Lavy Goldminz - Academia.edu (original) (raw)
Papers by Lavy Goldminz
[Proceedings] 1992 IEEE International Symposium on Circuits and Systems
A new class of current mode amplifiers, designed to operate in a true current-mode environment, i... more A new class of current mode amplifiers, designed to operate in a true current-mode environment, is introduced. They utilize the FCS (floating current source), a novel current-mode building block, in various configurations. Two current-mode differential amplifiers of this type are described. The first one employs two translinear gain stages. The CM (common mode) response is reduced by a negative feedback loop responding to the CM only. The translinear gain can be adjusted by varying the value of two current source pairs in unison. The second is a differential feedback amplifier, employing two independent feedback loops which apply parallel feedback to the input virtual ground, one for the differential and another for the common mode. Its input admittance and output impedance are both increased significantly by the feedback applied.<<ETX>>
IEEE Transactions on Electron Devices, 1992
A new model for the thermal noise in long buriedchannel MOS transistors is presented. The model c... more A new model for the thermal noise in long buriedchannel MOS transistors is presented. The model calculates the dependence of the transistor noise performance, on both device fabrication parameters and the four terminal voltages. The noise calculations are based on the gradual channel approximation, using simple charge-voltage relations. Analytic models are obtained for the different regions of operation of the transistor. Noise measurements are presented and compared with results predicted by the model. NOMENCLATURE Depletion layer capacitance (F/cm2). Oxide capacitance (F/cm2). Frequency (Hz). Channel conductivity (cm U). Small-signal drain conductance (U). Small-signal transconductance (U). Source conductance (U). Drain current (A). Channel length (cm). Boltzmann constant (J/K). Intrinsic concentration (cmP3). Substrate doping (~m-~). Channel doping (~m-~). Electronic charge (C). Surface accumulation charge (C /cm2). Surface depletion charge (C/cm2). Total implanted charge (C /an2). Channel-bulk depletion charge (C /cm2). Free charge in the neutral region (C/cm2). Current noise spectrum (A~/ H Z). Voltage noise spectrum referred to gate Voltage noise at the source (V2/Hz). Channel current noise spectrum (A2/Hz). Oxide thickness (cm). Voltage at a point y along the channel (V). Bulk voltage (V). Drain voltage (V). Drain-source voltage (V). Drain saturation voltage (V). Flat-band voltage (V). Gate voltage (V).
Analog Integrated Circuits and Signal Processing, 1992
A novel building block is described, termed FCS (floating current source), which may serve as cla... more A novel building block is described, termed FCS (floating current source), which may serve as class A output stage for CFAs (current-mode feedback amplifiers). It is capable of driving a grounded load with a bipolar signal, and yields a feedback current equal to the output current over a wide frequency range. Its possible range of application covers MOSFET amplifiers employed in analog signal processing and current-operated control systems. An internal interconnection converts the FCS into a CCII-. Another novel CCII-configuration employs a pushpull folded cascode and may serve as noninverting input stage for a standard amplifier configuration. Finally, a feedback-stabilized CCII-and a CFA are described, both employing the FCS as output stage.
Optical Engineering, 1993
ABSTRACT Mercury-cadmium-telluride (HgCdTe) infrared focal-plane arrays (IRFPAs) based on photodi... more ABSTRACT Mercury-cadmium-telluride (HgCdTe) infrared focal-plane arrays (IRFPAs) based on photodiodes and photoconductors are compared. The comparison includes readout structures for both types of detectors, analysis of the SNR of the various configurations, and the noise requirements of the coupling devices. The feasibility of IRFPAs based on linear arrays of photoconductors is discussed, and the significance of such a novel IRFPA is presented.
[Proceedings] 1992 IEEE International Symposium on Circuits and Systems
A new class of current mode amplifiers, designed to operate in a true current-mode environment, i... more A new class of current mode amplifiers, designed to operate in a true current-mode environment, is introduced. They utilize the FCS (floating current source), a novel current-mode building block, in various configurations. Two current-mode differential amplifiers of this type are described. The first one employs two translinear gain stages. The CM (common mode) response is reduced by a negative feedback loop responding to the CM only. The translinear gain can be adjusted by varying the value of two current source pairs in unison. The second is a differential feedback amplifier, employing two independent feedback loops which apply parallel feedback to the input virtual ground, one for the differential and another for the common mode. Its input admittance and output impedance are both increased significantly by the feedback applied.<<ETX>>
IEEE Transactions on Electron Devices, 1992
A new model for the thermal noise in long buriedchannel MOS transistors is presented. The model c... more A new model for the thermal noise in long buriedchannel MOS transistors is presented. The model calculates the dependence of the transistor noise performance, on both device fabrication parameters and the four terminal voltages. The noise calculations are based on the gradual channel approximation, using simple charge-voltage relations. Analytic models are obtained for the different regions of operation of the transistor. Noise measurements are presented and compared with results predicted by the model. NOMENCLATURE Depletion layer capacitance (F/cm2). Oxide capacitance (F/cm2). Frequency (Hz). Channel conductivity (cm U). Small-signal drain conductance (U). Small-signal transconductance (U). Source conductance (U). Drain current (A). Channel length (cm). Boltzmann constant (J/K). Intrinsic concentration (cmP3). Substrate doping (~m-~). Channel doping (~m-~). Electronic charge (C). Surface accumulation charge (C /cm2). Surface depletion charge (C/cm2). Total implanted charge (C /an2). Channel-bulk depletion charge (C /cm2). Free charge in the neutral region (C/cm2). Current noise spectrum (A~/ H Z). Voltage noise spectrum referred to gate Voltage noise at the source (V2/Hz). Channel current noise spectrum (A2/Hz). Oxide thickness (cm). Voltage at a point y along the channel (V). Bulk voltage (V). Drain voltage (V). Drain-source voltage (V). Drain saturation voltage (V). Flat-band voltage (V). Gate voltage (V).
Analog Integrated Circuits and Signal Processing, 1992
A novel building block is described, termed FCS (floating current source), which may serve as cla... more A novel building block is described, termed FCS (floating current source), which may serve as class A output stage for CFAs (current-mode feedback amplifiers). It is capable of driving a grounded load with a bipolar signal, and yields a feedback current equal to the output current over a wide frequency range. Its possible range of application covers MOSFET amplifiers employed in analog signal processing and current-operated control systems. An internal interconnection converts the FCS into a CCII-. Another novel CCII-configuration employs a pushpull folded cascode and may serve as noninverting input stage for a standard amplifier configuration. Finally, a feedback-stabilized CCII-and a CFA are described, both employing the FCS as output stage.
Optical Engineering, 1993
ABSTRACT Mercury-cadmium-telluride (HgCdTe) infrared focal-plane arrays (IRFPAs) based on photodi... more ABSTRACT Mercury-cadmium-telluride (HgCdTe) infrared focal-plane arrays (IRFPAs) based on photodiodes and photoconductors are compared. The comparison includes readout structures for both types of detectors, analysis of the SNR of the various configurations, and the noise requirements of the coupling devices. The feasibility of IRFPAs based on linear arrays of photoconductors is discussed, and the significance of such a novel IRFPA is presented.