Mario Alia - Academia.edu (original) (raw)
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Papers by Mario Alia
This dataset contains the raw data files connected with the figures included in the paper "&... more This dataset contains the raw data files connected with the figures included in the paper "<em>Large Spin-to-Charge Conversion at Room Temperature in Extended Epitaxial Sb<sub>2</sub>Te<sub>3</sub> Topological Insulator Chemically Grown on Silicon</em>" by E. Longo et al., <em>Adv. Funct. Mater.</em> 2021, 2109361
This dataset contains the raw data files connected with the figures included in the paper "&... more This dataset contains the raw data files connected with the figures included in the paper "<em>Spin-Charge Conversion in Fe/Au/Sb<sub>2</sub>Te<sub>3</sub> Heterostructures as Probed By Spin Pumping Ferromagnetic Resonance</em>" by E. Longo et al.<em>, </em><em>Adv. Mater. Interfaces</em> 2021, 2101244.
Abstract: Topological insulators (TI) are gaining attention from a technological point of view du... more Abstract: Topological insulators (TI) are gaining attention from a technological point of view due to their foreseen highly efficient capability to control adjacent magnetic media through spin to charge (S2C) conversion [1]. However, in order to make a decisive step toward technology transfer, it is necessary to develop fabrication methods suitable to guarantee their large-scale production.<br/>We developed a Metal Organic Chemical Vapour Deposition technique (MOCVD) process to grow epitaxial-quality antimony telluride (Sb<sub>2</sub>Te<sub>3</sub>) topological insulator (TI) on 4" Si(111) substrates [2]. When compared to granular-Sb<sub>2</sub>Te<sub>3</sub> grown on SiO<sub>2</sub> [3], the epitaxial-Sb<sub>2</sub>Te<sub>3</sub> on top of Si(111), shows improved magnetoconductance (MC) performances, especially upon proper annealing, as described in [2]. Figure 1 displays the MC signal em...
Advanced Materials Interfaces, 2021
Advanced Functional Materials, 2021
Spin-charge interconversion phenomena at the interface between magnetic materials and topological... more Spin-charge interconversion phenomena at the interface between magnetic materials and topological insulators (TIs) are attracting enormous interest in the research effort towards the development of fast and ultra-low power devices for the future information and communication technology. We report a large spin-to-charge conversion efficiency in Au/Co/Au/Sb2Te3/Si(111) heterostructures based on Sb2Te3 TIs grown by metal organic chemical vapor deposition on 4" Si(111) substrates. By conducting room temperature spin pumping ferromagnetic resonance, we measure an inverse Edelstein Effect length λIEE up to 0.75 nm, a record value for 3-dimensional chalcogenide-based TIs heterostructures. Our results open the path toward the use of chemical methods to produce TIs on large area Si substrates and characterized by highly performing spin-charge conversion, thus marking a milestone toward future technology-transfer.
Materials, 2020
In the 2D material framework, molybdenum disulfide (MoS2) was originally studied as an archetypic... more In the 2D material framework, molybdenum disulfide (MoS2) was originally studied as an archetypical transition metal dichalcogenide (TMD) material. The controlled synthesis of large-area and high-crystalline MoS2 remains a challenge for distinct practical applications from electronics to electrocatalysis. Among the proposed methods, chemical vapor deposition (CVD) is a promising way for synthesizing high-quality MoS2 from isolated domains to a continuous film because of its high flexibility. Herein, we report on a systematic study of the effects of growth pressure, temperature, time, and vertical height between the molybdenum trioxide (MoO3) source and the substrate during the CVD process that influence the morphology, domain size, and uniformity of thickness with controlled parameters over a large scale. The substrate was pretreated with perylene-3,4,9,10-tetracarboxylic acid tetrapotassium salt (PTAS) seed molecule that promoted the layer growth of MoS2. Further, we characterized ...
Advanced Electronic Materials, 2016
This dataset contains the raw data files connected with the figures included in the paper "&... more This dataset contains the raw data files connected with the figures included in the paper "<em>Large Spin-to-Charge Conversion at Room Temperature in Extended Epitaxial Sb<sub>2</sub>Te<sub>3</sub> Topological Insulator Chemically Grown on Silicon</em>" by E. Longo et al., <em>Adv. Funct. Mater.</em> 2021, 2109361
This dataset contains the raw data files connected with the figures included in the paper "&... more This dataset contains the raw data files connected with the figures included in the paper "<em>Spin-Charge Conversion in Fe/Au/Sb<sub>2</sub>Te<sub>3</sub> Heterostructures as Probed By Spin Pumping Ferromagnetic Resonance</em>" by E. Longo et al.<em>, </em><em>Adv. Mater. Interfaces</em> 2021, 2101244.
Abstract: Topological insulators (TI) are gaining attention from a technological point of view du... more Abstract: Topological insulators (TI) are gaining attention from a technological point of view due to their foreseen highly efficient capability to control adjacent magnetic media through spin to charge (S2C) conversion [1]. However, in order to make a decisive step toward technology transfer, it is necessary to develop fabrication methods suitable to guarantee their large-scale production.<br/>We developed a Metal Organic Chemical Vapour Deposition technique (MOCVD) process to grow epitaxial-quality antimony telluride (Sb<sub>2</sub>Te<sub>3</sub>) topological insulator (TI) on 4" Si(111) substrates [2]. When compared to granular-Sb<sub>2</sub>Te<sub>3</sub> grown on SiO<sub>2</sub> [3], the epitaxial-Sb<sub>2</sub>Te<sub>3</sub> on top of Si(111), shows improved magnetoconductance (MC) performances, especially upon proper annealing, as described in [2]. Figure 1 displays the MC signal em...
Advanced Materials Interfaces, 2021
Advanced Functional Materials, 2021
Spin-charge interconversion phenomena at the interface between magnetic materials and topological... more Spin-charge interconversion phenomena at the interface between magnetic materials and topological insulators (TIs) are attracting enormous interest in the research effort towards the development of fast and ultra-low power devices for the future information and communication technology. We report a large spin-to-charge conversion efficiency in Au/Co/Au/Sb2Te3/Si(111) heterostructures based on Sb2Te3 TIs grown by metal organic chemical vapor deposition on 4" Si(111) substrates. By conducting room temperature spin pumping ferromagnetic resonance, we measure an inverse Edelstein Effect length λIEE up to 0.75 nm, a record value for 3-dimensional chalcogenide-based TIs heterostructures. Our results open the path toward the use of chemical methods to produce TIs on large area Si substrates and characterized by highly performing spin-charge conversion, thus marking a milestone toward future technology-transfer.
Materials, 2020
In the 2D material framework, molybdenum disulfide (MoS2) was originally studied as an archetypic... more In the 2D material framework, molybdenum disulfide (MoS2) was originally studied as an archetypical transition metal dichalcogenide (TMD) material. The controlled synthesis of large-area and high-crystalline MoS2 remains a challenge for distinct practical applications from electronics to electrocatalysis. Among the proposed methods, chemical vapor deposition (CVD) is a promising way for synthesizing high-quality MoS2 from isolated domains to a continuous film because of its high flexibility. Herein, we report on a systematic study of the effects of growth pressure, temperature, time, and vertical height between the molybdenum trioxide (MoO3) source and the substrate during the CVD process that influence the morphology, domain size, and uniformity of thickness with controlled parameters over a large scale. The substrate was pretreated with perylene-3,4,9,10-tetracarboxylic acid tetrapotassium salt (PTAS) seed molecule that promoted the layer growth of MoS2. Further, we characterized ...
Advanced Electronic Materials, 2016