Matthew Puckett - Academia.edu (original) (raw)

Papers by Matthew Puckett

arXiv (Cornell University), Aug 22, 2018

We present experimental results on second-harmonic generation in non-stoichiometric, silicon-rich... more We present experimental results on second-harmonic generation in non-stoichiometric, silicon-rich nitride (SRN) films. The as-deposited film presents a second-order nonlinear coefficient, or χ (2) , as high as 8pm/V. This value can be widely tuned using the electric field induced second harmonic effect (EFISH), and a maximum value of 22.7pm/V was achieved with this technique. We further illustrate that the second-order nonlinear coefficient exhibited by these films can be highly dispersive in nature, and requires further study and analysis to evaluate their viability for inwaveguide applications at telecommunication wavelengths.

We discuss effects of dielectric claddings on nanoscale engineered optical nonlinearities for Si ... more We discuss effects of dielectric claddings on nanoscale engineered optical nonlinearities for Si nanophotonics applications to modulation and wave mixing of optical fields.

We report on the characterization of nanoridge array waveguides consisting of silicon, Al2O3, and... more We report on the characterization of nanoridge array waveguides consisting of silicon, Al2O3, and SiO2. We determine the loss of these devices using ring resonators and measure enhanced third-harmonic generation from similarly patterned silicon surfaces.

Ultra-high Q optical resonators are an essential component for a wide range of applications such ... more Ultra-high Q optical resonators are an essential component for a wide range of applications such as ultra-narrow linewidth lasers, optical gyroscopes, optical atomic clocks and quantum communications and computation [1-3]. Efforts have been made towards miniaturizing bulk-optical resonators with Qs of tens of Billions [4] such as the whispering gallery mode resonator with 63 Billion Q [5] and the microrod resonator with 1 Billion Q [6]. Progress has been made with on-chip etched silica disk resonators reaching 1.1 Billion Q, however, these designs are not compatible with wafer-scale photonic waveguide fabrication [7]. Recently, we reported a 422 Million intrinsic Q Si3N4 integrated all-waveguide resonator with a 453 kHz intrinsic linewidth and 0.060 dB/m loss [8]. Moving these all-waveguide designs towards 1 Billion Q for integrated all-waveguide resonators is a key milestone towards fully integrated ultra-narrow linewidth, ultra-stable lasers. In this paper we report a record high 720 Million intrinsic Q integrated all-waveguide resonator with an intrinsic linewidth of 258 kHz and loaded linewidth of 386 kHz with corresponding record low loss of 0.034 dB/m. These results are the highest Q reported to date for all-waveguide integrated resonators and lowest waveguide losses for a non-bonded structure, a factor of 70% increase in Q, and a factor of ~2X reduction in intrinsic linewidth and loss.

We demonstrate a way to engineer a second-order nonlinearity (χ⁽²⁾) in sil... more We demonstrate a way to engineer a second-order nonlinearity (χ⁽²⁾) in silicon-dielectric multilayers via the electric-field induced second-harmonic effect. The value of χ⁽²⁾ measured using the Maker fringe method is 1.2 pm/V.

Observation of second-harmonic generation in silicon nitride waveguides through bulk nonlineariti... more Observation of second-harmonic generation in silicon nitride waveguides through bulk nonlinearities," Optics Express (In submission).

CLEO 2023

We study novel soliton glass frequency combs to a modified Lugiato-Lefever Equation (LLE) that in... more We study novel soliton glass frequency combs to a modified Lugiato-Lefever Equation (LLE) that include cross-phase modulation within a Fabry-Perot resonator. Soliton glasses are characterized by stable, spatially locked, phase-locked, and randomly spaced soliton pulses.

CLEO 2023

We present measurements of the spectral phase in a waveguide Bragg reflector using a Michelson in... more We present measurements of the spectral phase in a waveguide Bragg reflector using a Michelson interferometer. When compared with theory, these measurements support the dispersion engineering in novel linear Bragg grating frequency comb microresonators.

