M. Levinshtein - Academia.edu (original) (raw)
Papers by M. Levinshtein
Журнал технической физики, 2017
Рассмотрено влияние неодномерных эффектов, обусловленных растеканием тока управления в базовом сл... more Рассмотрено влияние неодномерных эффектов, обусловленных растеканием тока управления в базовом слое, на величину отпирающего тока управления тиристоров на основе 4H-SiC. Показано, что реализующийся в 4H-SiC тиристорах новый механизм переключения приводит к зависимости отпирающего тока управления от параметров тиристора, качественно отличающейся от соответствующей зависимости в традиционных кремниевых тиристорах. DOI: 10.21883/FTP.2017.02.44111.8335
Fizika i tehnika poluprovodnikov, 2017
Рассмотрено влияние неодномерных эффектов, обусловленных растеканием тока управления в базовом сл... more Рассмотрено влияние неодномерных эффектов, обусловленных растеканием тока управления в базовом слое, на величину отпирающего тока управления тиристоров на основе 4H-SiC. Показано, что реализующийся в 4H-SiC тиристорах новый механизм переключения приводит к зависимости отпирающего тока управления от параметров тиристора, качественно отличающейся от соответствующей зависимости в традиционных кремниевых тиристорах.
1/f noise in 6H-SiC
Technical Physics Letters - TECH PHYS LETT, 1993
Zhurnal Experimental'noy i Theoreticheskoy Physiki, 1975
A new approach to the description of the conductivity and Hall effect in disordered systems, base... more A new approach to the description of the conductivity and Hall effect in disordered systems, based application of a scaling hypothesis analogous to the scaling hypothesis in the theory of phase transitions proposed. In the framework of this approach, laws describing the variation of the conductivity and constant of two-dimensional and three-dimensional systems composed of randomly located conducting nonconducting elements near the percolation threshold are established. For the conductivity the predicted dependences agree well with the experimental data obtained previously. The Hall effect in disordered and three-dimensional systems is simulated for the first time by means of measurements on electrically conducting paper with randomly punched holes. The results of this experiment are also in agreement the predictions of the theory.
Switching characteristics of a laser-stimulated semiconductor switch
Soviet physics. Technical physics, May 1, 1979
Possibility of accelerating the switching process of quick-response thyristors
Multichannel semiconductor nanosecond switch for excitation of copper vapor by a transverse discharge
Soviet Journal of Quantum Electronics, 1981
A high-power semiconductor nanosecond switch, in the form of a thyristor structure activated by a... more A high-power semiconductor nanosecond switch, in the form of a thyristor structure activated by a laser pulse, was investigated. This switch could handle currents up to approx.5 x 10 kA under voltages of > or approx. =5 kV in a time of approx.1 nsec. The principle of its operation ensured synchronous of triggering of several switches with an accuracy of
On the Lower Frequency Noise Mechanisms in GaN/AlGaN HFETs
GALLIUM ARSENIDE (GaAs)
Handbook Series on Semiconductor Parameters, 1996
The Princess and the Pea (Impurity Semiconductors)
Annealing High-Voltage 4H-SiC Schottky Diodes Irradiated with Electrons at a High Temperature
Semiconductors
Applied Physics Letters, 2017
A one-dimensional analytic model describing the motion of minority carriers against the electric ... more A one-dimensional analytic model describing the motion of minority carriers against the electric field direction under the conditions of high injection level is developed. The results of the model can also be used to estimate the motion of carriers against the field in the case of an arbitrary injection level. The model makes it possible to describe, in good agreement with the results of computer simulation, the modulation of the collector layer resistance in a high voltage SiC bipolar transistor.
SiC based electronics
Uspekhi Fizicheskih Nauk, 2018
Materials Science Forum, 2017
The resistance of the BJT collector layer can be sharply reduced by the effective injection of mi... more The resistance of the BJT collector layer can be sharply reduced by the effective injection of minority carriers (holes) from base to collector. As a result, the voltage drop across the BJT becomes substantially lower. The conditions under which this process can occur are the short rise time and the high amplitude of the base pulse.
