Jamie Laird - Academia.edu (original) (raw)

Papers by Jamie Laird

Measurement of Transient Current Induced in Silicon Carbide Diodes using single-ion hit technique

Two generations of diamond detectors were fabricated for single ion implantation detection. The f... more Two generations of diamond detectors were fabricated for single ion implantation detection. The first generation detector employed a photolithographically defined Titanium/Gold coplanar interdigitated electrode structure while the second generation detector employed a buried conducting electrode array formed with 2 MeV Boron ion implantation. In this study electronic grade type IIa chemical vapour deposited single crystal diamond was compared with type Ib high pressure high temperature single crystal diamond and charge collection efficiencies were calculated with Ion Beam Induced Current (IBIC) analysis. In this IBIC analysis, a focussed micro-beam of 4 He + with energies ranging from 500 keV to 1.25 MeV was used in order to determine the charge collection efficiency analysis at various depths. Time-resolved IBIC analysis was also carried out to more explicitly investigate the mobility-lifetime product and slow detrapping processes in each crystal.

Observation of Single-event Transient Currents Induced by Neutron Irradiation in Si pin Photodiodes

Development of the measurement system for quasi-monoenergetic neutron beam induced single-event effects

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 2003

The high-speed current transients induced in SiC p-n diodes by 9 MeV Ni 2þ and 12 MeV Ni 3þ were ... more The high-speed current transients induced in SiC p-n diodes by 9 MeV Ni 2þ and 12 MeV Ni 3þ were measured using transient ion beam induced current (TIBIC). The amplitude of the TIBIC signals increases with increasing bias voltage. The transient current fall-time reduces with increasing bias voltage. These results are attributed to the increase in the electric field and the space-charge region with bias. However, the charge collection efficiency is below 100% even if the depletion width is greater than the Ni ion range. This can be attributed to the large nuclear stopping of Ni and recombination of the highly dense electron-hole pairs in the space-charge region. Our result indicates that pulse height defect (PHD) plays a significant role in the charge collection mechanism in these SiC p-n diodes for highly ionizing particles.

American Mineralogist, 2014

Impurities and crystal defects within the semiconducting bulk of a metal sulfide introduce energy... more Impurities and crystal defects within the semiconducting bulk of a metal sulfide introduce energy levels within the forbidden bandgap. These levels in turn control semiconducting type and local electrical properties within single and multi-phased sulfide assemblages. Heterogeneity in sulfide semiconductivity linked to these impurities can lead to p-n micro-junction formation and potential distributions near the surface that may alter redox reactivity. Secondary gold ore genesis via a micro-galvanic effect related to heterogeneity has in the past been hypothetically linked to such micro-junctions. Understanding these regions and their interaction with weathering fluids in the regolith for example requires large-scale imaging of potential distributions associated with near-surface micro-junctions and correlation with the responsible elemental distributions. Here we investigate the existence of micro-electronic junctions in a mixed sulfide assemblage using scanning laser beam induced current (LBIC) and correlate them with pyrite-chalcopyrite interfaces mapped using combined energy-dispersive spectroscopy (EDS) and wavelength-dispersive spectroscopy (WDS) on an electron hyper-probe. Junctions in a natural assemblage are positively identified for the first time.

Magmatic evolution and characteristics of magmatic fluid in the Qiagong porphyry system

A system for ultra-fast transient ion and pulsed laser current microscopies as a function of temperature

ABSTRACT

Materials Science Forum, 2010

Illustration of the experimental configuration for single event transient measurements. The ion m... more Illustration of the experimental configuration for single event transient measurements. The ion microbeam is scanned over the NMOS and the induced transient is recorded at each position.

