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Papers by Maria Prudenziati
Magnetic properties of Ni-Co thick-film magnetoresistors
Thin Solid Films, 1999
Magnetic susceptibility from 300 to 900 K, room temperature hysteresis cycles and saturation magn... more Magnetic susceptibility from 300 to 900 K, room temperature hysteresis cycles and saturation magnetization were investigated in screen printed and fired NiCo-based layers prepared at various peak temperatures. A bulk NiCo metal sheet of comparable composition was also studied. Values of the magnetic polarization J of 0.28 and 0.435 T were obtained (at 200 kA/m) for films prepared at 750 and 950°C, respectively, in contrast with J=0.98 T for the bulk alloy. In addition, the magnetoresistive responses of the layers and the sheet were plotted. These data suggest that strains, pores and lack of composition homogeneity in the films concur in affecting their magnetic properties, and are responsible for their reduced magnetoresistance anisotropy (e.g. ca. 4% for films as compared to ca. 8% for the bulk alloy at H=80 kA/m).
A 250 KHz Piezoelectric Transducer for Operation in Air: Application to Distance and Wind Velocity Measurements
1982 Ultrasonics Symposium, 1982
ABSTRACT
Reverse photolithographic technique for thick film circuits
Microelectronics Reliability, 1985
... RESULTS AND DISCUSSION Initially the experiments were conducted to de-lineate by RP technique... more ... RESULTS AND DISCUSSION Initially the experiments were conducted to de-lineate by RP technique the conductor and resistive *On study leave from Solid State Devices Division, CEERI, Pilani, Raj 333031, India. ... 2. Step profile ofthick film. 62 AWATAR SINGH et al. ...
Piezoresistive Properties of Thick‐film Resistors An Overview
Microelectronics International, 1986
ABSTRACT
Thick-film technology and sensors
Sensors and Actuators, 1983
ABSTRACT
Sensors and Actuators, 1986
Sensors form a vital part of any measurement and control system Demands for sensors generally are... more Sensors form a vital part of any measurement and control system Demands for sensors generally are mcreasmg, but part~ularly for rugged, rehable, mtegrated sensors for computer controlled systems Among the various sensor technolo@es, thick-film technology (TFT) does not really offer conceptually new or sophlstlcated solutions, but does offer several appreciable capabllltles, e g , flexlblhty m choice of matermls and design, easy mtegratlon Mnth electronic clrcults and m packagmg This paper illustrates some speclflc features of TFT for sensor manufacture and ovemews most of the types of devices used or developed at present Moreover, some new sensors, which might be conceived and developed 111 the near future, are suggested 0250-6874/86/$3
IEEE Transactions on Industrial Electronics and Control Instrumentation
This paper presents a survey of the recent developments of piezoresistive sensors. First, the phy... more This paper presents a survey of the recent developments of piezoresistive sensors. First, the physical concepts which are essential for the understanding of these devices are recalled, and the characteristics and limitations (particularly temperature limitations) of semiconductor strain gauges are discussed. A further section is devoted to strain-gauge pressure transducers (the most important application of strain gauges), and, finally, possible future developments are outlined.
Semiconductor Sensors: I—Thermoresistive Devices
IEEE Transactions on Industrial Electronics and Control Instrumentation
ABSTRACT
Piezo-resistive Effects in Thick-Film Resistors
Journal of Applied Physics
ABSTRACT
Experimental results on dynamic behavior of thermistor flowmeters
IEEE Transactions on Instrumentation and Measurement
ABSTRACT
Electrocomponent Science and Technology
The electrical characteristics of ruthenium-based thick-film resistors with different conductive ... more The electrical characteristics of ruthenium-based thick-film resistors with different conductive terminations (PtAu and Ag based compositions) and with different aspect ratios were examined. The purpose is to understand the effects of resistivity decrease and TCR variation caused by the migration of metal particles from the terminations into the resistor film.
Pt2Si and PtSi formation with high‐purity Pt thin films
Applied Physics Letters
ABSTRACT
An Ultrasonic Proximity Sensor Operating in Air
Sensors and Actuators
Electrocomponent Science and Technology
A simulative approach to the calculation of electrical transport in thick-film resistors is prese... more A simulative approach to the calculation of electrical transport in thick-film resistors is presented, in which electrons are considered to hop from and to metallic grains and localized states in the glass.
Physical review. B, Condensed matter
High Frequency Response and Conduction Mechanism in Thick-Film (Cermet) Resistors
ABSTRACT
Thermal evolution of a Y-Ba-Cu-O precursor
Ru-metal segregation in borosilicate glasses
physica status solidi (a)
Thermal evolution of ruthenium dioxide clusters in a silicate glass
As well known, the dielectric matrix of air-fireable thick film resistors (TFRs) presently used i... more As well known, the dielectric matrix of air-fireable thick film resistors (TFRs) presently used in hybrid microelectronics and passive components invariably consists in a high-lead silicate glass. However the actual trend is to restrict and possibly eliminate Pb from electronic components. Attempts to develop suiTab.RuO2-based or pyrochlore ruthenate-based Pb-Cd free TFRs has been only partially successful till now. We report here the preliminary results of a study aimed to investigate the feasibility of CaRuO3 perovskite-based lead-free TFRs. The results show that sheet resistances larger than 1 KΩ/sq. can be easily achieved in a controlled way, with hot temperature coefficients of resistance in the range of a few hundreds ppm/oC. In addition, the resistors do not exhibit negative structural features, like bleeding or devitrification, observed in previous attempts to develop reliable lead-free TFRs. Keywords: thick film resistors, hybrid microelectronics, perovskite ruthenate-based
Magnetic properties of Ni-Co thick-film magnetoresistors
Thin Solid Films, 1999
Magnetic susceptibility from 300 to 900 K, room temperature hysteresis cycles and saturation magn... more Magnetic susceptibility from 300 to 900 K, room temperature hysteresis cycles and saturation magnetization were investigated in screen printed and fired NiCo-based layers prepared at various peak temperatures. A bulk NiCo metal sheet of comparable composition was also studied. Values of the magnetic polarization J of 0.28 and 0.435 T were obtained (at 200 kA/m) for films prepared at 750 and 950°C, respectively, in contrast with J=0.98 T for the bulk alloy. In addition, the magnetoresistive responses of the layers and the sheet were plotted. These data suggest that strains, pores and lack of composition homogeneity in the films concur in affecting their magnetic properties, and are responsible for their reduced magnetoresistance anisotropy (e.g. ca. 4% for films as compared to ca. 8% for the bulk alloy at H=80 kA/m).
