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Papers by MOHAMED JAMAL
The user has requested enhancement of the downloaded file. All in-text references underlined in b... more The user has requested enhancement of the downloaded file. All in-text references underlined in blue are added to the original document and are linked to publications on ResearchGate, letting you access and read them immediately. Abstract This work investigates the conduction band structure of silicon nanowires, its dependence with the wire width and its influences on the electrical performances of Si nanowire-based MOSFET's working in the ballistic regime. The energy dispersions relations for Si nano-wires have been calculated using a sp 3 tight-binding model and the ballistic response of n-channel devices with a 3D Poisson–Schrö dinger solver considering a mode-space approach and open boundary conditions (NEGF formalism). Results are compared with data obtained considering the parabolic bulk effective mass approximation, highlighting in this last case the overestimation of the I on current, up to 60% for the smallest (1.36 nm · 1.36 nm Si wire) devices.
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An atomistic full-band quantum transport simulator has been developed to study threedimensional S... more An atomistic full-band quantum transport simulator has been developed to study threedimensional
Si nanowire field-effect transistors (FETs) in the presence of electron-phonon scattering.
The Non-equilibrium Green’s Function (NEGF) formalism is solved in a nearest-neighbor
sp3d5s∗ tight-binding basis. The scattering self-energies are derived in the self-consistent Born
approximation to inelastically couple the full electron and phonon energy spectra. The band dispersion
and the eigenmodes of the confined phonons are calculated using a dynamical matrix that
includes the bond and the angle deformations of the nanowires. The optimization of the numerical
algorithms and the parallelization of the NEGF scheme enable the investigation of nanowire
structures with diameters up to 3 nm and lengths over 40 nm. It is found that the reduction of the
device drain current, caused by electron-phonon scattering, is more important in the ON-state than
in the OFF-state of the transistor. Ballistic transport simulations considerably overestimate the
device ON-currents by artificially increasing the charge injection mechanism at the source contact.
1
The user has requested enhancement of the downloaded file. All in-text references underlined in b... more The user has requested enhancement of the downloaded file. All in-text references underlined in blue are added to the original document and are linked to publications on ResearchGate, letting you access and read them immediately. Abstract This work investigates the conduction band structure of silicon nanowires, its dependence with the wire width and its influences on the electrical performances of Si nanowire-based MOSFET's working in the ballistic regime. The energy dispersions relations for Si nano-wires have been calculated using a sp 3 tight-binding model and the ballistic response of n-channel devices with a 3D Poisson–Schrö dinger solver considering a mode-space approach and open boundary conditions (NEGF formalism). Results are compared with data obtained considering the parabolic bulk effective mass approximation, highlighting in this last case the overestimation of the I on current, up to 60% for the smallest (1.36 nm · 1.36 nm Si wire) devices.
An atomistic full-band quantum transport simulator has been developed to study threedimensional S... more An atomistic full-band quantum transport simulator has been developed to study threedimensional
Si nanowire field-effect transistors (FETs) in the presence of electron-phonon scattering.
The Non-equilibrium Green’s Function (NEGF) formalism is solved in a nearest-neighbor
sp3d5s∗ tight-binding basis. The scattering self-energies are derived in the self-consistent Born
approximation to inelastically couple the full electron and phonon energy spectra. The band dispersion
and the eigenmodes of the confined phonons are calculated using a dynamical matrix that
includes the bond and the angle deformations of the nanowires. The optimization of the numerical
algorithms and the parallelization of the NEGF scheme enable the investigation of nanowire
structures with diameters up to 3 nm and lengths over 40 nm. It is found that the reduction of the
device drain current, caused by electron-phonon scattering, is more important in the ON-state than
in the OFF-state of the transistor. Ballistic transport simulations considerably overestimate the
device ON-currents by artificially increasing the charge injection mechanism at the source contact.
1