Conference on Lasers and Electro-Optics, 2017

We develop Si-rich SiN<inf>x</inf> thin films exhibiting large effective second-order... more We develop Si-rich SiN<inf>x</inf> thin films exhibiting large effective second-order nonlinearity (χ⁽²⁾) as high as 22.7 pm/V by combining the nonlinear contribution from pre-existing χ⁽²⁾ in SiN<inf>x</inf> and from the electric-field induced second-harmonic (EFISH) effect.

arXiv: Optics, 2015

We fabricate silicon waveguides in silicon-on-insulator (SOI) wafers clad with either silicon dio... more We fabricate silicon waveguides in silicon-on-insulator (SOI) wafers clad with either silicon dioxide, silicon nitride, or aluminum oxide, and by measuring the electro-optic behavior of ring resonators, we characterize the cladding-dependent and capacitively-induced free-carrier effects in each of these waveguides. By comparing our measured data with simulation results, we confirm that the observed voltage dependencies of the transmission spectra are due to changes in the concentrations of holes and electrons within the semiconductor waveguide, and we show for the first time how strongly these effects depend on the cladding material which comes into contact with the silicon waveguide. Additionally, the waveguide loss is found to have a particularly high sensitivity to the applied voltage, and may therefore find use in a wide range of applications which require low- or high-loss propagation. Collectively, these phenomena may be incorporated into more complex waveguide designs in the ...

2020 IEEE Research and Applications of Photonics in Defense Conference (RAPID), 2020

Honeywell is using Brillouin lasing in chip-scale SiO2/Si$_{3}N_{4}$ waveguide resonators to crea... more Honeywell is using Brillouin lasing in chip-scale SiO2/Si$_{3}N_{4}$ waveguide resonators to create a robust ring laser gyroscope. Limitations on gyro performance are cascading of Brillouin lasing to higher SBS orders and scattering loss of the Brillouin light in the resonator. We describe advances addressing each of these issues.

APL Photonics, 2019

We present experimental results on second-harmonic generation in non-stoichiometric, silicon-rich... more We present experimental results on second-harmonic generation in non-stoichiometric, silicon-rich nitride films. The asdeposited film presents a second-order nonlinear coefficient, or χ (2) , as high as 8 pm/V. This value can be widely tuned using the electric field induced second harmonic effect, and a maximum value of 22.7 pm/V was achieved with this technique. We further illustrate that the second-order nonlinear coefficient exhibited by these films can be highly dispersive in nature and require further study and analysis to evaluate their viability for in-waveguide applications at telecommunication wavelengths.

Optics express, Jan 25, 2016

We present experimental results on the observation of a bulk second-order nonlinear susceptibilit... more We present experimental results on the observation of a bulk second-order nonlinear susceptibility, derived from both free-space and integrated measurements, in silicon nitride. Phase-matching is achieved through dispersion engineering of the waveguide cross-section, independently revealing multiple components of the nonlinear susceptibility, namely χ⁽²⁾ _yyy = 0.14 ± 0.08 pm/V and χ⁽²⁾ _xxy = 0.30 ± 0.18 pm/V. Additionally, we show how the second-harmonic signal may be tuned through the application of bias voltages across silicon nitride. The material properties measured here are anticipated to allow for the realization of new nanophotonic devices in CMOS-compatible silicon nitride waveguides, adding to their viability for telecommunication, data communication, and optical signal processing applications.

Applied Physics Letters, 2015

We theoretically characterize the free-carrier plasma dispersion effect in fully etched silicon w... more We theoretically characterize the free-carrier plasma dispersion effect in fully etched silicon waveguides, with various dielectric material claddings, due to fixed interface charges and trap states at the silicon-dielectric interfaces. The values used for these charges are obtained from the measured capacitance-voltage characteristics of SiO2, SiNx, and Al2O3 thin films deposited on silicon substrates. The effect of the charges on the properties of silicon waveguides is then calculated using the semiconductor physics tool Silvaco in combination with the finite-difference time-domain method solver Lumerical. Our results show that, in addition to being a critical factor in the analysis of such active devices as capacitively driven silicon modulators, this effect should also be taken into account when considering the propagation losses of passive silicon waveguides.

SPIE Proceedings, 2014

ABSTRACT We will describe recent work in the area of integrated nanophotonics that have applicati... more ABSTRACT We will describe recent work in the area of integrated nanophotonics that have applications to on chip communication. In this context we will present passive filters and resonators produced through periodic waveguide modulation. We will also demonstrate nonlinear optical pulse compression in a monolithic device that integrates self phase modulation and dispersion compensation. We also discuss wavemixing applications.

