conditions by means of plasma enhanced chemical vapor deposition (PECVD) technology using silane (SiH4) methane (CH4) and ammonium (NH3) gas precursors. The concentration of elements in films was determined by RBS and ERD analytical method simultaneously. Chemical compositions were analyzed by FT-IR and Raman spectroscopy. The current-voltage (I-V) characteristics of structures before and after Xe ion and neutron irradiation were measured.

Study of Schottky barrier detectors based on a high quality 4H-SiC epitaxial layer with different thickness

Applied Surface Science, 2021

Abstract Schottky barrier detectors based on a high-quality 4H-SiC epitaxial layer with varied th... more Abstract Schottky barrier detectors based on a high-quality 4H-SiC epitaxial layer with varied thickness up to 70 μm were studied. The detectors had front-side circular Ni/Au Schottky contacts and a back-side full-area Ti/Pt/Au ohmic contact. Current-voltage characteristics in the reverse and forward directions of prepared detector structures were measured. The typical reverse current of the detector structure was below 50 pA at room temperature. The Schottky barrier height, series resistance and ideality factor were evaluated from the forward part of the current-voltage characteristics, and they were 1.3 eV, 1.33, and 638 Ω, respectively. Capacitance-voltage measurement of the detectors up to 600 V was also realized. This provided data to calculate the depletion width, concentration profile and barrier height. The lowest doping concentration of about 7 × 1013 cm−3 was determined. The spectrometric performance of the Schottky barrier detector structures was analyzed using an α-particle radioisotope source. The detector structures demonstrated a high energy resolution below 20 keV in the full width at half maximum for 5.5 MeV α-particles.

ELECTRO-PHYSICAL PROPERTIES OF MIM STRUCTURES AFTER Xe HEAVY ION IRRADIATION

The contribution is focused on the diagnostics of structures with a heterojunction between amorph... more The contribution is focused on the diagnostics of structures with a heterojunction between amorphous and crystalline silicon prepared by HIT (Heterojunction with an Intrinsic Thin layer) technology. The samples were irradiated by Xe ions with energy 167 MeV and doses from 5 × 10 8 cm -2 to 5 × 10 10 cm -2 . Current and capacitance measurements revealed the effect of radiation defects induced in the bulk of Si and at the a-Si:H/c-Si interface upon the electrophysical properties of the structures. On increasing the dose of irradiation the contribution of generation-recombination current from the amorphous part of silicon was growing. An increase in the density of interface traps and their electrical activity were observed in temperature dependent capacitance measurements in a wide frequency range of the measuring signal. K e y w o r d s: Silicon HIT solar cell, amorphous-crystalline silicon heterostructure, heterojunction with intrinsic thinlayer, high-energy heavy ions irradiation, radiation hardness

Investigation of radiation hardness of Si and SiC detectors by Xe ion beam

Temperature dependence of electrical behaviour of inhomogeneous Ni/Au/4H–SiC Schottky diodes

Materials Science in Semiconductor Processing

Particle detectors based on 4H-SiC epitaxial layer and their properties

2016 11th International Conference on Advanced Semiconductor Devices & Microsystems (ASDAM), 2016

We fabricated and characterized 4H-SiC Schottky diodes as a spectrometric detector of a-particles... more We fabricated and characterized 4H-SiC Schottky diodes as a spectrometric detector of a-particles. A Schottky contact of Ni/Au of 1.4 mm in diameter was used. Current-voltage characteristics of the detector were measured and a current density lower than 25 nAcm⁻² was observed at room temperature. A ²²⁶Ra used as a source of a-particles within the energy range between 4.6 MeV and 7.7 MeVfor detector testing. The energy resolution below 48 keV was measured for 7.7 MeV a-particles. The detector was irradiated by ¹³² Xe²³⁺ ions with energy of 165 MeV and fluencies of 5×10⁹ cm ² and 1.5× 10¹⁰ cm². Spectra of α-particles were measured after irradiation and significant degradation of energy resolution was observed.

