L. Piazzon - Academia.edu (original) (raw)
Papers by L. Piazzon
In this letter, a new output combining network for the implementation of a Doherty Power Amplifie... more In this letter, a new output combining network for the implementation of a Doherty Power Amplifier (DPA) is presented. The proposed topology simultaneously allows the active load modulation and the output matching, by adopting more realizable elements than the standard DPA, especially when high output power levels are required. The innovative design approach is demonstrated through a practical prototype realization based on GaN-HEMT devices. Experimental results have shown a 65%-48% efficiency at about 42-36 dBm output power with a gain compression lower than 1.5 dB from 1.95 to 2.25 GHz.
Proceedings of the 37th European Microwave Conference, EUMC, 2007
In this contribution a new method to synthesise multi- band multi-frequencies matching networks i... more In this contribution a new method to synthesise multi- band multi-frequencies matching networks is presented. The proposed approach is based on closed form and recursive relationships, allowing a direct CAD synthesis for a theoretical unlimited number of uncorrelated frequencies. Two experimental examples to design a single (2.45GHz) and double band (2 and 2.5GHz) matching networks controlling up to the respective
Microwave and Optical Technology Letters, 2011
ABSTRACT This letter deals with a GaAs monolithic microwave integrated circuit (MMIC) Doherty pow... more ABSTRACT This letter deals with a GaAs monolithic microwave integrated circuit (MMIC) Doherty power amplifier (DPA) for X-band systems.To the best of authors' knowledge, it represents the first DPA realization in the X-band frequency range. Experimental results showed a 30-dBm saturated output power and a drain efficiency greater than 53% at 9.5 GHz. Moreover, in the 6-dB power back-off (from 18 to 24 dBm input power), an amplitude modulation (AM/AM) distortion lower than 1 dB is also demonstrated with an average efficiency greater than 50%. © 2011 Wiley Periodicals, Inc. Microwave Opt Technol Lett 53:2665-2668, 2011; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.26306
2011 Microwaves, Radar and Remote Sensing Symposium, MRRS-2011 - Proceedings, 2011
ABSTRACT In this paper is presented an overview of Doherty amplifiers design for modern communica... more ABSTRACT In this paper is presented an overview of Doherty amplifiers design for modern communication systems and its evolution. In particular, the major drawbacks of such configuration are highlighted, discussing about some possible solving improvements. Several experimental results, both in hybrid and monolithic realizations are presented.
2014 International Workshop on Integrated Nonlinear Microwave and Millimetre-wave Circuits (INMMiC), 2014
ABSTRACT This paper investigates and presents comparative performance of three different digital ... more ABSTRACT This paper investigates and presents comparative performance of three different digital predistortion techniques for GaN-HEMT based Doherty power amplifier (DPA). Look-Up-Table (LUT), Memory polynomial (MP) and Volterra series based (VB) digital predistortion techniques are examined for the linearization of the DPA in LTE uplink applications. Experimental results demonstrate that for the same level of average power in the channel, LUT based DPD approach provides better linearization capability, in terms of both error vector magnitude (EVM) and adjacent channel power ratio (ACPR), with respect to the Memory polynomial and Volterra series based algorithms.
Microwave and Optical Technology Letters, 2000
International Journal of RF and Microwave Computer-Aided Engineering, 2008
Abstract In this article, the design of a dual-band PA developed in SiGe HBT technology and its s... more Abstract In this article, the design of a dual-band PA developed in SiGe HBT technology and its system level investigation are presented. Starting from an extensive nonlinear characterization at the device level, by which the optimum load conditions was inferred, an optimized amplifier capable to operate simultaneously at 2.45 and 3.5 GHz was designed. The designed amplifier exhibits in single-band mode operation 9.3 dBm and 13.4 dBm output power (1 dB compression point) at 2.45 GHz and 3.5 GHz, respectively. When ...
IEEE Transactions on Microwave Theory and Techniques, 2000
AbstractThe aim of this paper is to present a closed-form for-mulation suitable for a direct com... more AbstractThe aim of this paper is to present a closed-form for-mulation suitable for a direct computer-aided design synthesis of a Doherty amplifier employing a Class F design strategy for the Main (or Carrier) device. For this purpose, starting from a simpli-fied model for the ...
... Utilizing a Non-Uniform Distributed Topology", IEEEIMTT-S IMS, June 2007... more ... Utilizing a Non-Uniform Distributed Topology", IEEEIMTT-S IMS, June 2007 Page(s):615 - 18 [4] SN Prasad, S. 1.Amir, "Design Guidelines ... [7] M. Peroni, P. Romanini, A. Pantellini, L. Mariucci, A. Minotti, G. Ghione, V. Camarchia, E. Limiti, A. Serino, A. Chini, "Design, Fabrication ...
In this paper, the design, realization and test of a dualband Doherty power amplifier (DPA) will ... more In this paper, the design, realization and test of a dualband Doherty power amplifier (DPA) will be presented. The design has been realized in hybrid technology using a packaged GaN HEMT as active devices. A special attention will be focused on the passive structures involved in the DPA design (input power splitter, impedance transformer network, impedance inverter network and phase
2010 Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits, INMMiC 2010 - Conference Proceedings, 2010
In this contribution, the design of an X-Band MMIC Doherty Power Amplifier (DPA) in GaAs technolo... more In this contribution, the design of an X-Band MMIC Doherty Power Amplifier (DPA) in GaAs technology is presented. The DPA, based on 2250μm of total gate periphery, will be deeply described with the aim to highlight each design choice. The nonlinear simulation results shown a saturated output power and drain efficiency greater than 30dBm and 47%, respectively. Moreover, in the
In this letter, a new output combining network for the implementation of a Doherty Power Amplifie... more In this letter, a new output combining network for the implementation of a Doherty Power Amplifier (DPA) is presented. The proposed topology simultaneously allows the active load modulation and the output matching, by adopting more realizable elements than the standard DPA, especially when high output power levels are required. The innovative design approach is demonstrated through a practical prototype realization based on GaN-HEMT devices. Experimental results have shown a 65%-48% efficiency at about 42-36 dBm output power with a gain compression lower than 1.5 dB from 1.95 to 2.25 GHz.
