Massoud Javidi - Academia.edu (original) (raw)

Papers by Massoud Javidi

Research paper thumbnail of Czochralski silicon crystal growth: Modeling and simulation study

Research paper thumbnail of Methods for Preparing a Melt of Silicon Powder for Silicon Crystal Growth

Research paper thumbnail of Method and device for feeding arsenic dopant into a silicon crystal growing apparatus

Research paper thumbnail of Method for Feeding Arsenic Dopant Into a Silicon Crystal Growing Apparatus

Research paper thumbnail of Method and system for controlling growth of a silicon crystal

Research paper thumbnail of Controlled crown growth process for czochralski single crystal silicon

Research paper thumbnail of Digitally Controlled LEC GaAs Growth: Experimental Results

Research paper thumbnail of Interactive-digitally controlled LEC crystal growth

Research paper thumbnail of Characterization of GaAs crystals

Research paper thumbnail of <title>Optimization of a gel-derived gradient-index material</title>

Sol-Gel Optics II, 1992

ABSTRACT Gradient index (GRIN) materials are used extensively in optical applications such as fax... more ABSTRACT Gradient index (GRIN) materials are used extensively in optical applications such as fax machines, photocopiers, and fiber optic couplers. This paper presents a discussion of the relationship between various sol-gel processing steps and the final properties of a gel derived radial GRIN lens and include results of recent experiments with TiO2-Al2O3-SiO2 gels.

Research paper thumbnail of Development of fluidized bed reactors for silicon production

Solar Energy Materials and Solar Cells, 2010

Research paper thumbnail of Autonomous liquid encapsulated Czochralski (LEC) growth of single crystal GaAs by “intelligent” digital control

Journal of Crystal Growth, 1988

An "intelligent" digital growth control approach developed at Arizona State University (ASU) whic... more An "intelligent" digital growth control approach developed at Arizona State University (ASU) which combines deterministic and heuristic techniques allows virtually total automation of the high-pressure LEC process for GaAs growth. A number of 4 kg, 3 inch semi-insulating GaAs crystals have been grown reproducibly on an adapted Cambridge Instruments CI 358 puller without any significant operator intervention, with process yields of more than 75% single crystals. Crystals produced with the digital system were superior in diameter control, compared to conventionally grown crystals, and exhibited a better uniformity of their electrical and crystalline properties.

Research paper thumbnail of Composite Distribution Solution for Minimizing Heat Loss in a Pyrolysis Reactor

International Journal of Chemical Reactor Engineering, 2011

Research paper thumbnail of Czochralski silicon crystal growth: Modeling and simulation study

Research paper thumbnail of Czochralski silicon crystal growth: Modeling and simulation study

Research paper thumbnail of Methods for Preparing a Melt of Silicon Powder for Silicon Crystal Growth

Research paper thumbnail of Method and device for feeding arsenic dopant into a silicon crystal growing apparatus

Research paper thumbnail of Method for Feeding Arsenic Dopant Into a Silicon Crystal Growing Apparatus

Research paper thumbnail of Method and system for controlling growth of a silicon crystal

Research paper thumbnail of Controlled crown growth process for czochralski single crystal silicon

Research paper thumbnail of Digitally Controlled LEC GaAs Growth: Experimental Results

Research paper thumbnail of Interactive-digitally controlled LEC crystal growth

Research paper thumbnail of Characterization of GaAs crystals

Research paper thumbnail of <title>Optimization of a gel-derived gradient-index material</title>

Sol-Gel Optics II, 1992

ABSTRACT Gradient index (GRIN) materials are used extensively in optical applications such as fax... more ABSTRACT Gradient index (GRIN) materials are used extensively in optical applications such as fax machines, photocopiers, and fiber optic couplers. This paper presents a discussion of the relationship between various sol-gel processing steps and the final properties of a gel derived radial GRIN lens and include results of recent experiments with TiO2-Al2O3-SiO2 gels.

Research paper thumbnail of Development of fluidized bed reactors for silicon production

Solar Energy Materials and Solar Cells, 2010

Research paper thumbnail of Autonomous liquid encapsulated Czochralski (LEC) growth of single crystal GaAs by “intelligent” digital control

Journal of Crystal Growth, 1988

An "intelligent" digital growth control approach developed at Arizona State University (ASU) whic... more An "intelligent" digital growth control approach developed at Arizona State University (ASU) which combines deterministic and heuristic techniques allows virtually total automation of the high-pressure LEC process for GaAs growth. A number of 4 kg, 3 inch semi-insulating GaAs crystals have been grown reproducibly on an adapted Cambridge Instruments CI 358 puller without any significant operator intervention, with process yields of more than 75% single crystals. Crystals produced with the digital system were superior in diameter control, compared to conventionally grown crystals, and exhibited a better uniformity of their electrical and crystalline properties.

Research paper thumbnail of Composite Distribution Solution for Minimizing Heat Loss in a Pyrolysis Reactor

International Journal of Chemical Reactor Engineering, 2011

Research paper thumbnail of Czochralski silicon crystal growth: Modeling and simulation study