2007 9th European Conference on Radiation and Its Effects on Components and Systems, 2007

The next generations of Martian rovers are to examine the polar regions where temperatures are ex... more The next generations of Martian rovers are to examine the polar regions where temperatures are extremely low and the absence of an earth-like atmosphere results in a plethora of radiation issues including Analogue Single Event Transients. To this end, a radiation-hardened, temperature compensated CMOS Single-On-Insulator operational amplifier was designed and fabricated using Honeywell's SOI V process. Broad beam heavy-ion tests at the University of Texas A&M were performed to ascertain the duration and severity of any SET's for low and high gain application. Ambiguity regarding the location of transient formation required the use of an ion microbeam to confirm a region of major concern in the internal bias circuitry.

Small, 2012

The incorporation of highly luminescent core-shell quantum dots (QDs) within a metal-organic fram... more The incorporation of highly luminescent core-shell quantum dots (QDs) within a metal-organic framework (MOF) is achieved through a one-pot method. Through appropriate surface functionalization, the QDs are solubilized within MOF-5 growth media. This permits the incorporation of the QDs within the evolving framework during the reaction. The resulting QD@MOF-5 composites are characterized using X-ray fluorescence, cross-sectional confocal microscopy, energy-dispersive X-ray spectroscopy, scanning electron microscopy, and small-angle X-ray scattering. The synergistic combination of luminescent QDs and the controlled porosity of MOF-5 in the QD@MOF-5 composites is harnessed within a prototype molecular sensor that can discriminate on the basis of molecular size. Nanocomposites Luminescent Metal-Organic Doped Quantum Dots 81 www.small-journal.com

Scanning picosecond tunable laser system for simulating MeV heavy ion-induced charge collection events as a function of temperature

Review of Scientific Instruments, 2008

A new methodology for using scanning picosecond laser microscopy to simulate cosmic ray induced r... more A new methodology for using scanning picosecond laser microscopy to simulate cosmic ray induced radiation effects as a function of temperature is described in detail. The built system is centered on diffraction-limited focusing of the output from a broadband (690-960 nm) ultrafast Ti:sapphire Tsunami laser pumped by a 532 nm Millennia laser. An acousto-optic modulator is used to provide pulse picking down to event rates necessary for the technologies and effects under study. The temperature dependence of the charge generation process for ions and photons is briefly reviewed and the need for wavelength tunability is discussed. An appropriate wavelength selection is critical for proper emulation of ion events over a wide temperature range. The system developed is detailed and illustrated by way of example on a deep-submicron complementary metal-oxide semiconductor test structure.

PLoS ONE, 2011

The aim of this study was to determine specific distribution of metals in the termite Tumuliterme... more The aim of this study was to determine specific distribution of metals in the termite Tumulitermes tumuli (Froggatt) and identify specific organs within the termite that host elevated metals and therefore play an important role in the regulation and transfer of these back into the environment. Like other insects, termites bio-accumulate essential metals to reinforce cuticular structures and utilize storage detoxification for other metals including Ca, P, Mg and K. Previously, Mn and Zn have been found concentrated in mandible tips and are associated with increased hardness whereas Ca, P, Mg and K are accumulated in Malpighian tubules. Using high resolution Particle Induced X-Ray Emission (PIXE) mapping of whole termites and Scanning Electron Microscope (SEM) Energy Dispersive X-ray (EDX) spot analysis, localised accumulations of metals in the termite T. tumuli were identified. Tumulitermes tumuli was found to have proportionally high Mn concentrations in mandible tips. Malpighian tubules had significant enrichment of Zn (1.6%), Mg (4.9%), P (6.8%), Ca (2.7%) and K (2.4%). Synchrotron scanning X-ray Fluorescence Microprobe (XFM) mapping demonstrated two different concretion types defined by the mutually exclusive presence of Ca and Zn. In-situ SEM EDX realisation of these concretions is problematic due to the excitation volume caused by operating conditions required to detect minor amounts of Zn in the presence of significant amounts of Na. For this reason, previous researchers have not demonstrated this surprising finding.

