L. Kadinski - Academia.edu (original) (raw)

Papers by L. Kadinski

Research paper thumbnail of Bulk Growth Of Silicon Carbide Crystals: Analysis Of Growth Rate And Crystal Quality

MRS Proceedings, 1997

ABSTRACT

Research paper thumbnail of Modelling of the PVT-SiC Bulk Growth Process Taking into Account Global Heat Transfer, Mass Transport and Heat of Crystallization and Results on its Experimental Verification

Materials Science Forum, 1998

ABSTRACT

Research paper thumbnail of Algorithms and Models for Simulation of MOCVD of III-V Layers in the Planetary Reactor

Simulation of Semiconductor Devices and Processes, 1995

Research paper thumbnail of High Performance Computer Codes and their Application to Optimize Crystal Growth Processes, II

Numerical Flow Simulation II, 2001

ABSTRACT The rapid development on the information technology market implies a growing demand in q... more ABSTRACT The rapid development on the information technology market implies a growing demand in quantity and quality of semiconductor and optical crystalline material. For the correlated process development and optimization, numerical simulation is playing an essential role, with the necessity for further improvement of numerical techniques and capacities. The collaborative work presented in this paper numerically deals with important issues in the field of crystal growth like global simulation of bulk crystal growth and vapor phase epitaxy, phase transition problems, as well as new methods for high performance three-dimensional flow simulation. The different numerical codes applied were developed in a complementary way to cover a wide range of aspects important for crystal growth.

Research paper thumbnail of Reactor modeling

Research paper thumbnail of Digital X-Ray Imaging of SiC PVT Process: Analysis of Crystal Growth and Powder Source Degradation

Materials Science Forum, 2000

Research paper thumbnail of Growth Rate Control in SiC-Physical Vapor Transport Method Through Heat Transfer Modeling and Non-Stationary Process Conditions

Materials Science Forum, 2000

Research paper thumbnail of Impact of SiC Source Material on Temperature Field and Vapor Transport During SiC PVT Crystal Growth Process

Materials Science Forum, 2001

Research paper thumbnail of Numerical Simulation of Thermal Stress Formation During PVT-Growth of SiC Bulk Crystals

Materials Science Forum, 2001

Research paper thumbnail of Global Numerical Simulation of Heat and Mass Transfer during SiC Bulk Crystal PVT Growth

Materials Science Forum, 2000

Research paper thumbnail of In situ visualization and analysis of silicon carbide physical vapor transport growth using digital X-ray imaging

Research paper thumbnail of Heat transfer and mass transport in a multiwafer MOVPE reactor: modelling and experimental studies

Journal of Crystal Growth, 1997

Research paper thumbnail of Modeling and experimental verification of transport and deposition behavior during MOVPE of Ga1-xInxP in the Planetary Reactor

Journal of Crystal Growth, 2000

Research paper thumbnail of Advanced mathematical models for simulation of radiative heat transfer in CVD reactors

Journal of Crystal Growth, 1997

Research paper thumbnail of Parametric studies of III-nitride MOVPE in commercial vertical high-speed rotating disk reactors

Journal of Crystal Growth, 2004

Research paper thumbnail of On the influence of gas inlet configuration with respect to homogeneity in a horizontal single wafer MOVPE reactor

Journal of Crystal Growth, 2001

Research paper thumbnail of Transport and reaction behaviour in Aix-2000 planetary metalorganic vapour phase epitaxy reactor

Journal of Crystal Growth, 1995

Research paper thumbnail of In situ visualization and analysis of silicon carbide physical vapor transport growth using digital X-ray imaging

Journal of Crystal Growth, 2000

Research paper thumbnail of Modeling and experimental analysis of AlGaN MOVPE in commercial vertical high-speed rotating-disk reactors

Journal of Crystal Growth, 2004

Research paper thumbnail of Computational analysis of GaN/InGaN deposition in MOCVD vertical rotating disk reactors

