MAKSIM TELENKOV - Academia.edu (original) (raw)

Papers by MAKSIM TELENKOV

Critical Reviews in Solid State and Materials Sciences, 2016

Bismuth alloying with GaAs has promised greater advantages in the realization of more convenient ... more Bismuth alloying with GaAs has promised greater advantages in the realization of more convenient mid and near IR photonic devices owing to its novel and unique properties. The coexistence of faster band gap reduction and a strong increase in spin-orbit splitting energy with an increase in Bi concentration is one of those. However, the realization of practical devices is hindered due to several critical issues associated with the electronic properties of this material. Many of these limitations primarily arise due the difficulty obtaining high-quality structures. In this article, we review the growth and properties of GaAs (1¡x) Bi x. We have provided a comprehensive study of the properties by considering both from a fundamental perspective and also on their potential device applications.

2014 39th International Conference on Infrared, Millimeter, and Terahertz waves (IRMMW-THz), 2014

A mechanism of frequency tunable terahertz emission based on inter-Landau level transition in cas... more A mechanism of frequency tunable terahertz emission based on inter-Landau level transition in cascade quantum well structures under a condition of sequential resonant tunneling was proposed and theoretically proved.

Nanoscale Research Letters, 2012

The tunable terahertz intersubband Landau level transitions in resonant tunneling cascade quantum... more The tunable terahertz intersubband Landau level transitions in resonant tunneling cascade quantum well structures are considered. The way of lifting the selection rule forbidding the inter-Landau level terahertz transitions of interest by applying a magnetic field tilted with respect to the structure layers is proposed. The importance of asymmetric structure design to achieve considerable values of transition dipole matrix elements is demonstrated.

Surfaces and Interfaces, 2021

Abstract Herein we report on the spin coated thin films of Zn-doped TiO2 on glass substrates with... more Abstract Herein we report on the spin coated thin films of Zn-doped TiO2 on glass substrates with various Zn concentrations (2 ‒8 at %). The structural, chemical, optical and morphological properties were investigated using X-ray diffraction (XRD), Raman spectroscopy, photoluminescence (PL), UV-Visible spectroscopy, X-ray Photoelectron Spectroscopy (XPS) and Field Emission Scanning Electron Microscopy (FESEM). Studies by XRD and Raman confirmed the existence of the anatase phase. With increasing Zn2+ concentration, the crystallite size was found to decrease. FESEM studies reveal the homogenous distribution of grains in the films. UV-Visible spectra showed higher light absorption with doping, and the bandgap decreased from 3.47 eV to 3.36 eV. The Urbach energy was found to increase on doping. XPS spectra revealed the successful incorporation of Zn2+ ion into TiO2 lattice.

Critical Reviews in Solid State and Materials Sciences, 2016

Bismuth alloying with GaAs has promised greater advantages in the realization of more convenient ... more Bismuth alloying with GaAs has promised greater advantages in the realization of more convenient mid and near IR photonic devices owing to its novel and unique properties. The coexistence of faster band gap reduction and a strong increase in spin-orbit splitting energy with an increase in Bi concentration is one of those. However, the realization of practical devices is hindered due to several critical issues associated with the electronic properties of this material. Many of these limitations primarily arise due the difficulty obtaining high-quality structures. In this article, we review the growth and properties of GaAs (1¡x) Bi x. We have provided a comprehensive study of the properties by considering both from a fundamental perspective and also on their potential device applications.

2014 39th International Conference on Infrared, Millimeter, and Terahertz waves (IRMMW-THz), 2014

A mechanism of frequency tunable terahertz emission based on inter-Landau level transition in cas... more A mechanism of frequency tunable terahertz emission based on inter-Landau level transition in cascade quantum well structures under a condition of sequential resonant tunneling was proposed and theoretically proved.

Nanoscale Research Letters, 2012

The tunable terahertz intersubband Landau level transitions in resonant tunneling cascade quantum... more The tunable terahertz intersubband Landau level transitions in resonant tunneling cascade quantum well structures are considered. The way of lifting the selection rule forbidding the inter-Landau level terahertz transitions of interest by applying a magnetic field tilted with respect to the structure layers is proposed. The importance of asymmetric structure design to achieve considerable values of transition dipole matrix elements is demonstrated.

Surfaces and Interfaces, 2021

Abstract Herein we report on the spin coated thin films of Zn-doped TiO2 on glass substrates with... more Abstract Herein we report on the spin coated thin films of Zn-doped TiO2 on glass substrates with various Zn concentrations (2 ‒8 at %). The structural, chemical, optical and morphological properties were investigated using X-ray diffraction (XRD), Raman spectroscopy, photoluminescence (PL), UV-Visible spectroscopy, X-ray Photoelectron Spectroscopy (XPS) and Field Emission Scanning Electron Microscopy (FESEM). Studies by XRD and Raman confirmed the existence of the anatase phase. With increasing Zn2+ concentration, the crystallite size was found to decrease. FESEM studies reveal the homogenous distribution of grains in the films. UV-Visible spectra showed higher light absorption with doping, and the bandgap decreased from 3.47 eV to 3.36 eV. The Urbach energy was found to increase on doping. XPS spectra revealed the successful incorporation of Zn2+ ion into TiO2 lattice.