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 2011

In this paper we introduce the CSIRO hyper-spectral ionoluminescence system for mapping minerals ... more In this paper we introduce the CSIRO hyper-spectral ionoluminescence system for mapping minerals and fluid inclusion complexes. Both hardware and software aspects of the system are described in detail and illustrated by way of example on two naturally occurring mineral assemblages containing quartz veins, the most common host for fluid inclusion studies. Advantages and disadvantages of the approach are discussed, and in light of these future plans are briefly summarized.

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 2003

It is known that the single-event phenomena (SEP) are the malfunction of micro electronics device... more It is known that the single-event phenomena (SEP) are the malfunction of micro electronics devices caused by the impact of an energetic heavy ion. Improving the tolerance of devices to the SEP requires a better understanding of basic charge collection mechanisms on the timescales of the order of picoseconds. In order to better elucidate these mechanisms, we measure the fast transient current resulting from heavy ion strikes with a fast sampling data collection system and a heavy ion microbeam line at JAERI.

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 2003

Transient ion beam induced current (TIBIC) was used to characterise the quality of the electrodes... more Transient ion beam induced current (TIBIC) was used to characterise the quality of the electrodes of p þ n and n þ p SiC diodes fabricated on epitaxial 6H-SiC using different fabrication procedures. The diodes were irradiated with 15 MeV O 4þ and 12 MeV Ni 3þ microbeams. Non-uniform charge collection was observed for p þ n diodes with sintered Al electrode, thus, indicating that the electrode of such diode has spatially poor characteristics. On the other hand, for diodes with electrode formed using Al re-evaporation over the sintered area, uniform TIBIC charge maps were observed. Hence, the quality of electrodes of SiC p þ n diodes can be improved by using Al re-deposition procedure. As for n þ p diode, the degradation of Al sintered electrode due to hydrofluoride acid (HF) treatment was revealed by the basis of non-uniformity of the charge map. Since such spatial information cannot be measured using standard electrical means such as current-voltage measurement, the TIBIC technique can be very useful in evaluating the spatial quality of device electrodes.

High resolution techniques using scanning proton microprobe (SPM)

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1994

The very high resolution (down to 50 nm) achieved with low beam currents (fA) in a scanning ion m... more The very high resolution (down to 50 nm) achieved with low beam currents (fA) in a scanning ion microprobe have lead to many nondestructive techniques of microanalysis. This paper discusses recent developments and applications in the use of 3-D STIM (scanning transmission ion microscopy) Tomography, channeling STIM and IBIC (ion beam induced charge).

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 2003

We have succeeded in measuring single-event current pulses in silicon-on-insulator (SOI) structur... more We have succeeded in measuring single-event current pulses in silicon-on-insulator (SOI) structures using collimated heavy-ion beams in conjunction with a wide-bandwidth current-pulse measurement system. The total amount of collected charges for ions incident on the p þ n junction indicate collection from below the top silicon layer in the SOI diode. For such high energies, SOI structures were found to be an ineffective means for ensuring the radiation hardness of electronic devices used in space.

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 2003

In order to study the phenomena of single event upset (SEU), investigations of properties of sing... more In order to study the phenomena of single event upset (SEU), investigations of properties of single event transient current (SETC) in micro-scale semiconductor devices are in progress at the JAERI Takasaki heavy ion microbeam single-ion hit system. Irradiation damage effects are noticeable problems in SETC measurement, especially when a device is irradiated continuously by high-energy heavy ions in an area of 1 lm level. On the other hand, confined irradiation damages in such narrow localized area can be a useful landmark to indicate how large area or region of the device to be concerned with charge collection events. This information is very important for designing micro-scale devices with high SEU tolerance. When a micro-scale test device of silicon carbide (SiC) pn diode was irradiated by single 12 MeV nickel ions with a beam spot size of 1 lm in FWHM, successive irradiation damage effects were observed in the form of attenuation of the current pulse heights and the amount of total charge collected. The lateral extent of charge collection induced by every ion injection was evaluated by analyzing these data. The extent of charge collection in depth direction will be also discussed in conjunction with the thickness of the sensitive layer and the range of the projectiles.