The Schottky barrier detectors based on 4H-SiC epitaxial layer

In this paper we have focused on characteristics of detectors based on 4H-SiC semiconductor. The ... more In this paper we have focused on characteristics of detectors based on 4H-SiC semiconductor. The typical thickness of the active layer was between 25 ×m and 100 ×m. Circular Schottky contacts with diameters of 2.0 mm and 3.0 mm were prepared by evaporation of Au/Ni double layer. The reverse and forward current-voltage and also capacitance-voltage characteristics were measured at room temperature up to 600 V. The doping concentration profile was calculated. The obtained concentration of doping was below 1times1014cm−31 \times 10^{14} cm^{-3}1times1014cm−3. The detection properties of 4H-SiC particle detector were tested using two radioisotopes: 241Am and 238Pu.

APPLIED PHYSICS OF CONDENSED MATTER (APCOM 2019)

We fabricated and electrically characterized 4H-SiC Schottky diodes based on high quality epitaxi... more We fabricated and electrically characterized 4H-SiC Schottky diodes based on high quality epitaxial layer. Current-voltage characteristic in forward and reverse direction was measured and calculation of Schottky barrier height, ideality factor and series resistance were performed. From the capacitance-voltage measurement we determined thickness of the space charge region vs. reverse bias and calculated doping concentration profile of 4H-SiC diode.

English

RAD Association Journal, 2016

Характеристики детекторов на основе карбида кремния

Приборы и техника эксперимента, 2015

Описана методика изготовления и приведены результаты исследования параметров детекторов (диаметро... more Описана методика изготовления и приведены результаты исследования параметров детекторов (диаметром 1 мм, толщиной 0.1 мм) на основе высокочистых эпитаксиальных слоев политипа 4H-SiC. Разработанные детекторы обладают хорошими спектрометрическими характеристиками при регистрации -частиц в широком диапазоне энергий. Приводится также результат измерения спектра -квантов 241Am.

Properties of amorphous silicon carbide films prepared by PECVD

Vacuum, 1996

Amorphous SiC was prepared by plasma enhanced chemical vapour deposition of SiH4 and CH4. The pro... more Amorphous SiC was prepared by plasma enhanced chemical vapour deposition of SiH4 and CH4. The properties of the SiC deposits were studied using a combination of infrared (IR), RBS, ERD (electron recoiling detection) and AES measurement. Infra red spectra showed the presence of SiC, SiH and CH bonds. The compositions of the silicon, carbon and hydrogen in the films were

Schottky barrier height inhomogeneity in 4H-SiC surface barrier detectors

Applied Surface Science

The Amplitude Defect of SiC Detectors during the Recording of Accelerated Xe Ions

Physics of Atomic Nuclei

Schottky barrier detectors based on high quality 4H-SiC semiconductor: Electrical and detection properties

Applied Surface Science

Radiation Damage of SiC Detectors Irradiated with Xe Ions and Neutrons

Physics of Atomic Nuclei

APPLIED PHYSICS OF CONDENSED MATTER (APCOM 2021), 2021

We fabricated and studied 4H-SiC Schottky diodes based on high quality epitaxial layer. We used t... more We fabricated and studied 4H-SiC Schottky diodes based on high quality epitaxial layer. We used two different thicknesses of the epitaxial layer, 25 m and 50 m. Detectors have Ni Schottky contacts with 3 mm of diameter. The current voltage characteristics in forward and reverse direction were measured at room temperature and detectors show current density about 10-10 A/cm-2. Both detectors were connected to the spectrometric chain and the energy calibration was realized utilizing 226 Ra-particle radioisotope source. Following, detectors were used for detection of Xe ions with energy from 30 MeV up to 165 MeV. The pulse height defect in detectors was observed up to 40% at maximum ion energy.

