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Papers by Manauti Salunkhe

Advanced Materials Letters, 2012

Advanced Materials Letters, 2012

Molybdenum bismuth telluride thin films have been prepared on clean glass substrate using Arreste... more Molybdenum bismuth telluride thin films have been prepared on clean glass substrate using Arrested Precipitation Technique (APT) which is based on self organized growth process. As deposited MoBi 2 Te 5 thin films were dried in constant temperature oven at 110 o C and further characterized for their optical, structural, morphological, compositional and electrical analysis. Optical absorption spectra recorded in the wavelength range 300-800 nm showed band gap (Eg) 1.44 eV. X-ray diffraction pattern and scanning electron microscopic images showed that MoBi 2 Te 5 thin films were nanocrystalline having rhombohedral structure. The energy dispersive spectroscopic analysis of as deposited thin films showed close agreements in theoretical and experimental atomic percentages of Mo 4+ , Bi 3+ and Te 2and suggest that the chemical formula MoBi 2 Te 5 assigned to molybdenum bismuth telluride thin film material is confirm. The resistivity and thermoelectric power measurement studies showed that the films were semiconducting with n-type conduction. The fill factor and conversion efficiency (η) are determined by fabricating PEC cell using MoBi 2 Te 5 thin film electrode. In this article we report the optostructural, morphological, compositional and thermoelectric characteristics of nanocrystalline MoBi 2 Te 5 thin films to check its suitability as photoelectrode in PEC Cell.

International Journal of Materials Science and Applications, 2013

Thermoelectric study of Sb (III) doped bismuth tellurium selenide ,Bi 2-x Sb x (Te 1-x Se x) 3 th... more Thermoelectric study of Sb (III) doped bismuth tellurium selenide ,Bi 2-x Sb x (Te 1-x Se x) 3 thin films were done.They are deposited by Arrested Precipitation Technique (APT). These thin films were prepared using a complexing agent triethanolamine (TEA) and a reducing agent sodium sulphite to avoid hydroxide formation of bismuth precursor Bi (NO 3) 3 and antimony precursor (SbCl 3) in aqueous medium to favor the reaction with Te 2and Se 2chalcogen ions. The preparative conditions such as pH, concentration of precursors, temperature, rate of agitation and time were finalized at initial stages of deposition. As deposited films were annealed at constant temperature (373K) in muffle furnace and then characterized for optostructural, morphological, thermoelectric and figure of merit (ZT). The results demonstrate that the Bi 2-x Sb x (Te 1-x Se x) 3 thin films prepared by APT shows band gap in the range 1.46eV to 1.89eV. X-Ray Diffraction (XRD) pattern, Scanning Electron Microscopy (SEM) images reveals that Bi 2-x Sb x (Te 1-x Se x) 3 mixed metal chalcogenide films are of nanocrystalline nature and have rhombohedral structure and better morphology. EDAX study shows good stoichiometry. Electrical and TEP study shows Sb(III) doping in Bi 2 (Te1-xSe x) 3 mixed metal chalcogenide thin films are semiconducting having p-type conduction mechanism. The highest figure of merit obtained was 0.312 and 0.569 for D1 to D5 samples.

New J. Chem., 2015

As-deposited thin film shows a fibrous reticulate framework, SDS-assisted synthesis produces a de... more As-deposited thin film shows a fibrous reticulate framework, SDS-assisted synthesis produces a dendrite star fish like morphology, and TOPO-assisted synthesis produces nanothreads with flakes.