Measurement of Transient Current Induced in Silicon Carbide Diodes using single-ion hit technique

Two generations of diamond detectors were fabricated for single ion implantation detection. The f... more Two generations of diamond detectors were fabricated for single ion implantation detection. The first generation detector employed a photolithographically defined Titanium/Gold coplanar interdigitated electrode structure while the second generation detector employed a buried conducting electrode array formed with 2 MeV Boron ion implantation. In this study electronic grade type IIa chemical vapour deposited single crystal diamond was compared with type Ib high pressure high temperature single crystal diamond and charge collection efficiencies were calculated with Ion Beam Induced Current (IBIC) analysis. In this IBIC analysis, a focussed micro-beam of 4 He + with energies ranging from 500 keV to 1.25 MeV was used in order to determine the charge collection efficiency analysis at various depths. Time-resolved IBIC analysis was also carried out to more explicitly investigate the mobility-lifetime product and slow detrapping processes in each crystal.

Observation of Single-event Transient Currents Induced by Neutron Irradiation in Si pin Photodiodes

Development of the measurement system for quasi-monoenergetic neutron beam induced single-event effects

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 2003

The high-speed current transients induced in SiC p-n diodes by 9 MeV Ni 2þ and 12 MeV Ni 3þ were ... more The high-speed current transients induced in SiC p-n diodes by 9 MeV Ni 2þ and 12 MeV Ni 3þ were measured using transient ion beam induced current (TIBIC). The amplitude of the TIBIC signals increases with increasing bias voltage. The transient current fall-time reduces with increasing bias voltage. These results are attributed to the increase in the electric field and the space-charge region with bias. However, the charge collection efficiency is below 100% even if the depletion width is greater than the Ni ion range. This can be attributed to the large nuclear stopping of Ni and recombination of the highly dense electron-hole pairs in the space-charge region. Our result indicates that pulse height defect (PHD) plays a significant role in the charge collection mechanism in these SiC p-n diodes for highly ionizing particles.

American Mineralogist, 2014

Impurities and crystal defects within the semiconducting bulk of a metal sulfide introduce energy... more Impurities and crystal defects within the semiconducting bulk of a metal sulfide introduce energy levels within the forbidden bandgap. These levels in turn control semiconducting type and local electrical properties within single and multi-phased sulfide assemblages. Heterogeneity in sulfide semiconductivity linked to these impurities can lead to p-n micro-junction formation and potential distributions near the surface that may alter redox reactivity. Secondary gold ore genesis via a micro-galvanic effect related to heterogeneity has in the past been hypothetically linked to such micro-junctions. Understanding these regions and their interaction with weathering fluids in the regolith for example requires large-scale imaging of potential distributions associated with near-surface micro-junctions and correlation with the responsible elemental distributions. Here we investigate the existence of micro-electronic junctions in a mixed sulfide assemblage using scanning laser beam induced current (LBIC) and correlate them with pyrite-chalcopyrite interfaces mapped using combined energy-dispersive spectroscopy (EDS) and wavelength-dispersive spectroscopy (WDS) on an electron hyper-probe. Junctions in a natural assemblage are positively identified for the first time.

Magmatic evolution and characteristics of magmatic fluid in the Qiagong porphyry system

A system for ultra-fast transient ion and pulsed laser current microscopies as a function of temperature

ABSTRACT

Materials Science Forum, 2010

Illustration of the experimental configuration for single event transient measurements. The ion m... more Illustration of the experimental configuration for single event transient measurements. The ion microbeam is scanned over the NMOS and the induced transient is recorded at each position.