Proceedings of the 37th European Microwave Conference, EUMC, 2007
In this contribution a new method to synthesise multi- band multi-frequencies matching networks i... more In this contribution a new method to synthesise multi- band multi-frequencies matching networks is presented. The proposed approach is based on closed form and recursive relationships, allowing a direct CAD synthesis for a theoretical unlimited number of uncorrelated frequencies. Two experimental examples to design a single (2.45GHz) and double band (2 and 2.5GHz) matching networks controlling up to the respective
Microwave and Optical Technology Letters, 2011
ABSTRACT This letter deals with a GaAs monolithic microwave integrated circuit (MMIC) Doherty pow... more ABSTRACT This letter deals with a GaAs monolithic microwave integrated circuit (MMIC) Doherty power amplifier (DPA) for X-band systems.To the best of authors' knowledge, it represents the first DPA realization in the X-band frequency range. Experimental results showed a 30-dBm saturated output power and a drain efficiency greater than 53% at 9.5 GHz. Moreover, in the 6-dB power back-off (from 18 to 24 dBm input power), an amplitude modulation (AM/AM) distortion lower than 1 dB is also demonstrated with an average efficiency greater than 50%. © 2011 Wiley Periodicals, Inc. Microwave Opt Technol Lett 53:2665-2668, 2011; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.26306
2011 Microwaves, Radar and Remote Sensing Symposium, MRRS-2011 - Proceedings, 2011
ABSTRACT In this paper is presented an overview of Doherty amplifiers design for modern communica... more ABSTRACT In this paper is presented an overview of Doherty amplifiers design for modern communication systems and its evolution. In particular, the major drawbacks of such configuration are highlighted, discussing about some possible solving improvements. Several experimental results, both in hybrid and monolithic realizations are presented.
2014 International Workshop on Integrated Nonlinear Microwave and Millimetre-wave Circuits (INMMiC), 2014
ABSTRACT This paper investigates and presents comparative performance of three different digital ... more ABSTRACT This paper investigates and presents comparative performance of three different digital predistortion techniques for GaN-HEMT based Doherty power amplifier (DPA). Look-Up-Table (LUT), Memory polynomial (MP) and Volterra series based (VB) digital predistortion techniques are examined for the linearization of the DPA in LTE uplink applications. Experimental results demonstrate that for the same level of average power in the channel, LUT based DPD approach provides better linearization capability, in terms of both error vector magnitude (EVM) and adjacent channel power ratio (ACPR), with respect to the Memory polynomial and Volterra series based algorithms.
Microwave and Optical Technology Letters, 2000
International Journal of RF and Microwave Computer-Aided Engineering, 2008
Abstract In this article, the design of a dual-band PA developed in SiGe HBT technology and its s... more Abstract In this article, the design of a dual-band PA developed in SiGe HBT technology and its system level investigation are presented. Starting from an extensive nonlinear characterization at the device level, by which the optimum load conditions was inferred, an optimized amplifier capable to operate simultaneously at 2.45 and 3.5 GHz was designed. The designed amplifier exhibits in single-band mode operation 9.3 dBm and 13.4 dBm output power (1 dB compression point) at 2.45 GHz and 3.5 GHz, respectively. When ...
IEEE Transactions on Microwave Theory and Techniques, 2000
AbstractThe aim of this paper is to present a closed-form for-mulation suitable for a direct com... more AbstractThe aim of this paper is to present a closed-form for-mulation suitable for a direct computer-aided design synthesis of a Doherty amplifier employing a Class F design strategy for the Main (or Carrier) device. For this purpose, starting from a simpli-fied model for the ...
... Utilizing a Non-Uniform Distributed Topology", IEEEIMTT-S IMS, June 2007... more ... Utilizing a Non-Uniform Distributed Topology", IEEEIMTT-S IMS, June 2007 Page(s):615 - 18 [4] SN Prasad, S. 1.Amir, "Design Guidelines ... [7] M. Peroni, P. Romanini, A. Pantellini, L. Mariucci, A. Minotti, G. Ghione, V. Camarchia, E. Limiti, A. Serino, A. Chini, "Design, Fabrication ...
In this paper, the design, realization and test of a dualband Doherty power amplifier (DPA) will ... more In this paper, the design, realization and test of a dualband Doherty power amplifier (DPA) will be presented. The design has been realized in hybrid technology using a packaged GaN HEMT as active devices. A special attention will be focused on the passive structures involved in the DPA design (input power splitter, impedance transformer network, impedance inverter network and phase
2010 Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits, INMMiC 2010 - Conference Proceedings, 2010
In this contribution, the design of an X-Band MMIC Doherty Power Amplifier (DPA) in GaAs technolo... more In this contribution, the design of an X-Band MMIC Doherty Power Amplifier (DPA) in GaAs technology is presented. The DPA, based on 2250μm of total gate periphery, will be deeply described with the aim to highlight each design choice. The nonlinear simulation results shown a saturated output power and drain efficiency greater than 30dBm and 47%, respectively. Moreover, in the