New Journal of Chemistry, 2012

ABSTRACT In the present report, we have synthesized MoBi2S5 thin films by the Arrested Precipitat... more ABSTRACT In the present report, we have synthesized MoBi2S5 thin films by the Arrested Precipitation Technique (APT). The deposited thin films were characterized by X-ray Diffraction (XRD), Scanning Electron Microscopy (SEM), Energy Dispersive X-ray Analysis (EDS), UV-visible spectroscopy etc. Characterization tools were employed for structure, morphology, chemical composition and optical properties. Further, the effect of tri-n-octyl phosphine oxide (TOPO) on the formation and properties of the MoBi2S5 thin films were investigated. XRD patterns confirmed that the crystallite size of the MoBi2S5 thin film is decreased by using TOPO surfactant. EDS analysis results are in good agreement with the proposed chemical composition. SEM images reveal that grain size decreases from 200 to 160 nm in the presence of TOPO surfactant. The UV-visible absorption spectra of MoBi2S5 thin films show strong absorption in the wavelength range 400–1100 nm. The optical band gap was calculated from absorption spectra and lies in the range 1.20–1.35 eV. Finally, these prepared electrodes were tested for their photoelectrochemical (PEC) performance in polyiodide electrolyte and results are promising.

Materials Research Bulletin, 2012

The Journal of Physical Chemistry C, 2008

Mesoporous TiO 2 (m-TiO 2) nanoparticles were used to prepare the porous film electrodes for the ... more Mesoporous TiO 2 (m-TiO 2) nanoparticles were used to prepare the porous film electrodes for the dye-sensitized solar cells (DSSCs). The obtained m-TiO 2 porous electrodes were characterized by X-ray diffraction (XRD), transmission electron microscopy (TEM), scanning electron microscopy (SEM), electrochemical impedance spectra (EIS), and open-circuit photovoltage decay curves (OCVD). Experimental results indicate that the effect of bulk traps and the surface states within the m-TiO 2 porous films on the recombination processes of the photoinjected electrons in DSSCs depends on the annealing temperature. Moreover, the homemade m-TiO 2 nanoparticles show much higher photoelectric conversion efficiency than the nonporous TiO 2 nanoparticles (P25). The mesostructures within the m-TiO 2 nanoparticles, which can be maintained even after annealing at 500°C, are of great benefit to the dye adsorption, and then to the improvement of the photoelectrochemical properties of DSSCs.

Advanced Materials Letters, 2012

Advanced Materials Letters, 2012

Molybdenum bismuth telluride thin films have been prepared on clean glass substrate using Arreste... more Molybdenum bismuth telluride thin films have been prepared on clean glass substrate using Arrested Precipitation Technique (APT) which is based on self organized growth process. As deposited MoBi 2 Te 5 thin films were dried in constant temperature oven at 110 o C and further characterized for their optical, structural, morphological, compositional and electrical analysis. Optical absorption spectra recorded in the wavelength range 300-800 nm showed band gap (Eg) 1.44 eV. X-ray diffraction pattern and scanning electron microscopic images showed that MoBi 2 Te 5 thin films were nanocrystalline having rhombohedral structure. The energy dispersive spectroscopic analysis of as deposited thin films showed close agreements in theoretical and experimental atomic percentages of Mo 4+ , Bi 3+ and Te 2and suggest that the chemical formula MoBi 2 Te 5 assigned to molybdenum bismuth telluride thin film material is confirm. The resistivity and thermoelectric power measurement studies showed that the films were semiconducting with n-type conduction. The fill factor and conversion efficiency (η) are determined by fabricating PEC cell using MoBi 2 Te 5 thin film electrode. In this article we report the optostructural, morphological, compositional and thermoelectric characteristics of nanocrystalline MoBi 2 Te 5 thin films to check its suitability as photoelectrode in PEC Cell.

