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Papers by M. Gustafsson
Physical Review B, 2000
A very strong exchange of oxygen between alpha-quartz (16O) and annealing atmosphere (18O) observ... more A very strong exchange of oxygen between alpha-quartz (16O) and annealing atmosphere (18O) observed during solid-phase epitaxial growth of Li+- and Cs+-ion-beam-amorphized single-crystal alpha-quartz is reported. Epitaxial regrowth was observed in Li-irradiated samples after 700 °C annealing and in Cs-irradiated samples after 870 °C annealing, by means of Rutherford backscattering spectrometry in channeling geometry. The 18O/16O exchange and the outdiffusion of Li were investigated by the use of time-of-flight elastic recoil detection analysis. Our experiments show that alkali-ion implantation strongly enhances the exchange of 16O in SiO2 with 18O of the annealing atmosphere. The exchange accompanies the loss of alkali atoms, thus favoring the recrystallization of the lattice. Mechanisms of epitaxial regrowth in Li- and Cs-implanted alpha-quartz are discussed.
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1999
Modi®cations of a-SiO 2 ®lms and Ni/a-SiO 2 bilayers by irradiations with 90±350 keV Xe ions have... more Modi®cations of a-SiO 2 ®lms and Ni/a-SiO 2 bilayers by irradiations with 90±350 keV Xe ions have been investigated. The eects of subsequent thermal annealings in vacuum at 298±1173 K have also been studied. The analyses were performed by means of Rutherford Backscattering Spectrometry and surface pro®lometry. We here report on the results of ion-beam induced surface roughening and sputtering and of the noble-gas collection curves. As to the athermal ion-beam mixing at the Ni/a-SiO 2 interface, a low mixing rate in agreement with the ballistic model was observed. Only little Xe precipitation, which would indicate the presence of end-of-range spikes, occurs at the interface. Most eects were found to strongly depend on the implanted ion¯uence. Ó
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1999
Modi®cations of Ni/SiO 2 bilayers by irradiations with 100±150 keV Ne ions or 180 keV 40 Ar ions ... more Modi®cations of Ni/SiO 2 bilayers by irradiations with 100±150 keV Ne ions or 180 keV 40 Ar ions up to¯uences of 5´10 17 /cm 2 and subsequent thermal annealings in vacuum have been investigated. The concentration pro®les of the ®lm components and implanted ions have been measured by means of Rutherford Backscattering Spectrometry and Timeof-Flight Elastic Recoil Detection Analysis (TOF-ERDA). We report on the results concerning surface sputtering and noble-gas collection during implantation at 77 K and migration of the implants during thermal annealing. Very little Ne precipitation at the Ni/SiO 2 interface has been found over the full¯uence range, while Ar precipitates occur at¯uences exceeding 10 17 ions/cm 2 . During annealings up to 675 K, the implanted Ne content retained in the Ni ®lm remains constant, but strongly decreases in the SiO 2 ®lm. Ó 0168-583X/98/$ ± see front matter Ó 1999 Elsevier Science B.V. All rights reserved. PII: S 0 1 6 8 -5 8 3 X ( 9 8 ) 0 0 6 8 2 -X
Physical Review B, 2000
A very strong exchange of oxygen between alpha-quartz (16O) and annealing atmosphere (18O) observ... more A very strong exchange of oxygen between alpha-quartz (16O) and annealing atmosphere (18O) observed during solid-phase epitaxial growth of Li+- and Cs+-ion-beam-amorphized single-crystal alpha-quartz is reported. Epitaxial regrowth was observed in Li-irradiated samples after 700 °C annealing and in Cs-irradiated samples after 870 °C annealing, by means of Rutherford backscattering spectrometry in channeling geometry. The 18O/16O exchange and the outdiffusion of Li were investigated by the use of time-of-flight elastic recoil detection analysis. Our experiments show that alkali-ion implantation strongly enhances the exchange of 16O in SiO2 with 18O of the annealing atmosphere. The exchange accompanies the loss of alkali atoms, thus favoring the recrystallization of the lattice. Mechanisms of epitaxial regrowth in Li- and Cs-implanted alpha-quartz are discussed.
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1999
Modi®cations of a-SiO 2 ®lms and Ni/a-SiO 2 bilayers by irradiations with 90±350 keV Xe ions have... more Modi®cations of a-SiO 2 ®lms and Ni/a-SiO 2 bilayers by irradiations with 90±350 keV Xe ions have been investigated. The eects of subsequent thermal annealings in vacuum at 298±1173 K have also been studied. The analyses were performed by means of Rutherford Backscattering Spectrometry and surface pro®lometry. We here report on the results of ion-beam induced surface roughening and sputtering and of the noble-gas collection curves. As to the athermal ion-beam mixing at the Ni/a-SiO 2 interface, a low mixing rate in agreement with the ballistic model was observed. Only little Xe precipitation, which would indicate the presence of end-of-range spikes, occurs at the interface. Most eects were found to strongly depend on the implanted ion¯uence. Ó
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1999
Modi®cations of Ni/SiO 2 bilayers by irradiations with 100±150 keV Ne ions or 180 keV 40 Ar ions ... more Modi®cations of Ni/SiO 2 bilayers by irradiations with 100±150 keV Ne ions or 180 keV 40 Ar ions up to¯uences of 5´10 17 /cm 2 and subsequent thermal annealings in vacuum have been investigated. The concentration pro®les of the ®lm components and implanted ions have been measured by means of Rutherford Backscattering Spectrometry and Timeof-Flight Elastic Recoil Detection Analysis (TOF-ERDA). We report on the results concerning surface sputtering and noble-gas collection during implantation at 77 K and migration of the implants during thermal annealing. Very little Ne precipitation at the Ni/SiO 2 interface has been found over the full¯uence range, while Ar precipitates occur at¯uences exceeding 10 17 ions/cm 2 . During annealings up to 675 K, the implanted Ne content retained in the Ni ®lm remains constant, but strongly decreases in the SiO 2 ®lm. Ó 0168-583X/98/$ ± see front matter Ó 1999 Elsevier Science B.V. All rights reserved. PII: S 0 1 6 8 -5 8 3 X ( 9 8 ) 0 0 6 8 2 -X