Ladawan Chotirat - Academia.edu (original) (raw)
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Papers by Ladawan Chotirat
International Journal of Adhesion and Adhesives, 2007
ABSTRACT
Journal of Nanotechnology
The vanadium dioxide (VO2) thin films were synthesized by sol-gel dipping on a glass slide substr... more The vanadium dioxide (VO2) thin films were synthesized by sol-gel dipping on a glass slide substrate at low temperature of 500°C in a vacuum tube furnace at a pressure of 2 × 10−3 mbar by 2-step calcination without an intermediate gas purging. Synthesis conditions, including temperature, vacuum pressure, and calcination steps in the vacuum tube furnace, were investigated to find the optimum condition that promoted the formation of VO2 phase. It was found that the 2nd calcination step was very important in realizing the monoclinic vanadium dioxide (VO2 (M)). The results of the valence electron analysis revealed the outstanding phase of VO2 and a small amount of V2O5 and V2O3 phases. The small crystallites of the VO2 were homogeneously distributed on the surface, and the grain was of an irregular shape of ∼220−380 nm in size. The film’s thickness was in a range of 69−74 nm. The film exhibited a metal-to-insulator transformation temperature of ∼68oC and good thermochromic property. Vis...
Materials Science Forum
Thin films of vanadium oxide were synthesized by DC magnetron sputtering on a glass slide. Proces... more Thin films of vanadium oxide were synthesized by DC magnetron sputtering on a glass slide. Process parameters including temperature, argon and oxygen ratio (Ar:O2) and base pressure were investigated. It was found that the control of sputtering base pressure is very important in realizing the pure VO2 (M) thin films. These thin films have grown at low base pressure of 5x10-6 mbar. The results of the valence electron analysis show the outstanding phase of VO2 and a small amount of V2O5 and V2O3 phases. The hysteresis loop of electrical resistance property of the VO2 thin films illustrated the quality of film, which is related to metal-insulator transition phase (MIT) at the transition temperature (Tc) of approximately 63°C. The sample was tested for its electrical properties by a four-probe setup with a temperature controller during heating and cooling cycles.
International Journal of Adhesion and Adhesives, 2007
ABSTRACT
Journal of Nanotechnology
The vanadium dioxide (VO2) thin films were synthesized by sol-gel dipping on a glass slide substr... more The vanadium dioxide (VO2) thin films were synthesized by sol-gel dipping on a glass slide substrate at low temperature of 500°C in a vacuum tube furnace at a pressure of 2 × 10−3 mbar by 2-step calcination without an intermediate gas purging. Synthesis conditions, including temperature, vacuum pressure, and calcination steps in the vacuum tube furnace, were investigated to find the optimum condition that promoted the formation of VO2 phase. It was found that the 2nd calcination step was very important in realizing the monoclinic vanadium dioxide (VO2 (M)). The results of the valence electron analysis revealed the outstanding phase of VO2 and a small amount of V2O5 and V2O3 phases. The small crystallites of the VO2 were homogeneously distributed on the surface, and the grain was of an irregular shape of ∼220−380 nm in size. The film’s thickness was in a range of 69−74 nm. The film exhibited a metal-to-insulator transformation temperature of ∼68oC and good thermochromic property. Vis...
Materials Science Forum
Thin films of vanadium oxide were synthesized by DC magnetron sputtering on a glass slide. Proces... more Thin films of vanadium oxide were synthesized by DC magnetron sputtering on a glass slide. Process parameters including temperature, argon and oxygen ratio (Ar:O2) and base pressure were investigated. It was found that the control of sputtering base pressure is very important in realizing the pure VO2 (M) thin films. These thin films have grown at low base pressure of 5x10-6 mbar. The results of the valence electron analysis show the outstanding phase of VO2 and a small amount of V2O5 and V2O3 phases. The hysteresis loop of electrical resistance property of the VO2 thin films illustrated the quality of film, which is related to metal-insulator transition phase (MIT) at the transition temperature (Tc) of approximately 63°C. The sample was tested for its electrical properties by a four-probe setup with a temperature controller during heating and cooling cycles.