2007 9th European Conference on Radiation and Its Effects on Components and Systems, 2007

The next generations of Martian rovers are to examine the polar regions where temperatures are ex... more The next generations of Martian rovers are to examine the polar regions where temperatures are extremely low and the absence of an earth-like atmosphere results in a plethora of radiation issues including Analogue Single Event Transients. To this end, a radiation-hardened, temperature compensated CMOS Single-On-Insulator operational amplifier was designed and fabricated using Honeywell's SOI V process. Broad beam heavy-ion tests at the University of Texas A&M were performed to ascertain the duration and severity of any SET's for low and high gain application. Ambiguity regarding the location of transient formation required the use of an ion microbeam to confirm a region of major concern in the internal bias circuitry.

Small, 2012

The incorporation of highly luminescent core-shell quantum dots (QDs) within a metal-organic fram... more The incorporation of highly luminescent core-shell quantum dots (QDs) within a metal-organic framework (MOF) is achieved through a one-pot method. Through appropriate surface functionalization, the QDs are solubilized within MOF-5 growth media. This permits the incorporation of the QDs within the evolving framework during the reaction. The resulting QD@MOF-5 composites are characterized using X-ray fluorescence, cross-sectional confocal microscopy, energy-dispersive X-ray spectroscopy, scanning electron microscopy, and small-angle X-ray scattering. The synergistic combination of luminescent QDs and the controlled porosity of MOF-5 in the QD@MOF-5 composites is harnessed within a prototype molecular sensor that can discriminate on the basis of molecular size. Nanocomposites Luminescent Metal-Organic Doped Quantum Dots 81 www.small-journal.com

Scanning picosecond tunable laser system for simulating MeV heavy ion-induced charge collection events as a function of temperature

Review of Scientific Instruments, 2008

A new methodology for using scanning picosecond laser microscopy to simulate cosmic ray induced r... more A new methodology for using scanning picosecond laser microscopy to simulate cosmic ray induced radiation effects as a function of temperature is described in detail. The built system is centered on diffraction-limited focusing of the output from a broadband (690-960 nm) ultrafast Ti:sapphire Tsunami laser pumped by a 532 nm Millennia laser. An acousto-optic modulator is used to provide pulse picking down to event rates necessary for the technologies and effects under study. The temperature dependence of the charge generation process for ions and photons is briefly reviewed and the need for wavelength tunability is discussed. An appropriate wavelength selection is critical for proper emulation of ion events over a wide temperature range. The system developed is detailed and illustrated by way of example on a deep-submicron complementary metal-oxide semiconductor test structure.

PLoS ONE, 2011

The aim of this study was to determine specific distribution of metals in the termite Tumuliterme... more The aim of this study was to determine specific distribution of metals in the termite Tumulitermes tumuli (Froggatt) and identify specific organs within the termite that host elevated metals and therefore play an important role in the regulation and transfer of these back into the environment. Like other insects, termites bio-accumulate essential metals to reinforce cuticular structures and utilize storage detoxification for other metals including Ca, P, Mg and K. Previously, Mn and Zn have been found concentrated in mandible tips and are associated with increased hardness whereas Ca, P, Mg and K are accumulated in Malpighian tubules. Using high resolution Particle Induced X-Ray Emission (PIXE) mapping of whole termites and Scanning Electron Microscope (SEM) Energy Dispersive X-ray (EDX) spot analysis, localised accumulations of metals in the termite T. tumuli were identified. Tumulitermes tumuli was found to have proportionally high Mn concentrations in mandible tips. Malpighian tubules had significant enrichment of Zn (1.6%), Mg (4.9%), P (6.8%), Ca (2.7%) and K (2.4%). Synchrotron scanning X-ray Fluorescence Microprobe (XFM) mapping demonstrated two different concretion types defined by the mutually exclusive presence of Ca and Zn. In-situ SEM EDX realisation of these concretions is problematic due to the excitation volume caused by operating conditions required to detect minor amounts of Zn in the presence of significant amounts of Na. For this reason, previous researchers have not demonstrated this surprising finding.