Journal of Crystal Growth, 2004

Research paper thumbnail of Bulk Growth Of Silicon Carbide Crystals: Analysis Of Growth Rate And Crystal Quality

MRS Proceedings, 1997

ABSTRACT

Research paper thumbnail of Modelling of the PVT-SiC Bulk Growth Process Taking into Account Global Heat Transfer, Mass Transport and Heat of Crystallization and Results on its Experimental Verification

Materials Science Forum, 1998

ABSTRACT

Research paper thumbnail of Algorithms and Models for Simulation of MOCVD of III-V Layers in the Planetary Reactor

Simulation of Semiconductor Devices and Processes, 1995

Research paper thumbnail of High Performance Computer Codes and their Application to Optimize Crystal Growth Processes, II

Numerical Flow Simulation II, 2001

ABSTRACT The rapid development on the information technology market implies a growing demand in q... more ABSTRACT The rapid development on the information technology market implies a growing demand in quantity and quality of semiconductor and optical crystalline material. For the correlated process development and optimization, numerical simulation is playing an essential role, with the necessity for further improvement of numerical techniques and capacities. The collaborative work presented in this paper numerically deals with important issues in the field of crystal growth like global simulation of bulk crystal growth and vapor phase epitaxy, phase transition problems, as well as new methods for high performance three-dimensional flow simulation. The different numerical codes applied were developed in a complementary way to cover a wide range of aspects important for crystal growth.

Research paper thumbnail of Reactor modeling

Research paper thumbnail of Digital X-Ray Imaging of SiC PVT Process: Analysis of Crystal Growth and Powder Source Degradation

Materials Science Forum, 2000

Research paper thumbnail of Growth Rate Control in SiC-Physical Vapor Transport Method Through Heat Transfer Modeling and Non-Stationary Process Conditions

Materials Science Forum, 2000

Research paper thumbnail of Impact of SiC Source Material on Temperature Field and Vapor Transport During SiC PVT Crystal Growth Process

Materials Science Forum, 2001

Research paper thumbnail of Numerical Simulation of Thermal Stress Formation During PVT-Growth of SiC Bulk Crystals

Materials Science Forum, 2001

Research paper thumbnail of Global Numerical Simulation of Heat and Mass Transfer during SiC Bulk Crystal PVT Growth

Materials Science Forum, 2000

Research paper thumbnail of In situ visualization and analysis of silicon carbide physical vapor transport growth using digital X-ray imaging

Research paper thumbnail of Heat transfer and mass transport in a multiwafer MOVPE reactor: modelling and experimental studies

Journal of Crystal Growth, 1997

Research paper thumbnail of Modeling and experimental verification of transport and deposition behavior during MOVPE of Ga1-xInxP in the Planetary Reactor

Journal of Crystal Growth, 2000

Research paper thumbnail of Advanced mathematical models for simulation of radiative heat transfer in CVD reactors

Journal of Crystal Growth, 1997

Research paper thumbnail of Parametric studies of III-nitride MOVPE in commercial vertical high-speed rotating disk reactors

Journal of Crystal Growth, 2004

Research paper thumbnail of On the influence of gas inlet configuration with respect to homogeneity in a horizontal single wafer MOVPE reactor

Journal of Crystal Growth, 2001

Research paper thumbnail of Transport and reaction behaviour in Aix-2000 planetary metalorganic vapour phase epitaxy reactor

Journal of Crystal Growth, 1995

Research paper thumbnail of In situ visualization and analysis of silicon carbide physical vapor transport growth using digital X-ray imaging

Journal of Crystal Growth, 2000

Research paper thumbnail of Modeling and experimental analysis of AlGaN MOVPE in commercial vertical high-speed rotating-disk reactors

Journal of Crystal Growth, 2004

Research paper thumbnail of Computational analysis of GaN/InGaN deposition in MOCVD vertical rotating disk reactors

Journal of Crystal Growth, 2004