Journal of Electrical Engineering, 2015

The contribution is focused on the diagnostics of structures with a heterojunction between amorph... more The contribution is focused on the diagnostics of structures with a heterojunction between amorphous and crystalline silicon prepared by HIT (Heterojunction with an Intrinsic Thin layer) technology. The samples were irradiated by Xe ions with energy 167 MeV and doses from 5 × 108 cm−2 to 5 × 1010 cm−2. Radiation defects induced in the bulk of Si and at the hydrogenated amorphous silicon and crystalline silicon (a-Si:H/c-Si) interface were identified by Deep Level Transient Spectroscopy (DLTS). Radiation induced A-centre traps, boron vacancy traps and different types of divacancies with a high value of activation energy were observed. With an increased fluence of heavy ions the nature and density of the radiation induced defects was changed.

Electrically active defects in the amorphous silicon/crystalline silicon heterojunction solar cell after heavy Xe ions irradiation

Silicon detectors for multilayered spectrometers of charged particles

Bezpecnost Jaderne Energie, 2014

Silicon carbide (SiC) and nitrogen-doped silicon carbide (SiC(N)) films were deposited on p-type ... more Silicon carbide (SiC) and nitrogen-doped silicon carbide (SiC(N)) films were deposited on p-type Si(100) substrates at various deposition conditions by means of plasma enhanced chemical vapor deposition (PECVD) technology using silane (SiH4) methane (CH4) and ammonium (NH3) gas precursors. The concentration of elements in films was determined by RBS and ERD analytical method simultaneously. Chemical compositions were analyzed by FT-IR and Raman spectroscopy. The current-voltage (I-V) characteristics of structures before and after Xe ion and neutron irradiation were measured.

Study of Schottky barrier detectors based on a high quality 4H-SiC epitaxial layer with different thickness

Applied Surface Science, 2021

Abstract Schottky barrier detectors based on a high-quality 4H-SiC epitaxial layer with varied th... more Abstract Schottky barrier detectors based on a high-quality 4H-SiC epitaxial layer with varied thickness up to 70 μm were studied. The detectors had front-side circular Ni/Au Schottky contacts and a back-side full-area Ti/Pt/Au ohmic contact. Current-voltage characteristics in the reverse and forward directions of prepared detector structures were measured. The typical reverse current of the detector structure was below 50 pA at room temperature. The Schottky barrier height, series resistance and ideality factor were evaluated from the forward part of the current-voltage characteristics, and they were 1.3 eV, 1.33, and 638 Ω, respectively. Capacitance-voltage measurement of the detectors up to 600 V was also realized. This provided data to calculate the depletion width, concentration profile and barrier height. The lowest doping concentration of about 7 × 1013 cm−3 was determined. The spectrometric performance of the Schottky barrier detector structures was analyzed using an α-particle radioisotope source. The detector structures demonstrated a high energy resolution below 20 keV in the full width at half maximum for 5.5 MeV α-particles.

ELECTRO-PHYSICAL PROPERTIES OF MIM STRUCTURES AFTER Xe HEAVY ION IRRADIATION

The contribution is focused on the diagnostics of structures with a heterojunction between amorph... more The contribution is focused on the diagnostics of structures with a heterojunction between amorphous and crystalline silicon prepared by HIT (Heterojunction with an Intrinsic Thin layer) technology. The samples were irradiated by Xe ions with energy 167 MeV and doses from 5 × 10 8 cm -2 to 5 × 10 10 cm -2 . Current and capacitance measurements revealed the effect of radiation defects induced in the bulk of Si and at the a-Si:H/c-Si interface upon the electrophysical properties of the structures. On increasing the dose of irradiation the contribution of generation-recombination current from the amorphous part of silicon was growing. An increase in the density of interface traps and their electrical activity were observed in temperature dependent capacitance measurements in a wide frequency range of the measuring signal. K e y w o r d s: Silicon HIT solar cell, amorphous-crystalline silicon heterostructure, heterojunction with intrinsic thinlayer, high-energy heavy ions irradiation, radiation hardness

Investigation of radiation hardness of Si and SiC detectors by Xe ion beam

Temperature dependence of electrical behaviour of inhomogeneous Ni/Au/4H–SiC Schottky diodes