Journal of Applied Physics, 2008
Noise in nanostructures is one of the key problems impeding their applications in electronic devi... more Noise in nanostructures is one of the key problems impeding their applications in electronic devices. We show that the level of 1 / f and recombination-generation noise in GaN nanowire field effect transistors can be suppressed by ultraviolet radiation by up to an order of magnitude. This strong suppression of the noise is explained by the illumination changing the occupancy of traps responsible for noise.
Effect of Irradiation with 15-MeV Protons on Low Frequency Noise in Power SiC MOSFETs
Semiconductors
Low frequency noise is studied in 4H-SiC power metal-oxide-semiconductor field-effect transistors... more Low frequency noise is studied in 4H-SiC power metal-oxide-semiconductor field-effect transistors (MOSFETs) irradiated with 15-MeV protons. Irradiation is carried out at room temperature in the frequency range from 1 Hz to 50 kHz upon irradiation with doses Φ of 1012 to 6 × 1013 cm–2. The frequency dependence of the spectral noise density SI follows the law SI ∝ 1/f with good accuracy. A correlation between the saturation current of the output characteristic Id(Vd) and the low-frequency noise level is traced. At doses in the range 1012 cm–2 ≤ Φ ≤ 6 × 1013 cm–2, the saturation current varies within about 20%, whereas the noise level changes by two orders of magnitude. The results of noise spectroscopy are used to estimate the trap density in the gate oxide, Ntv. In unirradiated structures, Ntv ≈ 5.4 × 1018 cm–3 eV–1. At Φ = 6 × 1013 cm–2, Ntv increases to ~7.2 × 1019 cm–3 eV–1.
Impact of High-Energy Electron Irradiation on Surge Currents in 4H-SiC JBS Schottky Diodes
Semiconductors
The effect of irradiation with high-energy (0.9 MeV) electrons on surge currents in high-voltage ... more The effect of irradiation with high-energy (0.9 MeV) electrons on surge currents in high-voltage (operating voltage 1700 V) 4H -SiC Schottky p-n diodes is studied in the microsecond range of the forward-current pulse duration. With increasing irradiation dose Φ, the hole injection threshold steadily grows, and the base-modulation level by minority carriers (holes) becomes lower. At Φ = 1.5 × 1016 cm–2, no hole injection is observed up to forward voltages of ~30 V and forward current densities of j ≈ 9000 A/cm2.
Current–voltage characteristics of Schottky diodes at high current densities under the injection of minority carriers
Semiconductors
An analytical expression is derived for the current–voltage characteristic of a Schottky diode at... more An analytical expression is derived for the current–voltage characteristic of a Schottky diode at a high injection level of minority carriers. It is shown that, even at very high current densities, the higher the base doping level, the larger the voltage drop across the diode. The physical mechanism responsible for this “paradoxical” result is analyzed. The validity of the analytical result is confirmed by a numerical calculation with software that takes into account the whole set of nonlinear effects caused by a high injection level in the base layer and by heavy doping of the emitter region.
Semiconductors
The transient switch-off of a bipolar 4H-SiC transistor from the deep-saturation mode is studied ... more The transient switch-off of a bipolar 4H-SiC transistor from the deep-saturation mode is studied by performing 1D numerical simulation. Switch-off in the zero base current mode and in the mode of switching-off with a negative base current is examined. It is shown that at quite real values of the switching-off base current, the switch-off time can be made ~40 times shorter than the switch-off time at zero base current. The delay time can also be made substantially (several times) shorter. It is noted that, in the deep saturation mode in which the conductivity of the collector layer is highly modulated by minority carriers, the bipolar transistor can operate in the continuous mode at a rather high current density.