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 2011

In this paper we introduce the CSIRO hyper-spectral ionoluminescence system for mapping minerals ... more In this paper we introduce the CSIRO hyper-spectral ionoluminescence system for mapping minerals and fluid inclusion complexes. Both hardware and software aspects of the system are described in detail and illustrated by way of example on two naturally occurring mineral assemblages containing quartz veins, the most common host for fluid inclusion studies. Advantages and disadvantages of the approach are discussed, and in light of these future plans are briefly summarized.

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 2003

It is known that the single-event phenomena (SEP) are the malfunction of micro electronics device... more It is known that the single-event phenomena (SEP) are the malfunction of micro electronics devices caused by the impact of an energetic heavy ion. Improving the tolerance of devices to the SEP requires a better understanding of basic charge collection mechanisms on the timescales of the order of picoseconds. In order to better elucidate these mechanisms, we measure the fast transient current resulting from heavy ion strikes with a fast sampling data collection system and a heavy ion microbeam line at JAERI.

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 2003

Transient ion beam induced current (TIBIC) was used to characterise the quality of the electrodes... more Transient ion beam induced current (TIBIC) was used to characterise the quality of the electrodes of p þ n and n þ p SiC diodes fabricated on epitaxial 6H-SiC using different fabrication procedures. The diodes were irradiated with 15 MeV O 4þ and 12 MeV Ni 3þ microbeams. Non-uniform charge collection was observed for p þ n diodes with sintered Al electrode, thus, indicating that the electrode of such diode has spatially poor characteristics. On the other hand, for diodes with electrode formed using Al re-evaporation over the sintered area, uniform TIBIC charge maps were observed. Hence, the quality of electrodes of SiC p þ n diodes can be improved by using Al re-deposition procedure. As for n þ p diode, the degradation of Al sintered electrode due to hydrofluoride acid (HF) treatment was revealed by the basis of non-uniformity of the charge map. Since such spatial information cannot be measured using standard electrical means such as current-voltage measurement, the TIBIC technique can be very useful in evaluating the spatial quality of device electrodes.

High resolution techniques using scanning proton microprobe (SPM)

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1994

The very high resolution (down to 50 nm) achieved with low beam currents (fA) in a scanning ion m... more The very high resolution (down to 50 nm) achieved with low beam currents (fA) in a scanning ion microprobe have lead to many nondestructive techniques of microanalysis. This paper discusses recent developments and applications in the use of 3-D STIM (scanning transmission ion microscopy) Tomography, channeling STIM and IBIC (ion beam induced charge).

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 2003

We have succeeded in measuring single-event current pulses in silicon-on-insulator (SOI) structur... more We have succeeded in measuring single-event current pulses in silicon-on-insulator (SOI) structures using collimated heavy-ion beams in conjunction with a wide-bandwidth current-pulse measurement system. The total amount of collected charges for ions incident on the p þ n junction indicate collection from below the top silicon layer in the SOI diode. For such high energies, SOI structures were found to be an ineffective means for ensuring the radiation hardness of electronic devices used in space.

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 2003

In order to study the phenomena of single event upset (SEU), investigations of properties of sing... more In order to study the phenomena of single event upset (SEU), investigations of properties of single event transient current (SETC) in micro-scale semiconductor devices are in progress at the JAERI Takasaki heavy ion microbeam single-ion hit system. Irradiation damage effects are noticeable problems in SETC measurement, especially when a device is irradiated continuously by high-energy heavy ions in an area of 1 lm level. On the other hand, confined irradiation damages in such narrow localized area can be a useful landmark to indicate how large area or region of the device to be concerned with charge collection events. This information is very important for designing micro-scale devices with high SEU tolerance. When a micro-scale test device of silicon carbide (SiC) pn diode was irradiated by single 12 MeV nickel ions with a beam spot size of 1 lm in FWHM, successive irradiation damage effects were observed in the form of attenuation of the current pulse heights and the amount of total charge collected. The lateral extent of charge collection induced by every ion injection was evaluated by analyzing these data. The extent of charge collection in depth direction will be also discussed in conjunction with the thickness of the sensitive layer and the range of the projectiles.