The demand for high-performance chip-scale lasers has driven rapid growth in integrated photonics... more The demand for high-performance chip-scale lasers has driven rapid growth in integrated photonics. The creation of such low-noise laser sources is critical for emerging on-chip applications, ranging from coherent optical communications, photonic microwave oscillators and signal processors to spectroscopy, remote sensing and optical rotational sensors. While Brillouin lasers are a promising solution to these challenges, new strategies are needed to create robust, compact, low power and lowcost Brillouin laser technologies through wafer-scale integration. To date, chip-scale Brillouin lasers have remained elusive due to the difficulties in realization of these lasers on a commercial integration platform. In this paper, we demonstrate, for the first time, monolithically integrated Brillouin lasers using a wafer-scale process based on an ultra-low loss Si3N4/SiO2 waveguide platform. Cascading of stimulated Brillouin lasing to 10 Stokes orders was observed in an integrated bus-coupled re...

High Q optical resonators that are a key component for ultra-narrow linewidth lasers, frequency s... more High Q optical resonators that are a key component for ultra-narrow linewidth lasers, frequency stabilization, precision spectroscopy and quantum applications. Integration of these resonators in a photonic waveguide wafer-scale platform is key to reducing their cost, size and power as well as sensitivity to environmental disturbances. However, to date, the intrinsic Q of integrated all-waveguide resonators has been relegated to below 150 Million for a non-etched waveguide resonator and 230 Million for a waveguide-coupled etched silica microresonator. Here, we report an all-waveguide Si3N4 resonator with an intrinsic Q of 422 Million and a 3.4 Billion absorption loss limited Q. The resonator linewidth measures at 453 kHz intrinsic linewidth, 906 kHz loaded linewidth with finesse of 3005. The corresponding linear loss of 0.060 dB/m is the lowest reported to date for an all-waveguide design with deposited upper cladding oxide. These are the highest intrinsic and absorption loss limited...

2019 Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference (CLEO/Europe-EQEC)

Low-loss optical resonators fabricated in chip-scale waveguides are of great interest to a wide r... more Low-loss optical resonators fabricated in chip-scale waveguides are of great interest to a wide range of technologies [1]-[4]. Notably, low-loss silicon nitride ring resonators have been demonstrated to function as optical gyroscopes [5]. Virtually all applications of optical resonators benefit from the minimization of propagation loss. Previous analyses of ultralow loss silicon nitride ring resonators have attributed a majority of propagation loss to absorption and sidewall scattering, but here we present new resonators which yield a record-low loss of 0.123 dB/m at an optical wavelength of 1563 nm, and near-infrared images of these resonators indicate that loss is heavily impacted by the presence of randomly positioned scattering elements incorporated into the structure during fabrication.

arXiv (Cornell University), Aug 22, 2018

We present experimental results on second-harmonic generation in non-stoichiometric, silicon-rich... more We present experimental results on second-harmonic generation in non-stoichiometric, silicon-rich nitride (SRN) films. The as-deposited film presents a second-order nonlinear coefficient, or χ (2) , as high as 8pm/V. This value can be widely tuned using the electric field induced second harmonic effect (EFISH), and a maximum value of 22.7pm/V was achieved with this technique. We further illustrate that the second-order nonlinear coefficient exhibited by these films can be highly dispersive in nature, and requires further study and analysis to evaluate their viability for inwaveguide applications at telecommunication wavelengths.

We discuss effects of dielectric claddings on nanoscale engineered optical nonlinearities for Si ... more We discuss effects of dielectric claddings on nanoscale engineered optical nonlinearities for Si nanophotonics applications to modulation and wave mixing of optical fields.

We report on the characterization of nanoridge array waveguides consisting of silicon, Al2O3, and... more We report on the characterization of nanoridge array waveguides consisting of silicon, Al2O3, and SiO2. We determine the loss of these devices using ring resonators and measure enhanced third-harmonic generation from similarly patterned silicon surfaces.

Ultra-high Q optical resonators are an essential component for a wide range of applications such ... more Ultra-high Q optical resonators are an essential component for a wide range of applications such as ultra-narrow linewidth lasers, optical gyroscopes, optical atomic clocks and quantum communications and computation [1-3]. Efforts have been made towards miniaturizing bulk-optical resonators with Qs of tens of Billions [4] such as the whispering gallery mode resonator with 63 Billion Q [5] and the microrod resonator with 1 Billion Q [6]. Progress has been made with on-chip etched silica disk resonators reaching 1.1 Billion Q, however, these designs are not compatible with wafer-scale photonic waveguide fabrication [7]. Recently, we reported a 422 Million intrinsic Q Si3N4 integrated all-waveguide resonator with a 453 kHz intrinsic linewidth and 0.060 dB/m loss [8]. Moving these all-waveguide designs towards 1 Billion Q for integrated all-waveguide resonators is a key milestone towards fully integrated ultra-narrow linewidth, ultra-stable lasers. In this paper we report a record high 720 Million intrinsic Q integrated all-waveguide resonator with an intrinsic linewidth of 258 kHz and loaded linewidth of 386 kHz with corresponding record low loss of 0.034 dB/m. These results are the highest Q reported to date for all-waveguide integrated resonators and lowest waveguide losses for a non-bonded structure, a factor of 70% increase in Q, and a factor of ~2X reduction in intrinsic linewidth and loss.