Noise in devices and circuits II–Proceedings of SPIE Vol. 5470
Журнал технической физики, 2017
Рассмотрено влияние неодномерных эффектов, обусловленных растеканием тока управления в базовом сл... more Рассмотрено влияние неодномерных эффектов, обусловленных растеканием тока управления в базовом слое, на величину отпирающего тока управления тиристоров на основе 4H-SiC. Показано, что реализующийся в 4H-SiC тиристорах новый механизм переключения приводит к зависимости отпирающего тока управления от параметров тиристора, качественно отличающейся от соответствующей зависимости в традиционных кремниевых тиристорах. DOI: 10.21883/FTP.2017.02.44111.8335
Fizika i tehnika poluprovodnikov, 2017
Рассмотрено влияние неодномерных эффектов, обусловленных растеканием тока управления в базовом сл... more Рассмотрено влияние неодномерных эффектов, обусловленных растеканием тока управления в базовом слое, на величину отпирающего тока управления тиристоров на основе 4H-SiC. Показано, что реализующийся в 4H-SiC тиристорах новый механизм переключения приводит к зависимости отпирающего тока управления от параметров тиристора, качественно отличающейся от соответствующей зависимости в традиционных кремниевых тиристорах.
1/f noise in 6H-SiC
Technical Physics Letters - TECH PHYS LETT, 1993
Zhurnal Experimental'noy i Theoreticheskoy Physiki, 1975
A new approach to the description of the conductivity and Hall effect in disordered systems, base... more A new approach to the description of the conductivity and Hall effect in disordered systems, based application of a scaling hypothesis analogous to the scaling hypothesis in the theory of phase transitions proposed. In the framework of this approach, laws describing the variation of the conductivity and constant of two-dimensional and three-dimensional systems composed of randomly located conducting nonconducting elements near the percolation threshold are established. For the conductivity the predicted dependences agree well with the experimental data obtained previously. The Hall effect in disordered and three-dimensional systems is simulated for the first time by means of measurements on electrically conducting paper with randomly punched holes. The results of this experiment are also in agreement the predictions of the theory.
Switching characteristics of a laser-stimulated semiconductor switch
Soviet physics. Technical physics, May 1, 1979
Possibility of accelerating the switching process of quick-response thyristors
Multichannel semiconductor nanosecond switch for excitation of copper vapor by a transverse discharge
Soviet Journal of Quantum Electronics, 1981
A high-power semiconductor nanosecond switch, in the form of a thyristor structure activated by a... more A high-power semiconductor nanosecond switch, in the form of a thyristor structure activated by a laser pulse, was investigated. This switch could handle currents up to approx.5 x 10 kA under voltages of > or approx. =5 kV in a time of approx.1 nsec. The principle of its operation ensured synchronous of triggering of several switches with an accuracy of
On the Lower Frequency Noise Mechanisms in GaN/AlGaN HFETs
GALLIUM ARSENIDE (GaAs)
Handbook Series on Semiconductor Parameters, 1996
The Princess and the Pea (Impurity Semiconductors)
Annealing High-Voltage 4H-SiC Schottky Diodes Irradiated with Electrons at a High Temperature
Semiconductors
Applied Physics Letters, 2017
A one-dimensional analytic model describing the motion of minority carriers against the electric ... more A one-dimensional analytic model describing the motion of minority carriers against the electric field direction under the conditions of high injection level is developed. The results of the model can also be used to estimate the motion of carriers against the field in the case of an arbitrary injection level. The model makes it possible to describe, in good agreement with the results of computer simulation, the modulation of the collector layer resistance in a high voltage SiC bipolar transistor.
SiC based electronics
Uspekhi Fizicheskih Nauk, 2018
Materials Science Forum, 2017
The resistance of the BJT collector layer can be sharply reduced by the effective injection of mi... more The resistance of the BJT collector layer can be sharply reduced by the effective injection of minority carriers (holes) from base to collector. As a result, the voltage drop across the BJT becomes substantially lower. The conditions under which this process can occur are the short rise time and the high amplitude of the base pulse.