International Journal of Materials Science and Applications, 2013

Thermoelectric study of Sb (III) doped bismuth tellurium selenide ,Bi 2-x Sb x (Te 1-x Se x) 3 th... more Thermoelectric study of Sb (III) doped bismuth tellurium selenide ,Bi 2-x Sb x (Te 1-x Se x) 3 thin films were done.They are deposited by Arrested Precipitation Technique (APT). These thin films were prepared using a complexing agent triethanolamine (TEA) and a reducing agent sodium sulphite to avoid hydroxide formation of bismuth precursor Bi (NO 3) 3 and antimony precursor (SbCl 3) in aqueous medium to favor the reaction with Te 2and Se 2chalcogen ions. The preparative conditions such as pH, concentration of precursors, temperature, rate of agitation and time were finalized at initial stages of deposition. As deposited films were annealed at constant temperature (373K) in muffle furnace and then characterized for optostructural, morphological, thermoelectric and figure of merit (ZT). The results demonstrate that the Bi 2-x Sb x (Te 1-x Se x) 3 thin films prepared by APT shows band gap in the range 1.46eV to 1.89eV. X-Ray Diffraction (XRD) pattern, Scanning Electron Microscopy (SEM) images reveals that Bi 2-x Sb x (Te 1-x Se x) 3 mixed metal chalcogenide films are of nanocrystalline nature and have rhombohedral structure and better morphology. EDAX study shows good stoichiometry. Electrical and TEP study shows Sb(III) doping in Bi 2 (Te1-xSe x) 3 mixed metal chalcogenide thin films are semiconducting having p-type conduction mechanism. The highest figure of merit obtained was 0.312 and 0.569 for D1 to D5 samples.

New J. Chem., 2015

As-deposited thin film shows a fibrous reticulate framework, SDS-assisted synthesis produces a de... more As-deposited thin film shows a fibrous reticulate framework, SDS-assisted synthesis produces a dendrite star fish like morphology, and TOPO-assisted synthesis produces nanothreads with flakes.

New Journal of Chemistry, 2012

ABSTRACT In the present report, we have synthesized MoBi2S5 thin films by the Arrested Precipitat... more ABSTRACT In the present report, we have synthesized MoBi2S5 thin films by the Arrested Precipitation Technique (APT). The deposited thin films were characterized by X-ray Diffraction (XRD), Scanning Electron Microscopy (SEM), Energy Dispersive X-ray Analysis (EDS), UV-visible spectroscopy etc. Characterization tools were employed for structure, morphology, chemical composition and optical properties. Further, the effect of tri-n-octyl phosphine oxide (TOPO) on the formation and properties of the MoBi2S5 thin films were investigated. XRD patterns confirmed that the crystallite size of the MoBi2S5 thin film is decreased by using TOPO surfactant. EDS analysis results are in good agreement with the proposed chemical composition. SEM images reveal that grain size decreases from 200 to 160 nm in the presence of TOPO surfactant. The UV-visible absorption spectra of MoBi2S5 thin films show strong absorption in the wavelength range 400–1100 nm. The optical band gap was calculated from absorption spectra and lies in the range 1.20–1.35 eV. Finally, these prepared electrodes were tested for their photoelectrochemical (PEC) performance in polyiodide electrolyte and results are promising.

Materials Research Bulletin, 2012

The Journal of Physical Chemistry C, 2008

Mesoporous TiO 2 (m-TiO 2) nanoparticles were used to prepare the porous film electrodes for the ... more Mesoporous TiO 2 (m-TiO 2) nanoparticles were used to prepare the porous film electrodes for the dye-sensitized solar cells (DSSCs). The obtained m-TiO 2 porous electrodes were characterized by X-ray diffraction (XRD), transmission electron microscopy (TEM), scanning electron microscopy (SEM), electrochemical impedance spectra (EIS), and open-circuit photovoltage decay curves (OCVD). Experimental results indicate that the effect of bulk traps and the surface states within the m-TiO 2 porous films on the recombination processes of the photoinjected electrons in DSSCs depends on the annealing temperature. Moreover, the homemade m-TiO 2 nanoparticles show much higher photoelectric conversion efficiency than the nonporous TiO 2 nanoparticles (P25). The mesostructures within the m-TiO 2 nanoparticles, which can be maintained even after annealing at 500°C, are of great benefit to the dye adsorption, and then to the improvement of the photoelectrochemical properties of DSSCs.