A 250 KHz Piezoelectric Transducer for Operation in Air: Application to Distance and Wind Velocity Measurements
1982 Ultrasonics Symposium, 1982
ABSTRACT
Reverse photolithographic technique for thick film circuits
Microelectronics Reliability, 1985
... RESULTS AND DISCUSSION Initially the experiments were conducted to de-lineate by RP technique... more ... RESULTS AND DISCUSSION Initially the experiments were conducted to de-lineate by RP technique the conductor and resistive *On study leave from Solid State Devices Division, CEERI, Pilani, Raj 333031, India. ... 2. Step profile ofthick film. 62 AWATAR SINGH et al. ...
Piezoresistive Properties of Thick‐film Resistors An Overview
Microelectronics International, 1986
ABSTRACT
Thick-film technology and sensors
Sensors and Actuators, 1983
ABSTRACT
Sensors and Actuators, 1986
Sensors form a vital part of any measurement and control system Demands for sensors generally are... more Sensors form a vital part of any measurement and control system Demands for sensors generally are mcreasmg, but part~ularly for rugged, rehable, mtegrated sensors for computer controlled systems Among the various sensor technolo@es, thick-film technology (TFT) does not really offer conceptually new or sophlstlcated solutions, but does offer several appreciable capabllltles, e g , flexlblhty m choice of matermls and design, easy mtegratlon Mnth electronic clrcults and m packagmg This paper illustrates some speclflc features of TFT for sensor manufacture and ovemews most of the types of devices used or developed at present Moreover, some new sensors, which might be conceived and developed 111 the near future, are suggested 0250-6874/86/$3
IEEE Transactions on Industrial Electronics and Control Instrumentation
This paper presents a survey of the recent developments of piezoresistive sensors. First, the phy... more This paper presents a survey of the recent developments of piezoresistive sensors. First, the physical concepts which are essential for the understanding of these devices are recalled, and the characteristics and limitations (particularly temperature limitations) of semiconductor strain gauges are discussed. A further section is devoted to strain-gauge pressure transducers (the most important application of strain gauges), and, finally, possible future developments are outlined.
Semiconductor Sensors: I—Thermoresistive Devices
IEEE Transactions on Industrial Electronics and Control Instrumentation
ABSTRACT
Piezo-resistive Effects in Thick-Film Resistors
Journal of Applied Physics
ABSTRACT
Experimental results on dynamic behavior of thermistor flowmeters
IEEE Transactions on Instrumentation and Measurement
ABSTRACT
Electrocomponent Science and Technology
The electrical characteristics of ruthenium-based thick-film resistors with different conductive ... more The electrical characteristics of ruthenium-based thick-film resistors with different conductive terminations (PtAu and Ag based compositions) and with different aspect ratios were examined. The purpose is to understand the effects of resistivity decrease and TCR variation caused by the migration of metal particles from the terminations into the resistor film.
Pt2Si and PtSi formation with high‐purity Pt thin films
Applied Physics Letters
ABSTRACT
An Ultrasonic Proximity Sensor Operating in Air
Sensors and Actuators
Electrocomponent Science and Technology
A simulative approach to the calculation of electrical transport in thick-film resistors is prese... more A simulative approach to the calculation of electrical transport in thick-film resistors is presented, in which electrons are considered to hop from and to metallic grains and localized states in the glass.
Physical review. B, Condensed matter
High Frequency Response and Conduction Mechanism in Thick-Film (Cermet) Resistors
ABSTRACT
Thermal evolution of a Y-Ba-Cu-O precursor
Ru-metal segregation in borosilicate glasses
physica status solidi (a)
Thermal evolution of ruthenium dioxide clusters in a silicate glass
As well known, the dielectric matrix of air-fireable thick film resistors (TFRs) presently used i... more As well known, the dielectric matrix of air-fireable thick film resistors (TFRs) presently used in hybrid microelectronics and passive components invariably consists in a high-lead silicate glass. However the actual trend is to restrict and possibly eliminate Pb from electronic components. Attempts to develop suiTab.RuO2-based or pyrochlore ruthenate-based Pb-Cd free TFRs has been only partially successful till now. We report here the preliminary results of a study aimed to investigate the feasibility of CaRuO3 perovskite-based lead-free TFRs. The results show that sheet resistances larger than 1 KΩ/sq. can be easily achieved in a controlled way, with hot temperature coefficients of resistance in the range of a few hundreds ppm/oC. In addition, the resistors do not exhibit negative structural features, like bleeding or devitrification, observed in previous attempts to develop reliable lead-free TFRs. Keywords: thick film resistors, hybrid microelectronics, perovskite ruthenate-based