Journal of Applied Physics, 2008
Noise in nanostructures is one of the key problems impeding their applications in electronic devi... more Noise in nanostructures is one of the key problems impeding their applications in electronic devices. We show that the level of 1 / f and recombination-generation noise in GaN nanowire field effect transistors can be suppressed by ultraviolet radiation by up to an order of magnitude. This strong suppression of the noise is explained by the illumination changing the occupancy of traps responsible for noise.
Effect of Irradiation with 15-MeV Protons on Low Frequency Noise in Power SiC MOSFETs
Semiconductors
Low frequency noise is studied in 4H-SiC power metal-oxide-semiconductor field-effect transistors... more Low frequency noise is studied in 4H-SiC power metal-oxide-semiconductor field-effect transistors (MOSFETs) irradiated with 15-MeV protons. Irradiation is carried out at room temperature in the frequency range from 1 Hz to 50 kHz upon irradiation with doses Φ of 1012 to 6 × 1013 cm–2. The frequency dependence of the spectral noise density SI follows the law SI ∝ 1/f with good accuracy. A correlation between the saturation current of the output characteristic Id(Vd) and the low-frequency noise level is traced. At doses in the range 1012 cm–2 ≤ Φ ≤ 6 × 1013 cm–2, the saturation current varies within about 20%, whereas the noise level changes by two orders of magnitude. The results of noise spectroscopy are used to estimate the trap density in the gate oxide, Ntv. In unirradiated structures, Ntv ≈ 5.4 × 1018 cm–3 eV–1. At Φ = 6 × 1013 cm–2, Ntv increases to ~7.2 × 1019 cm–3 eV–1.
Impact of High-Energy Electron Irradiation on Surge Currents in 4H-SiC JBS Schottky Diodes
Semiconductors
The effect of irradiation with high-energy (0.9 MeV) electrons on surge currents in high-voltage ... more The effect of irradiation with high-energy (0.9 MeV) electrons on surge currents in high-voltage (operating voltage 1700 V) 4H -SiC Schottky p-n diodes is studied in the microsecond range of the forward-current pulse duration. With increasing irradiation dose Φ, the hole injection threshold steadily grows, and the base-modulation level by minority carriers (holes) becomes lower. At Φ = 1.5 × 1016 cm–2, no hole injection is observed up to forward voltages of ~30 V and forward current densities of j ≈ 9000 A/cm2.
Current–voltage characteristics of Schottky diodes at high current densities under the injection of minority carriers
Semiconductors
An analytical expression is derived for the current–voltage characteristic of a Schottky diode at... more An analytical expression is derived for the current–voltage characteristic of a Schottky diode at a high injection level of minority carriers. It is shown that, even at very high current densities, the higher the base doping level, the larger the voltage drop across the diode. The physical mechanism responsible for this “paradoxical” result is analyzed. The validity of the analytical result is confirmed by a numerical calculation with software that takes into account the whole set of nonlinear effects caused by a high injection level in the base layer and by heavy doping of the emitter region.
Semiconductors
The transient switch-off of a bipolar 4H-SiC transistor from the deep-saturation mode is studied ... more The transient switch-off of a bipolar 4H-SiC transistor from the deep-saturation mode is studied by performing 1D numerical simulation. Switch-off in the zero base current mode and in the mode of switching-off with a negative base current is examined. It is shown that at quite real values of the switching-off base current, the switch-off time can be made ~40 times shorter than the switch-off time at zero base current. The delay time can also be made substantially (several times) shorter. It is noted that, in the deep saturation mode in which the conductivity of the collector layer is highly modulated by minority carriers, the bipolar transistor can operate in the continuous mode at a rather high current density.
Noise in devices and circuits II–Proceedings of SPIE Vol. 5470