We demonstrate a way to engineer a second-order nonlinearity (χ⁽²⁾) in sil... more We demonstrate a way to engineer a second-order nonlinearity (χ⁽²⁾) in silicon-dielectric multilayers via the electric-field induced second-harmonic effect. The value of χ⁽²⁾ measured using the Maker fringe method is 1.2 pm/V.

Observation of second-harmonic generation in silicon nitride waveguides through bulk nonlineariti... more Observation of second-harmonic generation in silicon nitride waveguides through bulk nonlinearities," Optics Express (In submission).

CLEO 2023

We study novel soliton glass frequency combs to a modified Lugiato-Lefever Equation (LLE) that in... more We study novel soliton glass frequency combs to a modified Lugiato-Lefever Equation (LLE) that include cross-phase modulation within a Fabry-Perot resonator. Soliton glasses are characterized by stable, spatially locked, phase-locked, and randomly spaced soliton pulses.

CLEO 2023

We present measurements of the spectral phase in a waveguide Bragg reflector using a Michelson in... more We present measurements of the spectral phase in a waveguide Bragg reflector using a Michelson interferometer. When compared with theory, these measurements support the dispersion engineering in novel linear Bragg grating frequency comb microresonators.

Conference on Lasers and Electro-Optics, 2017

We develop Si-rich SiN<inf>x</inf> thin films exhibiting large effective second-order... more We develop Si-rich SiN<inf>x</inf> thin films exhibiting large effective second-order nonlinearity (χ⁽²⁾) as high as 22.7 pm/V by combining the nonlinear contribution from pre-existing χ⁽²⁾ in SiN<inf>x</inf> and from the electric-field induced second-harmonic (EFISH) effect.

arXiv: Optics, 2015

We fabricate silicon waveguides in silicon-on-insulator (SOI) wafers clad with either silicon dio... more We fabricate silicon waveguides in silicon-on-insulator (SOI) wafers clad with either silicon dioxide, silicon nitride, or aluminum oxide, and by measuring the electro-optic behavior of ring resonators, we characterize the cladding-dependent and capacitively-induced free-carrier effects in each of these waveguides. By comparing our measured data with simulation results, we confirm that the observed voltage dependencies of the transmission spectra are due to changes in the concentrations of holes and electrons within the semiconductor waveguide, and we show for the first time how strongly these effects depend on the cladding material which comes into contact with the silicon waveguide. Additionally, the waveguide loss is found to have a particularly high sensitivity to the applied voltage, and may therefore find use in a wide range of applications which require low- or high-loss propagation. Collectively, these phenomena may be incorporated into more complex waveguide designs in the ...

2020 IEEE Research and Applications of Photonics in Defense Conference (RAPID), 2020

Honeywell is using Brillouin lasing in chip-scale SiO2/Si$_{3}N_{4}$ waveguide resonators to crea... more Honeywell is using Brillouin lasing in chip-scale SiO2/Si$_{3}N_{4}$ waveguide resonators to create a robust ring laser gyroscope. Limitations on gyro performance are cascading of Brillouin lasing to higher SBS orders and scattering loss of the Brillouin light in the resonator. We describe advances addressing each of these issues.

APL Photonics, 2019

We present experimental results on second-harmonic generation in non-stoichiometric, silicon-rich... more We present experimental results on second-harmonic generation in non-stoichiometric, silicon-rich nitride films. The asdeposited film presents a second-order nonlinear coefficient, or χ (2) , as high as 8 pm/V. This value can be widely tuned using the electric field induced second harmonic effect, and a maximum value of 22.7 pm/V was achieved with this technique. We further illustrate that the second-order nonlinear coefficient exhibited by these films can be highly dispersive in nature and require further study and analysis to evaluate their viability for in-waveguide applications at telecommunication wavelengths.