Materials Science in Semiconductor Processing

Particle detectors based on 4H-SiC epitaxial layer and their properties

2016 11th International Conference on Advanced Semiconductor Devices & Microsystems (ASDAM), 2016

We fabricated and characterized 4H-SiC Schottky diodes as a spectrometric detector of a-particles... more We fabricated and characterized 4H-SiC Schottky diodes as a spectrometric detector of a-particles. A Schottky contact of Ni/Au of 1.4 mm in diameter was used. Current-voltage characteristics of the detector were measured and a current density lower than 25 nAcm⁻² was observed at room temperature. A ²²⁶Ra used as a source of a-particles within the energy range between 4.6 MeV and 7.7 MeVfor detector testing. The energy resolution below 48 keV was measured for 7.7 MeV a-particles. The detector was irradiated by ¹³² Xe²³⁺ ions with energy of 165 MeV and fluencies of 5×10⁹ cm ² and 1.5× 10¹⁰ cm². Spectra of α-particles were measured after irradiation and significant degradation of energy resolution was observed.

The Schottky barrier detectors based on 4H-SiC epitaxial layer

In this paper we have focused on characteristics of detectors based on 4H-SiC semiconductor. The ... more In this paper we have focused on characteristics of detectors based on 4H-SiC semiconductor. The typical thickness of the active layer was between 25 ×m and 100 ×m. Circular Schottky contacts with diameters of 2.0 mm and 3.0 mm were prepared by evaporation of Au/Ni double layer. The reverse and forward current-voltage and also capacitance-voltage characteristics were measured at room temperature up to 600 V. The doping concentration profile was calculated. The obtained concentration of doping was below 1times1014cm−31 \times 10^{14} cm^{-3}1times1014cm−3. The detection properties of 4H-SiC particle detector were tested using two radioisotopes: 241Am and 238Pu.

APPLIED PHYSICS OF CONDENSED MATTER (APCOM 2019)

We fabricated and electrically characterized 4H-SiC Schottky diodes based on high quality epitaxi... more We fabricated and electrically characterized 4H-SiC Schottky diodes based on high quality epitaxial layer. Current-voltage characteristic in forward and reverse direction was measured and calculation of Schottky barrier height, ideality factor and series resistance were performed. From the capacitance-voltage measurement we determined thickness of the space charge region vs. reverse bias and calculated doping concentration profile of 4H-SiC diode.

English

RAD Association Journal, 2016

Характеристики детекторов на основе карбида кремния

Приборы и техника эксперимента, 2015

Описана методика изготовления и приведены результаты исследования параметров детекторов (диаметро... more Описана методика изготовления и приведены результаты исследования параметров детекторов (диаметром 1 мм, толщиной 0.1 мм) на основе высокочистых эпитаксиальных слоев политипа 4H-SiC. Разработанные детекторы обладают хорошими спектрометрическими характеристиками при регистрации -частиц в широком диапазоне энергий. Приводится также результат измерения спектра -квантов 241Am.

Properties of amorphous silicon carbide films prepared by PECVD

Vacuum, 1996

Amorphous SiC was prepared by plasma enhanced chemical vapour deposition of SiH4 and CH4. The pro... more Amorphous SiC was prepared by plasma enhanced chemical vapour deposition of SiH4 and CH4. The properties of the SiC deposits were studied using a combination of infrared (IR), RBS, ERD (electron recoiling detection) and AES measurement. Infra red spectra showed the presence of SiC, SiH and CH bonds. The compositions of the silicon, carbon and hydrogen in the films were

Schottky barrier height inhomogeneity in 4H-SiC surface barrier detectors

Applied Surface Science

The Amplitude Defect of SiC Detectors during the Recording of Accelerated Xe Ions

Physics of Atomic Nuclei

Schottky barrier detectors based on high quality 4H-SiC semiconductor: Electrical and detection properties

Applied Surface Science