Mahmood Heidary - Academia.edu (original) (raw)

Mahmood Heidary

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Papers by Mahmood Heidary

Research paper thumbnail of анализ качества посадки кристаллов мощных кремниевых mosfet транзисторов тепловыми методами

Research paper thumbnail of The effects of Progressive Muscle Relaxation and Guided Imagery on gestational hypertension

Research paper thumbnail of ДИАГНОСТИКА ТЕХНОЛОГИЧЕСКИХ ХАРАКТЕРИСТИК МОЩНЫХ ТРАНЗИСТОРОВ С ПОМОЩЬЮ РЕЛАКСАЦИОННОГО ИМПЕДАНС–СПЕКТРОМЕТРА ТЕПЛОВЫХ ПРОЦЕССОВ

The efficient method of determining thermal parameters in high-power field-effect transistors has... more The efficient method of determining thermal parameters in high-power field-effect transistors has been developed and tested based on a study of transient processes during self heating by direct current. With the developed relaxation spectrometer of thermal processes differential distribution profiles of thermal resistance of KP723G transistors have been investigated which were selected in accordance with the regimes of setting of their crystals. Thermal resistance spectra have been obtained from the analysis of time−dependent dynamic thermal impedance using a new non−destructive method of differential spectroscopy using higher order derivatives (order 3). We present both continuous (integral) and discrete spectra of the distribution of internal thermal resistance in the transistors and the value of the junction/case thermal resistance. Thermal characteristics of the KP723G transistors and their imported counterparts IRLZ44 and IRLB3036 have been determined. The method of determining...

Research paper thumbnail of анализ качества посадки кристаллов мощных кремниевых mosfet транзисторов тепловыми методами

Research paper thumbnail of The effects of Progressive Muscle Relaxation and Guided Imagery on gestational hypertension

Research paper thumbnail of ДИАГНОСТИКА ТЕХНОЛОГИЧЕСКИХ ХАРАКТЕРИСТИК МОЩНЫХ ТРАНЗИСТОРОВ С ПОМОЩЬЮ РЕЛАКСАЦИОННОГО ИМПЕДАНС–СПЕКТРОМЕТРА ТЕПЛОВЫХ ПРОЦЕССОВ

The efficient method of determining thermal parameters in high-power field-effect transistors has... more The efficient method of determining thermal parameters in high-power field-effect transistors has been developed and tested based on a study of transient processes during self heating by direct current. With the developed relaxation spectrometer of thermal processes differential distribution profiles of thermal resistance of KP723G transistors have been investigated which were selected in accordance with the regimes of setting of their crystals. Thermal resistance spectra have been obtained from the analysis of time−dependent dynamic thermal impedance using a new non−destructive method of differential spectroscopy using higher order derivatives (order 3). We present both continuous (integral) and discrete spectra of the distribution of internal thermal resistance in the transistors and the value of the junction/case thermal resistance. Thermal characteristics of the KP723G transistors and their imported counterparts IRLZ44 and IRLB3036 have been determined. The method of determining...

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