Optics express, Jan 25, 2016

We present experimental results on the observation of a bulk second-order nonlinear susceptibilit... more We present experimental results on the observation of a bulk second-order nonlinear susceptibility, derived from both free-space and integrated measurements, in silicon nitride. Phase-matching is achieved through dispersion engineering of the waveguide cross-section, independently revealing multiple components of the nonlinear susceptibility, namely χ⁽²⁾ _yyy = 0.14 ± 0.08 pm/V and χ⁽²⁾ _xxy = 0.30 ± 0.18 pm/V. Additionally, we show how the second-harmonic signal may be tuned through the application of bias voltages across silicon nitride. The material properties measured here are anticipated to allow for the realization of new nanophotonic devices in CMOS-compatible silicon nitride waveguides, adding to their viability for telecommunication, data communication, and optical signal processing applications.

Applied Physics Letters, 2015

We theoretically characterize the free-carrier plasma dispersion effect in fully etched silicon w... more We theoretically characterize the free-carrier plasma dispersion effect in fully etched silicon waveguides, with various dielectric material claddings, due to fixed interface charges and trap states at the silicon-dielectric interfaces. The values used for these charges are obtained from the measured capacitance-voltage characteristics of SiO2, SiNx, and Al2O3 thin films deposited on silicon substrates. The effect of the charges on the properties of silicon waveguides is then calculated using the semiconductor physics tool Silvaco in combination with the finite-difference time-domain method solver Lumerical. Our results show that, in addition to being a critical factor in the analysis of such active devices as capacitively driven silicon modulators, this effect should also be taken into account when considering the propagation losses of passive silicon waveguides.

SPIE Proceedings, 2014

ABSTRACT We will describe recent work in the area of integrated nanophotonics that have applicati... more ABSTRACT We will describe recent work in the area of integrated nanophotonics that have applications to on chip communication. In this context we will present passive filters and resonators produced through periodic waveguide modulation. We will also demonstrate nonlinear optical pulse compression in a monolithic device that integrates self phase modulation and dispersion compensation. We also discuss wavemixing applications.

The demand for high-performance chip-scale lasers has driven rapid growth in integrated photonics... more The demand for high-performance chip-scale lasers has driven rapid growth in integrated photonics. The creation of such low-noise laser sources is critical for emerging on-chip applications, ranging from coherent optical communications, photonic microwave oscillators and signal processors to spectroscopy, remote sensing and optical rotational sensors. While Brillouin lasers are a promising solution to these challenges, new strategies are needed to create robust, compact, low power and lowcost Brillouin laser technologies through wafer-scale integration. To date, chip-scale Brillouin lasers have remained elusive due to the difficulties in realization of these lasers on a commercial integration platform. In this paper, we demonstrate, for the first time, monolithically integrated Brillouin lasers using a wafer-scale process based on an ultra-low loss Si3N4/SiO2 waveguide platform. Cascading of stimulated Brillouin lasing to 10 Stokes orders was observed in an integrated bus-coupled re...

High Q optical resonators that are a key component for ultra-narrow linewidth lasers, frequency s... more High Q optical resonators that are a key component for ultra-narrow linewidth lasers, frequency stabilization, precision spectroscopy and quantum applications. Integration of these resonators in a photonic waveguide wafer-scale platform is key to reducing their cost, size and power as well as sensitivity to environmental disturbances. However, to date, the intrinsic Q of integrated all-waveguide resonators has been relegated to below 150 Million for a non-etched waveguide resonator and 230 Million for a waveguide-coupled etched silica microresonator. Here, we report an all-waveguide Si3N4 resonator with an intrinsic Q of 422 Million and a 3.4 Billion absorption loss limited Q. The resonator linewidth measures at 453 kHz intrinsic linewidth, 906 kHz loaded linewidth with finesse of 3005. The corresponding linear loss of 0.060 dB/m is the lowest reported to date for an all-waveguide design with deposited upper cladding oxide. These are the highest intrinsic and absorption loss limited...

2019 Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference (CLEO/Europe-EQEC)

Low-loss optical resonators fabricated in chip-scale waveguides are of great interest to a wide r... more Low-loss optical resonators fabricated in chip-scale waveguides are of great interest to a wide range of technologies [1]-[4]. Notably, low-loss silicon nitride ring resonators have been demonstrated to function as optical gyroscopes [5]. Virtually all applications of optical resonators benefit from the minimization of propagation loss. Previous analyses of ultralow loss silicon nitride ring resonators have attributed a majority of propagation loss to absorption and sidewall scattering, but here we present new resonators which yield a record-low loss of 0.123 dB/m at an optical wavelength of 1563 nm, and near-infrared images of these resonators indicate that loss is heavily impacted by the presence of randomly positioned scattering elements incorporated into the structure during fabrication.